Search Results - (Author, Cooperation:S. Miura)

Showing 1 - 20 results of 112, query time: 0.35s Refine Results
  1. 1
  2. 2
    T. Sun ; K. Wang ; T. Iinuma ; R. Hino ; J. He ; H. Fujimoto ; M. Kido ; Y. Osada ; S. Miura ; Y. Ohta ; Y. Hu
    Nature Publishing Group (NPG)
    Published 2014
    Staff View
    Publication Date:
    2014-09-19
    Publisher:
    Nature Publishing Group (NPG)
    Print ISSN:
    0028-0836
    Electronic ISSN:
    1476-4687
    Topics:
    Biology
    Chemistry and Pharmacology
    Medicine
    Natural Sciences in General
    Physics
    Published by:
    Latest Papers from Table of Contents or Articles in Press
  3. 3
    Staff View
    Publication Date:
    2018-01-17
    Publisher:
    The American Society for Microbiology (ASM)
    Print ISSN:
    0270-7306
    Electronic ISSN:
    1098-5549
    Topics:
    Biology
    Medicine
    Published by:
    Latest Papers from Table of Contents or Articles in Press
  4. 4
    Staff View
    ISSN:
    1089-7550
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    In situ superconducting YBa2Cu3O7−x films with Tc0 up to 87 K and Jc, 77 K up to 6×104 A/cm2 were prepared on Si substrates with MgAl2O4 and BaTiO3 double-buffer layers. The epitaxial relations between various layers were established by transmission electron microscopy. The MgAl2O4 layer is heavily faulted. The subsequent BaTiO3 layer stops most of the faults, provides a template for the YBa2Cu3O7−x growth, and partially screens off the stress due to different thermal expansion coefficients. The microstructure of the YBa2Cu3O7−x layer is very similar to that of the films deposited directly on SrTiO3, exhibiting a homogeneous heavily faulted single-crystal-like structure free from secondary phases and grain boundaries. The slight degradation of the transport properties is attributed to residual thermal stress.
    Type of Medium:
    Electronic Resource
    URL:
    Articles: DFG German National Licenses
  5. 5
    Kuwatsuka, H. ; Mikawa, T. ; Miura, S. ; Yasuoka, N. ; Ito, M. ; Tanahashi, T. ; Wada, O.

    [S.l.] : American Institute of Physics (AIP)
    Published 1991
    Staff View
    ISSN:
    1089-7550
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    This paper discusses the impact ionization rates of holes in AlxGa1−xSb near x=0.06, where resonance impact ionization is expected. Resonance impact ionization did not occur in a range of the electric field we studied. We evaluate the impact ionization of holes at the spin-split-off band theoretically, and show that our measured result is reasonable.
    Type of Medium:
    Electronic Resource
    URL:
    Articles: DFG German National Licenses
  6. 6
    Miura, S. ; Yoshitake, T. ; Tsuge, H. ; Inui, T.

    [S.l.] : American Institute of Physics (AIP)
    Published 1994
    Staff View
    ISSN:
    1089-7550
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    Double-sided Y1Ba2Cu3Ox films are prepared on MgO(100) substrates for KrF excimer laser deposition and their electrical properties, both direct current and microwave frequencies, are examined. Double-sided Y1Ba2Cu3Ox films show zero resistivity at temperatures higher than 88 K and ρ(300K)/ρ(100 K) higher than 2.7. Using a niobium shield, a double-sided Y1Ba2Cu3Ox films microstrip line resonator at 5.7 GHz shows an unloaded Q value of 2.6×104 at 77 K and 1.1×105 at 4.2 K. These are the highest class of unloaded Q known to be reported for planar-type resonators.
    Type of Medium:
    Electronic Resource
    URL:
    Articles: DFG German National Licenses
  7. 7
    Kuwatsuka, H. ; Mikawa, T. ; Miura, S. ; Yasuoka, N. ; Kito, Y. ; Tanahashi, T. ; Wada, O.

    Woodbury, NY : American Institute of Physics (AIP)
    Published 1990
    Staff View
    ISSN:
    1077-3118
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    We measured impact ionization rates in AlxGa1−xSb at x=0.06, where the band-gap energy Eg equals the spin-orbital splitting energy Δ, in an electric field of 1.5×105–3.2×105 V/cm. By considering exact field profile in the depletion layer for each sample, the ionization rates of AlxGa1−xSb have been determined to be α=2.35×106 exp(−1.30×106/E) and β=9.02×105 exp(−9.03×105/E). Although our data have not shown the resonant enhancement of hole ionization rates described by O. Hildebrand, W. Kuebart, and M. Pilkuhn [Appl. Phys. Lett. 37, 801 (1980)], exact values of impact ionization rates have been established in practical electric fields required for designing AlxGa1−xSb avalanche photodiodes.
    Type of Medium:
    Electronic Resource
    URL:
    Articles: DFG German National Licenses
  8. 8
    Yoshitake, T. ; Miura, S. ; Fujita, J. ; Shohata, N. ; Igarashi, H. ; Satoh, T. ; Sekiguchi, A. ; Katoh, K.

    Woodbury, NY : American Institute of Physics (AIP)
    Published 1990
    Staff View
    ISSN:
    1077-3118
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    Thin films of the Bi2(Sr,Ca)3Cu2Ox and YBa2Cu3O7−δ system were annealed at 400 °C in a high-density oxygen plasma and its effect on superconducting properties was investigated. After being annealed in the oxygen plasma, their superconducting transition temperatures decreased by about 10 K and 2 K, respectively, and the c-axis lattice constants of these films were also found to decrease as a result of the annealing in the oxygen plasma. These results suggest that excessive oxygen incorporated into the films by the annealing in the oxygen plasma caused the excessive hole carriers, which deteriorated the superconducting transition temperatures of these films.
    Type of Medium:
    Electronic Resource
    URL:
    Articles: DFG German National Licenses
  9. 9
    Miura, S. ; Yoshitake, T. ; Matsubara, S. ; Miyasaka, Y. ; Shohata, N. ; Satoh, T.

    Woodbury, NY : American Institute of Physics (AIP)
    Published 1988
    Staff View
    ISSN:
    1077-3118
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    Epitaxial films of Y-Ba-Cu-O were obtained on a Si substrate, using an epitaxial intermediate layer consisting of BaTiO3(or SrTiO3)/MgAl2O4. MgAl2O4 was epitaxially grown on the Si(100) substrate by chemical vapor deposition. Then, SrTiO3 or BaTiO3 was also epitaxially grown on the MgAl2O4 layer by means of rf magnetron sputtering. Epitaxial Y-Ba-Cu-O films were prepared on BaTiO3(SrTiO3)/MgAl2O4/Si substrates by rf magnetron sputtering. Preparation of an Y-Ba-Cu-O film directly on MgAl2O4/Si was also studied, but only a randomly oriented polycrystalline film has been obtained so far. Resistive superconducting transitions with zero resistance at 65 K on SrTiO3/MgAl2O4/Si and at 70 K on BaTiO3/MgAl2O4/Si were observed.
    Type of Medium:
    Electronic Resource
    URL:
    Articles: DFG German National Licenses
  10. 10
    Satoh, T. ; Yoshitake, T. ; Miura, S. ; Fujita, J. ; Kubo, Y. ; Igarashi, H.

    Woodbury, NY : American Institute of Physics (AIP)
    Published 1989
    Staff View
    ISSN:
    1077-3118
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    Superconducting Bi-Sr-Ca-Cu-O thin films have been prepared on (100) MgO substrates at about 600 °C by coevaporation. The c-axis lattice constant of this system was controlled to the values of 24–43 A(ring) by changing film composition. Superconducting transition temperatures of these films were affected by substrate temperature and by a post-deposition annealing at a low temperature. The highest zero resistance temperature (Tc, zero) of the as-grown Bi2(Sr,Ca)3Cu2Ox film was 79 K. The best Bi2(Sr, Ca)4Cu3Ox film showed an onset temperature of 105 K and Tc, zero zero of 78 K after annealing at 400 °C for 1 h.
    Type of Medium:
    Electronic Resource
    URL:
    Articles: DFG German National Licenses
  11. 11
    Wu, X. D. ; Inam, A. ; Hegde, M. S. ; Wilkens, B. ; Chang, C. C. ; Hwang, D. M. ; Nazar, L. ; Venkatesan, T. ; Miura, S. ; Matsubara, S. ; Miyasaka, Y. ; Shohata, N.

    Woodbury, NY : American Institute of Physics (AIP)
    Published 1989
    Staff View
    ISSN:
    1077-3118
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    As-deposited superconducting thin films (∼0.1 μm) of YBa2Cu3O7−x have been prepared by pulsed laser deposition on (100) Si with buffer layers of BaTiO3/MgAl2O4. X-ray diffraction studies reveal that the films grow epitaxially with the c axis preferentially oriented normal to the substrate surface. This is confirmed by ion channeling measurements along the (100) (normal to the surface) and (110) directions of the Si substrate showing a minimum yield of 54% along the (100), and 78% along the (110) axes using 2.8 MeV He++. Preliminary transmission electron microscopy study also supports these results. The as-deposited films have zero resistance temperatures of 86–87 K, and critical current densities of 6×104 A/cm2 at 77 K and 1.2×105 A/cm2 at 73 K. Our results indicate that the superconducting properties of the films are limited primarily by the quality and degree of epitaxal growth of the buffer layers on the silicon substrate.
    Type of Medium:
    Electronic Resource
    URL:
    Articles: DFG German National Licenses
  12. 12
    Miura, S. ; Nakai, A. ; Shimakawa, Y. ; Yoshitake, T. ; Miyasaka, Y. ; Shohata, N. ; Satoh, T.

    Woodbury, NY : American Institute of Physics (AIP)
    Published 1989
    Staff View
    ISSN:
    1077-3118
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    The as-grown crystallized films of low Tc phase (Tc∼80 K) in a Bi-Sr-Ca-Cu-O system were prepared by rf magnetron sputtering and were annealed in argon or oxygen atmosphere below 500 °C. Superconducting properties and the c-axis lattice constant varied according to the annealing temperature and atmosphere. These results suggest that the oxygen content in the film is varied by low-temperature annealing and that the variation of oxygen content affects the superconducting and structural properties. By cooling the sample in the chamber in 760 Torr oxygen, the as-grown film with Tc end at 74 K was obtained.
    Type of Medium:
    Electronic Resource
    URL:
    Articles: DFG German National Licenses
  13. 13
    Miura, S. ; Mikawa, T. ; Kuwatsuka, H. ; Yasuoka, N. ; Tanahashi, T. ; Wada, O.

    Woodbury, NY : American Institute of Physics (AIP)
    Published 1989
    Staff View
    ISSN:
    1077-3118
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    An Al0.053Ga0.947Sb avalanche photodiode (APD) has been fabricated and tested. First, measurement of an excess noise factor as well as an ionization rate ratio has been demonstrated. A low excess noise factor of 3.8, which is 1.2 dB lower than the conventional GaInAs APD, has been obtained. From this excess noise factor, the effective value of the hole-to-electron ionization rate ratio (keff) has been determined as high as 5, being in good agreement with the hole-to-electron ionization rate ratio (β/α) given by the multiplication data. This keff value is the highest ever reported for long-wavelength III-V APDs.
    Type of Medium:
    Electronic Resource
    URL:
    Articles: DFG German National Licenses
  14. 14
    Miura, S. ; Yoshitake, T. ; Satoh, T. ; Miyasaka, Y. ; Shohata, N.

    Woodbury, NY : American Institute of Physics (AIP)
    Published 1988
    Staff View
    ISSN:
    1077-3118
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    Superconducting Y1Ba2Cu3O7−δ films were prepared by TEA-CO2 pulsed laser evaporation. On SrTiO3(100) the a axis was oriented perpendicular to the substrate surface, while the 〈110〉 axis was oriented perpendicular to the substrate surface on SrTiO3(110). Sharp resistive superconducting transitions with zero resistance at 86 K on SrTiO3(110) and at 83 K on SrTiO3(100) were observed.
    Type of Medium:
    Electronic Resource
    URL:
    Articles: DFG German National Licenses
  15. 15
    Miura, S. ; Yoshitake, T. ; Manako, T. ; Miyasaka, Y. ; Shohata, N. ; Satoh, T.

    Woodbury, NY : American Institute of Physics (AIP)
    Published 1989
    Staff View
    ISSN:
    1077-3118
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    As-grown crystallized Bi2Sr2Ca1Cu2Ox phase films were prepared on MgO(100) substrates by rf magnetron sputtering. The as-grown film showed the Tc onset of 92 K and the Tc end of 82 K. By annealing in the furnace at 480 °C after deposition, superconducting property and the c-axis lattice constant varied with atmosphere during annealing. The film after annealing in air at 480 °C exhibited the highest superconducting transition with the Tc onset of 93 K and the Tc end of 85 K. The Tc onset increased when the c-axis lattice constant was increased, suggesting that the Tc onset increases with decreasing the oxygen content of the film.
    Type of Medium:
    Electronic Resource
    URL:
    Articles: DFG German National Licenses
  16. 16
  17. 17
    Fujita, J. ; Yoshitake, T. ; Satoh, T. ; Miura, S. ; Tsuge, H. ; Igarashi, H.

    Woodbury, NY : American Institute of Physics (AIP)
    Published 1991
    Staff View
    ISSN:
    1077-3118
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    We report on large in-plane anisotropic transport properties observed in epitaxial Bi2(Sr,Ca)3Cu2Ox films grown on tilted (001)SrTiO3 substrate. By tilting the surface normal axis about 4° toward [111]SrTiO3, regular steps and terraces were formed on the substrate surface and perfect alignment of film b axis with incommensurate modulation along [110]SrTiO3 was realized. The film c axis was perpendicular to the (001)SrTiO3 terrace, thus the film c axis grew tilted 4° toward [111] from surface normal due to the surface inclination. In those epitaxial configurations, the in-plane resistivity along the step direction(ρ[110]) involved the contribution from the c-axis(ρc) component, and we observed the large resistivity anisotropy between a- and b- direction of the film. The transport along a axis(ρa) showed a low resistivity with metallic temperature dependence while the resistivity along the step direction(ρ[110]) was higher and semiconductive. The ratio of ρc/ρa ≈ 104 estimated in this experiment agrees well with the anisotropy observed in the bulk single crystal.
    Type of Medium:
    Electronic Resource
    URL:
    Articles: DFG German National Licenses
  18. 18
    YOKONO, S. ; OGLI, K. ; TSUKAMOTO, I. ; YOKONO, A. ; MIURA, S.

    Oxford, UK : Blackwell Publishing Ltd
    Published 1991
    Staff View
    ISSN:
    1749-6632
    Source:
    Blackwell Publishing Journal Backfiles 1879-2005
    Topics:
    Natural Sciences in General
    Type of Medium:
    Electronic Resource
    URL:
    Articles: DFG German National Licenses
  19. 19
    Matuda, S. ; Shirahama, T. ; Saheki, T. ; Miura, S. ; Mori, M.

    Amsterdam : Elsevier
    Staff View
    ISSN:
    0167-4781
    Keywords:
    (Rat heart, Rabbit reticulocyte lysate) ; Immunochemistry ; Lipoamide dehydrogenase ; Protein synthesis ; Pyruvate dehydrogenase ; Translation
    Source:
    Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics:
    Biology
    Chemistry and Pharmacology
    Medicine
    Physics
    Type of Medium:
    Electronic Resource
    URL:
    Articles: DFG German National Licenses
  20. 20
    Nakabayashi, I ; Nishiyama, J ; Ishida, A ; Moriya, H ; Tajima, O ; Ikehata, N ; Miura, S ; Kobayashi, S

    Melbourne, Australia : Blackwell Science Asia Pty. Ltd.
    Published 1999
    Staff View
    ISSN:
    1440-1797
    Source:
    Blackwell Publishing Journal Backfiles 1879-2005
    Topics:
    Medicine
    Type of Medium:
    Electronic Resource
    URL:
    Articles: DFG German National Licenses