Search Results - (Author, Cooperation:S. Gu)
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1Latest Papers from Table of Contents or Articles in PressMahar, J. E., Hall, R. N., Peacock, D., Kovaliski, J., Piper, M., Mourant, R., Huang, N., Campbell, S., Gu, X., Read, A., Urakova, N., Cox, T., Holmes, E. C., Strive, T.
The American Society for Microbiology (ASM)
Published 2018Staff ViewPublication Date: 2018-01-03Publisher: The American Society for Microbiology (ASM)Print ISSN: 0022-538XElectronic ISSN: 1098-5514Topics: MedicinePublished by: -
2Latest Papers from Table of Contents or Articles in PressB. Misof ; S. Liu ; K. Meusemann ; R. S. Peters ; A. Donath ; C. Mayer ; P. B. Frandsen ; J. Ware ; T. Flouri ; R. G. Beutel ; O. Niehuis ; M. Petersen ; F. Izquierdo-Carrasco ; T. Wappler ; J. Rust ; A. J. Aberer ; U. Aspock ; H. Aspock ; D. Bartel ; A. Blanke ; S. Berger ; A. Bohm ; T. R. Buckley ; B. Calcott ; J. Chen ; F. Friedrich ; M. Fukui ; M. Fujita ; C. Greve ; P. Grobe ; S. Gu ; Y. Huang ; L. S. Jermiin ; A. Y. Kawahara ; L. Krogmann ; M. Kubiak ; R. Lanfear ; H. Letsch ; Y. Li ; Z. Li ; J. Li ; H. Lu ; R. Machida ; Y. Mashimo ; P. Kapli ; D. D. McKenna ; G. Meng ; Y. Nakagaki ; J. L. Navarrete-Heredia ; M. Ott ; Y. Ou ; G. Pass ; L. Podsiadlowski ; H. Pohl ; B. M. von Reumont ; K. Schutte ; K. Sekiya ; S. Shimizu ; A. Slipinski ; A. Stamatakis ; W. Song ; X. Su ; N. U. Szucsich ; M. Tan ; X. Tan ; M. Tang ; J. Tang ; G. Timelthaler ; S. Tomizuka ; M. Trautwein ; X. Tong ; T. Uchifune ; M. G. Walzl ; B. M. Wiegmann ; J. Wilbrandt ; B. Wipfler ; T. K. Wong ; Q. Wu ; G. Wu ; Y. Xie ; S. Yang ; Q. Yang ; D. K. Yeates ; K. Yoshizawa ; Q. Zhang ; R. Zhang ; W. Zhang ; Y. Zhang ; J. Zhao ; C. Zhou ; L. Zhou ; T. Ziesmann ; S. Zou ; X. Xu ; H. Yang ; J. Wang ; K. M. Kjer ; X. Zhou
American Association for the Advancement of Science (AAAS)
Published 2014Staff ViewPublication Date: 2014-11-08Publisher: American Association for the Advancement of Science (AAAS)Print ISSN: 0036-8075Electronic ISSN: 1095-9203Topics: BiologyChemistry and PharmacologyComputer ScienceMedicineNatural Sciences in GeneralPhysicsKeywords: Animals ; Genetic Code ; Genome, Insect ; Genomics ; Insect Proteins/*classification/genetics ; Insects/*classification/genetics ; *Phylogeny ; Time FactorsPublished by: -
3Latest Papers from Table of Contents or Articles in PressK. Lee ; X. Zhong ; S. Gu ; A. M. Kruel ; M. B. Dorner ; K. Perry ; A. Rummel ; M. Dong ; R. Jin
American Association for the Advancement of Science (AAAS)
Published 2014Staff ViewPublication Date: 2014-06-21Publisher: American Association for the Advancement of Science (AAAS)Print ISSN: 0036-8075Electronic ISSN: 1095-9203Topics: BiologyChemistry and PharmacologyComputer ScienceMedicineNatural Sciences in GeneralPhysicsKeywords: Animals ; Botulinum Toxins, Type A/*chemistry/genetics ; Cadherins/*chemistry/genetics ; Crystallography, X-Ray ; Gene Knockdown Techniques ; HT29 Cells ; Hemagglutinins/*chemistry/genetics ; Humans ; Mice ; Protein Structure, Secondary ; Recombinant Proteins/chemistryPublished by: -
4Latest Papers from Table of Contents or Articles in PressCao, Z., Zeng, S., Xu, Z., Arvanitis, A., Yang, S., Gu, X., Dong, J.
American Association for the Advancement of Science (AAAS)
Published 2018Staff ViewPublication Date: 2018-11-24Publisher: American Association for the Advancement of Science (AAAS)Electronic ISSN: 2375-2548Topics: Natural Sciences in GeneralPublished by: -
5Latest Papers from Table of Contents or Articles in PressS. Gu ; S. Rumpel ; J. Zhou ; J. Strotmeier ; H. Bigalke ; K. Perry ; C. B. Shoemaker ; A. Rummel ; R. Jin
American Association for the Advancement of Science (AAAS)
Published 2012Staff ViewPublication Date: 2012-03-01Publisher: American Association for the Advancement of Science (AAAS)Print ISSN: 0036-8075Electronic ISSN: 1095-9203Topics: BiologyChemistry and PharmacologyComputer ScienceMedicineNatural Sciences in GeneralPhysicsKeywords: Amino Acid Sequence ; Bacterial Proteins/*chemistry/metabolism ; Binding Sites ; Botulinum Toxins, Type A/*chemistry/metabolism ; Crystallography, X-Ray ; Hydrogen-Ion Concentration ; Models, Molecular ; Molecular Sequence Data ; Multiprotein Complexes/chemistry/metabolism ; Mutagenesis ; Protein Binding ; Protein Conformation ; Protein Interaction Domains and Motifs ; Protein Structure, SecondaryPublished by: -
6Latest Papers from Table of Contents or Articles in PressS. Rosebeck ; L. Madden ; X. Jin ; S. Gu ; I. J. Apel ; A. Appert ; R. A. Hamoudi ; H. Noels ; X. Sagaert ; P. Van Loo ; M. Baens ; M. Q. Du ; P. C. Lucas ; L. M. McAllister-Lucas
American Association for the Advancement of Science (AAAS)
Published 2011Staff ViewPublication Date: 2011-01-29Publisher: American Association for the Advancement of Science (AAAS)Print ISSN: 0036-8075Electronic ISSN: 1095-9203Topics: BiologyChemistry and PharmacologyComputer ScienceMedicineNatural Sciences in GeneralPhysicsKeywords: Apoptosis ; B-Lymphocytes/*metabolism ; Cell Adhesion ; Cell Line ; Cell Line, Tumor ; Gene Expression Regulation, Neoplastic ; Humans ; I-kappa B Kinase/metabolism ; Lymphoma, B-Cell, Marginal Zone/genetics/*metabolism ; NF-kappa B/*metabolism ; NF-kappa B p52 Subunit/metabolism ; Oncogene Proteins, Fusion/chemistry/genetics/*metabolism ; Phosphorylation ; Protein Structure, Tertiary ; Protein-Serine-Threonine Kinases/genetics/*metabolism ; Proto-Oncogene Proteins/genetics/metabolism ; Signal Transduction ; Substrate SpecificityPublished by: -
7Latest Papers from Table of Contents or Articles in PressWang, D., Liu, S., Warrell, J., Won, H., Shi, X., Navarro, F. C. P., Clarke, D., Gu, M., Emani, P., Yang, Y. T., Xu, M., Gandal, M. J., Lou, S., Zhang, J., Park, J. J., Yan, C., Rhie, S. K., Manakongtreecheep, K., Zhou, H., Nathan, A., Peters, M., Mattei, E., Fitzgerald, D., Brunetti, T., Moore, J., Jiang, Y., Girdhar, K., Hoffman, G. E., Kalayci, S., Gümüs, Z. H., Crawford, G. E., Psych; ENCODE Consortium, Roussos, P., Akbarian, S., Jaffe, A. E., White, K. P., Weng, Z., Sestan, N., Geschwind, D. H., Knowles, J. A., Gerstein, M. B.
American Association for the Advancement of Science (AAAS)
Published 2018Staff ViewPublication Date: 2018-12-14Publisher: American Association for the Advancement of Science (AAAS)Print ISSN: 0036-8075Electronic ISSN: 1095-9203Topics: BiologyChemistry and PharmacologyGeosciencesComputer ScienceMedicineNatural Sciences in GeneralPhysicsKeywords: Genetics, Neuroscience, Online OnlyPublished by: -
8Latest Papers from Table of Contents or Articles in PressShen, C., Iskenderian, A., Lundberg, D., He, T., Palmieri, K., Crooker, R., Deng, Q., Traylor, M., Gu, S., Rong, H., Ehmann, D., Pescatore, B., Strack-Logue, B., Romashko, A., Baviello, G., Gill, J., Zhang, B., Meiyappan, M., Pan, C., Norton, A. W.
The American Society for Pharmacology and Experimental Therapeutics
Published 2018Staff ViewPublication Date: 2018-07-01Publisher: The American Society for Pharmacology and Experimental TherapeuticsPrint ISSN: 0022-3565Electronic ISSN: 1521-0103Topics: MedicinePublished by: -
9Latest Papers from Table of Contents or Articles in PressStaff View
Publication Date: 2018-10-30Publisher: The Company of BiologistsPrint ISSN: 0950-1991Electronic ISSN: 1477-9129Topics: BiologyKeywords: Chromatin & epigeneticsPublished by: -
10Articles: DFG German National LicensesWang, C. H. ; Gu, S. H. ; Guan, H. W.
College Park, Md. : American Institute of Physics (AIP)
Published 1993Staff ViewISSN: 1089-7690Source: AIP Digital ArchiveTopics: PhysicsChemistry and PharmacologyNotes: The dependence of the second harmonic generation (SHG) signal of an amorphous polymer system containing nonlinear optical (NLO) chromophores on the polarizing electric field is investigated. It is shown that under a weak poling field condition, the SHG intensity is proportional to Ep2, provided that the polarizing electric field Ep is greater than a threshold field Es. Above Es, the macroscopic polar orientational order is established. The lengthening of the relaxation time for polar orientational order with increasing Ep is also observed. Theoretical analysis shows that the relaxation time is proportional to the polar order initially induced by the polarizing field. Experiments have been carried out to confirm the theoretical prediction.Type of Medium: Electronic ResourceURL: -
11Articles: DFG German National LicensesTurnbull, D. A. ; Gu, S. Q. ; Bishop, S. G.
[S.l.] : American Institute of Physics (AIP)
Published 1996Staff ViewISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: Photoluminescence (PL) and photoluminescence excitation (PLE) spectroscopy of Dy2S3-doped As12Ge33Se55 glasses demonstrate that the broad, below-gap PLE mechanism observed previously for rare-earth emissions in Er- and Pr-doped chalcogenide glasses is a general or universal feature of rare-earth-doped chalcogenide glasses, provided the transition energies of the rare earths are in the correct energy range. The PL spectrum excited in the 815 nm Dy3+ absorption band shows the 1150, 1340, and 1700 nm sequence of Dy3+ transitions expected for Dy-doped chalcogenide glasses. The PLE spectra of the 1340 (6F11/2,6H9/2→6H15/2) and 1700 nm (6H11/2→6H15/2) Dy3+ emissions exhibit broad excitation bands from ∼500 to 1000 nm, upon which the sharp intra F-band absorptions of Dy3+ are superimposed. These broad PLE bands are characterized by an exponentially decreasing slope with decreasing energy in the spectral range below the Urbach edge which is associated with the below-gap, defect- and impurity-induced exponential tails observed in the below-gap absorption spectra of chalcogenide glasses. At high energy, the exponentially rising Urbach absorption edge of the host glass, which leads to competing nonradiative decay mechanisms, eventually dominates the absorption spectrum and imposes an exponentially decreasing slope on the PLE spectra. These features of the broadband PLE have been observed in the PLE spectra of the Er-, Pr- and Dy-doped chalcogenide glasses we have studied. There is a difference in the relative strengths of the broad PLE bands, with the broadband for the 1340 nm PL band being a factor of 3 stronger than that for the 1700 nm PL emission. In addition, there is a shift in the peak energy of the different PLE spectra. Qualitatively speaking, the higher the energy of the luminescence transition, the higher the energy of the corresponding broad PLE peak. Proposed mechanisms for the broadband PLE of rare-earth emissions in chalcogenide glasses are discussed in the context of models for the below-gap, defect- and impurity-induced exponential absorption tails, including the possible role of lattice relaxation associated with charge transfer transitions and the involvement of transition metal impurities. © 1996 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
12Articles: DFG German National LicensesGu, S. Q. ; Ramachandran, S. ; Reuter, E. E. ; Turnbull, D. A. ; Verdeyen, J. T. ; Bishop, S. G.
[S.l.] : American Institute of Physics (AIP)
Published 1995Staff ViewISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: Photoluminescence (PL) and photoluminescence excitation (PLE) spectroscopy carried out on bulk samples of Er:As2S3 glasses demonstrate that Er3+ is incorporated in optically active sites in the glass and gives rise to a broad ∼1500–1600 nm, 4I13/2→4I15/2 emission spectrum similar to those observed in Er-doped oxide glasses. In addition to the expected 980 nm (4I15/2→4I11/2) Er3+ PLE band, the 1500–1600 nm Er3+ PL band in the glass exhibits a remarkably broad PLE spectrum which extends from the As2S3 Urbach absorption edge at ∼550 nm to beyond 1000 nm. This broad PLE band corresponds closely to an exponential PLE band observed in the "band tail'' spectral range for Er-doped Ge33As12Se55 glasses. These unusual PLE spectra indicate that in Er-doped chalcogenide glasses there is an additional broad-band, below gap, extrinsic absorption mechanism which efficiently excites the characteristic 1550 nm, 4I13/2→4I15/2 Er3+ emission band. It is not possible to determine at present whether the Er dopants themselves are responsible for the broad band absorption which excites the Er3+ PL bands, or if photoexcited carriers attributable to absorption by other impurities transfer their energy to the excited states of the Er3+ 4f shells. Microscopic characterization techniques reveal that the Er2S3-doped glasses also contain residual Er2S3 crystallites which give rise to sharp, narrow line 1550, 980, and 810 nm Er3+ optical spectra characteristic of polycrystalline Er2S3. The temperature dependence of the Er2S3 PL and PLE spectra enables the energy levels of the 4I13/2 excited state and 4I15/2 ground state manifolds to be determined. © 1995 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
13Articles: DFG German National LicensesGu, S. Q. ; Liu, X. ; Covington, M. ; Reuter, E. ; Chang, H. ; Panepucci, R. ; Adesida, I. ; Bishop, S. G. ; Caneau, C. ; Bhat, R.
[S.l.] : American Institute of Physics (AIP)
Published 1994Staff ViewISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: InGaAs/InP quantum wires with widths ranging from 200 to 40 nm have been fabricated using high-resolution electron-beam lithography and CH4/H2 reactive-ion etching. The excitation intensity dependence of the photoluminescence (PL) energies and line shapes for relatively wide wires (∼100 nm) exhibits the effects of band filling in k space and band-gap renormalization due to many-body effects in dense electron-hole plasmas (EHP). In the narrowest wires studied (∼40 nm), the effects of sidewall surface recombination limit the attainable EHP density. In addition, the results show a blue shift of PL energies when wire width decreases below 100 nm.Type of Medium: Electronic ResourceURL: -
14Articles: DFG German National LicensesLi, X. ; Gu, S. Q. ; Reuter, E. E. ; Verdeyen, J. T. ; Bishop, S. G. ; Coleman, J. J.
[S.l.] : American Institute of Physics (AIP)
Published 1996Staff ViewISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: A GaN p-n junction structure was grown on a (0001) sapphire substrate by atmospheric pressure metalorganic chemical vapor deposition using a double buffer layer. The resulting light emitting diode (LED) was further exposed to a low-energy electron beam source. The effect of e-beam exposure on the room-temperature electroluminescence spectra of the LED is reported. It is found that the electroluminescence spectral features change dramatically as a function of the electron-beam exposure time and current density. This is attributed to changes in active Mg concentration. The origin of each electroluminescence band is discussed. © 1996 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
15Articles: DFG German National LicensesTurnbull, D. A. ; Li, X. ; Gu, S. Q. ; Reuter, E. E. ; Coleman, J. J. ; Bishop, S. G.
[S.l.] : American Institute of Physics (AIP)
Published 1996Staff ViewISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: A detailed study of the luminescence properties of GaN layers grown by metalorganic chemical vapor deposition on sapphire substrates with GaN/AlN double buffer layers or GaN single buffer layers was carried out with photoluminescence and cathodoluminescence (CL) spectroscopy. It was discovered that the use of the double buffer layer resulted in an improved surface morphology, but also increased the strain in the samples relative to samples grown on single GaN buffer layers. Free exciton (A exciton), neutral donor-bound exciton, and acceptor-bound exciton photoluminescence peaks were observed for GaN films grown on GaN, AlN, and GaN/AlN buffer layers. Acceptor free-to-bound luminescence was also observed and the thermal activation energy of the acceptors was measured. From these data we are able to determine the acceptor binding energy, EA, to be 231.5 meV and the donor binding energy ED to be 29.5 meV. An exciton peak, the acceptor free-to-bound luminescence, and an unidentified lower energy peak were observed with CL. CL imaging also allowed us to correlate luminescence with surface features of the films. e-beam annealing of both n-type and p-type films was investigated. © 1996 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
16Articles: DFG German National LicensesGu, S. Q. ; Ramachandran, S. ; Reuter, E. E. ; Turnbull, D. A. ; Verdeyen, J. T. ; Bishop, S. G.
Woodbury, NY : American Institute of Physics (AIP)
Published 1995Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: Photoluminescence (PL) and photoluminescence excitation (PLE) spectroscopy carried out on bulk samples of Er2S3-doped Ge33As12Se55 glasses demonstrate that Er3+ is incorporated in optically active sites in the glass and gives rise to a broad ∼1500–1600 nm 4I13/2→4I15/2 PL spectrum similar to those observed in Er-doped oxide glasses. The novel PLE spectrum of the 1550 nm Er3+PL band comprises a superposition of relatively sharp peaks which are attributable to the characteristic 4I15/2→4I11/2 and 4I15/2→4I9/2 Er3+ absorption transitions at 810 and 980 nm, respectively, and a broad, below-gap PLE band characteristic of the weak defect or impurity absorption tails in chalcogenide glasses which decrease exponentially with decreasing photon energy. At high energy the exponentially rising Urbach absorption edge, which leads to competing nonradiative decay mechanisms, imposes an exponentially decreasing slope on the PLE spectrum. © 1995 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
17Articles: DFG German National LicensesLiu, J. L. ; Shi, Y. ; Wang, F. ; Lu, Y. ; Gu, S. L. ; Zhang, R. ; Zheng, Y. D.
Woodbury, NY : American Institute of Physics (AIP)
Published 1996Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: Silicon nanostructures along [011] direction with upside down triangle cross sections on the top of the sawtooth structure with (111) facets are prepared by using the lithography technique, reactive ion etching, and anisotropic wet chemical etching. These triangle-shaped silicon nanostructures are thermally oxidized in dry oxygen over a range of temperature from 850 to 1000 °C, which is characterized by scanning electron microscopy. The self-limiting oxidation phenomenon observed in silicon nanostructures is discussed. Cross-sectional shape change of the silicon nanostructure under different oxidation temperatures is demonstrated. A silicon quantum wire is successfully fabricated by two-step thermal oxidation of the silicon nanostructures. © 1996 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
18Articles: DFG German National LicensesOsowski, M. L. ; Panepucci, R. ; Turnbull, D. A. ; Gu, S. Q. ; Jones, A. M. ; Bishop, S. G. ; Adesida, I. ; Coleman, J. J.
Woodbury, NY : American Institute of Physics (AIP)
Published 1996Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: We present an experimental characterization of InGaAs–GaAs quantum wire arrays grown by selective-area metalorganic chemical vapor deposition (MOCVD). The wire patterns studied were obtained by high-resolution electron-beam lithography on poly(methylmethacrylate) and wet etching of silicon dioxide. We observe a large nonlinear enhancement of growth inside the wire region. In addition, the results of gas phase diffusion growth simulations on the expected inhomogeneity of the fabricated quantum wires are presented. The degree of inhomogeneity of fabricated quantum wire arrays was studied by spatially resolved photoluminescence. Our results show that a suitable patterning technique, coupled with proper growth conditions, could allow control of the selective growth profile across the wire array. © 1996 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
19Articles: DFG German National LicensesLiu, J. L. ; Shi, Y. ; Wang, F. ; Lu, Y. ; Zhang, R. ; Han, P. ; Gu, S. L. ; Zheng, Y. D.
Woodbury, NY : American Institute of Physics (AIP)
Published 1996Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: A method for fabricating silicon quantum wires with SiO2 boundaries is presented. It is accomplished by first growing Si/SiGe/Si heterostructure on silicon substrate with very low-pressure chemical vapor deposition, followed by lithography and reactive ion etching to form trench structures. Finally, the selective chemical etching of SiGe over silicon and subsequent thermal oxidation are carried out to generate expected silicon quantum wires. The result observed is demonstrated using scanning electron microscopy. Furthermore, the thermal oxidation characteristics of the silicon wires are investigated. The present method provides a well-controllable way to fabricate silicon quantum wires and is fully compatible with silicon microelectronic technology. © 1996 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
20Articles: DFG German National LicensesLi, W. P. ; Zhang, R. ; Zhou, Y. G. ; Yin, J. ; Bu, H. M. ; Luo, Z. Y. ; Shen, B. ; Shi, Y. ; Jiang, R. L. ; Gu, S. L. ; Liu, Z. G. ; Zheng, Y. D.
Woodbury, NY : American Institute of Physics (AIP)
Published 1999Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: A GaN-based metal–insulator–semiconductor (MIS) structure has been fabricated by using ferroelectric Pb(Zr0.53Ti0.47)O3 instead of conventional oxides as insulator gate. Because of the polarization field provided by ferroelectric and the high dielectric constant of ferroelectric insulator, the capacitance–voltage characteristics of GaN-based metal–ferroelectric–semiconductor (MFS) structures are markedly improved compared to those of other previously studied GaN MIS structures. The GaN active layer in MFS structures can reach inversion just under the bias of smaller than 5 V, which is the generally applied voltage used in semiconductor-based integrated circuits. The surface carrier concentration of the GaN layer in the MFS structure is decreased by one order compared with the background carrier concentration. The GaN MFS structures look promising for the practical application of GaN-based field effect transistors. © 1999 American Institute of Physics.Type of Medium: Electronic ResourceURL: