Search Results - (Author, Cooperation:T. He)
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1W P Yao, B Qiao, Z Xu, H Zhang, Z H Zhao, H X Chang, C T Zhou, S P Zhu and X T He
Institute of Physics (IOP)
Published 2018Staff ViewPublication Date: 2018-06-01Publisher: Institute of Physics (IOP)Electronic ISSN: 1367-2630Topics: PhysicsPublished by: -
2Chongjie Mo, Zhenguo Fu, Wei Kang, Ping Zhang, and X. T. He
American Physical Society (APS)
Published 2018Staff ViewPublication Date: 2018-05-19Publisher: American Physical Society (APS)Print ISSN: 0031-9007Electronic ISSN: 1079-7114Topics: PhysicsKeywords: Plasma and Beam PhysicsPublished by: -
3Braz, G. T., He, L., Zhao, H., Zhang, T., Semrau, K., Rouillard, J.-M., Torres, G. A., Jiang, J.
Genetics Society of America (GSA)
Published 2018Staff ViewPublication Date: 2018-01-30Publisher: Genetics Society of America (GSA)Print ISSN: 0016-6731Topics: BiologyPublished by: -
4Staff View
Publication Date: 2018-09-05Publisher: American Physical Society (APS)Print ISSN: 1539-3755Electronic ISSN: 1550-2376Topics: PhysicsKeywords: Fluid DynamicsPublished by: -
5Staff View
Publication Date: 2018-02-03Publisher: Institute of Physics (IOP)Print ISSN: 1757-8981Electronic ISSN: 1757-899XTopics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision MechanicsPublished by: -
6Giraldo-Gallo, P., Galvis, J. A., Stegen, Z., Modic, K. A., Balakirev, F. F., Betts, J. B., Lian, X., Moir, C., Riggs, S. C., Wu, J., Bollinger, A. T., He, X., Bozovic, I., Ramshaw, B. J., McDonald, R. D., Boebinger, G. S., Shekhter, A.
American Association for the Advancement of Science (AAAS)
Published 2018Staff ViewPublication Date: 2018-08-03Publisher: American Association for the Advancement of Science (AAAS)Print ISSN: 0036-8075Electronic ISSN: 1095-9203Topics: BiologyChemistry and PharmacologyGeosciencesComputer ScienceMedicineNatural Sciences in GeneralPhysicsKeywords: PhysicsPublished by: -
7Staff View
Publication Date: 2018-06-20Publisher: American Physical Society (APS)Print ISSN: 1539-3755Electronic ISSN: 1550-2376Topics: PhysicsKeywords: Fluid DynamicsPublished by: -
8S Archibald, C E R Lehmann, C M Belcher, W J Bond, R A Bradstock, A-L Daniau, K G Dexter, E J Forrestel, M Greve, T He, S I Higgins, W A Hoffmann, B B Lamont, D J McGlinn, G R Moncrieff, C P Osborne, J G Pausas, O Price, B S Ripley, B M Rogers, D W Schwilk, M F Simon, M R Turetsky, G R Van der Werf and A E Zanne
Institute of Physics (IOP)
Published 2018Staff ViewPublication Date: 2018-03-07Publisher: Institute of Physics (IOP)Print ISSN: 1748-9318Electronic ISSN: 1748-9326Topics: BiologyEnergy, Environment Protection, Nuclear Power EngineeringPublished by: -
9F. Jiao ; J. Li ; X. Pan ; J. Xiao ; H. Li ; H. Ma ; M. Wei ; Y. Pan ; Z. Zhou ; M. Li ; S. Miao ; Y. Zhu ; D. Xiao ; T. He ; J. Yang ; F. Qi ; Q. Fu ; X. Bao
American Association for the Advancement of Science (AAAS)
Published 2016Staff ViewPublication Date: 2016-03-05Publisher: American Association for the Advancement of Science (AAAS)Print ISSN: 0036-8075Electronic ISSN: 1095-9203Topics: BiologyChemistry and PharmacologyComputer ScienceMedicineNatural Sciences in GeneralPhysicsPublished by: -
10Zhang, J., Xie, M., Xia, L., Yu, T., He, F., Zhao, C., Qiu, W., Zhao, D., Liu, Y., Gong, Y., Yao, C., Liu, L., Wang, Y.
The American Association of Immunologists (AAI)
Published 2018Staff ViewPublication Date: 2018-11-20Publisher: The American Association of Immunologists (AAI)Print ISSN: 0022-1767Electronic ISSN: 1550-6606Topics: MedicinePublished by: -
11Staff View
Publication Date: 2018-10-31Publisher: Institute of Physics (IOP)Print ISSN: 1755-1307Electronic ISSN: 1755-1315Topics: GeographyGeosciencesPhysicsPublished by: -
12K. Q. Pan, S. E. Jiang, L. Guo, S. W. Li, Z. C. Li, D. Yang, C. Y. Zheng, B. H. Zhang, and X. T. He
American Physical Society (APS)
Published 2018Staff ViewPublication Date: 2018-11-02Publisher: American Physical Society (APS)Print ISSN: 1539-3755Electronic ISSN: 1550-2376Topics: PhysicsKeywords: Plasma PhysicsPublished by: -
13Feng, E., Zheng, T., He, X., Chen, J., Tian, Y.
American Association for the Advancement of Science (AAAS)
Published 2018Staff ViewPublication Date: 2018-11-03Publisher: American Association for the Advancement of Science (AAAS)Electronic ISSN: 2375-2548Topics: Natural Sciences in GeneralPublished by: -
14X. B. Li, B. Qiao, H. X. Chang, H. He, W. P. Yao, X. F. Shen, J. Wang, Y. Xie, C. L. Zhong, C. T. Zhou, S. P. Zhu, and X. T. He
American Physical Society (APS)
Published 2018Staff ViewPublication Date: 2018-11-16Publisher: American Physical Society (APS)Print ISSN: 1050-2947Electronic ISSN: 1094-1622Topics: PhysicsKeywords: Fundamental conceptsPublished by: -
15Staff View
Publication Date: 2018-02-12Publisher: Institute of Physics (IOP)Print ISSN: 1674-1137Topics: PhysicsPublished by: -
16Zhi, D., Da, L., Liu, M., Cheng, C., Zhang, Y., Wang, X., Li, X., Tian, Z., Yang, Y., He, T., Long, X., Wei, W., Cao, G.
Genetics Society of America (GSA)
Published 2018Staff ViewPublication Date: 2018-02-09Publisher: Genetics Society of America (GSA)Electronic ISSN: 2160-1836Topics: BiologyPublished by: -
17Shen, C., Iskenderian, A., Lundberg, D., He, T., Palmieri, K., Crooker, R., Deng, Q., Traylor, M., Gu, S., Rong, H., Ehmann, D., Pescatore, B., Strack-Logue, B., Romashko, A., Baviello, G., Gill, J., Zhang, B., Meiyappan, M., Pan, C., Norton, A. W.
The American Society for Pharmacology and Experimental Therapeutics
Published 2018Staff ViewPublication Date: 2018-07-01Publisher: The American Society for Pharmacology and Experimental TherapeuticsPrint ISSN: 0022-3565Electronic ISSN: 1521-0103Topics: MedicinePublished by: -
18Yang, F. ; He, T. ; Chen, J. B. ; Pan, F.
[S.l.] : American Institute of Physics (AIP)
Published 2002Staff ViewISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: Fe/Tb (1.2 nm) multilayer films with various Fe layer thicknesses were prepared by vapor deposition. Magnetic and microstructure of the films were characterized by various experimental methods. The results show that the films evolve from ferromagnetic to superparamagnetic, and Fe in the multilayers transforms from bcc crystalline to amorphous state. The transition of magnetic property and structure is found to be related to the rough interface associated with the amorphous phase formation in Fe/Tb interface. In the [Tb(1.2 nm)/Fe(0.5 nm)]30 multilayer, Fe layers are separated into discontinuous superparamagnetic clusters by three-dimensional Tb crystal aggregates, which are responsible for paramagnetic-like spins at the interface that strengthen the spin-dependent scattering. © 2002 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
19Staff View
ISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: Optical processes at the absorption edge in Y-doped BaCeO3 films with thicknesses of 160 and 4600 nm have been studied in the temperature region between 20 and 1000 °C. For the first time, optical band-gap energies of Y-doped BaCeO3 were determined with a room temperature value of 4.1 eV and a temperature coefficient of −3.88×10−4 eV/K. It was found that the optical absorption coefficient below the band–band transition exhibits an exponential dependence on photon energy following Urbach's rule, and the Urbach tail is dependent on oxygen partial pressures, i.e., on lattice defects. The corresponding Urbach edge parameters and their temperature dependence were investigated. The data are discussed within the model of structural and thermal disorder and a characteristic phonon energy of 46 meV was obtained according to this disorder model. © 1996 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
20Staff View
ISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: The reactivity of MgB2 with powdered forms of common substrate and electronic materials is reported. Reaction temperatures between 600 and 800 °C, encompassing the range commonly employed in thin-film fabrication, were studied. The materials tested for reactivity were ZrO2, yttria stabilized zirconia, MgO, Al2O3, SiO2, SrTiO3, TiN, TaN, AlN, Si, and SiC. At 600 °C, MgB2 reacted only with SiO2 and Si. At 800 °C, however, reactions were observed for MgB2 with Al2O3, SiO2, Si, SiC, and SrTiO3. The Tc of MgB2 decreased in the reactions with SiC and Al2O3. © 2002 American Institute of Physics.Type of Medium: Electronic ResourceURL: