Search Results - (Author, Cooperation:T. C. Sum)

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  1. 1
    G. Xing ; N. Mathews ; S. Sun ; S. S. Lim ; Y. M. Lam ; M. Gratzel ; S. Mhaisalkar ; T. C. Sum
    American Association for the Advancement of Science (AAAS)
    Published 2013
    Staff View
    Publication Date:
    2013-10-19
    Publisher:
    American Association for the Advancement of Science (AAAS)
    Print ISSN:
    0036-8075
    Electronic ISSN:
    1095-9203
    Topics:
    Biology
    Chemistry and Pharmacology
    Computer Science
    Medicine
    Natural Sciences in General
    Physics
    Published by:
    http://www.aaas.org/

    Latest Papers from Table of Contents or Articles in Press
  2. 2
    Seng, H. L. ; Osipowicz, T. ; Sum, T. C.

    Woodbury, NY : American Institute of Physics (AIP)
    Published 2002
    Staff View
    ISSN:
    1077-3118
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    Relaxed, epitaxial SiGe layers with low densities of threading dislocations are grown by linearly grading the Ge composition. However, such compositionally graded SiGe layers (virtual substrates) often result in a cross hatch surface morphology which affects subsequent device processing. Here, we report on high-resolution channeling-contrast-microscopy (CCM) measurements on such virtual substrates grown by gas-source molecular-beam epitaxy and low-pressure chemical vapor deposition. A two-MeV He+ beam focused to a submicron spot is used in these CCM measurements to obtain both lateral and depth-resolved information on the cross hatch features observed and their association with a slight lattice tilt. © 2002 American Institute of Physics.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.1474597

    Articles: DFG German National Licenses