Search Results - (Author, Cooperation:T. C. Huang)
-
1Latest Papers from Table of Contents or Articles in PressA. Singh, H. Y. Huang, Y. Y. Chin, Y. F. Liao, T. C. Huang, J. Okamoto, W. B. Wu, H. J. Lin, K. D. Tsuei, R. P. Wang, F. M. F. de Groot, C. N. Kuo, H. F. Liu, C. S. Lue, C. T. Chen, D. J. Huang, and A. Chainani
American Physical Society (APS)
Published 2018Staff ViewPublication Date: 2018-12-19Publisher: American Physical Society (APS)Print ISSN: 1098-0121Electronic ISSN: 1095-3795Topics: PhysicsKeywords: Electronic structure and strongly correlated systemsPublished by: -
2Latest Papers from Table of Contents or Articles in PressM. S. Kim ; S. M. Pinto ; D. Getnet ; R. S. Nirujogi ; S. S. Manda ; R. Chaerkady ; A. K. Madugundu ; D. S. Kelkar ; R. Isserlin ; S. Jain ; J. K. Thomas ; B. Muthusamy ; P. Leal-Rojas ; P. Kumar ; N. A. Sahasrabuddhe ; L. Balakrishnan ; J. Advani ; B. George ; S. Renuse ; L. D. Selvan ; A. H. Patil ; V. Nanjappa ; A. Radhakrishnan ; S. Prasad ; T. Subbannayya ; R. Raju ; M. Kumar ; S. K. Sreenivasamurthy ; A. Marimuthu ; G. J. Sathe ; S. Chavan ; K. K. Datta ; Y. Subbannayya ; A. Sahu ; S. D. Yelamanchi ; S. Jayaram ; P. Rajagopalan ; J. Sharma ; K. R. Murthy ; N. Syed ; R. Goel ; A. A. Khan ; S. Ahmad ; G. Dey ; K. Mudgal ; A. Chatterjee ; T. C. Huang ; J. Zhong ; X. Wu ; P. G. Shaw ; D. Freed ; M. S. Zahari ; K. K. Mukherjee ; S. Shankar ; A. Mahadevan ; H. Lam ; C. J. Mitchell ; S. K. Shankar ; P. Satishchandra ; J. T. Schroeder ; R. Sirdeshmukh ; A. Maitra ; S. D. Leach ; C. G. Drake ; M. K. Halushka ; T. S. Prasad ; R. H. Hruban ; C. L. Kerr ; G. D. Bader ; C. A. Iacobuzio-Donahue ; H. Gowda ; A. Pandey
Nature Publishing Group (NPG)
Published 2014Staff ViewPublication Date: 2014-05-30Publisher: Nature Publishing Group (NPG)Print ISSN: 0028-0836Electronic ISSN: 1476-4687Topics: BiologyChemistry and PharmacologyMedicineNatural Sciences in GeneralPhysicsKeywords: Adult ; Cells, Cultured ; Databases, Protein ; Fetus/metabolism ; Fourier Analysis ; Gene Expression Profiling ; Genome, Human/genetics ; Hematopoietic Stem Cells/cytology/metabolism ; Humans ; Internet ; Mass Spectrometry ; Molecular Sequence Annotation ; Open Reading Frames/genetics ; Organ Specificity ; Protein Biosynthesis ; Protein Isoforms/analysis/genetics/metabolism ; Protein Sorting Signals ; Protein Transport ; Proteome/analysis/chemistry/genetics/*metabolism ; *Proteomics ; Pseudogenes/genetics ; RNA, Untranslated/genetics ; Reproducibility of Results ; Untranslated Regions/geneticsPublished by: -
3Latest Papers from Table of Contents or Articles in PressWang, J. W., Wu, W. H., Huang, T.-C., Wong, M., Kwak, K., Ozato, K., Hung, C.-F., Roden, R. B. S.
The American Society for Microbiology (ASM)
Published 2018Staff ViewPublication Date: 2018-07-18Publisher: The American Society for Microbiology (ASM)Print ISSN: 0022-538XElectronic ISSN: 1098-5514Topics: MedicinePublished by: -
4Articles: DFG German National LicensesHuang, T. C. ; Chung, Y. ; Dagli, N. ; Coldren, L. A.
[S.l.] : American Institute of Physics (AIP)
Published 1992Staff ViewISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: The characteristics of geometric dimensions, such as the modulation length L, the central guide width W, and the gap G between the central guide and antiguide regions for the performance of the guide/antiguide intensity modulator have been examined. Both theoretical predictions and experimental measurements are reported here.Type of Medium: Electronic ResourceURL: -
5Articles: DFG German National LicensesLee, W. Y. ; Vazquez, J. ; Huang, T. C. ; Savoy, R.
[S.l.] : American Institute of Physics (AIP)
Published 1991Staff ViewISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: The preparation and properties of 120-K Tl-based high-temperature superconducting thin films on LaAlO3 substrates are reported. These films are obtained by post-annealing 2Tl: 2Ca: 2Ba: 3Cu: 10O precursor films at (approximately-equal-to)890 °C in a sealed quartz tube filled with (approximately-equal-to) 1-atm O2. Results of ac susceptibility measurements show a sharp drop in the real part of the susceptibility (χ') and a sharp maximum peak in the imaginary part of the susceptibility (χ‘) at a temperature close to the observed zero resistance Tc of (approximately-equal-to) 120 K. The broadening of the transition width in χ' and the decrease in the temperature where χ‘ maximum appears are found to occur at a slower rate with increasing ac field for these films than for the films deposited on Y-ZrO2 and MgO and having a similar zero resistance Tc. This weaker field dependence of χ' and χ‘ is shown to lead to a higher critical current density for the films deposited on LaAlO3 substrates. The higher critical current density is attributed to a stronger coupling between the grains arising from the absence of the formation of well-defined grain boundaries during film growth.Type of Medium: Electronic ResourceURL: -
6Articles: DFG German National LicensesHuang, T. C. ; Chung, Y. ; Dagli, N. ; Coldren, L. A.
Woodbury, NY : American Institute of Physics (AIP)
Published 1991Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: We report an electric field induced-guide/antiguide optical intensity modulator which has a very wide optical bandwidth from 1 to 1.55 μm (ON/OFF ratio (approximately-greater-than) 13 dB from 1 to 1.55 μm for both TE and TM modes), which is the largest ever reported before for an intensity modulator. A TE mode ON/OFF ratio larger than 21 dB at 1.15 μm, and a propagation loss ∼1 dB at 1.3 μm has been measured. The electro-optic effects, along with carrier effects have been exploited to increase the refractive index under the guide and adjacent antiguide electrodes by applying reverse biases to them.Type of Medium: Electronic ResourceURL: -
7Articles: DFG German National LicensesHuang, T. C. ; Tokura, Y. ; Torrance, J. B. ; Nazzal, A. I. ; Karimi, R.
Woodbury, NY : American Institute of Physics (AIP)
Published 1988Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: An orthorhombic-to-tetragonal phase transformation in YLaxBa2−xCu3O7 has been observed as a function of x, but with the same oxygen concentration, from x-ray powder diffraction data. Compounds with x≤0.37 have Tc in the 93–53 K range and are orthorhombic, while compounds with x≥0.45 have Tc≤42 K and are tetragonal. An analysis of the YLa0.6Ba1.4Cu3O6.99 diffraction pattern suggests that the tetragonal structure is closely related to those of the orthorhombic YBa2Cu3O7 and the tetragonal YBa2Cu3O6 with a partial substitution of La3+ ion on the Ba2+ site and a disorder of oxygen atoms at the midpoints of both a and b unit cell edges.Type of Medium: Electronic ResourceURL: -
8Articles: DFG German National LicensesBeyers, R. ; Parkin, S. S. P. ; Lee, V. Y. ; Nazzal, A. I. ; Savoy, R. ; Gorman, G. ; Huang, T. C. ; La Placa, S.
Woodbury, NY : American Institute of Physics (AIP)
Published 1988Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: We report on the crystallography and microstructure of six oxides in the Tl-Ca-Ba-Cu-O system with nominal compositions Tl1Ba2Cu1O5, Tl1Ca1Ba2Cu2O7, Tl1Ca2Ba2Cu3O9, Tl2Ba2Cu1O6, Tl2Ca1Ba2Cu2O8, and Tl2Ca2Ba2Cu3O10. The structures consist of one, two, or three Cu perovskite-like units sandwiched between Tl-O monolayers or bilayers. The predominant defects in the crystals with bilayer and trilayer Cu perovskite-like units are stacking faults that produce local intergrowths of related structures. The density of stacking defects in these oxides correlates with changes in the superconducting transition temperatures.Type of Medium: Electronic ResourceURL: -
9Articles: DFG German National LicensesHuang, T. C. ; Chung, Y. ; Dagli, N. ; Coldren, L. A.
Woodbury, NY : American Institute of Physics (AIP)
Published 1990Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: Electrically controllable optical waveguides have been created by using only the increase in refractive index from linear and quadratic electro-optic effects in GaAs/AlGaAs multiple quantum well substrates for the first time. Unlike conventional fixed waveguides, lateral guiding of this field-induced guide (FIG) can be turned on and off, so that the confinement factor, propagation constant, and net loss can be adjusted over wide ranges electrically. This special property plus a very simple fabrication process suggest that the FIG could be an important base technology for photonic integrated circuits.Type of Medium: Electronic ResourceURL: -
10Articles: DFG German National LicensesHausken, T. ; Huang, T. C. ; Lee, K. W. ; Simes, R. J. ; Dagli, N. ; Coldren, L. A.
Woodbury, NY : American Institute of Physics (AIP)
Published 1988Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: Results for two new channel waveguide phase modulators formed by impurity-induced disordering (IID) with Zn diffusion in AlGaAs/GaAs are presented. One device utilizes side diffusion into ridges of single quantum well material and the other utilizes surface diffusion into double-heterostructure material. Waveguide loss for both TE and TM polarizations, and effective index steps calculated from observed mode profiles are reported. TE/TM mode conversion was observed without bias under certain conditions. Initial results for phase modulation are in agreement with expectations and appear not to be affected by the IID.Type of Medium: Electronic ResourceURL: -
11Articles: DFG German National LicensesLee, W. Y. ; Lee, V. Y. ; Salem, J. ; Huang, T. C. ; Savoy, R. ; Bullock, D. C. ; Parkin, S. S. P.
Woodbury, NY : American Institute of Physics (AIP)
Published 1988Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: We have prepared superconducting Tl-Ca-Ba-Cu-O thin films on a variety of substrates with transition temperatures as high as (approximately-equal-to)120 K, confirmed by sharp onsets of substantial Meissner and shielding signals at the same temperatures. The properties of the films are found to depend sensitively on the post-annealing conditions. Highly textured c-axis-oriented films comprised mostly of Tl2Ca1Ba2Cu2Ox, Tl1Ca2Ba2Cu3Ox, and Tl2Ca2Ba2Cu3Ox were synthesized by varying the annealing procedure with corresponding maximum superconducting transition temperatures of (approximately-equal-to)100, 110, and 120 K, respectively.Type of Medium: Electronic ResourceURL: -
12Articles: DFG German National LicensesLefakis, H. ; Huang, T. C. ; Alexopoulos, P.
[S.l.] : American Institute of Physics (AIP)
Published 1988Staff ViewISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: Films of Fe50Mn50, 700 A(ring) thick, were deposited on glass substrates by diode rf sputtering. Auger electron spectroscopy, and x-ray fluorescence analysis verified the film composition and x-ray diffraction determined the crystalline phase to be α-Mn(Fe), a complex bcc-like structure and a considerable deviation from that dictated by the equilibrium binary phase diagram. The films were annealed for 1 h at 260 °C and 10−7, 10−5, and 10−2 Torr. Auger depth profile analysis showed that (a) while no further oxidation (than that induced by ambient exposure) occurred during annealing at the lowest pressure, severe film oxidation took place at the highest pressure and (b) preferential surface oxidation of Mn resulted in a layered structure consisting of a surface Mn- and oxygen-rich layer followed by a region (deeper into the film) depleted in Mn and Fe enriched. The crystalline phases present were determined by x-ray diffraction analysis to be MnO (fcc) and α-Fe(Mn) (bcc). Magnetic measurements of the oxidized films revealed that they displayed in-plane isotropic ferromagnetic properties, with 4πMs∼15–18 kG for the most extensively oxidized films.Type of Medium: Electronic ResourceURL: -
13Articles: DFG German National LicensesHuang, T. C. ; Hart, M. ; Parrish, W. ; Masciocchi, N.
[S.l.] : American Institute of Physics (AIP)
Published 1987Staff ViewISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: The advantages of using monochromatic and parallel synchrotron x rays for the microstructure analysis of polycrystalline materials have been studied. Analysis of line broadening from Pd powers showed encouraging results. Warren–Averbach analysis [J. Appl. Phys. 21, 595 (1950)] with respect to the three major crystal axes [111], [100], and [110] was done using 1-A(ring) x rays. Crystallite sizes and microstrains relative to the [111] direction were obtained using three different reflection pairs (111)-(222), (111)-(333), and (111)-(444). The fixed symmetrical instrument profile shape has major advantages in the correction of instrumental broadening and the determination of a low level (10−4 range) of stacking-fault probabilities.Type of Medium: Electronic ResourceURL: -
14Articles: DFG German National LicensesWu, X. S. ; Omura, E. ; Huang, T. C. ; Coldren, L. A. ; Merz, J. L.
[S.l.] : American Institute of Physics (AIP)
Published 1986Staff ViewISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: The use of a sputtered silicon film as a new type of etching mask is reported for the first time. Its desirable properties arise because of similar material characteristics (thermal expansion coefficient, crystal structure, smaller misfit factors) and different etching behavior as compared to gallium arsenide. These properties are studied and utilized in the fabrication of GaAs/GaAlAs double heterostructure (DH) ridge waveguide devices.Type of Medium: Electronic ResourceURL: -
15Articles: DFG German National LicensesStaff View
ISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: X-ray diffraction was used to investigate the effect of nitrogen additions on the crystal structure and preferred orientation of FeMn films reactively sputtered in an Ar-N2 ambient. The fcc γ-FeMn phase was stabilized over a range of nitrogen pressures. The fcc FeMn(N) film was then used as a nucleation substrate for the deposition of an FeMn/Permalloy exchange coupled structure. A maximum exchange bias of 60–70 Oe was obtained when the FeMn(N) film was lattice matched to the γ-FeMn structure (a0=3.63 A(ring)).Type of Medium: Electronic ResourceURL: -
16Articles: DFG German National LicensesLo, Jerry ; Hwang, C. ; Huang, T. C. ; Campbell, R. ; Allee, David
[S.l.] : American Institute of Physics (AIP)
Published 1987Staff ViewISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: NiFe films in the thickness range of 300 A(ring) to 8 μm with excellent magnetic properties and thickness uniformity have been prepared using a newly developed high rate (up to 1000 A(ring)/min) dual ion beam sputtering system. Deposition conditions such as the ion assist voltage, the target orientation and the partial pressure of nitrogen have been optimized to reduce coercivity Hc and stress as well as to improve film adhesion and film thermal stability. The annealing effects on Hc, the anisotropy field Hk, as well as the resistivity of the NiFe films were studied. X-ray diffraction and transmission electron microscopy techniques were used to characterize the microstructures of the films and were correlated with their magnetic properties. These ion-beam sputtered NiFe films have excellent magnetic, electrical, mechanical, and microstructural properties to make them suitable for thin-film head applications.Type of Medium: Electronic ResourceURL: -
17Articles: DFG German National LicensesLim, G. S. ; Huang, T. C. ; Bullock, D. C. ; Castillo, G.
[S.l.] : American Institute of Physics (AIP)
Published 1986Staff ViewISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: X-ray structures and magnetic properties of sputtered osmium-doped iron oxide thin films prepared under various deposition conditions have been analyzed by x-ray diffraction and vibrating sample magnetometer techniques. Results show that the crystalline phase, macrostain, and grain size play important roles in the coercivity Hc, saturation magnetization 4πMs, and squareness S* of the films. Ferrimagnetic γ-Fe2O3 and/or α-Fe of 400-A(ring) grain size or less were mainly responsible for the good coercivities and magnetizations of the films, i.e., Hc=700–1000 Oe and 4πMs=4000–6000 G. A film which contained appreciable antiferromagnetic α-Fe2O3 phase had much lower Hc(=130 Oe) and 4πMs(=1000 G). Correlation between macrostrain εn, and S* has been observed where the film with large compressive strains had low S*=0.69, and those with little or zero εn gave good squareness S*=0.79–0.81.Type of Medium: Electronic ResourceURL: -
18Articles: DFG German National LicensesTai, K. ; Lai, Y. ; Huang, K. F. ; Huang, T. C. ; Lee, T. D. ; Wu, C. C.
Woodbury, NY : American Institute of Physics (AIP)
Published 1993Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: Transverse mode emission characteristics of gain-guided surface emitting lasers at 0.85 μm were investigated. Up to six nondegenerate circularly symmetrical modes were observed with detunings between the adjacent modes around 2.5 A(ring). Numerical simulations were performed. The calculated beam sizes, difference of modal gains to account for the side mode suppression ratio when operated with one dominant mode, and wavelength detunings agreed with experiments. Numerical simulations also predict that the mirror loss due to Gaussian beam diffraction is nonnegligible for the 1.3–1.55 μm devices.Type of Medium: Electronic ResourceURL: -
19Articles: DFG German National LicensesHuang, T. C. ; Nozieres, J.-P. ; Speriosu, V. S. ; Gurney, B. A. ; Lefakis, H.
Woodbury, NY : American Institute of Physics (AIP)
Published 1993Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: Si/Ta/NiFe/Cu/NiFe/FeMn/Ta spin-valve layered structures were analyzed by x-ray reflectivity, before and after annealing at 240, 320, and 360 °C. Specularly reflected x-ray data were collected using a high-resolution reflectometer and were analyzed by least-squares refinement. The thicknesses of the individual layers in the NiFe/Cu/NiFe/FeMn magnetic sandwich remained essentially unchanged. With the exception of the FeMn/Ta interface, the widths of the buried interfaces increased rapidly with annealing temperature. The increase in widths at each of the NiFe/Cu and Cu/NiFe interfaces from 6.8 to 22.6 A(ring) caused a fivefold increase in the magnetically inactive layer in NiFe and a tenfold decrease in magnetoresistance. An increase in the total film thickness with annealing temperature was found to be caused by the surface oxidation of the Ta capping layer and the growth of a Ta silicide layer between the Ta buffer layer and the Si substrate.Type of Medium: Electronic ResourceURL: -
20Articles: DFG German National LicensesHuang, T. C. ; Nozieres, J.-P. ; Speriosu, V. S. ; Lefakis, H. ; Gurney, B. A.
Woodbury, NY : American Institute of Physics (AIP)
Published 1992Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: The amount of intermixing at the interfaces of sputter-deposited spin-valve layered structures, comprising Si/Ta (50 A(ring))/NiFe (75 A(ring))/Cu (22.5 A(ring))/NiFe (50 A(ring))/FeMn (110 A(ring))/Ta (50 A(ring)), were obtained from least-squares refinement of x-ray reflectivity data. The observations were modeled by layers of nominal composition with compositional inhomogeneity at the interfaces. Layer thicknesses deduced from x-ray analysis were generally within a few percent of the nominal values. Interface widths between the two NiFe layers and the Cu spacer were 6.2-7.4 A(ring), indicating intermixing of atoms of about three monolayers at the interfaces. A 10.0-A(ring) interface width was found at the FeMn interface suggesting a mixed-phase layer of α- and γ-FeMn. Layer densities, except those of the less dense Ta underlayer and the oxidized Ta surface, agreed to within 10% of bulk values. The results were in agreement with those obtained from closely related Si/Ta/NiFe/Cu/NiFe/Ta, Si/Ta/NiFe/Cu/Ta, Si/Ta/NiFe/Ta, and Si/Ta films.Type of Medium: Electronic ResourceURL: