Search Results - (Author, Cooperation:R. G. Nuzzo)

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  1. 1
    S. Xu ; Z. Yan ; K. I. Jang ; W. Huang ; H. Fu ; J. Kim ; Z. Wei ; M. Flavin ; J. McCracken ; R. Wang ; A. Badea ; Y. Liu ; D. Xiao ; G. Zhou ; J. Lee ; H. U. Chung ; H. Cheng ; W. Ren ; A. Banks ; X. Li ; U. Paik ; R. G. Nuzzo ; Y. Huang ; Y. Zhang ; J. A. Rogers
    American Association for the Advancement of Science (AAAS)
    Published 2015
    Staff View
    Publication Date:
    2015-01-13
    Publisher:
    American Association for the Advancement of Science (AAAS)
    Print ISSN:
    0036-8075
    Electronic ISSN:
    1095-9203
    Topics:
    Biology
    Chemistry and Pharmacology
    Computer Science
    Medicine
    Natural Sciences in General
    Physics
    Published by:
    http://www.aaas.org/

    Latest Papers from Table of Contents or Articles in Press
  2. 2
    J. A. Rogers ; M. G. Lagally ; R. G. Nuzzo
    Nature Publishing Group (NPG)
    Published 2011
    Staff View
    Publication Date:
    2011-09-03
    Publisher:
    Nature Publishing Group (NPG)
    Print ISSN:
    0028-0836
    Electronic ISSN:
    1476-4687
    Topics:
    Biology
    Chemistry and Pharmacology
    Medicine
    Natural Sciences in General
    Physics
    Published by:
    http://www.nature.com/

    Latest Papers from Table of Contents or Articles in Press
  3. 3
    Gualtieri, G. J. ; Schwartz, G. P. ; Nuzzo, R. G. ; Malik, R. J. ; Walker, J. F.

    [S.l.] : American Institute of Physics (AIP)
    Published 1987
    Staff View
    ISSN:
    1089-7550
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    The valence-band discontinuity ΔEv has been determined for the (100) InAs/GaSb system by x-ray photoemission core level spectroscopy. For 20 A(ring) of InAs on GaSb we find that ΔEv=0.53 eV. The reverse structure, consisting of a 20-A(ring) layer of GaSb on InAs, gave a measured value of ΔEv=0.48 eV. Since the difference in these two values lies within our experimental uncertainty, we report an average offset of 0.51±0.1 eV. The large value of the valence-band discontinuity in this system shows the band lineup to be of the broken gap variety with the InAs conduction-band energy lying below that of the GaSb valence band. This result is in good agreement with theoretical predictions.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.338270

    Articles: DFG German National Licenses