Search Results - (Author, Cooperation:S. Nishikawa)

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  1. 1
    D. Kamiya ; S. Banno ; N. Sasai ; M. Ohgushi ; H. Inomata ; K. Watanabe ; M. Kawada ; R. Yakura ; H. Kiyonari ; K. Nakao ; L. M. Jakt ; S. Nishikawa ; Y. Sasai
    Nature Publishing Group (NPG)
    Published 2011
    Staff View
    Publication Date:
    2011-02-18
    Publisher:
    Nature Publishing Group (NPG)
    Print ISSN:
    0028-0836
    Electronic ISSN:
    1476-4687
    Topics:
    Biology
    Chemistry and Pharmacology
    Medicine
    Natural Sciences in General
    Physics
    Keywords:
    Animals ; Bone Morphogenetic Protein 4/deficiency/genetics/metabolism ; Cadherins/metabolism ; *Cell Differentiation ; Cell Lineage ; Cells, Cultured ; Embryo, Mammalian/cytology/embryology/metabolism ; Embryonic Stem Cells/*cytology/metabolism ; Gene Expression Regulation, Developmental/genetics ; Germ Layers/cytology/embryology/metabolism ; HEK293 Cells ; Humans ; Mice ; Models, Biological ; Neural Plate/cytology/embryology/metabolism ; Neural Stem Cells/*cytology/metabolism ; Oligonucleotide Array Sequence Analysis ; SOXB1 Transcription Factors/metabolism ; Transcription Factors/deficiency/genetics/*metabolism ; Transcriptional Activation ; Xenopus ; p300-CBP Transcription Factors/metabolism
    Published by:
    Latest Papers from Table of Contents or Articles in Press
  2. 2
    Staff View
    ISSN:
    0303-7207
    Keywords:
    Binding ; Bioassay ; Human growth hormone ; Receptor ; Site-directed mutagenesis
    Source:
    Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics:
    Biology
    Medicine
    Type of Medium:
    Electronic Resource
    URL:
    Articles: DFG German National Licenses
  3. 3
    Ito, S. ; Nakamura, T. ; Nishikawa, S.

    [S.l.] : American Institute of Physics (AIP)
    Published 1995
    Staff View
    ISSN:
    1089-7550
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    Pattern dependence of the growth rate and Ge content in selective epitaxial Si1−xGex growth using reduced-pressure chemical vapor deposition has been examined for the SiH2Cl2-GeH4-H2 system. Contrary to selective epitaxial Si growth where pattern dependence diminishes at low growth temperatures, the growth rate of selectively grown Si1−xGex layers depends on the ratio of the exposed Si area to the oxide-covered area on a wafer, at temperatures as low as 600 °C. The Ge content in the layers also depends on the ratio, and the dependence is greater at higher temperatures. Adding HCl to the gas phase decreases the pattern dependence of both growth rate and Ge content. Although, in terms of the growth rate, an optimum HCl flow rate for pattern-insensitive growth exists, the Ge content in the layers is always higher for the wafer with a smaller exposed area. © 1995 American Institute of Physics.
    Type of Medium:
    Electronic Resource
    URL:
    Articles: DFG German National Licenses
  4. 4
    Kakinuma, H. ; Nishikawa, S. ; Watanabe, T. ; Nihei, K.

    [S.l.] : American Institute of Physics (AIP)
    Published 1985
    Staff View
    ISSN:
    1089-7550
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    We have investigated the effects of boron doping on the electrical properties of glow-discharge amorphous silicon (a-Si:H) films prepared at a high-deposition rate (HDR), comparing these effects with those of lower rates. The HDR a-Si:H showed a higher doping efficiency, i.e., a larger portion of substitutionally doped boron than the other films by means of dark conductivity, activation energy measurements and quantitative analysis of boron. It also showed that the minimum B2H6 to SiH4 ratio which changes the film from intrinsic to p-type in photoconductivity is one order of magnitude smaller than that for dark conductivity.
    Type of Medium:
    Electronic Resource
    URL:
    Articles: DFG German National Licenses
  5. 5
    Kakinuma, H. ; Fukuda, H. ; Nishikawa, S. ; Watanabe, T. ; Nihei, K.

    [S.l.] : American Institute of Physics (AIP)
    Published 1987
    Staff View
    ISSN:
    1089-7550
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    Hard hydrogenated amorphous carbon (a-C:H) films were coated on amorphous silicon photoreceptors by the plasma decomposition of acetylene (C2H2). This overlayer proved to be a much better protective layer for the adsorption of external species compared to an a-SiNx or a-Si1−xCx overcoating layer, and the image degradation induced by such adsorption was considerably reduced. The highly protective properties were attributed to the hydrophobic nature of C–Hn (n=1–3) and C–C bonds contained in the a-C:H film. The optical properties of the a-C:H films are also described.
    Type of Medium:
    Electronic Resource
    URL:
    Articles: DFG German National Licenses
  6. 6
    Kakinuma, H. ; Nishikawa, S. ; Watanabe, T. ; Nihei, K.

    [S.l.] : American Institute of Physics (AIP)
    Published 1986
    Staff View
    ISSN:
    1089-7550
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    We have found a strong correlation between intrinsic stress and hydrogen bonding in glow-discharge amorphous silicon (a-Si:H) films. The stress of high-deposition-rate (HDR) films continuously changes from tensile to compressive with increasing rf power. In contrast, low-deposition-rate (LDR) films indicated compressive stress in all the rf power range which was varied. However, adding a small amount of Ar to SiH4 in the LDR film deposition changes its stress from compressive to tensile as in the HDR films. IR absorption spectroscopies showed that films with compressive stress always indicated a smaller ratio of absorptions at 2070 and 2000 cm−1 α(2070)/α(2000) than the value Rc(=0.9–1.2), whereas those with tensile stress showed a larger ratio. Consequently, zero or very weak stress is reached at the ratio approximately equal to Rc, regardless of varying deposition parameters. It is also shown that annealing alters the stress of all the HDR films to strong tensile, and that α(2070)/α(2000) decreases, differing from the correlation where the rf power and Ar mixing ratio are varied.
    Type of Medium:
    Electronic Resource
    URL:
    Articles: DFG German National Licenses
  7. 7
    Ito, S. ; Nakamura, T. ; Nishikawa, S.

    Woodbury, NY : American Institute of Physics (AIP)
    Published 1996
    Staff View
    ISSN:
    1077-3118
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    The dependences of the Ge/Si ratio in epitaxial Si1−xGex layers grown using a SiH2Cl2–GeH4–H2 mixture by reduced-pressure chemical vapor deposition on the flow rate ratio of GeH4/SiH2Cl2 and on the total flow rate have been examined in the temperature range from 480 to 600 °C. As previously reported, the Ge/Si ratio does not increase linearly with the flow rate ratio; instead, the rate of increase decreases at high flow rate ratios. Additionally, it increases with increasing total flow rate when the ratio of GeH4/SiH2Cl2 is fixed. It is found that these flow rate dependences are well accounted for by assuming that the reaction order for SiH2Cl2 adsorption is twice as large as that for GeH4 adsorption. © 1996 American Institute of Physics.
    Type of Medium:
    Electronic Resource
    URL:
    Articles: DFG German National Licenses
  8. 8
    Staff View
    ISSN:
    0006-291X
    Source:
    Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics:
    Biology
    Chemistry and Pharmacology
    Physics
    Type of Medium:
    Electronic Resource
    URL:
    Articles: DFG German National Licenses
  9. 9
    Staff View
    ISSN:
    0006-291X
    Source:
    Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics:
    Biology
    Chemistry and Pharmacology
    Physics
    Type of Medium:
    Electronic Resource
    URL:
    Articles: DFG German National Licenses
  10. 10
    Staff View
    ISSN:
    0006-291X
    Source:
    Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics:
    Biology
    Chemistry and Pharmacology
    Physics
    Type of Medium:
    Electronic Resource
    URL:
    Articles: DFG German National Licenses
  11. 11
    Staff View
    ISSN:
    0005-2787
    Source:
    Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics:
    Biology
    Type of Medium:
    Electronic Resource
    URL:
    Articles: DFG German National Licenses
  12. 12
    Staff View
    ISSN:
    0922-338X
    Source:
    Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics:
    Process Engineering, Biotechnology, Nutrition Technology
    Type of Medium:
    Electronic Resource
    URL:
    Articles: DFG German National Licenses
  13. 13
    Tsuchihashi, M. ; Nishikawa, S. ; Mil, K. ; Okamura, M.

    Amsterdam : Elsevier
    Staff View
    ISSN:
    0001-4575
    Source:
    Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics:
    Architecture, Civil Engineering, Surveying
    Psychology
    Type of Medium:
    Electronic Resource
    URL:
    Articles: DFG German National Licenses
  14. 14
    Staff View
    ISSN:
    0014-5793
    Keywords:
    Cap binding activity ; Cassette mutagenesis ; Human cap binding protein
    Source:
    Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics:
    Biology
    Chemistry and Pharmacology
    Physics
    Type of Medium:
    Electronic Resource
    URL:
    Articles: DFG German National Licenses
  15. 15
    Staff View
    ISSN:
    0014-5793
    Keywords:
    HDV ribozyme ; Point mutation ; Pseudoknot structure ; Self-cleavage activity ; Single-stranded region
    Source:
    Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics:
    Biology
    Chemistry and Pharmacology
    Physics
    Type of Medium:
    Electronic Resource
    URL:
    Articles: DFG German National Licenses
  16. 16
    Staff View
    ISSN:
    0014-5793
    Keywords:
    Mutant RNase T"1 ; Non-specific binding ; Recognition ; X-ray
    Source:
    Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics:
    Biology
    Chemistry and Pharmacology
    Physics
    Type of Medium:
    Electronic Resource
    URL:
    Articles: DFG German National Licenses
  17. 17
    Staff View
    ISSN:
    0014-4827
    Source:
    Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics:
    Biology
    Medicine
    Type of Medium:
    Electronic Resource
    URL:
    Articles: DFG German National Licenses
  18. 18
    Staff View
    ISSN:
    0014-5793
    Keywords:
    (Pseudomonas paucimobilis SYK-6) ; Aryl ether cleaving enzyme, β- ; Arylglycerol-β-aryl ether linkage ; Cell-free lysate ; Lignin metabolism ; Membrane enzyme
    Source:
    Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics:
    Biology
    Chemistry and Pharmacology
    Physics
    Type of Medium:
    Electronic Resource
    URL:
    Articles: DFG German National Licenses
  19. 19
    Staff View
    ISSN:
    0014-5793
    Keywords:
    (Pseudomonas paucimobilis SYK-6) ; Aromatic ring fission ; Biphenyl structure ; Lignin metabolism ; Protocatechuate-4,5-dioxygenase ; Syringic acid
    Source:
    Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics:
    Biology
    Chemistry and Pharmacology
    Physics
    Type of Medium:
    Electronic Resource
    URL:
    Articles: DFG German National Licenses
  20. 20
    Staff View
    ISSN:
    0014-5793
    Keywords:
    Alkaline phosphatase ; Recombinant protein ; Ribonuclease T"1 ; Secretion ; Signal peptide
    Source:
    Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics:
    Biology
    Chemistry and Pharmacology
    Physics
    Type of Medium:
    Electronic Resource
    URL:
    Articles: DFG German National Licenses