Search Results - (Author, Cooperation:P. S. Xu)

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  1. 1
    Staff View
    Publication Date:
    2015-05-15
    Publisher:
    Nature Publishing Group (NPG)
    Print ISSN:
    0028-0836
    Electronic ISSN:
    1476-4687
    Topics:
    Biology
    Chemistry and Pharmacology
    Medicine
    Natural Sciences in General
    Physics
    Published by:
    http://www.nature.com/

    Latest Papers from Table of Contents or Articles in Press
  2. 2
    Staff View
    Publication Date:
    2015-08-27
    Publisher:
    Nature Publishing Group (NPG)
    Print ISSN:
    0028-0836
    Electronic ISSN:
    1476-4687
    Topics:
    Biology
    Chemistry and Pharmacology
    Medicine
    Natural Sciences in General
    Physics
    Published by:
    http://www.nature.com/

    Latest Papers from Table of Contents or Articles in Press
  3. 3
    Xu, P. S. ; Wang, Q. P. ; Lu, E. D. ; Yu, X. J. ; Xu, S. H. ; Zhou, H. J.

    [S.l.] : American Institute of Physics (AIP)
    Published 1995
    Staff View
    ISSN:
    1089-7623
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Electrical Engineering, Measurement and Control Technology
    Notes:
    A grazing incidence spherical grating monochromator (SGM) for photoelectron spectroscopy has been set up in NSRL. It covers the energy range 10–1000 eV. The primary results of commissioning and operation of the beamline have been described. The resolution power could be obtained from 500 to 1000 (E/ΔE) with 50 μm of slit opening in a wide range of photon energy. The improvement of the beamline performance is continuing. © 1995 American Institute of Physics.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.1145796

    Articles: DFG German National Licenses
  4. 4
    Lu, E. D. ; Zhang, F. P. ; Xu, S. H. ; Yu, X. J. ; Xu, P. S. ; Han, Z. F. ; Xu, F. Q. ; Zhang, X. Y.

    Woodbury, NY : American Institute of Physics (AIP)
    Published 1996
    Staff View
    ISSN:
    1077-3118
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    A sulfur passivation method for GaAs, CH3CSNH2 treatment has been developed. It is quite effective for removing the surface oxide layer and forming the sulfide passivation layer on GaAs surface. The enhancements of the PL intensity reveal the reduction of the surface recombination velocity and the reduction of density of defect states by this treatment. The synchrotron radiation photoemission spectroscopy measurements show that sulfur atoms bond both Ga and As atoms. After being annealed, a stable sulfur passivation layer is terminated on the surface due to the As2S3 component react with GaAs into the GaS component. © 1996 American Institute of Physics.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.117534

    Articles: DFG German National Licenses
  5. 5
    Li, Q. ; Pan, H. B. ; Zhu, C. G. ; Xu, P. S. ; Zhang, X. Y.
    Springer
    Published 2000
    Staff View
    ISSN:
    1572-9605
    Keywords:
    Bi-based superconductor ; doping ; XPS
    Source:
    Springer Online Journal Archives 1860-2000
    Topics:
    Electrical Engineering, Measurement and Control Technology
    Physics
    Notes:
    Abstract The Bi2Sr2CaCu2O8+δ system samples doped with Sn on Cu sites were synthesized. Resistivity temperature dependence, X-ray powder diffraction and photoemission experiments have been performed. Suppression of superconductivity in the Sn-doped Bi2Sr2CaCu2O8+δ system has been observed. X-ray photoemission measurements show that Sn ion enters the lattice. Our results reveal that Sn ions are mostly in bivalent states.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1023/A:1007794613891

    Articles: DFG German National Licenses
  6. 6
    Li, Q. ; Pan, H. B. ; Zhu, C. G. ; Xu, P. S. ; Zhang, X. Y.
    Springer
    Published 2000
    Staff View
    ISSN:
    1572-9605
    Keywords:
    Bi-based superconductivity ; doping ; XRD ; XPS
    Source:
    Springer Online Journal Archives 1860-2000
    Topics:
    Electrical Engineering, Measurement and Control Technology
    Physics
    Notes:
    Abstract The Bi2Sr2CaCu2O8+δ system samples doped with Pr on Ca sites were synthesized. Resistivity temperature dependence, X-ray powder diffraction, and photoemission experiments have been performed. Both X-ray diffraction and photoemission measurements show that Pr ion enters the lattice with a valence higher than 3+, which supports the hole-filling mechanism of the suppression of superconductivity.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1023/A:1007881002778

    Articles: DFG German National Licenses
  7. 7
    Li, Q. ; Pan, H. B. ; Zhu, C. G. ; Xu, P. S. ; Zhang, X. Y.
    Springer
    Published 2000
    Staff View
    ISSN:
    1572-9605
    Keywords:
    Bi-based superconductor ; doping ; PES ; XRD
    Source:
    Springer Online Journal Archives 1860-2000
    Topics:
    Electrical Engineering, Measurement and Control Technology
    Physics
    Notes:
    Abstract The Bi2Sr2CaCu2O8+δ system samples doped with Pr on Ca sites were synthesized. Resistivity measurements, x-ray powder diffraction, and photoemission experiments were performed. The experiment results show that Pr ions entered the lattice and chemical environment plays a major role in the shift of core-level spectra and valence-band spectra.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1023/A:1007868700052

    Articles: DFG German National Licenses