Search Results - (Author, Cooperation:R. Triboulet)
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1Latest Papers from Table of Contents or Articles in PressH. M. Chang ; R. Triboulet ; J. E. Thornton ; R. I. Gregory
Nature Publishing Group (NPG)
Published 2013Staff ViewPublication Date: 2013-04-19Publisher: Nature Publishing Group (NPG)Print ISSN: 0028-0836Electronic ISSN: 1476-4687Topics: BiologyChemistry and PharmacologyMedicineNatural Sciences in GeneralPhysicsKeywords: Animals ; Cells, Cultured ; Embryonic Stem Cells/metabolism ; Exonucleases/*metabolism ; Exoribonucleases/*metabolism ; Fetal Macrosomia/*enzymology/*genetics/metabolism ; HEK293 Cells ; Humans ; Mice ; MicroRNAs/genetics/*metabolism ; RNA Precursors/genetics/metabolism ; RNA Processing, Post-Transcriptional ; *RNA Stability ; RNA-Binding Proteins/*metabolism ; Ribonucleases/*metabolism ; Substrate Specificity ; Uridine Monophosphate/analogs & derivatives/metabolism ; Wilms Tumor/*enzymology/etiology/*genetics/metabolismPublished by: -
2Articles: DFG German National LicensesAzema, A. ; Gaucherel, P. ; Roustan, J. C. ; Granger, R. ; Triboulet, R.
[S.l.] : American Institute of Physics (AIP)
Published 1990Staff ViewISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: Infrared waveguides have been made by isothermal evaporation diffusion of HgTe on a ZnTe substrate and characterized at 10.6 μm by m-lines analysis. Refractive index profiles deduced from this analysis are correlated to the composition ones measured with a microprobe. As a result, we obtain the refractive index of the alloy as a function of the zinc concentration ranging from 0.2 to 1. Direct measurement of the substrate refractive index gives a value 2.60 to 2.65, results in slight disagreement with the previous data.Type of Medium: Electronic ResourceURL: -
3Articles: DFG German National LicensesHaïdar, R. ; Mustelier, A. ; Kupecek, Ph. ; Rosencher, E. ; Triboulet, R. ; Lemasson, Ph. ; Mennerat, G.
[S.l.] : American Institute of Physics (AIP)
Published 2002Staff ViewISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsType of Medium: Electronic ResourceURL: -
4Articles: DFG German National LicensesHaïdar, R. ; Mustelier, A. ; Kupecek, Ph. ; Rosencher, E. ; Triboulet, R. ; Lemasson, Ph. ; Mennerat, G.
[S.l.] : American Institute of Physics (AIP)
Published 2002Staff ViewISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: Largely tunable midinfrared (8–12 μm) generation is obtained in GaAs and ZnSe slabs by difference frequency mixing of optical parametric oscillator output waves (∼2 μm). The coherence lengths determined in semiconductor wedges are in excellent agreement with estimates from known Sellmeir formulas. © 2002 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
5Articles: DFG German National LicensesAustin, J. C. ; Hughes, Wm. C. ; Patnaik, B. K. ; Triboulet, R. ; Swanson, M. L.
[S.l.] : American Institute of Physics (AIP)
Published 1999Staff ViewISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: The interaction of vacancies with 111In atoms is studied in Hg1−xCdxTe compounds via perturbed-angular correlation (PAC) experiments, for x=0.065, 0.21, 0.44, and 0.95. In the low-x (Hg-rich) compounds, Hg vacancies are created by heating in vacuum. For the x=0.21 alloy, we have previously shown that InC-vacC pairs (A centers consisting of an In atom on a cation site and a vacancy at a neighboring cation site) are abundant after quenching from elevated temperatures. These defects are characterized by two PAC signals with quadrupole interaction frequencies νQ1=83 MHz and νQ2=92 MHz, and asymmetry parameters η1=η2=0.08. For the x=0.065–0.44 alloys, the data presented in this article show that the fractions f1 and f2 of In atoms associated with these two frequencies vary with x according to whether one or two Hg atoms are nearest neighbors to the Te atom that is bound to the In atom and the vacancy. The data are explained by the polarizable point-ion model. For the x=0.95 compound, PAC signals are observed only when stable In is added to the compound, indicating that the presence of In creates vacancies, and that self-compensation via A centers is dominant. In this case, the well-known frequencies νQ4=100 MHz and νQ5=112 MHz are seen for samples quenched from several different temperatures between 325 and 525 °C, or slow cooled from 475 °C or below. In contrast, for a sample slowly cooled from 525 °C, the frequency νQ6=60 MHz was dominant. This signal could be due to InC−vacC pairs in which the vacancy is singly charged, or to In-group I pairs. We attribute the frequencies νQ4=100 MHz and νQ5=112 MHz, like νQ1 and νQ2, to InC-vacC pairs having doubly charged vacancies. © 1999 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
6Articles: DFG German National LicensesTournié, E. ; Morhain, C. ; Neu, G. ; Laügt, M. ; Ongaretto, C. ; Faurie, J.-P. ; Triboulet, R. ; Ndap, J. O.
[S.l.] : American Institute of Physics (AIP)
Published 1996Staff ViewISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: We investigate by high-resolution x-ray diffraction (HRXRD), temperature-dependent photoluminescence (PL) and reflectivity spectroscopies, and low-temperature selective-photoluminescence spectroscopy ZnSe single crystals grown by solid-phase recrystallization. HRXRD reveals the high structural perfection of the samples which exhibit rocking-curve linewidths in the 15–20 arcsec range. The low-temperature PL spectra are dominated by the so-called Ideep1 excitonic line, a neutral-acceptor bound-exciton line I1, the free-exciton emission FX, and the n=2 excited state of FX. We identify the main residual impurities to be Li acceptors. Donor–acceptor pair bands are very hardly detected at low temperature which indicates a low donor content. A major characteristics of these samples is the quasi-absence of any Cu-related deep emission which generally plagues the PL spectra of bulk ZnSe. Consequently, Ideep1 is ascribed to Zn-vacancy–donor complexes. Finally, from the temperature dependence of the PL emission and reflectivity, the band-gap energy of bulk ZnSe is found to linearly shrink with the temperature above 80 K at a rate of −4.3×10−4 eV K−1. The room-temperature gap is estimated to 2720±2 meV. Our results indicate that solid-phase recrystallization produces ZnSe samples with the highest structural quality and purity achievable at present time. © 1996 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
7Articles: DFG German National LicensesTournié, E. ; Brunet, P. ; Faurie, J.-P. ; Triboulet, R. ; Ndap, J. O.
Woodbury, NY : American Institute of Physics (AIP)
Published 1996Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: We study through reflection high-energy electron diffraction (RHEED) and low-temperature photoluminescence (PL) spectroscopy the molecular-beam epitaxy of ZnSe homoepitaxial layers on solid-phase recrystallized substrates. We show that with a proper ex situ substrate polishing a two-dimensional (2D) RHEED pattern is readily observed when introducing the substrate into the growth chamber at low temperature. We demonstrate that the in situ pre-growth treatment has a dramatic influence on ZnSe nucleation and that a suitable preparation leads to direct 2D growth of ZnSe layers which exhibit superior optical properties. The PL spectra are dominated by the near-band edge emission, with no deep-level and defect-related lines. © 1996 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
8Articles: DFG German National LicensesTournié, E. ; Morhain, C. ; Neu, G. ; Faurie, J.-P. ; Triboulet, R. ; Ndap, J. O.
Woodbury, NY : American Institute of Physics (AIP)
Published 1996Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: We investigate through low-temperature photoluminescence (PL) and selective photoluminescence (SPL) spectroscopies, ZnSe single crystals grown by solid-phase recrystallization. The PL spectra are dominated by the so-called I1deep excitonic line, a neutral–acceptor bound–exciton line I1, the free-exciton emission FX, and the n=2 excited state of FX. We identify the main residual impurities. Donor–acceptor pair bands are hardly detected. A major characteristic of these samples is the quasiabsence of any Cu-related deep emission which generally plagues the PL spectra of bulk ZnSe. Consequently, I1deep is ascribed to an exciton bound to Zn-vacancies related acceptors. Our results indicate that these ZnSe samples are of high quality and that solid-phase recrystallization is a promising technique to prepare ZnSe epitaxial substrates. © 1996 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
9Articles: DFG German National LicensesZenia, F. ; Lévy-Clément, C. ; Triboulet, R.
Woodbury, NY : American Institute of Physics (AIP)
Published 1999Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: We report the results of electrochemical etching on ZnTe crystals using the acidic etchant HNO3:HCl:H2O. Under optimized conditions we are able to etch several micrometer deep patterns into 〈111〉 and 〈110〉 surfaces. A comparison between etched and polished crystals shows that a surface enlargement of approximately 50 times can be obtained. The etched surfaces have strongly reduced optical reflectance, high photoluminescence efficiency, and excellent photosensitivity. Needlelike structures can be prepared, which exhibit a blueshift of the excitonic transition energies, indicating that parts of the etch pattern are in the quantum confinement regime. © 1999 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
10Articles: DFG German National LicensesLevy-Clement, C. ; Triboulet, R. ; Rioux, J. ; Etcheberry, A. ; Licht, S. ; Tenne, R.
[S.l.] : American Institute of Physics (AIP)
Published 1985Staff ViewISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: High-quality Cd(Se,Te) in two compositions were synthesized using the modified Bridgman technique. The Se-rich crystals had the hexagonal structure while the Te-rich phase consisted of crystals with cubic packing. Their quality could be gauged from the high-electron mobility and their low resistivity which suited the purpose of their synthesis, i.e., for high-efficiency photoelectrochemical cells. Photoelectrochemical etching was employed, which resulted in a heavily pitted surface with the density of the etch pits exceeding 109 cm−2. Quantum efficiency of the semiconductor/aqueous polysulfide interface increased considerably after photoetching. Solar to electrical conversion efficiencies in excess of 12% were obtained. Photoluminescence spectrum was measured for the two crystals prior to and after photoetching. The emission maximum is near the calculated band gap. The decline in the luminescence intensity, after photoetching, is attributed to the corrugation of the surface and the reduced density of the donor state near the semiconductor surface, which increases the thickness of the space-charge layer (dead layer model).Type of Medium: Electronic ResourceURL: -
11Articles: DFG German National LicensesStaff View
ISSN: 0960-8974Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002Topics: GeosciencesMechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision MechanicsPhysicsType of Medium: Electronic ResourceURL: -
12Articles: DFG German National LicensesStaff View
ISSN: 0022-3697Keywords: Bismuth telluride ; figure of merit ; stoichiometric deviations ; thermoelectric propertiesSource: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002Topics: Chemistry and PharmacologyPhysicsType of Medium: Electronic ResourceURL: -
13Articles: DFG German National LicensesStaff View
ISSN: 0022-3697Keywords: Bismuth telluride ; figure of merit ; stoichiometric deviations ; thermoelectric propertiesSource: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002Topics: Chemistry and PharmacologyPhysicsType of Medium: Electronic ResourceURL: -
14Articles: DFG German National LicensesStaff View
ISSN: 0022-3697Keywords: Bismuth telluride ; Hall factor ; Lorenz number ; effective mass ; mixed-scattering model ; relaxation time ; stoichiometric deviationsSource: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002Topics: Chemistry and PharmacologyPhysicsType of Medium: Electronic ResourceURL: -
15Articles: DFG German National LicensesStaff View
ISSN: 0022-3697Keywords: Atomic thermal motion ; X-ray diffraction ; atomic displacements ; pseudo-binary compounds ; static disorderSource: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002Topics: Chemistry and PharmacologyPhysicsType of Medium: Electronic ResourceURL: -
16Articles: DFG German National LicensesMarbeuf, A. ; Ballutaud, D. ; Triboulet, R. ; Dexpert, H. ; Lagarde, P. ; Marfaing, Y.
Amsterdam : ElsevierStaff ViewISSN: 0022-3697Keywords: EXAFS ; Semiconductors ; XPS ; mercury-zinc tellurideSource: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002Topics: Chemistry and PharmacologyPhysicsType of Medium: Electronic ResourceURL: -
17Articles: DFG German National LicensesStaff View
ISSN: 0022-3697Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002Topics: Chemistry and PharmacologyPhysicsType of Medium: Electronic ResourceURL: -
18Articles: DFG German National LicensesStaff View
ISSN: 0022-3697Keywords: CdTe ; energy levels ; impurity ; indium compensationSource: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002Topics: Chemistry and PharmacologyPhysicsType of Medium: Electronic ResourceURL: -
19Articles: DFG German National LicensesStaff View
ISSN: 0022-3697Keywords: Bismuth telluride ; Hall factor ; Lorenz number ; effective mass ; mixed-scattering model ; relaxation time ; stoichiometric deviationsSource: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002Topics: Chemistry and PharmacologyPhysicsType of Medium: Electronic ResourceURL: -
20Articles: DFG German National LicensesStaff View
ISSN: 0022-0248Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002Topics: Chemistry and PharmacologyGeosciencesPhysicsType of Medium: Electronic ResourceURL: