Search Results - (Author, Cooperation:R. M. Ribeiro)
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1L. Britnell ; R. M. Ribeiro ; A. Eckmann ; R. Jalil ; B. D. Belle ; A. Mishchenko ; Y. J. Kim ; R. V. Gorbachev ; T. Georgiou ; S. V. Morozov ; A. N. Grigorenko ; A. K. Geim ; C. Casiraghi ; A. H. Castro Neto ; K. S. Novoselov
American Association for the Advancement of Science (AAAS)
Published 2013Staff ViewPublication Date: 2013-05-04Publisher: American Association for the Advancement of Science (AAAS)Print ISSN: 0036-8075Electronic ISSN: 1095-9203Topics: BiologyChemistry and PharmacologyComputer ScienceMedicineNatural Sciences in GeneralPhysicsPublished by: -
2Policicchio, B. B., Cardozo, E. F., Sette, P., Xu, C., Haret-Richter, G., Dunsmore, T., Apetrei, C., Pandrea, I., Ribeiro, R. M.
The American Society for Microbiology (ASM)
Published 2018Staff ViewPublication Date: 2018-06-14Publisher: The American Society for Microbiology (ASM)Print ISSN: 0022-538XElectronic ISSN: 1098-5514Topics: MedicinePublished by: -
3Ribeiro, R. M. ; Margulis, W. ; Leite, C. A. F. ; Guedes, I. ; Misoguti, L. ; Bagnato, V. S.
Woodbury, NY : American Institute of Physics (AIP)
Published 1995Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: The transient grating technique was used to study the optical properties of hydrogenated amorphous silicon films. A carrier lifetime τe=3.3 μs, a diffusion coefficient D=4.4×10−2 cm2/s, and effective third order nonlinear susceptibility χ(3)=(5.1±1.0)×10−7 esu were measured for λpump=532 nm. The electronic and thermal contributions of the grating were estimated by diffracting a continuous wave HeNe laser beam. For intensities 1.4–4.1 mW/cm2, ∼68% of the response at 633 nm is of electronic origin. A slowly rising diffraction component was also observed. © 1995 American Institute of Physics.Type of Medium: Electronic ResourceURL: