Search Results - (Author, Cooperation:R. Jansen)
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1Q. Wu, B. S. Hu, F. R. Xu, Y. Z. Ma, S. J. Dai, Z. H. Sun, and G. R. Jansen
American Physical Society (APS)
Published 2018Staff ViewPublication Date: 2018-05-04Publisher: American Physical Society (APS)Print ISSN: 0556-2813Electronic ISSN: 1089-490XTopics: PhysicsKeywords: Nuclear StructurePublished by: -
2Schrader, A. M. R., Jansen, P. M., Willemze, R., Vermeer, M. H., Cleton-Jansen, A.-M., Somers, S. F., Veelken, H., van Eijk, R., Kraan, W., Kersten, M. J., van den Brand, M., Stevens, W. B. C., de Jong, D., Abdul Hamid, M., Tanis, B. C., Posthuma, E. F. M., Nijland, M., Diepstra, A., Pals, S. T., Cleven, A. H. G., Vermaat, J. S. P.
American Society of Hematology (ASH)
Published 2018Staff ViewPublication Date: 2018-05-04Publisher: American Society of Hematology (ASH)Print ISSN: 0006-4971Electronic ISSN: 1528-0020Topics: BiologyMedicineKeywords: Lymphoid NeoplasiaPublished by: -
3E. F. Dumitrescu, A. J. McCaskey, G. Hagen, G. R. Jansen, T. D. Morris, T. Papenbrock, R. C. Pooser, D. J. Dean, and P. Lougovski
American Physical Society (APS)
Published 2018Staff ViewPublication Date: 2018-05-24Publisher: American Physical Society (APS)Print ISSN: 0031-9007Electronic ISSN: 1079-7114Topics: PhysicsKeywords: General Physics: Statistical and Quantum Mechanics, Quantum Information, etc.Published by: -
4T. D. Morris, J. Simonis, S. R. Stroberg, C. Stumpf, G. Hagen, J. D. Holt, G. R. Jansen, T. Papenbrock, R. Roth, and A. Schwenk
American Physical Society (APS)
Published 2018Staff ViewPublication Date: 2018-04-13Publisher: American Physical Society (APS)Print ISSN: 0031-9007Electronic ISSN: 1079-7114Topics: PhysicsKeywords: Nuclear PhysicsPublished by: -
5A. Bansal, S. Binder, A. Ekström, G. Hagen, G. R. Jansen, and T. Papenbrock
American Physical Society (APS)
Published 2018Staff ViewPublication Date: 2018-11-02Publisher: American Physical Society (APS)Print ISSN: 0556-2813Electronic ISSN: 1089-490XTopics: PhysicsKeywords: Nuclear StructurePublished by: -
6J. Rotureau, P. Danielewicz, G. Hagen, G. R. Jansen, and F. M. Nunes
American Physical Society (APS)
Published 2018Staff ViewPublication Date: 2018-10-30Publisher: American Physical Society (APS)Print ISSN: 0556-2813Electronic ISSN: 1089-490XTopics: PhysicsKeywords: Nuclear ReactionsPublished by: -
7Z. H. Sun, T. D. Morris, G. Hagen, G. R. Jansen, and T. Papenbrock
American Physical Society (APS)
Published 2018Staff ViewPublication Date: 2018-11-29Publisher: American Physical Society (APS)Print ISSN: 0556-2813Electronic ISSN: 1089-490XTopics: PhysicsKeywords: Nuclear StructurePublished by: -
8A. Chakraborty ; D. Wang ; Y. W. Ebright ; Y. Korlann ; E. Kortkhonjia ; T. Kim ; S. Chowdhury ; S. Wigneshweraraj ; H. Irschik ; R. Jansen ; B. T. Nixon ; J. Knight ; S. Weiss ; R. H. Ebright
American Association for the Advancement of Science (AAAS)
Published 2012Staff ViewPublication Date: 2012-08-04Publisher: American Association for the Advancement of Science (AAAS)Print ISSN: 0036-8075Electronic ISSN: 1095-9203Topics: BiologyChemistry and PharmacologyComputer ScienceMedicineNatural Sciences in GeneralPhysicsKeywords: DNA Polymerase III/*chemistry/drug effects ; Fluorescence Resonance Energy Transfer/methods ; *Gene Expression Regulation, Bacterial ; Protein Conformation ; *Transcription, GeneticPublished by: -
9J. C. Le Breton ; S. Sharma ; H. Saito ; S. Yuasa ; R. Jansen
Nature Publishing Group (NPG)
Published 2011Staff ViewPublication Date: 2011-07-01Publisher: Nature Publishing Group (NPG)Print ISSN: 0028-0836Electronic ISSN: 1476-4687Topics: BiologyChemistry and PharmacologyMedicineNatural Sciences in GeneralPhysicsPublished by: -
10Staff View
Publication Date: 2018-06-22Publisher: American Association for the Advancement of Science (AAAS)Print ISSN: 0036-8075Electronic ISSN: 1095-9203Topics: BiologyChemistry and PharmacologyGeosciencesComputer ScienceMedicineNatural Sciences in GeneralPhysicsKeywords: Genetics, Medicine, Diseases, Online OnlyPublished by: -
11Chen, C., Gardete, S., Jansen, R. S., Shetty, A., Dick, T., Rhee, K. Y., Dartois, V.
The American Society for Microbiology (ASM)
Published 2018Staff ViewPublication Date: 2018-04-27Publisher: The American Society for Microbiology (ASM)Print ISSN: 0066-4804Electronic ISSN: 1098-6596Topics: BiologyMedicinePublished by: -
12Jansen, R. ; van 't Erve, O. M. J. ; Kim, S. D. ; Vlutters, R. ; Anil Kumar, P. S. ; Lodder, J. C.
[S.l.] : American Institute of Physics (AIP)
Published 2001Staff ViewISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: An overview is given of the fabrication, basic properties, and physics of the spin-valve transistor. We describe the layout of this three-terminal ferromagnet/semiconductor hybrid device, as well as the operating principle. Fabrication technologies are discussed, including vacuum metal bonding. We characterize properties of the device relevant for possible applications in magneto-electronics, such as relative magnetic response, output current, and noise behavior. Furthermore, we illustrate the unique possibilities of the spin-valve transistor for fundamental studies of the physics of hot-electron spin transport in magnetic thin film structures. © 2001 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
13Vlutters, R. ; Jansen, R. ; van 't Erve, O. M. J. ; Kim, S. D. ; Lodder, J. C.
[S.l.] : American Institute of Physics (AIP)
Published 2001Staff ViewISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: Hot-electron transport in Ni80Fe20 thin films was studied using a spin-valve transistor. By varying the NiFe thickness from 10 to 100 Å we obtain an attenuation length of 43 Å for majority-spin hot electrons at 0.9 eV above the Fermi level. Based on such relatively long bulk attentuation lengths, one would expect a current transfer ratio that is much larger than the measured value. We propose that the discrepancy can be accounted for by considering interfacial scattering. Increasing the growth quality should thus provide a means to improve the current transfer ratio. © 2001 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
14Staff View
ISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: Heterojunctions between the chalcogenide In–Te and crystalline Si have been fabricated in ultrahigh vacuum, and are characterized for their electrical and photoelectrical properties. The junctions are formed by evaporation of In–Te thin films onto p-type Si(100) substrates at elevated temperature or at room temperature, yielding In–Te in either a crystalline or an amorphous phase. For either of the two phases, diodes display rectifying transport with low reverse-bias leakage current, especially for crystalline In–Te. Only for heterojunctions with crystalline In–Te do we find significant photosensitivity, increasing for thicker In–Te films. The results suggest that at least part of the collected photocarriers originate from the In–Te side of the heterostructure. © 1999 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
15Staff View
ISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: The effect of barrier impurity atoms on the magnetoresistance of ferromagnetic tunnel junctions has been investigated. For that purpose, Co/Al2O3/Ni80Fe20 junctions were prepared with submonolayer amounts of Co, Pd, Cu, or Ni incorporated into the middle of the insulating oxide. The junction magnetoresistance (JMR) was measured at 77 and 300 K and referenced to that of simultaneously prepared control junctions without impurities. The JMR decays approximately linearly with increasing impurity content, the slope depending sensitively on the type of element. The decrease is most pronounced for Ni, with the normalized JMR going down at a rate of 0.39 Å−1 of material (at 77 K), whereas Co shows a relatively weak decay of only 0.08 Å−1. Pd and Cu represent intermediate cases. At 300 K, the suppression of JMR is slightly higher. Results are interpreted in terms of spin-flip scattering of tunneling electrons by the impurities. © 1998 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
16Staff View
ISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: 1-μm-wide Dayem bridges were patterned with a pulsed Xe laser in c-axis-oriented YBaCuO films prepared according to the BaF2 method. The microbridges have a critical current density of 2×106 A/cm2 at 77 K, which is typical for an epitaxial film without grain boundaries. When microwave radiation in the centimeter wavelength range is applied, we observe current steps in the current-voltage characteristic up to 72 K. The dependence of these steps on microwave power is compared with the model of Golovashkin and Lykov {Zh. Eksp. Teor. Fiz. 74, 214 (1978) [Sov. Phys. JETP 47, 110 (1978)]}; we find that the step amplitude is smaller than predicted.Type of Medium: Electronic ResourceURL: -
17Jansen, R.-J. E. ; Farid, Behnam ; Kelly, M. J.
Woodbury, NY : American Institute of Physics (AIP)
Published 1992Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsType of Medium: Electronic ResourceURL: -
18Jansen, R.-J. E. ; Farid, Behnam ; Kelly, M. J.
Woodbury, NY : American Institute of Physics (AIP)
Published 1992Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: We analyze the scattering processes of high-energy (approximately 0.3 eV) electrons impinging at normal incidence on a zero-temperature two-dimensional electron gas (2DEG), and derive an expression for the scattering probability. We proceed in calculating the total scattering rate and energy loss of the hot electrons as a function of their energy of incidence. These results are then compared with those of the recent experiments performed on a hot-electron transistor with a 2DEG base. Our calculated base transfer ratio is in good agreement with the measured value.Type of Medium: Electronic ResourceURL: -
19Prins, M. W. J. ; van der Wielen, M. C. M. M. ; Jansen, R. ; Abraham, D. L. ; van Kempen, H.
Woodbury, NY : American Institute of Physics (AIP)
Published 1994Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: The charge generated at the apex of a semiconductor tip upon laser irradiation is utilized in a scanning tunneling microscope. We show such arrangements can produce photoinduced tunnel currents of several hundred picoamperes, sufficient for stable STM operation and sensitive enough to detect nanowatt variations in the incident optical power.Type of Medium: Electronic ResourceURL: -
20Staff View
ISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: It is shown that the tunnel magnetoresistance of a Co/Al2O3/Ni80Fe20 magnetic tunnel junction is enhanced by δ doping of the oxide barrier with Fe. Enhancements by a factor of up to 1.25 are observed for Fe layers less than a monolayer thick, positioned halfway in the Al2O3 insulator. The effect exists not only at low temperature, but persists up to room temperature, albeit slightly weakened. Also, the enhancement remains present under the application of voltages as large as 0.6 V. Possible explanations are discussed. © 1999 American Institute of Physics.Type of Medium: Electronic ResourceURL: