Search Results - (Author, Cooperation:R. G. Nuzzo)
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1S. Xu ; Z. Yan ; K. I. Jang ; W. Huang ; H. Fu ; J. Kim ; Z. Wei ; M. Flavin ; J. McCracken ; R. Wang ; A. Badea ; Y. Liu ; D. Xiao ; G. Zhou ; J. Lee ; H. U. Chung ; H. Cheng ; W. Ren ; A. Banks ; X. Li ; U. Paik ; R. G. Nuzzo ; Y. Huang ; Y. Zhang ; J. A. Rogers
American Association for the Advancement of Science (AAAS)
Published 2015Staff ViewPublication Date: 2015-01-13Publisher: American Association for the Advancement of Science (AAAS)Print ISSN: 0036-8075Electronic ISSN: 1095-9203Topics: BiologyChemistry and PharmacologyComputer ScienceMedicineNatural Sciences in GeneralPhysicsPublished by: -
2Staff View
Publication Date: 2011-09-03Publisher: Nature Publishing Group (NPG)Print ISSN: 0028-0836Electronic ISSN: 1476-4687Topics: BiologyChemistry and PharmacologyMedicineNatural Sciences in GeneralPhysicsPublished by: -
3Gualtieri, G. J. ; Schwartz, G. P. ; Nuzzo, R. G. ; Malik, R. J. ; Walker, J. F.
[S.l.] : American Institute of Physics (AIP)
Published 1987Staff ViewISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: The valence-band discontinuity ΔEv has been determined for the (100) InAs/GaSb system by x-ray photoemission core level spectroscopy. For 20 A(ring) of InAs on GaSb we find that ΔEv=0.53 eV. The reverse structure, consisting of a 20-A(ring) layer of GaSb on InAs, gave a measured value of ΔEv=0.48 eV. Since the difference in these two values lies within our experimental uncertainty, we report an average offset of 0.51±0.1 eV. The large value of the valence-band discontinuity in this system shows the band lineup to be of the broken gap variety with the InAs conduction-band energy lying below that of the GaSb valence band. This result is in good agreement with theoretical predictions.Type of Medium: Electronic ResourceURL: