Search Results - (Author, Cooperation:R. Gwilliam)

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  1. 1
    S. Sawcer ; G. Hellenthal ; M. Pirinen ; C. C. Spencer ; N. A. Patsopoulos ; L. Moutsianas ; A. Dilthey ; Z. Su ; C. Freeman ; S. E. Hunt ; S. Edkins ; E. Gray ; D. R. Booth ; S. C. Potter ; A. Goris ; G. Band ; A. B. Oturai ; A. Strange ; J. Saarela ; C. Bellenguez ; B. Fontaine ; M. Gillman ; B. Hemmer ; R. Gwilliam ; F. Zipp ; A. Jayakumar ; R. Martin ; S. Leslie ; S. Hawkins ; E. Giannoulatou ; S. D'Alfonso ; H. Blackburn ; F. Martinelli Boneschi ; J. Liddle ; H. F. Harbo ; M. L. Perez ; A. Spurkland ; M. J. Waller ; M. P. Mycko ; M. Ricketts ; M. Comabella ; N. Hammond ; I. Kockum ; O. T. McCann ; M. Ban ; P. Whittaker ; A. Kemppinen ; P. Weston ; C. Hawkins ; S. Widaa ; J. Zajicek ; S. Dronov ; N. Robertson ; S. J. Bumpstead ; L. F. Barcellos ; R. Ravindrarajah ; R. Abraham ; L. Alfredsson ; K. Ardlie ; C. Aubin ; A. Baker ; K. Baker ; S. E. Baranzini ; L. Bergamaschi ; R. Bergamaschi ; A. Bernstein ; A. Berthele ; M. Boggild ; J. P. Bradfield ; D. Brassat ; S. A. Broadley ; D. Buck ; H. Butzkueven ; R. Capra ; W. M. Carroll ; P. Cavalla ; E. G. Celius ; S. Cepok ; R. Chiavacci ; F. Clerget-Darpoux ; K. Clysters ; G. Comi ; M. Cossburn ; I. Cournu-Rebeix ; M. B. Cox ; W. Cozen ; B. A. Cree ; A. H. Cross ; D. Cusi ; M. J. Daly ; E. Davis ; P. I. de Bakker ; M. Debouverie ; B. D'Hooghe M ; K. Dixon ; R. Dobosi ; B. Dubois ; D. Ellinghaus ; I. Elovaara ; F. Esposito ; C. Fontenille ; S. Foote ; A. Franke ; D. Galimberti ; A. Ghezzi ; J. Glessner ; R. Gomez ; O. Gout ; C. Graham ; S. F. Grant ; F. R. Guerini ; H. Hakonarson ; P. Hall ; A. Hamsten ; H. P. Hartung ; R. N. Heard ; S. Heath ; J. Hobart ; M. Hoshi ; C. Infante-Duarte ; G. Ingram ; W. Ingram ; T. Islam ; M. Jagodic ; M. Kabesch ; A. G. Kermode ; T. J. Kilpatrick ; C. Kim ; N. Klopp ; K. Koivisto ; M. Larsson ; M. Lathrop ; J. S. Lechner-Scott ; M. A. Leone ; V. Leppa ; U. Liljedahl ; I. L. Bomfim ; R. R. Lincoln ; J. Link ; J. Liu ; A. R. Lorentzen ; S. Lupoli ; F. Macciardi ; T. Mack ; M. Marriott ; V. Martinelli ; D. Mason ; J. L. McCauley ; F. Mentch ; I. L. Mero ; T. Mihalova ; X. Montalban ; J. Mottershead ; K. M. Myhr ; P. Naldi ; W. Ollier ; A. Page ; A. Palotie ; J. Pelletier ; L. Piccio ; T. Pickersgill ; F. Piehl ; S. Pobywajlo ; H. L. Quach ; P. P. Ramsay ; M. Reunanen ; R. Reynolds ; J. D. Rioux ; M. Rodegher ; S. Roesner ; J. P. Rubio ; I. M. Ruckert ; M. Salvetti ; E. Salvi ; A. Santaniello ; C. A. Schaefer ; S. Schreiber ; C. Schulze ; R. J. Scott ; F. Sellebjerg ; K. W. Selmaj ; D. Sexton ; L. Shen ; B. Simms-Acuna ; S. Skidmore ; P. M. Sleiman ; C. Smestad ; P. S. Sorensen ; H. B. Sondergaard ; J. Stankovich ; R. C. Strange ; A. M. Sulonen ; E. Sundqvist ; A. C. Syvanen ; F. Taddeo ; B. Taylor ; J. M. Blackwell ; P. Tienari ; E. Bramon ; A. Tourbah ; M. A. Brown ; E. Tronczynska ; J. P. Casas ; N. Tubridy ; A. Corvin ; J. Vickery ; J. Jankowski ; P. Villoslada ; H. S. Markus ; K. Wang ; C. G. Mathew ; J. Wason ; C. N. Palmer ; H. E. Wichmann ; R. Plomin ; E. Willoughby ; A. Rautanen ; J. Winkelmann ; M. Wittig ; R. C. Trembath ; J. Yaouanq ; A. C. Viswanathan ; H. Zhang ; N. W. Wood ; R. Zuvich ; P. Deloukas ; C. Langford ; A. Duncanson ; J. R. Oksenberg ; M. A. Pericak-Vance ; J. L. Haines ; T. Olsson ; J. Hillert ; A. J. Ivinson ; P. L. De Jager ; L. Peltonen ; G. J. Stewart ; D. A. Hafler ; S. L. Hauser ; G. McVean ; P. Donnelly ; A. Compston
    Nature Publishing Group (NPG)
    Published 2011
    Staff View
    Publication Date:
    2011-08-13
    Publisher:
    Nature Publishing Group (NPG)
    Print ISSN:
    0028-0836
    Electronic ISSN:
    1476-4687
    Topics:
    Biology
    Chemistry and Pharmacology
    Medicine
    Natural Sciences in General
    Physics
    Keywords:
    Alleles ; Cell Differentiation/immunology ; Europe/ethnology ; Genetic Predisposition to Disease/*genetics ; Genome, Human/genetics ; Genome-Wide Association Study ; HLA-A Antigens/genetics ; HLA-DR Antigens/genetics ; HLA-DRB1 Chains ; Humans ; Immunity, Cellular/genetics/*immunology ; Major Histocompatibility Complex/genetics ; Multiple Sclerosis/*genetics/*immunology ; Polymorphism, Single Nucleotide/genetics ; Sample Size ; T-Lymphocytes, Helper-Inducer/cytology/immunology
    Published by:
    Latest Papers from Table of Contents or Articles in Press
  2. 2
    Meekison, C. D. ; Booker, G. R. ; Reeson, K. J. ; Spraggs, R. S. ; Gwilliam, R. M. ; Sealy, B. J.

    [S.l.] : American Institute of Physics (AIP)
    Published 1993
    Staff View
    ISSN:
    1089-7550
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    Structures of cobalt disilicide layers fabricated by ion beam synthesis on (001) silicon wafers have been studied by cross-sectional transmission electron microscopy. Implantation at 350 °C with doses of 5 and 7×1017 cm−2 of 200 keV Co+ ions was used, followed by rapid thermal annealing. For the as-implanted wafer with the lower dose, a CoSi2 layer in a parallel (A-type) epitaxial orientation was formed, and below this there were CoSi2 precipitates, some in twinned (B-type) orientations, and {113} defects. With the higher dose, polycrystalline CoSi was also present at the surface and there was substantial surface roughening. For the annealed wafers, as the annealing temperature increased from 700 to 1100 °C, the CoSi2 layer progressively increased in thickness, and the CoSi at the surface of the CoSi2 layer was eliminated. In the silicon beneath the silicide layer, the CoSi2 precipitates were greatly reduced in number and the {113} defects were eliminated.
    Type of Medium:
    Electronic Resource
    URL:
    Articles: DFG German National Licenses
  3. 3
    Gillin, W. P. ; Bradley, I. V. ; Howard, L. K. ; Gwilliam, R. ; Homewood, K. P.

    [S.l.] : American Institute of Physics (AIP)
    Published 1993
    Staff View
    ISSN:
    1089-7550
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    The effects of silicon and beryllium at doping levels of up to 1019 cm−3 on the interdiffusion of GaAs/AlxGa1−xAs and InxGa1−xAs/GaAs quantum wells after annealing have been studied using photoluminescence. It was found that for beryllium concentrations up to 2.5 ×1019 cm−3 and for silicon doping concentrations up to 1018 cm−3, no change in the interdiffusion coefficients could be measured. For a silicon doping concentration of 6×1018 cm−3 a dramatic degradation of the material quality was observed following annealing at 750 °C for 15 s. This resulted in the luminescence from the well disappearing and the appearance of deep level luminescence related to donor-gallium vacancy complexes and arsenic antisite defects. From these results we suggest that the position of the Fermi level plays no role in the intermixing of III-V heterostructures and that most of the enhanced intermixing observed in silicon-doped GaAs/AlxGa1−xAs structures is related to silicon relocation at very high doping levels.
    Type of Medium:
    Electronic Resource
    URL:
    Articles: DFG German National Licenses
  4. 4
    De Veirman, A. ; Van Landuyt, J. ; Reeson, K. J. ; Gwilliam, R. ; Jeynes, C. ; Sealy, B. J.

    [S.l.] : American Institute of Physics (AIP)
    Published 1990
    Staff View
    ISSN:
    1089-7550
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    High-dose Co ion implantation in Si at elevated temperatures is used to synthesize buried CoSi2 layers. It is shown that inclusions of CoSi occur in the CoSi2 layer, when the stoichiometry level is exceeded at the peak of the Co distribution. These CoSi precipitates are observed prior to annealing and after a 5 s rapid thermal annealing (RTA) at 800 °C. During furnace annealing at 1000 °C or for RTA at temperatures above 900 °C, the CoSi phase transforms into CoSi2. In this communication the results of a transmission electron microscopy study of the CoSi inclusions are correlated with the Co depth profile, as determined by Rutherford backscattering spectrometry.
    Type of Medium:
    Electronic Resource
    URL:
    Articles: DFG German National Licenses
  5. 5
    Knights, A. P. ; Gwilliam, R. M. ; Sealy, B. J.

    [S.l.] : American Institute of Physics (AIP)
    Published 2001
    Staff View
    ISSN:
    1089-7550
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    The incorporation of vacancy clusters and vacancy point defects during the growth of Si/Si0.64Ge0.36/Si structures has been observed for growth temperatures between 250 °C and 550 °C using positron annihilation spectroscopy. A strong correlation between the electrical characteristics of the structures and the size and concentration of the clusters is observed. For the onset of two-dimensional hole gas behavior, a defect concentration less than 5×1016 cm−3 is required. A further reduction in concentration below 1×1016 cm−3 results in optimum electrical performance. The depth at which defects are observed increases with decreasing growth temperature indicating defect mobility during growth or subsequent annealing. © 2001 American Institute of Physics.
    Type of Medium:
    Electronic Resource
    URL:
    Articles: DFG German National Licenses
  6. 6
    Hansen, S. I. ; Marsh, J. H. ; Roberts, J. S. ; Gwilliam, R.

    Woodbury, NY : American Institute of Physics (AIP)
    Published 1991
    Staff View
    ISSN:
    1077-3118
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    The effect of boron and fluorine impurity-induced disordering on the refractive index of AlxGa1−xAs multiple quantum well waveguides has been studied experimentally using a grating coupler formed in low-index material. Substantial changes (approximately-greater-than)1% in the refractive index, were obtained in partially disordered material over the measured wavelength range. Fluorine was found to produce larger changes than boron for similar annealing conditions.
    Type of Medium:
    Electronic Resource
    URL:
    Articles: DFG German National Licenses
  7. 7
    Apiwatwaja, R. ; Gwilliam, R. ; Wilson, R. ; Sealy, B. J.

    [S.l.] : American Institute of Physics (AIP)
    Published 1997
    Staff View
    ISSN:
    1089-7550
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    The total concentration of ionized impurities in silicon implanted GaAs was estimated from carrier concentration and mobility values obtained by Hall effect measurements together with published compensations. We have demonstrated that the calculated profiles (ND++NA−) are in good agreement with that of the silicon atomic distributions obtained by secondary-ion-mass spectroscopy. We have observed that a large concentration of gallium vacancies are injected into the sample during a 900 °C anneal for 1000 s using a Si3N4 cap. © 1997 American Institute of Physics.
    Type of Medium:
    Electronic Resource
    URL:
    Articles: DFG German National Licenses
  8. 8
    Kazor, A. ; Gwilliam, R. ; Boyd, Ian W.

    Woodbury, NY : American Institute of Physics (AIP)
    Published 1994
    Staff View
    ISSN:
    1077-3118
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    Rapid thermal oxidation of Si in a mixed oxygen and ozone ambient in the temperature range of 600–1200 °C is reported. Between 600 and 800 °C a large enhancement in oxidation is observed compared with conventional oxide growth in a pure oxygen ambient. For temperatures above 950 °C conventional thermal oxidation dominates and no significant enhancement is found.
    Type of Medium:
    Electronic Resource
    URL:
    Articles: DFG German National Licenses
  9. 9
    Ahmed, S. ; Too, P. ; Gwilliam, R. ; Sealy, B. J.

    Woodbury, NY : American Institute of Physics (AIP)
    Published 2001
    Staff View
    ISSN:
    1077-3118
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    A single-energy isolation scheme is applied to both n-type GaAs and n-type InP using helium ion irradiation at room temperature (RT), 100 °C and 200 °C to create thermally stable highly resistive regions. It is found that optimum isolation and its persistence to the further heat treatment is very much influenced by the implant temperature in the case of n-type GaAs. Isolation caused by hot implants in GaAs layers is more effective and has an improved thermal stability over RT implants which is due to the formation of thermally stable defects during implantation at elevated temperatures. No such behavior is found in the case of n-type InP though the same isolation-implant conditions were applied to both materials. For helium-isolated n-type InP samples, RT implants are as effective as hot implants and the behavior of the sheet resistivity for all substrate temperatures is identical. The isolation scheme used in this work looks promising since such high isolation values (∼107 Ω/)(square, open) with a broad thermally stable window are obtained for n-type InP material. © 2001 American Institute of Physics.
    Type of Medium:
    Electronic Resource
    URL:
    Articles: DFG German National Licenses
  10. 10
    Sharpe, J. S. ; Chen, Y. L. ; Gwilliam, R. M. ; Kewell, A. K. ; McKinty, C. N. ; Lourenço, M. A. ; Shao, G. ; Homewood, K. P. ; Reeson Kirkby, Karen

    Woodbury, NY : American Institute of Physics (AIP)
    Published 1999
    Staff View
    ISSN:
    1077-3118
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    In this letter we report the synthesis of the semiconductor Ru2Si3 by ion implantation into a silicon substrate. The formation of this compound has been confirmed by x-ray measurements and electron diffraction. The absorption coefficient has been determined directly by optical transmission measurements. The band gap is found to be direct with a value in the region of 0.9 eV. © 1999 American Institute of Physics.
    Type of Medium:
    Electronic Resource
    URL:
    Articles: DFG German National Licenses
  11. 11
    Shao, G. ; Ledain, S. ; Chen, Y. L. ; Sharpe, J. S. ; Gwilliam, R. M. ; Homewood, K. P. ; Kirkby, K. Reeson ; Goringe, M. J.

    Woodbury, NY : American Institute of Physics (AIP)
    Published 2000
    Staff View
    ISSN:
    1077-3118
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    Semiconducting Ru2Si3 precipitates have been fabricated by ion beam synthesis and a crystallographic study has been carried out using transmission electron microscopy. The results show that the orientation relationship between Ru2Si3 precipitates and Si is: 〈110〉Si(parallel)〈111〉Ru2Si3 and {11¯1}Si(parallel){1¯10}Ru2Si3, which consists of 16 independent orientation variants. © 2000 American Institute of Physics.
    Type of Medium:
    Electronic Resource
    URL:
    Articles: DFG German National Licenses
  12. 12
    Bithell, E. G. ; Stobbs, W. M. ; Phillips, C. ; Eccleston, R. ; Gwilliam, R.

    [S.l.] : American Institute of Physics (AIP)
    Published 1990
    Staff View
    ISSN:
    1089-7550
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    We report a study of the Se+-ion implantation and subsequent annealing of a GaAs/(Al,Ga)As multiple quantum well, characterizing the process using transmission electron microscopy, photoluminescence spectroscopy, and Monte Carlo simulation techniques. We conclude that enhanced layer interdiffusion occurs at depths several times the projected range for the Se+ implant, and that there is evidence of residual stress at similar depths.
    Type of Medium:
    Electronic Resource
    URL:
    Articles: DFG German National Licenses
  13. 13
    Staff View
    ISSN:
    1476-4687
    Source:
    Nature Archives 1869 - 2009
    Topics:
    Biology
    Chemistry and Pharmacology
    Medicine
    Natural Sciences in General
    Physics
    Notes:
    [Auszug] We have sequenced and annotated the genome of fission yeast (Schizosaccharomyces pombe), which contains the smallest number of protein-coding genes yet recorded for a eukaryote: 4,824. The centromeres are between 35 and 110 kilobases (kb) and contain related repeats including a highly conserved ...
    Type of Medium:
    Electronic Resource
    URL:
    Articles: DFG German National Licenses
  14. 14
    Cohen, L. F. ; Perkins, G. K. ; Polichetti, M. ; Tate, T. J. ; Gwilliam, R. ; Caplin, A. D. ; Bugoslavsky, Y.

    [s.l.] : Macmillian Magazines Ltd.
    Published 2001
    Staff View
    ISSN:
    1476-4687
    Source:
    Nature Archives 1869 - 2009
    Topics:
    Biology
    Chemistry and Pharmacology
    Medicine
    Natural Sciences in General
    Physics
    Notes:
    [Auszug] Magnesium diboride, MgB2, has a relatively high superconducting transition temperature, placing it between the families of low- and high-temperature (copper oxide based) superconductors. Supercurrent flow in MgB2 is unhindered by grain boundaries, making it potentially ...
    Type of Medium:
    Electronic Resource
    URL:
    Articles: DFG German National Licenses
  15. 15
    Staff View
    ISSN:
    1476-4687
    Source:
    Nature Archives 1869 - 2009
    Topics:
    Biology
    Chemistry and Pharmacology
    Medicine
    Natural Sciences in General
    Physics
    Notes:
    [Auszug] Analysis of Plasmodium falciparum chromosome 3, and comparison with chromosome 2, highlights novel features of chromosome organization and gene structure. The sub-telomeric regions of chromosome 3 show a conserved order of features, including repetitive DNA sequences, members of multigene families ...
    Type of Medium:
    Electronic Resource
    URL:
    Articles: DFG German National Licenses
  16. 16
    Staff View
    ISSN:
    1476-4687
    Source:
    Nature Archives 1869 - 2009
    Topics:
    Biology
    Chemistry and Pharmacology
    Medicine
    Natural Sciences in General
    Physics
    Notes:
    [Auszug] Nature 415, 871–880 (2002). In this Article, the author Andreas Düsterhöft was mistakenly omitted: his name and affiliation (footnote 6) should have been inserted between M. Fuchs and C. Fritzc in the author list. In addition, ...
    Type of Medium:
    Electronic Resource
    URL:
    Articles: DFG German National Licenses
  17. 17
    Ng, Wai Lek ; Lourenço, M. A. ; Gwilliam, R. M. ; Ledain, S. ; Shao, G. ; Homewood, K. P.

    [s.l.] : Macmillian Magazines Ltd.
    Published 2001
    Staff View
    ISSN:
    1476-4687
    Source:
    Nature Archives 1869 - 2009
    Topics:
    Biology
    Chemistry and Pharmacology
    Medicine
    Natural Sciences in General
    Physics
    Notes:
    [Auszug] There is an urgent requirement for an optical emitter that is compatible with standard, silicon-based ultra-large-scale integration (ULSI) technology. Bulk silicon has an indirect energy bandgap and is therefore highly inefficient as a light source, necessitating the use of other materials for ...
    Type of Medium:
    Electronic Resource
    URL:
    Articles: DFG German National Licenses
  18. 18
    Gwilliam, R. ; Bensalem, R. ; Sealy, B. ; Stephens, K.

    Amsterdam : Elsevier
    Staff View
    ISSN:
    0378-4363
    Source:
    Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics:
    Physics
    Type of Medium:
    Electronic Resource
    URL:
    Articles: DFG German National Licenses
  19. 19
    Gwilliam, R. ; Sealy, B.J. ; Vianden, R.

    Amsterdam : Elsevier
    Staff View
    ISSN:
    0168-583X
    Source:
    Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics:
    Physics
    Type of Medium:
    Electronic Resource
    URL:
    Articles: DFG German National Licenses
  20. 20
    Haslar, V. ; Seidl, P. ; Hazdra, P. ; Gwilliam, R. ; Sealy, B.

    Amsterdam : Elsevier
    Staff View
    ISSN:
    0168-583X
    Source:
    Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics:
    Physics
    Type of Medium:
    Electronic Resource
    URL:
    Articles: DFG German National Licenses