Search Results - (Author, Cooperation:R. A. Anderson)

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  1. 1
    Staff View
    Publication Date:
    2013-07-13
    Publisher:
    Nature Publishing Group (NPG)
    Print ISSN:
    0028-0836
    Electronic ISSN:
    1476-4687
    Topics:
    Biology
    Chemistry and Pharmacology
    Medicine
    Natural Sciences in General
    Physics
    Keywords:
    Autistic Disorder/genetics ; Base Sequence ; Binding Sites/genetics ; Conserved Sequence/genetics ; Eukaryotic Cells/metabolism ; Gene Expression Regulation/*genetics ; Humans ; Molecular Sequence Data ; Nucleotide Motifs/*genetics ; Protein Structure, Tertiary/genetics ; RNA Stability/genetics ; RNA-Binding Proteins/chemistry/genetics/*metabolism
    Published by:
    http://www.nature.com/

    Latest Papers from Table of Contents or Articles in Press
  2. 2
    Seager, C. H. ; Anderson, R. A. ; Brice, D. K.

    [S.l.] : American Institute of Physics (AIP)
    Published 1990
    Staff View
    ISSN:
    1089-7550
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    Hydrogenation of both n- and p-type metal/thin oxide/silicon diodes has been studied using high frequency capacitance profiling. In situ observations of donor and acceptor passivation were made while H ions were implanted through thin gate metallizations at various energies and fluxes. TRIM code simulations of the implantation process as well as studies of the energy, dose, and flux dependence of capacitance data lead us to conclude that irradiation of 400 A(ring) Al gated diodes with 800–1400 eV H ions rapidly establishes a time-independent near-surface H concentration which is proportional to both the ion flux and the implantation depth, and inversely proportional to the hydrogen diffusivity. While direct measurement of ion transits at a variety of electric fields establish that a unique mobility can be assigned to positive H ions, modeling of low and high field data in both n- and p-type samples is consistent with the notion that the positive charge state is occupied only 1/10 of the time. The time dependence of hydrogen penetration for both n- and p-type diodes indicates that hydrogen is, in addition to being trapped at unpassivated shallow donors or acceptors, becoming immobilized at other sites in silicon. The density of these secondary trapping sites correlates well with the shallow dopant population, suggesting that additional hydrogen may become trapped near already-passivated dopant atoms.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.346378

    Articles: DFG German National Licenses
  3. 3
    Anderson, R. A. ; Lagasse, R. R. ; Russick, E. M. ; Schroeder, J. L.

    [S.l.] : American Institute of Physics (AIP)
    Published 2002
    Staff View
    ISSN:
    1089-7550
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    Dielectric potting materials (encapsulants) are used to prevent air breakdown in high-voltage electrical devices. We report breakdown strengths in void-filled encapsulants, stressed with unipolar voltage pulses of the order of 10 μs duration. High strengths, on the order of 100 kV mm−1, are measured under these test conditions. The materials studied include low-density open celled gel-derived foams with cell sizes of 4 μm or less, closed celled CO2-blown polystyrene and urethane foams, and epoxies containing 48 vol % of hollow glass microballoon (GMB) fillers. These last specimens varied the void gas (N2 or SO2) and also the void diameters (tens to hundreds of μm). Our measurements are thought to be directly sensitive to the rate of field-induced ionization events in the void gas; however, the breakdown strengths of the materials tested appeared to vary in direct proportion with the conventional Paschen-law gas-discharge inception threshold, the electric stress at which gas-ionization avalanches become possible. The GMB-epoxy specimens displayed this type of dependence of breakdown strength on the void-gas density and void size, but the measurements were an order of magnitude above the conventional predictions. Small-celled foams also showed increased breakdown strengths with decreased cell size, although their irregular void geometry prevented a direct comparison with the more uniformly structured microballoon-filled encapsulants. The experimental observations are consistent with a breakdown mechanism in which the discharge of a few voids can launch a full breakdown in the composite material. © 2002 American Institute of Physics.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.1445284

    Articles: DFG German National Licenses
  4. 4
    Anderson, R. A. ; Lagasse, R. R. ; Schroeder, J. L.

    [S.l.] : American Institute of Physics (AIP)
    Published 2002
    Staff View
    ISSN:
    1089-7550
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    We report breakdown strengths in a void-filled dielectric material, epoxy containing 48 vol % hollow glass microballoon filler, which is stressed with unipolar voltage pulses of the order of 10 μs duration. The microballoon voids had mean diameters of approximately 40 μm and contained SO2 gas at roughly 30% atmospheric pressure. This void-filled material displays good dielectric strength (of the order of 100 kV mm−1) under these short-pulse test conditions. Results from a variety of electrode geometries are reported, including arrangements in which the electric stress is highly nonuniform. Conventional breakdown criteria based on mean or peak electric stress do not account for these data. A statistics-based predictive breakdown model is developed, in which the dielectric is divided into independent, microballoon-sized "discharge cells" and the spontaneous discharge of a single cell is presumed to launch full breakdown of the composite. We obtain two empirical parameters, the mean and standard deviation of the spontaneous discharge field, by fitting breakdown data from two electrode geometries having roughly uniform fields but with greatly differing volumes of electrically stressed material. This model accounts for many aspects of our data, including the inherent statistical scatter and the dependence on the stressed volume, and it provides informative predictions with electrode geometries giving highly nonuniform fields. Issues related to computational spatial resolution and cutoff distance are also discussed. © 2002 American Institute of Physics.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.1461058

    Articles: DFG German National Licenses
  5. 5
    Anderson, R. A. ; Fineron, P. W.

    Oxford, UK : Blackwell Publishing Ltd
    Published 1994
    Staff View
    ISSN:
    1471-0528
    Source:
    Blackwell Publishing Journal Backfiles 1879-2005
    Topics:
    Medicine
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1111/j.1471-0528.1994.tb13589.x

    Articles: DFG German National Licenses
  6. 6
    Seager, C. H. ; Anderson, R. A.

    [S.l.] : American Institute of Physics (AIP)
    Published 1996
    Staff View
    ISSN:
    1089-7550
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    We demonstrate that periodic exposure to zero bias during in situ hydrogenation of reverse-biased p-type Schottky barrier structures has dramatic effects on H penetration. H influx can be slowed or even stopped by such protocols. By contrast, similar pulsing techniques produce almost no changes of penetration in n-type barriers during hydrogenation; this latter observation is in sharp contrast to the expectations that charge conversion from H+ to H− would reverse the drift of H species. We suggest that these effects are caused by the charge conversion of relatively immobile H-related defects. In the p-type barriers this results in a weakening or reversal of the near surface electric field, effectively stopping the drift of H+ into the bulk. © 1996 American Institute of Physics.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.362825

    Articles: DFG German National Licenses
  7. 7
    Seager, C. H. ; Anderson, R. A.

    Woodbury, NY : American Institute of Physics (AIP)
    Published 1988
    Staff View
    ISSN:
    1077-3118
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    Real-time detection of hydrogen motion and bonding has been accomplished by capacitance voltage profiling of various Schottky and metal- insulator-semiconductor capacitors during low-energy H ion beam injection into the barrier metallization. Finite element analysis modeling of the data indicates that a significant fraction of H interstitials are positively charged, and that bonding of these species with charged boron acceptors proceeds with the large cross section expected of a Coulomb capture process. The 300 K value of the H diffusivity is (approximately-equal-to)10−10 cm2/s in agreement with extrapolation of high-temperature diffusivity data.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.100015

    Articles: DFG German National Licenses
  8. 8
    Kurtz, S. R. ; Anderson, R. A.

    [S.l.] : American Institute of Physics (AIP)
    Published 1986
    Staff View
    ISSN:
    1089-7550
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    A space-charge mapping technique was used to measure the space charge and internal electric fields in metal–poly(ethylene terephthalate)–metal samples subjected to electric field stressing. From these results the role of electronic injection and transport in the observed electrical properties of capacitor structures could be inferred. Below breakdown fields, there was no evidence that the dark current can be attributed to electronic processes. As breakdown fields were approached, a decrease in the injected space charge trapped adjacent to the electrode was observed. This behavior was attributed to the onset of tunneling into high-energy electronic states in the polymer. This process may produce large current densities leading to dielectric breakdown.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.337414

    Articles: DFG German National Licenses
  9. 9
    Anderson, R. A. ; Tucker, W. K.

    [S.l.] : American Institute of Physics (AIP)
    Published 1985
    Staff View
    ISSN:
    1089-7550
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    A simple model is employed to explain the anomalous surface-flashover characteristics observed when insulators in vacuum are stressed with bipolar voltage waveforms. Under unipolar stress, the flashover field is found to vary as the inverse square root of the prebreakdown time delay over the first few tens of nanoseconds, thereafter becoming less dependent on delay. The short-delay behavior, according to our model, results from the accumulation of ionic charge adjacent to the insulator-vacuum interface. At longer delays ions are swept away nearly as rapidly as they are created. Flashover data from conventional insulator assemblies subjected to unipolar stress is consistent with ions being swept away. With the application of a roughly 10 MHz, bipolar voltage waveform a different behavior is observed. The holdoff is unexpectedly low and an anomalous inverse-square-root dependence on delay persists over hundreds of nanoseconds. Analysis of ion motion indicates that some fraction of the ions follow small-amplitude oscillatory trajectories and continue to accumulate for relatively long periods of time. An insulator has been modified to enhance ion removal by decreasing the thickness of polystyrene segments fourfold to 4.7 mm. A 50% improvement in performance is found, although the holdoff remains below standards applicable to unipolar stress.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.335796

    Articles: DFG German National Licenses
  10. 10
    Anderson, R. A. ; Ritzmann, R. F. ; Tabakoff, B.

    Oxford, UK : Blackwell Publishing Ltd
    Published 1977
    Staff View
    ISSN:
    1471-4159
    Source:
    Blackwell Publishing Journal Backfiles 1879-2005
    Topics:
    Medicine
    Notes:
    Abstract— Gamma-hydroxybutyric acid is a neuroactive compound which has been found to be a normal constituent of mammalian brain. The present report characterized enzymatic activity in brain forming gamma-hydroxybutyrate (GHB) from succinic semialdehyde (SSA). When NADPH served as cofactor, whole brain homogenate was capable of forming nearly 300 nmol GHB/min/g brain when enzyme activity was measured at 37°C. GHB production was significantly less (50%) when NADH was the cofactor. A regional localization of these activities indicated that the cerebellum and septal area contained the highest capacity to form GHB in the presence of NADPH; intermediate to high activity was found in the cortex, medulla, superior colliculus and corpus striatum; low activity was present in the inferior colliculus, thalamus, pons, hippocampus, substantia nigra and hypothalamus. Activity in the presence of NADH was rather evenly distributed with the exceptions of the cerebellum and inferior colliculus, which contained high and low activity respectively. Both NADPH- and NADH-dependent activities were found primarily in the cytosol. Pentobarbital inhibited enzyme activity and enzyme activity was differentiated from lactic dehydrogenase and alcohol dehydrogenase by use of specific inhibitors. In addition, mixed substrate experiments and kinetic analysis provided evidence for the presence of two reversible NADPH-dependent enzymes capable of producing GHB from SSA.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1111/j.1471-4159.1977.tb10435.x

    Articles: DFG German National Licenses
  11. 11
    Seager, C. H. ; Anderson, R. A.

    Woodbury, NY : American Institute of Physics (AIP)
    Published 1993
    Staff View
    ISSN:
    1077-3118
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    The effect of light-injected holes on phosphorus/hydrogen pairs has been examined in silicon. Previous studies have shown that light soaking appears to debond H from phosphorus, thereby returning it to the positive charge state. Here, we demonstrate that this charge state change is partially reversible if samples are held in electronic equilibrium for periods of hours to days. Since this recovery process can be delayed for days by depleting the light-soaked region, it appears that freed hydrogen is not merely returning to donors, but that the original hole capture event is merely creating a different charge state of the P⋅H pair. We also demonstrate that the kinetics of the hole-induced conversion process is markedly different in depletion than in zero bias and suggest that this is due to the presence of the recovery process which can only occur in the presence of free electrons.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.110739

    Articles: DFG German National Licenses
  12. 12
    Seager, C. H. ; Anderson, R. A.

    Woodbury, NY : American Institute of Physics (AIP)
    Published 1991
    Staff View
    ISSN:
    1077-3118
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    Previous work has demonstrated that B⋅H pairs in silicon thermally dissociate obeying simple first-order kinetics if they are located in a region depleted of majority carriers. B⋅H debonding in equilibrium, however, is a slower, more complex process. We have investigated the dissociation of B⋅H pairs under a variety of equilibrium and nonequilibrium conditions and have demonstrated that the dissociation process is strongly influenced by the local concentration of majority and minority carriers. In particular, we show that injection of minority carriers can markedly accelerate the dissociation process. A model is proposed which suggests that hydrogen released from an acceptor, while initially positive, must always be neutralized before escape is possible. This picture correctly describes the time dependence of debonding in both equilibrium and forward-biased diodes.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.105394

    Articles: DFG German National Licenses
  13. 13
    Estreicher, S. K. ; Seager, C. H. ; Anderson, R. A.

    Woodbury, NY : American Institute of Physics (AIP)
    Published 1991
    Staff View
    ISSN:
    1077-3118
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    The {D,H}+ complex in silicon, with D=P or As, is studied near the ab initio Hartree–Fock level. The results show that the transitions between {D,H}0 and {D,H}+ involve a drastic change in the equilibrium geometry and electronic structure of the complex. The implications of these results on the observed dependence of the debonding rates on majority- and minority-carrier concentrations for both As and P donors are discussed.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.106196

    Articles: DFG German National Licenses
  14. 14
    Kepler, R. G. ; Beeson, P. M. ; Jacobs, S. J. ; Anderson, R. A. ; Sinclair, M. B. ; Valencia, V. S. ; Cahill, P. A.

    Woodbury, NY : American Institute of Physics (AIP)
    Published 1995
    Staff View
    ISSN:
    1077-3118
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    We have measured the drift mobility of electrons and holes in thin, vapor-deposited films of tris(8-hydroxyquinolinolato-N1,O8) aluminum using a time of flight photoconductivity technique. The drift of mobility of both carriers is dispersive and strongly electric field and temperature dependent. At ambient temperature and an electric field of 4×105 V cm−1, the effective mobility of electrons and holes is 1.4×10−6 and 2×10−8 cm2 V−1 s−1, respectively, in a 400 nm thick sample. © 1995 American Institute of Physics.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.113806

    Articles: DFG German National Licenses
  15. 15
    Anderson, R. A. ; Perrizo, C. ; Fusari, S. A.

    Oxford, UK : Blackwell Publishing Ltd
    Published 1968
    Staff View
    ISSN:
    1749-6632
    Source:
    Blackwell Publishing Journal Backfiles 1879-2005
    Topics:
    Natural Sciences in General
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1111/j.1749-6632.1968.tb11761.x

    Articles: DFG German National Licenses
  16. 16
    BOOKWALTER, G. N. ; WARNER, K. ; ANDERSON, R. A.

    Oxford, UK : Blackwell Publishing Ltd
    Published 1977
    Staff View
    ISSN:
    1750-3841
    Source:
    Blackwell Publishing Journal Backfiles 1879-2005
    Topics:
    Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition
    Process Engineering, Biotechnology, Nutrition Technology
    Notes:
    The effect of soy and cottonseed fortification on the nutritional characteristics, storage stability, flavor and color of sorghum was determined. Protein efficiency ratios were significantly higher in blends of sorghum meal with up to 25% defatted, toasted soy than in blends of sorghum meal with liquid cyclone process cottonseed flour. Lysine was found to be nutritionally limiting in blends containing 15% soy or cottonseed flour. Combinations of sorghum grits, meal and flour with 15% soy grits and flour and cottonseed were stored at 49°C for 2 months, 37°C for 6 months and 25°C for 12 months. All combinations displayed adequate stability as measured by changes in available lysine, fat acidity and flavor. Flavor comparisons were made between all-sorghum meal and blends containing up to 50% soy or cottonseed flour. The flavor of all blends was acceptable. There were no preferences between all-sorghum meal and blends containing up to 20% soy or 50% cottonseed flour. Color changes were more apparent with additions of cottonseed than soy.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1111/j.1365-2621.1977.tb12647.x

    Articles: DFG German National Licenses
  17. 17
    BOOKWALTER, G. N. ; WARNER, K. ; ANDERSON, R. A. ; MUSTAKAS, G. C. ; GRIFFIN, E. L.

    Oxford, UK : Blackwell Publishing Ltd
    Published 1975
    Staff View
    ISSN:
    1750-3841
    Source:
    Blackwell Publishing Journal Backfiles 1879-2005
    Topics:
    Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition
    Process Engineering, Biotechnology, Nutrition Technology
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1111/j.1365-2621.1975.tb02179.x

    Articles: DFG German National Licenses
  18. 18
    GARDNER, H. W. ; INGLETT, G. E. ; DEATHERAGE, W. L. ; KWOLEK, W. F. ; ANDERSON, R. A.

    Oxford, UK : Blackwell Publishing Ltd
    Published 1971
    Staff View
    ISSN:
    1750-3841
    Source:
    Blackwell Publishing Journal Backfiles 1879-2005
    Topics:
    Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition
    Process Engineering, Biotechnology, Nutrition Technology
    Notes:
    SUMMARY The composition of corn germ indicates that it may have value as a nutritious food supplement. Heated rolls were used to cook a full-fat flake to products with varying pasting qualities depending upon the temperature of the rolls and the temper moisture of the germ before rolling. A germ flake with improved taste was produced if the temperature of the rolls was held above 124°C. The flavor of the flakes was unchanged after 120 days' storage at 37°C and 7% moisture levels. Oil extracted from the 120-day stored flakes had low peroxide values (low, 1.6 meq/kg oil; high, 17.8 meq/kg oil). The peroxide values were especially low in oil from uncooked germ and germ cooked at a low temperature (99°C). When flakes were stored at 13.5% moisture, mold developed on them within 30 days.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1111/j.1365-2621.1971.tb15150.x

    Articles: DFG German National Licenses
  19. 19
    TER, G. N. BOOKWAL ; WARNER, K. ; ANDERSON, R. A. ; BAGLEY, E. B.

    Oxford, UK : Blackwell Publishing Ltd
    Published 1978
    Staff View
    ISSN:
    1750-3841
    Source:
    Blackwell Publishing Journal Backfiles 1879-2005
    Topics:
    Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition
    Process Engineering, Biotechnology, Nutrition Technology
    Notes:
    The effect of fortifying degermed cornmeal with defatted peanut flour (DPF) was evaluated by studying the nutritional quality, color proper: ties, flavor, storage stability and product applications. Protein efficiency ratio (PER) increased from 0.3-1.4 with 15% DPF. A PER of 2.0 resulted with the addition of 0.18%L-lysine HCl to the blend. Color changes are minimized by levels of 15% or less DPF. Taste panel results indicated no significant change in preference, acceptability and similarity to cornmeal when as much as 20% peanut flour was contained in the blend. Storage stability was satisfactory as indicated by changes in flavor, peroxides, free fatty acids and available and added lysine after storage for 2, 6 and 12 months at 49, 37 and 25°C, respectively. Leavened and unleavened breads were acceptable when prepared with blends containing up to 20% DPF.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1111/j.1365-2621.1978.tb15248.x

    Articles: DFG German National Licenses
  20. 20
    TULLOCH, G. S. ; ANDERSON, R. A.

    [s.l.] : Nature Publishing Group
    Published 1971
    Staff View
    ISSN:
    1476-4687
    Source:
    Nature Archives 1869 - 2009
    Topics:
    Biology
    Chemistry and Pharmacology
    Medicine
    Natural Sciences in General
    Physics
    Notes:
    [Auszug] Three pound dogs, weighing 40-50 pounds and aged 1-2 yr, were used. Each had a D. immitis microfilaraemia, with pre-treatment concentrations of (A) 83, (B) 105 and (C) 5 micro-filariae/20 mm3 of blood respectively. Each was given one 50 mg tablet of tetramisole, directly or in a meatball, daily ...
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1038/232644a0

    Articles: DFG German National Licenses