Search Results - (Author, Cooperation:R. Cao)
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1Latest Papers from Table of Contents or Articles in PressXu, B.-J., Chen, Q., Zheng, T., Jiang, Y.-F., Qiao, Y.-Y., Guo, Z.-R., Cao, Y.-L., Wang, Y., Zhang, Y.-Z., Zong, L.-J., Zhu, J., Liu, C.-H., Jiang, Q.-T., Lan, X.-J., Ma, J., Wang, J.-R., Zheng, Y.-L., Wei, Y.-M., Qi, P.-F.
Genetics Society of America (GSA)
Published 2018Staff ViewPublication Date: 2018-03-06Publisher: Genetics Society of America (GSA)Electronic ISSN: 2160-1836Topics: BiologyPublished by: -
2Latest Papers from Table of Contents or Articles in PressSingh, H., Walker, A. J., Amiri-Kordestani, L., Cheng, J., Tang, S., Balcazar, P., Barnett-Ringgold, K., Palmby, T. R., Cao, X., Zheng, N., Liu, Q., Yu, J., Pierce, W. F., Daniels, S. R., Sridhara, R., Ibrahim, A., Kluetz, P. G., Blumenthal, G. M., Beaver, J. A., Pazdur, R.
The American Association for Cancer Research (AACR)
Published 2018Staff ViewPublication Date: 2018-08-02Publisher: The American Association for Cancer Research (AACR)Print ISSN: 1078-0432Electronic ISSN: 1557-3265Topics: MedicinePublished by: -
3Latest Papers from Table of Contents or Articles in PressT. M. Anderson ; W. A. Neiwert ; M. L. Kirk ; P. M. Piccoli ; A. J. Schultz ; T. F. Koetzle ; D. G. Musaev ; K. Morokuma ; R. Cao ; C. L. Hill
American Association for the Advancement of Science (AAAS)
Published 2012Staff ViewPublication Date: 2012-07-24Publisher: American Association for the Advancement of Science (AAAS)Print ISSN: 0036-8075Electronic ISSN: 1095-9203Topics: BiologyChemistry and PharmacologyComputer ScienceMedicineNatural Sciences in GeneralPhysicsPublished by: -
4Latest Papers from Table of Contents or Articles in PressS. Wuenschel, K. Hagel, M. Barbui, J. Gauthier, X. G. Cao, R. Wada, E. J. Kim, Z. Majka, R. Płaneta, Z. Sosin, A. Wieloch, K. Zelga, S. Kowalski, K. Schmidt, C. Ma, G. Zhang, and J. B. Natowitz
American Physical Society (APS)
Published 2018Staff ViewPublication Date: 2018-06-05Publisher: American Physical Society (APS)Print ISSN: 0556-2813Electronic ISSN: 1089-490XTopics: PhysicsKeywords: Nuclear ReactionsPublished by: -
5Latest Papers from Table of Contents or Articles in PressN. Barbero, S. Holenstein, T. Shang, Z. Shermadini, F. Lochner, I. Eremin, C. Wang, G.-H. Cao, R. Khasanov, H.-R. Ott, J. Mesot, and T. Shiroka
American Physical Society (APS)
Published 2018Staff ViewPublication Date: 2018-04-14Publisher: American Physical Society (APS)Print ISSN: 1098-0121Electronic ISSN: 1095-3795Topics: PhysicsKeywords: Superfluidity and superconductivityPublished by: -
6Latest Papers from Table of Contents or Articles in PressG. Kalicy, L. Allison, T. Cao, R. Dzhygadlo, T. Hartlove, T. Horn, C. Hyde, Y. Ilieva, P. Nadel-Turonski, K. Park, K. Peters, C. Schwarz, J. Schwiening, J. Stevens, W. Xi and C. Zorn
Institute of Physics Publishing (IOP)
Published 2018Staff ViewPublication Date: 2018-04-13Publisher: Institute of Physics Publishing (IOP)Electronic ISSN: 1748-0221Topics: PhysicsPublished by: -
7Articles: DFG German National LicensesSpindt, C. J. ; Besser, R. S. ; Cao, R. ; Miyano, K. ; Helms, C. R. ; Spicer, W. E.
Woodbury, NY : American Institute of Physics (AIP)
Published 1989Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: Recently, there has been a great deal of interest in Na2S⋅9H2O as a passivating chemical treatment for GaAs surfaces. It has been shown that it reduces the high surface recombination velocity characteristic of GaAs surfaces, and may offer hope for "unpinning'' the surface Fermi level. We have used photoemission spectroscopy to study the band bending and chemistry of these overlayers on n-type GaAs (100). Identically prepared samples show the characteristic increase in the photoluminescence signal, and have also been characterized using surface conductivity measurements. We find using photoemission that the surface Fermi level of the treated wafer is still near midgap. We also observe the chemistry at the interface, and offer a possible explanation of the photoluminescence and surface conductivity data in terms of it and the advanced unified defect model.Type of Medium: Electronic ResourceURL: -
8Articles: DFG German National LicensesLu, Z. H. ; Tay, S. P. ; Cao, R. ; Pianetta, P.
