Search Results - (Author, Cooperation:T. Hanada)
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1Shimizu, Y., Shirasago, Y., Kondoh, M., Suzuki, T., Wakita, T., Hanada, K., Yagi, K., Fukasawa, M.
The American Society for Microbiology (ASM)
Published 2018Staff ViewPublication Date: 2018-03-29Publisher: The American Society for Microbiology (ASM)Print ISSN: 0022-538XElectronic ISSN: 1098-5514Topics: MedicinePublished by: -
2T. Hashimoto ; T. Perlot ; A. Rehman ; J. Trichereau ; H. Ishiguro ; M. Paolino ; V. Sigl ; T. Hanada ; R. Hanada ; S. Lipinski ; B. Wild ; S. M. Camargo ; D. Singer ; A. Richter ; K. Kuba ; A. Fukamizu ; S. Schreiber ; H. Clevers ; F. Verrey ; P. Rosenstiel ; J. M. Penninger
Nature Publishing Group (NPG)
Published 2012Staff ViewPublication Date: 2012-07-28Publisher: Nature Publishing Group (NPG)Print ISSN: 0028-0836Electronic ISSN: 1476-4687Topics: BiologyChemistry and PharmacologyMedicineNatural Sciences in GeneralPhysicsKeywords: Animals ; Biocatalysis ; Colitis/drug therapy/*etiology/*microbiology/pathology ; Dextran Sulfate ; Diarrhea/complications ; Dietary Proteins/metabolism/pharmacology ; Female ; Gene Deletion ; Genetic Predisposition to Disease ; Germ-Free Life ; Homeostasis ; Immunity, Innate ; Intestines/*microbiology/pathology ; Male ; Malnutrition/*complications/metabolism ; *Metagenome ; Mice ; Models, Biological ; Niacinamide/metabolism/pharmacology/therapeutic use ; Peptidyl-Dipeptidase A/deficiency/genetics/*metabolism ; Renin-Angiotensin System/physiology ; TOR Serine-Threonine Kinases/metabolism ; Trinitrobenzenesulfonic Acid ; Tryptophan/*metabolism/pharmacology/therapeutic usePublished by: -
3T. Hanada ; S. Weitzer ; B. Mair ; C. Bernreuther ; B. J. Wainger ; J. Ichida ; R. Hanada ; M. Orthofer ; S. J. Cronin ; V. Komnenovic ; A. Minis ; F. Sato ; H. Mimata ; A. Yoshimura ; I. Tamir ; J. Rainer ; R. Kofler ; A. Yaron ; K. C. Eggan ; C. J. Woolf ; M. Glatzel ; R. Herbst ; J. Martinez ; J. M. Penninger
Nature Publishing Group (NPG)
Published 2013Staff ViewPublication Date: 2013-03-12Publisher: Nature Publishing Group (NPG)Print ISSN: 0028-0836Electronic ISSN: 1476-4687Topics: BiologyChemistry and PharmacologyMedicineNatural Sciences in GeneralPhysicsKeywords: Amyotrophic Lateral Sclerosis ; Animals ; Animals, Newborn ; Axons/metabolism/pathology ; Cell Death ; Diaphragm/innervation ; Embryo Loss ; Embryo, Mammalian/metabolism/pathology ; Exons/genetics ; Female ; Fibroblasts ; Male ; Mice ; Mice, Inbred C57BL ; Mice, Knockout ; Mice, Transgenic ; Motor Neurons/*metabolism/*pathology ; Muscular Atrophy, Spinal ; Neuromuscular Diseases/metabolism/pathology ; Oxidative Stress ; RNA Processing, Post-Transcriptional ; RNA, Transfer, Tyr/genetics/*metabolism ; Respiration ; Spinal Nerves/cytology ; Transcription Factors/deficiency/*metabolism ; Tumor Suppressor Protein p53/metabolism ; Tyrosine/genetics/metabolismPublished by: -
4Relation between the Ω6 intensity parameter of Er3+ ions and the 151Eu isomer shift in oxide glassesTanabe, S. ; Ohyagi, T. ; Todoroki, S. ; Hanada, T. ; Soga, N.
[S.l.] : American Institute of Physics (AIP)
Published 1993Staff ViewISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: The Ωt intensity parameters (t=2,4,6) of Er3+ ions in several oxide glasses and the isomer shift (IS) of 151Eu Mössbauer spectra in glasses of the same composition were determined. Among these Ωt's, the Ω6 parameter was found to have a good relation with IS; Ω6 decreases with an increase of IS which reflects the 6s electron density of rare-earth ions. From the theoretical expression of Ωt, Ω6 is considered to be more affected by the overlap integrals of the 4f and 5d orbitals than Ω2 and Ω4, and to increase with an increase of these overlap integrals. These overlap integrals are supposed to decrease when the 6s electron density is larger, since the 6s electron density shields the 5d electron orbital.Type of Medium: Electronic ResourceURL: -
5Jung, H. D. ; Kumagai, N. ; Hanada, T. ; Zhu, Z. ; Yao, T.
[S.l.] : American Institute of Physics (AIP)
Published 1997Staff ViewISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: Nitridation processes on GaAs(001) surfaces exposed to N2 microwave plasma were investigated by in situ reflectance-difference spectroscopy, reflection high-energy electron diffraction, and in-line Auger electron spectroscopy. We have found that a stable GaN layer is formed only when the As background pressure is sufficiently low. Nitridation is significantly suppressed under a high background pressure of As. A possible mechanism and its implication to GaN growth on GaAs surfaces are discussed. © 1997 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
6Jung, H. D. ; Kumagai, N. ; Hanada, T. ; Zhu, Z. ; Yao, T.
[S.l.] : American Institute of Physics (AIP)
Published 1998Staff ViewISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: Nitridation processes on GaAs(001) surfaces exposed to plasma-activated N2 were investigated by employing in situ reflectance-difference spectroscopy, reflection high-energy electron diffraction, and in-line Auger electron spectroscopy. We have found that a stable GaN layer is formed only when the As background pressure in the growth chamber is sufficiently low. Nitridation is significantly suppressed under a high background pressure of As. A possible mechanism of this effect and its implication to cubic-GaN growth on GaAs surfaces are discussed. Surface roughening induced by extensive nitridation is also discussed. © 1998 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
7Koo, B. H. ; Hanada, T. ; Makino, H. ; Yao, T.
Woodbury, NY : American Institute of Physics (AIP)
Published 2001Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: We present the results of the formation of the InAs quantum dots (QDs) on the (100) In1−xAlxAs(InAlAs)/InP substrate by using relaxed InAlAs buffer layers with different compositions. Variations of surface morphology of InAs QDs as a function of InAs–InAlAs lattice mismatch have been evaluated by atomic force microscopy. When the lattice mismatch increases from 2.4% to 4.2%, the size of QDs decreases, and the density of QDs increases. Each of these dependences can be fitted to a power function of the misfit unless the Al diffusion, roughness of the buffer layer, and/or the ripening of small dots modify the size and density.© 2001 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
8Chang, J. H. ; Cho, M. W. ; Wang, H. M. ; Wenisch, H. ; Hanada, T. ; Yao, T.
Woodbury, NY : American Institute of Physics (AIP)
Published 2000Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: The structural and optical properties of high-quality homoepitaxial ZnTe films are investigated. A substrate surface treatment using diluted HF solution plays a key role in growing device-quality ZnTe layers. X-ray diffraction analysis of ZnTe epilayers based on the crystal-truncation-rod method suggests that a homoepitaxial ZnTe film grown on a HF-treated substrate can be regarded as an ideal truncated crystal without an interfacial layer, while a ZnTe layer grown on a substrate without HF treatment suggests the presence of an interfacial layer which may lead to degraded crystallinity of ZnTe overlayers. The crystal quality of the homoepitaxial ZnTe layers with HF treatments are characterized by an extremely narrow x-ray diffraction linewidth of 15.6 arcsec and dominant very sharp excitonic emission lines with dramatically reduced deep-level emission intensity in the photoluminescence (PL) spectrum. Three bound excitonic emission lines at neutral acceptors are observed in the PL from the high-quality ZnTe homoepitaxial layers in addition to the free-exciton emission line, suggesting the presence of three different kinds of residual acceptor impurities. © 2000 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
9Kawai, M. ; Mori, M. ; Hanada, T. ; Kudo, M. ; Ishizawa, N. ; Goda, T. ; Teratani, S.
Amsterdam : ElsevierStaff ViewISSN: 0921-4534Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002Topics: PhysicsType of Medium: Electronic ResourceURL: -
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ISSN: 0921-4534Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002Topics: PhysicsType of Medium: Electronic ResourceURL: -
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ISSN: 0921-4534Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002Topics: PhysicsType of Medium: Electronic ResourceURL: -
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ISSN: 0022-0248Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002Topics: Chemistry and PharmacologyGeosciencesPhysicsType of Medium: Electronic ResourceURL: -
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ISSN: 0039-6028Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002Topics: PhysicsType of Medium: Electronic ResourceURL: -
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ISSN: 0022-328XSource: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002Topics: Chemistry and PharmacologyType of Medium: Electronic ResourceURL: -
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ISSN: 0009-2614Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002Topics: Chemistry and PharmacologyPhysicsType of Medium: Electronic ResourceURL: -
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ISSN: 0167-2584Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002Topics: PhysicsType of Medium: Electronic ResourceURL: -
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ISSN: 0042-207XSource: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision MechanicsPhysicsType of Medium: Electronic ResourceURL: -
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ISSN: 0168-583XSource: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002Topics: PhysicsType of Medium: Electronic ResourceURL: -
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ISSN: 0167-2584Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002Topics: PhysicsType of Medium: Electronic ResourceURL: -
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ISSN: 0039-6028Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002Topics: PhysicsType of Medium: Electronic ResourceURL: