Search Results - (Author, Cooperation:S. Orlando)
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1Latest Papers from Table of Contents or Articles in PressF. Reale ; S. Orlando ; P. Testa ; G. Peres ; E. Landi ; C. J. Schrijver
American Association for the Advancement of Science (AAAS)
Published 2013Staff ViewPublication Date: 2013-06-22Publisher: American Association for the Advancement of Science (AAAS)Print ISSN: 0036-8075Electronic ISSN: 1095-9203Topics: BiologyChemistry and PharmacologyComputer ScienceMedicineNatural Sciences in GeneralPhysicsPublished by: -
2Articles: DFG German National LicensesDi Palma, T.M. ; Gambardella, U. ; Giardini, A. ; Marotta, V. ; Martino, R. ; Morone, A. ; Orlando, S.
Amsterdam : ElsevierStaff ViewISSN: 0921-4534Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002Topics: PhysicsType of Medium: Electronic ResourceURL: -
3Articles: DFG German National LicensesPerna, G. ; Capozzi, V. ; Plantamura, M.C. ; Minafra, A. ; Orlando, S. ; Marotta, V.
Springer
Published 2002Staff ViewISSN: 1434-6036Keywords: PACS. 61.10.Eq X-ray scattering – 78.40.Fy Semiconductors – 78.55.Et II-VI semiconductorsSource: Springer Online Journal Archives 1860-2000Topics: PhysicsNotes: Abstract: ZnSe films were deposited by pulsed laser ablation on a crystalline GaAs substrate and on an amorphous quartz substrate. The deposition process was performed with the same growth parameters. The films were investigated by means of X-ray diffraction, reflectance and photoluminescence spectroscopy. The X-ray diffraction spectra have demonstrated that the films grow in a highly oriented way but having different orientations, i.e. the films deposited on GaAs grow (100)-oriented and the films deposited on quartz grow (111)-oriented. Reflectance spectra as a function of the temperature have been analysed by means of the classical oscillator model, in order to obtain the temperature dependence of the band gap energy. This gives results comparable to those of ZnSe single crystals for ZnSe on GaAs, but it is red-shifted for ZnSe on quartz, because of lattice and thermal strains. The photoluminescence measurements at T = 10 K confirm the better quality of ZnSe deposited on GaAs and show that pulsed laser ablation is a promising technique to grow films having intrinsic luminescence even on an amorphous substrate.Type of Medium: Electronic ResourceURL: -
4Articles: DFG German National LicensesStaff View
ISSN: 1432-0630Keywords: PACS: 81.15.Fg; 81.05.-t; 73.61.LeSource: Springer Online Journal Archives 1860-2000Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision MechanicsPhysicsNotes: Abstract. Pulsed laser ablation is a very interesting method of depositing thin films of several materials and compounds, such as oxides, nitrides, insulators, semiconductors, and superconductors. Indium and tin oxide polycrystalline thin films have been grown on silicon (100) substrates by reactive PLD from two metallic targets of indium and tin by multilayered deposition, in the presence of oxygen, using a frequency-doubled Nd-YAG laser (λ=532 nm). The films produced have been studied to evaluate their use as NO gas sensors, and the best performance has been found by varying some important parameters, such as the substrate temperature and the pressure of oxygen in the deposition chamber. X-ray diffraction analysis of the deposited films shows that they are polycrystalline with a preferential (400) orientation. Electrical resistivity measurements, performed by using a four-point probe technique, show a sharp increase in resistivity when the films are exposed to NO. The electrical responses of tin oxide-indium oxide multilayered thin films are reported.Type of Medium: Electronic ResourceURL: -
5Articles: DFG German National LicensesCappelli, E. ; Orlando, S. ; Mattei, G. ; Montozzi, M. ; Pinzari, F. ; Sciti, D.
Springer
Published 1999Staff ViewISSN: 1432-0630Keywords: PACS: 82.80.Ch; 81.05.Je; 81.65.-b; 78.70.-gSource: Springer Online Journal Archives 1860-2000Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision MechanicsPhysicsNotes: Abstract. It is well known that sintered ceramics are very hard and difficult materials to process and machine by traditional methods. An easy and available solution seems to be a pulsed laser treatment, under appropriate experimental conditions (pulse duration and energy, radiation incidence angle, working atmospheres, etc.). In these experiments, in order to modify the structure and morphology of the surface, polycrystalline sintered SiC substrates were irradiated with an ArF (λ=193 nm,hν=6.4 eV,τ=30 ns) pulsed laser, at different fluences and at grazing incidence angle. Since it is well known that laser irradiation can produce both a dissociation of surface compounds and a high level of amorphisation (owing to very rapid cooling of melted material) different working atmospheres (Ar or O2 or CH4) and substrate heating (∼700 °C) have been used, with the aim of confining and controlling any chemical and physical transformation produced by laser-material interaction. Morphological and structural modifications have been studied by SEM/EDAX microscopy. Surface chemistry has been analysed by Raman spectroscopy. Changes in surface roughness have also been quantified by AFM microscopy.Type of Medium: Electronic ResourceURL: -
6Articles: DFG German National LicensesGiardini-Guidoni, A. ; Ferro, D. ; Gambardella, U. ; Marotta, V. ; Martino, R. ; Morone, A. ; Orlando, S.
Amsterdam : ElsevierStaff ViewISSN: 0040-6090Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002Topics: PhysicsType of Medium: Electronic ResourceURL: -
7Articles: DFG German National LicensesFerro, D. ; Gambardella, U. ; Marotta, V. ; Martino, R. ; Morone, A. ; Orlando, S. ; Parisi, G.P.
Amsterdam : ElsevierStaff ViewISSN: 0169-4332Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002Topics: PhysicsType of Medium: Electronic ResourceURL: -
8Articles: DFG German National LicensesStaff View
ISSN: 1573-093XSource: Springer Online Journal Archives 1860-2000Topics: PhysicsNotes: Abstract We present a method to study the solar-stellar connection, i.e., the close similarity of the physical phenomena occurring on the Sun and on late-type active stars, by taking advantage of Yohkoh/SXT X-ray images. From such images, we first generate distribution functions of the whole disk differential emission measure, and then synthesize from these spectra analogous to those collected by X-ray telescope instruments aimed at stars other than the Sun. Here we illustrate the application of this method to the ROSAT/PSPC and ASCA/SIS, and discuss test cases as well as future applications.Type of Medium: Electronic ResourceURL: -
9Articles: DFG German National LicensesStaff View
ISSN: 0392-6737Keywords: Superconducting perovskites and related structures ; Treatment of materials and its effects on microstructure and properties ; Conductivity phenomena in semiconductors and insulators ; Conference proceedingsSource: Springer Online Journal Archives 1860-2000Topics: PhysicsNotes: Summary The transformation of the 2223 (n=3) phase in the 2201 (n=1) phase by heating the sample in Ar atmosphere was studied. The subsequent cycling of the sample temperature and the oxygen enrichment of the gas phase convert the 2201 (n=1) phase in the 2223 (n=3) phase in the presence of the 2212 (n=2) and Ca2PbO4 compound. Thein situ resistivity measurements,T c values and XRD carried out on the sample confirm these phase changes. The experiment indicates that this process is oxygen dependent at low oxygen partial pressure.Type of Medium: Electronic ResourceURL: -
10Articles: DFG German National LicensesStaff View
ISSN: 1573-6857Keywords: DHFR amplification ; fluorescencein situ hybridization ; marker chromosomes ; satellite DNASource: Springer Online Journal Archives 1860-2000Topics: BiologyNotes: Abstract This study centers on marker chromosomes carrying expanded chromosomal regions which were observed in two independent derivatives of the AA12 murine fibrosarcoma line, the 10−3 M MTX-res H2 and the 5×10−7 M MTX-res E. Previous characterization of the marker chromosomes of MTX-res variants showed their common derivation from a marker chromosome (m) of the parental line, endowed with two interstitial C-bands. Cytogenetic evidence pointed to one C-band ofm as the site involved in the chromosomal rearrangements leading to the HSR/ASR chromosomes. ISH of a3H-labeled satellite DNA probe allowed satellite sequences flanking the HSR/ASR in the marker chromosomes, where the C-band was no longer visible, to be detected. FISH experiments using biotinylated DHFR and satellite DNA probes showed that the respective target sequences are contiguous in new marker chromosomes. They also allowed inter- and intrachromosomal rearrangements to be seen at DHFR amplicons and satellite sequences. Double-color FISH using digoxygenated satellite DNA and biotinylated pDHFR7 showed that in a marker chromosome from the H2 cell line the two target sequences are not only adjacent, but closer than 3 Mb, as indicated by overlapping of the different fluorescence signals given by the two probes. Another marker chromosome in the E variant was shown to display a mixed ladder structure consisting of a head-to-head tandem of irregularly-sized satellite DNA blocks, with two symmetrical interspersed DHFR clusters.Type of Medium: Electronic ResourceURL: -
11Articles: DFG German National LicensesStaff View
ISSN: 1572-9672Keywords: Hydrodynamics ; Loop Models ; Solar PhysicsSource: Springer Online Journal Archives 1860-2000Topics: PhysicsNotes: Abstract We present a study of stationary flows in closed solar coronal loops. The hydrodynamic differential equations of plasma flow and energy balance are integrated with algorithms which achieve high reliability. We present here results on the detailed synthesis of loop emission in specific bands and lines, taking into account also non-equilibrium ionization.Type of Medium: Electronic ResourceURL: