Search Results - (Author, Cooperation:Q. K. Xue)
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1Latest Papers from Table of Contents or Articles in PressC. L. Song ; Y. L. Wang ; P. Cheng ; Y. P. Jiang ; W. Li ; T. Zhang ; Z. Li ; K. He ; L. Wang ; J. F. Jia ; H. H. Hung ; C. Wu ; X. Ma ; X. Chen ; Q. K. Xue
American Association for the Advancement of Science (AAAS)
Published 2011Staff ViewPublication Date: 2011-06-18Publisher: American Association for the Advancement of Science (AAAS)Print ISSN: 0036-8075Electronic ISSN: 1095-9203Topics: BiologyChemistry and PharmacologyComputer ScienceMedicineNatural Sciences in GeneralPhysicsPublished by: -
2Latest Papers from Table of Contents or Articles in PressC. Z. Chang ; J. Zhang ; X. Feng ; J. Shen ; Z. Zhang ; M. Guo ; K. Li ; Y. Ou ; P. Wei ; L. L. Wang ; Z. Q. Ji ; Y. Feng ; S. Ji ; X. Chen ; J. Jia ; X. Dai ; Z. Fang ; S. C. Zhang ; K. He ; Y. Wang ; L. Lu ; X. C. Ma ; Q. K. Xue
American Association for the Advancement of Science (AAAS)
Published 2013Staff ViewPublication Date: 2013-03-16Publisher: American Association for the Advancement of Science (AAAS)Print ISSN: 0036-8075Electronic ISSN: 1095-9203Topics: BiologyChemistry and PharmacologyComputer ScienceMedicineNatural Sciences in GeneralPhysicsPublished by: -
3Latest Papers from Table of Contents or Articles in PressJ. Zhang ; C. Z. Chang ; P. Tang ; Z. Zhang ; X. Feng ; K. Li ; L. L. Wang ; X. Chen ; C. Liu ; W. Duan ; K. He ; Q. K. Xue ; X. Ma ; Y. Wang
American Association for the Advancement of Science (AAAS)
Published 2013Staff ViewPublication Date: 2013-03-30Publisher: American Association for the Advancement of Science (AAAS)Print ISSN: 0036-8075Electronic ISSN: 1095-9203Topics: BiologyChemistry and PharmacologyComputer ScienceMedicineNatural Sciences in GeneralPhysicsPublished by: -
4Latest Papers from Table of Contents or Articles in PressY. Xing ; H. M. Zhang ; H. L. Fu ; H. Liu ; Y. Sun ; J. P. Peng ; F. Wang ; X. Lin ; X. C. Ma ; Q. K. Xue ; J. Wang ; X. C. Xie
American Association for the Advancement of Science (AAAS)
Published 2015Staff ViewPublication Date: 2015-10-17Publisher: American Association for the Advancement of Science (AAAS)Print ISSN: 0036-8075Electronic ISSN: 1095-9203Topics: BiologyChemistry and PharmacologyComputer ScienceMedicineNatural Sciences in GeneralPhysicsPublished by: -
5Latest Papers from Table of Contents or Articles in PressM. X. Wang ; C. Liu ; J. P. Xu ; F. Yang ; L. Miao ; M. Y. Yao ; C. L. Gao ; C. Shen ; X. Ma ; X. Chen ; Z. A. Xu ; Y. Liu ; S. C. Zhang ; D. Qian ; J. F. Jia ; Q. K. Xue
American Association for the Advancement of Science (AAAS)
Published 2012Staff ViewPublication Date: 2012-03-17Publisher: American Association for the Advancement of Science (AAAS)Print ISSN: 0036-8075Electronic ISSN: 1095-9203Topics: BiologyChemistry and PharmacologyComputer ScienceMedicineNatural Sciences in GeneralPhysicsPublished by: -
6Articles: DFG German National LicensesHasegawa, Y. ; Kiyama, H. ; Xue, Q. K. ; Sakurai, T.
Woodbury, NY : American Institute of Physics (AIP)
Published 1998Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: The three-dimensional (3D) island structure was prepared by molecular beam epitaxy for the lattice mismatched InAs/GaAs(001) system and its images showing atomic structure on faceted planes were taken in situ by ultrahigh vacuum scanning tunneling microscopy (STM). The (113), (114), and (215) faceted planes are observed for the 3D islands. Based on the STM images, atomic structural models are proposed for the faceted surfaces. The surface structure of the (113) faceted planes we propose is different from those observed on the flat GaAs(113) surface. © 1998 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
7Articles: DFG German National LicensesXue, Qizhen ; Xue, Q. K. ; Hasegawa, Y. ; Tsong, I. S. T. ; Sakurai, T.
Woodbury, NY : American Institute of Physics (AIP)
Published 1999Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: A scratch-free and atomically flat 6H–SiC(0001) surface has been successfully prepared by a two-step method which combines atmospheric hydrogen treatment and ultrahigh vacuum Si etching. On this surface, a high-quality GaN(0001) thin film is obtained by radio frequency nitrogen plasma assisted molecular beam epitaxy. Its surface exhibits a typical terrace-plus-step morphology, which enables us to study various GaN(0001) surface superstructures and hollow-core defects with atomic resolution by scanning tunneling microscopy. © 1999 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
8Articles: DFG German National LicensesHasegawa, Y. ; Akiyama, K. ; Ono, M. ; Kahng, S.-J. ; Xue, Q. K. ; Nakayama, K.
Woodbury, NY : American Institute of Physics (AIP)
Published 1999Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: We report that local modification and its erasing with a nanometer-scale size can be performed at a Au/Si(111) interface using ballistic electron emission microscopy (BEEM). By applying a negative voltage on the tip, a region was created where no BEEM current flows at the interface and was imaged with BEEM. The modified area can be erased by applying a voltage with the opposite polarity. It is found that the minimum size of writing and erasing corresponds to Au grains, suggesting a method of rewritable memory on a nanometer-scale dimension. © 1999 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
9Articles: DFG German National LicensesStaff View
ISSN: 1432-0630Keywords: 61.40.-a ; 61.16.FK ; 68.20.ttSource: Springer Online Journal Archives 1860-2000Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision MechanicsPhysicsNotes: Abstract The structural relaxation and crystallization processes of the Cu50Zr50 amorphous alloy have been studied by field ion microscopy (FIM) on an atomic scale. An interesting phenomenon which we call the clustering effect was observed for the first time as far as we know. In the temperature range 673–723 K, clusters consisting of 3, 4, or 5 atoms formed and migrated towards certain crystalline centers. They then combined with one another and rearranged to produce an ordered atomic array. This clustering process including the formation, migration, combination and rearrangement of clusters is considered as a structural relaxation process.Type of Medium: Electronic ResourceURL: -
10Articles: DFG German National LicensesStaff View
ISSN: 1090-6509Source: Springer Online Journal Archives 1860-2000Topics: PhysicsNotes: Abstract Scanning tunneling microscopy and reflection high-energy electron diffraction under ultrahigh vacuum conditions were used to make an in situ study of atomic structures at the surface of an InAs/GaAs heterostructure grown by molecular-beam epitaxy. It was observed that the deposition of approximately 0.3 ML of indium on an arsenic-enriched GaAs(001)-2 × 4 surface leads to the formation of the 4 × 2 phase while the deposition of 0.6 ML indium leads to the appearance of a new 6 × 2 reconstruction. It is shown that layer-by-layer two-dimensional epitaxial growth of InAs on GaAs(001) as far as 13 monolayers can only be achieved if the growth front reproduces the 4 × 2 or 6 × 2 symmetry of the substrate and models of 4 × 2 and 6 × 2 reconstructions are proposed. Atomic-resolution images of faceted planes on the surface of three-dimensional islands in an InAs/GaAs(001) system were obtained for the first time and structural models of these were developed.Type of Medium: Electronic ResourceURL: