Search Results - (Author, Cooperation:T. N. Nguyen)
-
1Latest Papers from Table of Contents or Articles in PressLuigi Aurelio, Jo-Anne Baltos, Leigh Ford, Anh T. N. Nguyen, Manuela Jörg, Shane M. Devine, Celine Valant, Paul J. White, Arthur Christopoulos, Lauren T. May and Peter J. Scammells
American Chemical Society (ACS)
Published 2018Staff ViewPublication Date: 2018-02-24Publisher: American Chemical Society (ACS)Topics: Chemistry and PharmacologyPublished by: -
2Latest Papers from Table of Contents or Articles in PressS. W. Oh ; J. A. Harris ; L. Ng ; B. Winslow ; N. Cain ; S. Mihalas ; Q. Wang ; C. Lau ; L. Kuan ; A. M. Henry ; M. T. Mortrud ; B. Ouellette ; T. N. Nguyen ; S. A. Sorensen ; C. R. Slaughterbeck ; W. Wakeman ; Y. Li ; D. Feng ; A. Ho ; E. Nicholas ; K. E. Hirokawa ; P. Bohn ; K. M. Joines ; H. Peng ; M. J. Hawrylycz ; J. W. Phillips ; J. G. Hohmann ; P. Wohnoutka ; C. R. Gerfen ; C. Koch ; A. Bernard ; C. Dang ; A. R. Jones ; H. Zeng
Nature Publishing Group (NPG)
Published 2014Staff ViewPublication Date: 2014-04-04Publisher: Nature Publishing Group (NPG)Print ISSN: 0028-0836Electronic ISSN: 1476-4687Topics: BiologyChemistry and PharmacologyMedicineNatural Sciences in GeneralPhysicsKeywords: Animals ; Atlases as Topic ; Axons/physiology ; Brain/*anatomy & histology/*cytology ; Cerebral Cortex/cytology ; *Connectome ; Corpus Striatum/cytology ; Male ; Mice ; Mice, Inbred C57BL ; Models, Neurological ; Neuroanatomical Tract-Tracing Techniques ; Thalamus/cytologyPublished by: -
3Latest Papers from Table of Contents or Articles in PressDagmar E. Ehrnhoefer, Dale D. O. Martin, Mandi E. Schmidt, Xiaofan Qiu, Safia Ladha, Nicholas S. Caron, Niels H. Skotte, Yen T. N. Nguyen, Kuljeet Vaid, Amber L. Southwell, Sabine Engemann, Sonia Franciosi and Michael R. Hayden
BioMed Central
Published 2018Staff ViewPublication Date: 2018-03-09Publisher: BioMed CentralElectronic ISSN: 2051-5960Topics: MedicinePublished by: -
4Latest Papers from Table of Contents or Articles in PressMinh T. N. Nguyen, Gerta Shema, René P. Zahedi, Steven H. L. Verhelst
American Chemical Society (ACS)
Published 2018Staff ViewPublication Date: 2018-04-22Publisher: American Chemical Society (ACS)Print ISSN: 1535-3893Electronic ISSN: 1535-3907Topics: Chemistry and PharmacologyPublished by: -
5Latest Papers from Table of Contents or Articles in PressS. M. Mohseni ; S. R. Sani ; J. Persson ; T. N. Nguyen ; S. Chung ; Y. Pogoryelov ; P. K. Muduli ; E. Iacocca ; A. Eklund ; R. K. Dumas ; S. Bonetti ; A. Deac ; M. A. Hoefer ; J. Akerman
American Association for the Advancement of Science (AAAS)
Published 2013Staff ViewPublication Date: 2013-03-16Publisher: American Association for the Advancement of Science (AAAS)Print ISSN: 0036-8075Electronic ISSN: 1095-9203Topics: BiologyChemistry and PharmacologyComputer ScienceMedicineNatural Sciences in GeneralPhysicsPublished by: -
6Latest Papers from Table of Contents or Articles in PressB. P. Kleinstiver ; M. S. Prew ; S. Q. Tsai ; V. V. Topkar ; N. T. Nguyen ; Z. Zheng ; A. P. Gonzales ; Z. Li ; R. T. Peterson ; J. R. Yeh ; M. J. Aryee ; J. K. Joung
Nature Publishing Group (NPG)
Published 2015Staff ViewPublication Date: 2015-06-23Publisher: Nature Publishing Group (NPG)Print ISSN: 0028-0836Electronic ISSN: 1476-4687Topics: BiologyChemistry and PharmacologyMedicineNatural Sciences in GeneralPhysicsKeywords: Amino Acid Substitution/genetics ; Animals ; CRISPR-Associated Proteins/*genetics/*metabolism ; CRISPR-Cas Systems ; Cell Line ; Clustered Regularly Interspaced Short Palindromic Repeats/*genetics ; Directed Molecular Evolution ; Genome/genetics ; Humans ; Mutation/genetics ; *Nucleotide Motifs ; Protein Engineering/*methods ; Staphylococcus aureus/enzymology ; Streptococcus pyogenes/*enzymology ; Streptococcus thermophilus/enzymology ; Substrate Specificity/genetics ; Zebrafish/embryology/geneticsPublished by: -
7Latest Papers from Table of Contents or Articles in PressB. P. Kleinstiver ; V. Pattanayak ; M. S. Prew ; S. Q. Tsai ; N. T. Nguyen ; Z. Zheng ; J. K. Joung
Nature Publishing Group (NPG)
Published 2016Staff ViewPublication Date: 2016-01-07Publisher: Nature Publishing Group (NPG)Print ISSN: 0028-0836Electronic ISSN: 1476-4687Topics: BiologyChemistry and PharmacologyMedicineNatural Sciences in GeneralPhysicsKeywords: Base Sequence ; CRISPR-Associated Proteins/*genetics/*metabolism ; CRISPR-Cas Systems/*physiology ; Clustered Regularly Interspaced Short Palindromic Repeats/*genetics ; DNA/genetics/metabolism ; DNA-Binding Proteins/genetics/metabolism ; Endonucleases/genetics/*metabolism ; *Genetic Engineering ; Genome, Human/*genetics ; Humans ; Mutation ; Protein Binding ; RNA/genetics ; Reproducibility of Results ; Sequence Analysis, DNA ; Streptococcus pyogenes/enzymology/genetics ; Substrate SpecificityPublished by: -
8Articles: DFG German National LicensesJoshi, R. V. ; Moy, D. ; Brodsky, S. ; Charai, A. ; Krusin-Elbaum, L. ; Restle, P. J. ; Nguyen, T. N. ; Oh, C. S.
Woodbury, NY : American Institute of Physics (AIP)
Published 1989Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: This letter describes a novel structure for very large scale integrated contact and interconnect technology that involves selective deposition of W on self-aligned TiN/TiSi2. The TiN layer serves to protect reaction between WF6 and TiSi2 and underlying Si during W deposition as well as to promote adhesion of W layer and minimize contact resistance. The selective deposition of W on TiN, very difficult with conventional hydrogen reduction process, is accomplished by employing a recently developed silane reduction process. The structure prevents silicon consumption leading to the encroachment commonly found in tungsten deposited directly on silicon in very shallow junctions. It is demonstrated that such a structure results in low contact resistance and junction leakages and is applicable to subhalf-micron devices. Tungsten with low resistivity of 8–9 μΩ cm can be achieved at room temperature with the resulting drop by a factor of 3–4 at liquid-nitrogen temperature making the structure more attractive for low-temperature application.Type of Medium: Electronic ResourceURL: -
9Articles: DFG German National LicensesWeinberg, Z. A. ; Stein, K. J. ; Nguyen, T. N. ; Sun, J. Y.
Woodbury, NY : American Institute of Physics (AIP)
Published 1990Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: It is demonstrated that the thickness limit of a thin nitride film which can withstand reoxidation is reduced to about 3.5 nm when it is deposited in situ on a thin-deposited oxide film. The deposited oxide apparently provides a better surface for nitride nucleation and initial growth. Using this finding an oxide-nitride-oxide (ONO) film as thin as 4.6 nm was fabricated and shown to have good electrical properties and low defect density. The current leakage through the film was close to the acceptable limit in dynamic-random-access-memory technology. It was also found that electron trapping is substantially higher in ONO films produced by reoxidation than in films having a top deposited oxide.Type of Medium: Electronic ResourceURL: -
10Articles: DFG German National LicensesStaff View
ISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: The relation between positive-charge accumulation at the Si-SiO2 interface and the occurrence of high-field breakdown in metal-oxide-silicon structures has been investigated. Oxides having different hole-trapping properties were prepared with the addition of short rapid thermal anneals in O2. Experiments testing hole trapping, high-field stressing, the initial current transients at constant gate voltage, and breakdown statistics were performed on these oxides to examine the correlation between positive charge and breakdown. The conclusion is that positive-charge generation is only one of the processes occurring during high-field stress but is not the main cause for breakdown. Large current increases were observed for oxides that have large hole-trapping efficiencies, but the current increase is followed by fast current decay. The mechanism causing the current decay was investigated and was found to be an intrinsic mechanism which is related to the neutralization of the positive charge. These processes always accompany the formation of positive charge and explain why the effectiveness of the positive charge in causing current runaway is inhibited.Type of Medium: Electronic ResourceURL: -
11Articles: DFG German National LicensesJasinski, J. M. ; Meyerson, B. S. ; Nguyen, T. N.
[S.l.] : American Institute of Physics (AIP)
Published 1987Staff ViewISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: Silicon nitride films have been prepared by excimer laser photolysis of ammonia/silane or ammonia/disilane mixtures at temperatures in the range 225–625 °C in a hot-walled low-pressure reactor. The highest-quality films, deposited at 225 °C, have high breakdown-field strength, Ebd=8.8 Mv cm−1, low midgap interface-state-trap densities, Nit=1.7×1011 eV−1 cm−2, and a dielectric constant of ε=4.8.Type of Medium: Electronic ResourceURL: -
12Articles: DFG German National LicensesStaff View
ISSN: 1572-9486Source: Springer Online Journal Archives 1860-2000Topics: PhysicsNotes: Abstract In the present paper the Shiff's model is used to explain the O+-transition mechanism in nuclei. In contrary to the Shiff's study more realistic effective potentials suggested bySiemens andSprung andBanerjee are applied. They give good results.Type of Medium: Electronic ResourceURL: