Search Results - (Author, Cooperation:S. Pei)

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  1. 1
    Staff View
    Publication Date:
    2014-05-30
    Publisher:
    Nature Publishing Group (NPG)
    Print ISSN:
    0028-0836
    Electronic ISSN:
    1476-4687
    Topics:
    Biology
    Chemistry and Pharmacology
    Medicine
    Natural Sciences in General
    Physics
    Keywords:
    Cell Line, Tumor ; Cytarabine/metabolism/pharmacology ; *Drug Resistance, Neoplasm/drug effects/genetics ; Gene Deletion ; Glucuronic Acid/*metabolism ; Glucuronosyltransferase/biosynthesis/*metabolism ; Hedgehog Proteins/*metabolism ; Humans ; Leukemia, Myeloid, Acute/*drug therapy/enzymology/*metabolism/pathology ; Ribavirin/metabolism/pharmacology ; Signal Transduction ; Transcription Factors/antagonists & inhibitors/genetics/*metabolism
    Published by:
    http://www.nature.com/

    Latest Papers from Table of Contents or Articles in Press
  2. 2
    Staff View
    Publication Date:
    2018-05-08
    Publisher:
    Rockefeller University Press
    Print ISSN:
    0022-1007
    Electronic ISSN:
    1540-9538
    Topics:
    Medicine
    Keywords:
    Autoimmunity, Innate Immunity and Inflammation
    Published by:
    http://www.rupress.org/

    Latest Papers from Table of Contents or Articles in Press
  3. 3
    Yang, Rui Q. ; Pei, S. S.

    [S.l.] : American Institute of Physics (AIP)
    Published 1996
    Staff View
    ISSN:
    1089-7550
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    A new class of quantum cascade lasers based on type-II quantum wells is analyzed. In these novel mid- and long-wavelength IR lasers, not only can a population inversion be easily created with a nearly 100% current injection efficiency, but also the nonradiative loss from the optical phonon scattering can be greatly suppressed. A general description of how the lasing threshold current depends on the injection, radiative, and inversion efficiencies is formulated to illustrate the expected improvements over the recently reported quantum cascade laser. Also, the features that distinguish quantum cascade lasers from traditional bipolar lasers are discussed in the context of the carrier transport in equivalent circuit models to illustrate the advantages of quantum cascade lasers for high power mid- and long-wavelength IR source applications. © 1996 American Institute of Physics.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.362554

    Articles: DFG German National Licenses
  4. 4
    Yang, B. H. ; Zhang, D. ; Yang, Rui Q. ; Lin, C.-H. ; Murry, S. J. ; Pei, S. S.

    Woodbury, NY : American Institute of Physics (AIP)
    Published 1998
    Staff View
    ISSN:
    1077-3118
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    An external differential quantum efficiency exceeding 200% has been observed from 4 μm InAs/InGaSb/AlSb interband cascade lasers under 1 μs pulses and 0.1% duty cycle at 80 K. By increasing the pulse lengths and the repetition rates, average powers 〉16 mW have been measured with 5 μs pulses at 10% duty cycle, the internal quantum efficiency and the internal loss are determined to be 220% and 14 cm−1, respectively. © 1998 American Institute of Physics.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.121265

    Articles: DFG German National Licenses
  5. 5
    Yang, Rui Q. ; Yang, B. H. ; Zhang, D. ; Lin, C.-H. ; Murry, S. J. ; Wu, H. ; Pei, S. S.

    Woodbury, NY : American Institute of Physics (AIP)
    Published 1997
    Staff View
    ISSN:
    1077-3118
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    We report a high power mid-infrared interband cascade laser operating at temperatures up to 170 K. The threshold current densities of this laser are considerably lower than the previously reported values in cascade lasers. The structure was grown by molecular beam epitaxy on a GaSb substrate and comprises 23 periods of active regions separated by digitally graded multilayer injection regions. A peak optical output power of ∼0.5 W/facet and a slope of 211 mW/A per facet, corresponding to a differential external quantum efficiency of 131%, are observed at 80 K and at a wavelength of ∼3.9 μm. © 1997 American Institute of Physics.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.120076

    Articles: DFG German National Licenses
  6. 6
    Yang, Rui Q. ; Lin, Chih-Hsiang ; Murry, S. J. ; Pei, S. S.

    Woodbury, NY : American Institute of Physics (AIP)
    Published 1997
    Staff View
    ISSN:
    1077-3118
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    Interband cascade electroluminescence in the 5–8 μm spectrum region is observed from a staircase of Sb-based type-II quantum well structures. The structure was grown by molecular beam epitaxy on a GaSb substrate and comprises 15 periods of active regions separated by digitally graded multilayer injection regions. The device has been operated at 300 and 77 K with an output optical power up to 700 nW. The strong blue shift of the electroluminescent peak with the applied bias due to the Stark effect has also been observed. © 1997 American Institute of Physics.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.118806

    Articles: DFG German National Licenses
  7. 7
    Ren, F. ; Pearton, S. J. ; Lothian, J. R. ; Chu, S. N. G. ; Chu, W. K. ; Wilson, R. G. ; Abernathy, C. R. ; Pei, S. S.

    Woodbury, NY : American Institute of Physics (AIP)
    Published 1994
    Staff View
    ISSN:
    1077-3118
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    Nonalloyed Ti/Pt/Au contacts deposited in situ onto nitrogen ion bombarded n-type InP show contact resistivities as low as 3.4×10−6 Ω cm2. Acceleration voltages of 100–300 V and exposure times of 3–11 min were used to remove InP native oxide and produce a shallow (≤300 A(ring)) disordered donor layer on which ohmic contacts were deposited. Electron diffraction patterns matching those of polycrystalline InN were identified in this degenerately doped surface layer, which was further characterized by secondary ion mass spectrometry and ion channeling. Similar layers produced by Ar ion bombardment under the same conditions showed much higher contact resistivities (∼10−4 Ω cm2), indicating that the InN formation is beneficial for contact properties. © 1994 American Institute of Physics.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.112750

    Articles: DFG German National Licenses
  8. 8
    Lee, S. W. ; Chu, K. U. ; Kim, S. W. ; Park, S. ; Kwon, O'D. ; Goossen, K. W. ; Pei, S. S.

    Woodbury, NY : American Institute of Physics (AIP)
    Published 1994
    Staff View
    ISSN:
    1077-3118
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    Optical switches have been fabricated from InGaAs/GaAs shallow quantum well structures grown by metalorganic vapor phase epitaxy. The photocurrent spectra exhibited very sharp room-temperature exciton peaks around 900 nm. Quantum well modulators consisting of such a shallow system showed contrast ratios larger than 2:1 and no sign of strain-induced degradations. The epitaxial quality, however, had some interesting dependence on the choice of substrate dopant.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.111348

    Articles: DFG German National Licenses
  9. 9
    Levine, B. F. ; Gunapala, S. D. ; Kuo, J. M. ; Pei, S. S. ; Hui, S.

    Woodbury, NY : American Institute of Physics (AIP)
    Published 1991
    Staff View
    ISSN:
    1077-3118
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    The first long wavelength quantum well infrared photodetector based on valence band intersubband absorption holes is demonstrated. A normal incidence quantum efficiency of η=28% and detectivity of D*λ=3.1×1010 cm (square root of)Hz/W at T=77 K, for a cutoff wavelength λc=7.9 μm, have been achieved.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.106170

    Articles: DFG German National Licenses
  10. 10
    Lin, Chih-Hsiang ; Pei, S. S.

    Woodbury, NY : American Institute of Physics (AIP)
    Published 1997
    Staff View
    ISSN:
    1077-3118
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    Optically pumped InAs/InGaSb/InAs/AlSb type-II quantum well lasers emitting from 4.1 to 4.36 μm were operated up to 226 K with a characteristic temperature T0 of 30 K. The absorbed threshold pump intensity at 0.98 μm was 0.12 kW/cm2 at 100 K, and 3.25 kW/cm2 at 200 K with a pulse length of 5 μs and a repetition rate of 2 kHz. At 73 K, the peak output power was 250 mW per facet with a pulse length of 10 μs and a repetition rate of 10 kHz. A cw output power of 14.7 mW was observed at 74 K. © 1997 American Institute of Physics.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.120313

    Articles: DFG German National Licenses
  11. 11
    Malin, J. I. ; Meyer, J. R. ; Felix, C. L. ; Lindle, J. R. ; Goldberg, L. ; Hoffman, C. A. ; Bartoli, F. J. ; Lin, C.-H. ; Chang, P. C. ; Murry, S. J. ; Yang, R. Q. ; Pei, S.-S.

    Woodbury, NY : American Institute of Physics (AIP)
    Published 1996
    Staff View
    ISSN:
    1077-3118
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    Pulsed, optically pumped four-constituent Type-II (InAs-Ga1−xInxSb-InAs-AlSb) quantum well lasers emitting at 3.9–4.1 μm were observed to lase up to 285 K with a characteristic temperature T0 of 35 K for 170 K ≤Top≤270 K. A theoretical analysis predicts dramatic further improvements once the potential for suppressing Auger recombination is fully realized. © 1996 American Institute of Physics.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.116374

    Articles: DFG German National Licenses
  12. 12
    Luo, G. P. ; Peng, C. ; Le, H. Q. ; Pei, S. S.

    Woodbury, NY : American Institute of Physics (AIP)
    Published 2001
    Staff View
    ISSN:
    1077-3118
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    Grating-coupled external-cavity quantum-cascade lasers were studied for temperatures from 80 to 230 K. At 80 K, a tuning range of ∼65–88 nm are obtained for 4.5 and 5.1 μm laser amplifiers, respectively. The tuning ranges for both narrowed substantially with increasing temperature, to ∼23 nm at 203 K. The threshold varied slowly versus wavelength, while the efficiency appeared to be close to optimum toward wavelengths shorter than the free running wavelength. © 2001 American Institute of Physics.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.1371524

    Articles: DFG German National Licenses
  13. 13
    Staff View
    ISSN:
    0921-4534
    Source:
    Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics:
    Physics
    Type of Medium:
    Electronic Resource
    URL:
    http://linkinghub.elsevier.com/retrieve/pii/0921-4534(90)90460-V

    Articles: DFG German National Licenses
  14. 14
    Staff View
    ISSN:
    0921-4534
    Source:
    Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics:
    Physics
    Type of Medium:
    Electronic Resource
    URL:
    http://linkinghub.elsevier.com/retrieve/pii/0921-4534(90)90656-Y

    Articles: DFG German National Licenses
  15. 15
    Staff View
    ISSN:
    0921-4534
    Source:
    Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics:
    Physics
    Type of Medium:
    Electronic Resource
    URL:
    http://linkinghub.elsevier.com/retrieve/pii/0921-4534(89)91153-2

    Articles: DFG German National Licenses
  16. 16
    Staff View
    ISSN:
    0921-4534
    Source:
    Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics:
    Physics
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1016/0921-4534(92)90966-G

    Articles: DFG German National Licenses
  17. 17
    Staff View
    ISSN:
    0921-4534
    Source:
    Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics:
    Physics
    Type of Medium:
    Electronic Resource
    URL:
    http://linkinghub.elsevier.com/retrieve/pii/0921-4534(90)90676-6

    Articles: DFG German National Licenses
  18. 18
    Staff View
    ISSN:
    0921-4534
    Source:
    Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics:
    Physics
    Type of Medium:
    Electronic Resource
    URL:
    http://linkinghub.elsevier.com/retrieve/pii/0921-4534(90)90593-4

    Articles: DFG German National Licenses
  19. 19
    Staff View
    ISSN:
    0921-4534
    Source:
    Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics:
    Physics
    Type of Medium:
    Electronic Resource
    URL:
    http://linkinghub.elsevier.com/retrieve/pii/0921-4534(92)90655-V

    Articles: DFG German National Licenses
  20. 20
    Staff View
    ISSN:
    0921-4534
    Source:
    Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics:
    Physics
    Type of Medium:
    Electronic Resource
    URL:
    http://linkinghub.elsevier.com/retrieve/pii/0921-4534(89)90936-2

    Articles: DFG German National Licenses