Woodbury, NY : American Institute of Physics (AIP)
Published 1995Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: High-resolution x-ray photoelectron spectroscopy (XPS) was used to study the chemical nature and physical distribution of N in oxynitride films formed by rapid thermal N2O processes (RTPs). High-resolution synchrotron Si 2p core level photoemission spectroscopy (PES) was used to study the oxide/Si(100) interface suboxide structures with and without the presence of N. XPS N 1s studies indicated that there are two types of N in the RTP oxynitride films. The chemical bond configuration of the first type of N is similar to that N in Si3N4 and is mainly distributed within the first 1 nm from the interface. The second type of N is distributed mainly outside of the first 1 nm region, and the N is likely bonded to two Si and one oxygen atom. PES studies showed that Si formed suboxides with oxygen at the interface for all oxynitride films. It is found that there is no change in the Si+1 structure while there is a dramatic intensity decrease in the Si+2 and Si+3 peaks with the inclusion of N in the oxide. Both the XPS and PES results are explained in terms of a strain reduction as N is incorporated in the film near the interface region, where Si3N4 functions as a buffer layer which reduces the stress caused by the large Si "lattice'' mismatch between the bulk Si and the oxide overlayer. About 1/5 of the Si+2 and 1/3 of Si+3 atoms at the SiO2/Si interface has been replaced by the Si3N4 buffer layer at the oxynitride/Si interface. © 1995 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
9Articles: DFG German National LicensesCao, R. ; Yang, X. ; Terry, J. ; Pianetta, P.
Woodbury, NY : American Institute of Physics (AIP)
Published 1992Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: The Sb-assisted Si, Ge epitaxial growth processes have been studied using high resolution photoemission. It is found that the initially ordered Sb monolayer on the Si(100) and Ge(100) surfaces occupies the epitaxial sites and fully saturates the surface dangling bonds. This results in a reduction of the surface energy. During the growth process, the Sb atoms and the deposited Si, Ge atoms change their positions. Sb atoms segregate to the growth front to form a new ordered layer while leaving the uniform epitaxial Si, Ge layer behind.Type of Medium: Electronic ResourceURL: -
10Articles: DFG German National LicensesCoffman, F. L. ; Cao, R. ; Pianetta, P. A. ; Kapoor, S. ; Kelly, M. ; Terminello, L. J.
Woodbury, NY : American Institute of Physics (AIP)
Published 1996Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: Near-edge x-ray absorption fine structure (NEXAFS) measurements were performed on a variety of carbon materials, covering a range of hybrid bonding character from pure sp3 type to pure sp2 type. Diamond, chemical vapor deposited (CVD) diamond films of varying quality. Diamond-like carbon (DLC) films, and graphite were examined with this technique and these measurements were compared with Raman spectroscopy results and scanning electron microscopy images of carbon film morphology. For the mixed sp2 and sp3 bonded DLC materials, NEXAFS does not suffer from the large Raman cross-section difference between sp2 and sp3 type bonds, thus allowing unambiguous characterization of carbon thin films with a broader range of sp2/sp3 bonding ratios than possible with Raman spectroscopy alone. This capability was used to determine the transition point where the sequential-CVD carbon film growth technique produces predominately sp3 or sp2 bonded material. © 1996 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
11Articles: DFG German National LicensesStaff View
ISSN: 0020-1693Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002Topics: Chemistry and PharmacologyType of Medium: Electronic ResourceURL: -
12Articles: DFG German National LicensesWu, J. ; Shen, Z.-X. ; Dessau, D.S. ; Cao, R. ; Marshall, D.S. ; Pianetta, P. ; Lindau, I. ; Yang, X. ; Wells, B.O. ; Brown, C.A. ; Elloway, D. ; King, D.M. ; Hunziker, H. ; Wendt, H.R. ; Terry, J. ; de Vries, M.S.
Amsterdam : ElsevierStaff ViewISSN: 0921-4534Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002Topics: PhysicsType of Medium: Electronic ResourceURL: -
13Articles: DFG German National LicensesHe, M.-c. ; Long, L. ; Cao, R.-x. ; Chen, C.-s. ; Chen, B.-r. ; Huang, Q.-j. ; Cai, B.-l.
Amsterdam : ElsevierStaff ViewISSN: 0924-4247Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002Topics: Electrical Engineering, Measurement and Control TechnologyType of Medium: Electronic ResourceURL: -
14Articles: DFG German National LicensesStaff View
ISSN: 0924-4247Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002Topics: Electrical Engineering, Measurement and Control TechnologyType of Medium: Electronic ResourceURL: -
15Articles: DFG German National LicensesKendelewicz, T. ; Miyano, K. ; Cao, R. ; Woicik, J.C. ; Lindau, I. ; Spicer, W.E.
Amsterdam : ElsevierStaff ViewISSN: 0039-6028Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002Topics: PhysicsType of Medium: Electronic ResourceURL: -
16Articles: DFG German National LicensesStaff View
ISSN: 0039-6028Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002Topics: PhysicsType of Medium: Electronic ResourceURL: -
17Articles: DFG German National LicensesStaff View
ISSN: 0038-1098Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002Topics: PhysicsType of Medium: Electronic ResourceURL: -
18Articles: DFG German National LicensesStaff View
ISSN: 0368-2048Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002Topics: PhysicsType of Medium: Electronic ResourceURL: -
19Articles: DFG German National LicensesStaff View
ISSN: 1436-6304Keywords: Nash equilibrium ; strict equilibrium ; weakly strict equilibrium ; normal form games ; random games ; Nash-Gleichgewicht ; Gleichgewicht ; schwach-striktes Gleichgewicht ; Spiele in Normalform ; ZufallsspieleSource: Springer Online Journal Archives 1860-2000Topics: MathematicsEconomicsDescription / Table of Contents: Zusammenfassung In dieser Arbeit führen wir das schwach-strikte Gleichgewicht für die gemischte Erweiterung von endlichenn-Personen-Spielen ein. Für diese Spiele zeigen wird, daß dieses Konzept eine echte Verfeinerung des Nash-Gleichgewichts ist. Wir weisen nach, daß die Menge der schwach-strikten Gleichgewichte derartiger Spiele nicht leer ist und mit der Menge der strikten Gleichgewichte übereinstimmt, falls letztere nicht leer ist. Außerdem vergleichen wird das neue Konzept mit anderen in der Literatur vorgeschlagenen Gleichgewichtsbegriffen.Notes: Abstract In this paper we introduce the weakly strict equilibrium for (mixed extensions of) finiten-person games. For those games we prove that our new concept is a strict refinement of the undominated Nash equilibrium concept. We show that their set of weakly strict equilibria is nonempty and coincides with their set of strict equilibria (when the latter is also non-empty) and we study the relation between our refinement and other noncooperative concepts.Type of Medium: Electronic ResourceURL: -
20Articles: DFG German National LicensesStaff View
ISSN: 1435-8107Keywords: Key Words. Brassinolide—Onosma paniculatum—Plant secondary metabolites—Shikonin—Plant cell cultureSource: Springer Online Journal Archives 1860-2000Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, NutritionNotes: Abstract. The effect of brassinolide (BR) on cell growth and shikonin and its derivative formation in Onosma paniculatum cell culture was studied. BR addition with IAA and BAP (+BR/+IAA/+BAP) in B5 medium slightly increased the cell growth at 0.01–0.1 ppb concentration compared with a growth control (−BR/+IAA/+BAP). Only BR addition (+BR/−IAA/−BAP) at 0.001–100 ppb in B5 medium significantly increased the cell fresh weight compared with a growth control (−BR/−IAA/−BAP). The same concentration of BR tested at 0–1000 ppb increased the cell fresh weight of +IAA/+BAP significantly more than that of −IAA/−BAP. BR at 0.001–0.1 ppb with IAA and BAP added (+BR/+IAA/+BAP) in M9 medium increased shikonin and its derivative content markedly by 31–87%, compared with its control (−BR/+IAA/+BAP). BR at 0.001–1000 ppb without IAA and BAP added to M9 medium (+BR/−IAA/−BAP) also increased shikonin and its derivative content compared with its control (−BR/−IAA/−BAP). However, the amount of shikonin and derivative formed of +IAA/+BAP was greater than that of −IAA/−BAP only at the same concentration of BR at 0–1 ppb. These combined results show that BR at 0.01 ppb with IAA and BAP added was the best for cell growth and shikonin formation. Formation of shikonin and its derivative by adding BR at 0.01 ppb with IAA and BAP (+BR/+IAA/+BAP) in M9 medium was significantly enhanced 4 days after BR addition compared with a production control (−BR/+IAA/+BAP). In contrast, +BR/−IAA/−BAP vs. −BR/−IAA/−BAP was not as effective as +BR/+IAA/+BAP vs. −BR/+IAA/+BAP for the shikonin formation. The time course study for shikonin formation also showed that +BR/+IAA/+BAP and −BP/+IAA/+BAP only slightly increased cell growth in M9 medium. Similarly, soluble protein content in the cells treated by BR at 0.01 ppb with IAA and BAP (+BR/+IAA/+BAP) exceeded that of the control (−BR/+IAA/+BAP) 4 days after BR addition. And +BR/−IAA/−BAP only slightly increased the soluble protein content over that of −BR/−IAA/−BAP.Type of Medium: Electronic ResourceURL: