Search Results - (Author, Cooperation:S. Schauer)

2011-06-18

American Association for the Advancement of Science (AAAS)

0036-8075

1095-9203

Biology

Chemistry and Pharmacology

Computer Science

Medicine

Natural Sciences in General

Physics

Adipose Tissue, White/*enzymology/pathology ; Animals ; Blood Glucose/metabolism ; Body Mass Index ; Body Weight ; Cachexia/*enzymology/etiology/pathology ; Cytokines/blood ; Fatty Acids/blood ; Glycerol/metabolism ; Humans ; Lipase/deficiency/genetics/*metabolism ; *Lipolysis ; Melanoma, Experimental ; Mice ; Mice, Inbred C57BL ; Muscle, Skeletal/pathology ; Myocardium/pathology ; Neoplasms/complications/*enzymology/pathology ; Neoplasms, Experimental/complications/*enzymology/pathology ; Peptides/metabolism ; Sterol Esterase/deficiency/genetics/*metabolism ; Triglycerides/blood ; Weight Loss

2018-02-16

American Society of Hematology (ASH)

0006-4971

1528-0020

Biology

Medicine

Myeloid Neoplasia

1089-7550

AIP Digital Archive

Physics

The microstructure and electrical properties of nonalloyed epitaxial Au-Ge contacts were studied. Ohmic behavior was obtained after a 3 h anneal at 320 °C with the lowest average contact resistance and specific contact resistivity found to be ∼0.28 Ω mm and ∼7×10−6 Ω cm2, respectively. Localized reactions in the form of islands were observed across the surface of the contact after annealing and were composed of Au, Ge, and As, as determined by secondary ion mass spectroscopy (SIMS) imaging and Auger depth profiling. Back side SIMS profiles indicate deep Ge and Au diffusion into the GaAs substrate in the island regions. Ohmic contact behavior was found to depend upon both the kinetics of the reactions (localized reactions and island growth) and the thermodynamics (substantial diffusion of both Au and Ge) of the system. A model describing the coupled Au and Ge in-diffusion with respect to the GaAs substrate is presented.

Electronic Resource

1077-3118

AIP Digital Archive

Physics

Phosphorus-doped polycrystalline and homoepitaxial diamond films were grown using both microwave and dc plasma assisted chemical vapor deposition. P incorporation was quantified using secondary ion mass spectrometry, and was approximately ten times greater for polycrystalline films deposited using dc plasmas compared to microwave plasmas. For microwave-assisted growth, P incorporation was approximately ten times greater in polycrystalline than homoepitaxial films. These effects appear to be due to preferential incorporation at grain boundaries, since higher levels of P are measured in samples with smaller grains. The films were highly electrically resistive, with conductivities of 10−10–10−9/Ω cm at room temperature.

Electronic Resource

1077-3118

AIP Digital Archive

Physics

Two heavily carbon doped InGaAs samples (2.20×1019 and 1.92×1019 cm−3) with low In mol fractions (1% and 8%) were annealed with or without silicon nitride caps in H2 containing 0.3% AsH3 over the temperature range 5000–800 °C. Hall effect, secondary ion mass spectroscopy, double crystal x-ray diffraction, and integrated photoluminescence measurements showed that H outdiffuses over the annealing temperature range when the films were capped with silicon nitride. However, there was almost no net H outdiffusion for uncapped samples annealed in the same ambient and temperature range. Recombination centers formed during high temperature anneals in samples with less In (1%), but did not appear to form as readily in the one with more In (8%).

Electronic Resource

1077-3118

AIP Digital Archive

Physics

The hole concentrations and lattice mismatch with the GaAs substrate of heavily carbon-doped epilayers (4.7×1019 and 9.8×1019 cm−3) were increased and the mobilities were decreased as compared with the as-grown samples by rapid thermal annealing silicon nitride capped samples at temperatures from 500 to 900 °C. However, for the more heavily doped sample, the hole concentration, mobility, and lattice mismatch decreased with increasing annealing temperature for annealing temperatures higher than 700 °C, but the hole concentration and lattice mismatch were still larger than those of the as-grown samples. Secondary ion mass spectroscopy results showed that annealing produced no change in the C concentration or distribution, but the hydrogen concentration decreased. Cross-sectional transmission electron microscopy indicated that no mismatch dislocations formed at the interface.

Electronic Resource