Search Results - (Author, Cooperation:P. S. Lin)

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  1. 1
    Staff View
    Publication Date:
    2015-10-16
    Publisher:
    Nature Publishing Group (NPG)
    Print ISSN:
    0028-0836
    Electronic ISSN:
    1476-4687
    Topics:
    Biology
    Chemistry and Pharmacology
    Medicine
    Natural Sciences in General
    Physics
    Keywords:
    Animals ; Cell Line, Tumor ; Enzyme Activation/drug effects ; Female ; Genes, ras/genetics ; Heterocyclic Compounds, 2-Ring/adverse effects/pharmacology ; Humans ; Indoles/adverse effects/pharmacology ; MAP Kinase Signaling System/*drug effects/genetics ; Mice ; Mitogen-Activated Protein Kinases/*metabolism ; Models, Biological ; Mutation/genetics ; Protein Kinase Inhibitors/adverse effects/*pharmacology ; Proto-Oncogene Proteins B-raf/*antagonists & inhibitors/genetics ; Sulfonamides/adverse effects/pharmacology
    Published by:
    http://www.nature.com/

    Latest Papers from Table of Contents or Articles in Press
  2. 2
    Wang, L. C. ; Wang, X. Z. ; Hsu, S. N. ; Lau, S. S. ; Lin, P. S. D. ; Sands, T. ; Schwarz, S. A. ; Plumton, D. L. ; Kuech, T. F.

    [S.l.] : American Institute of Physics (AIP)
    Published 1991
    Staff View
    ISSN:
    1089-7550
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    The Pd-In-Ge nonspiking Ohmic contact to n-GaAs has been investigated using the transmission line, the Kelvin, and the Cox and Strack structures. It has been found that a layered structure of Pd/In/Pd/n-GaAs with 10–20 A(ring) of Ge imbedded in the Pd layer adjacent to the GaAs can lead to a hybrid contact. When the Ohmic formation temperature is above 550 °C, a layer of InxGa1−xAs doped with Ge is formed between the GaAs structure and the metallization. When the Ohmic formation temperature is below 550 °C, a regrown layer of GaAs also doped with Ge is formed at the metallization/GaAs interface. The contact resistivity of 2–3×10−7 Ω cm2 for this contact structure is nearly independent of the contact area from 900 to 0.2 μm2. Low-temperature Ohmic characteristics and thermal stability are also examined.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.348360

    Articles: DFG German National Licenses
  3. 3
    Ximen, Jiye ; Lin, P. S. D. ; Pawley, J. B. ; Schippert, M.

    [S.l.] : American Institute of Physics (AIP)
    Published 1993
    Staff View
    ISSN:
    1089-7623
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Electrical Engineering, Measurement and Control Technology
    Notes:
    In the present study, a comprehensive description and a complete process for designing a high-resolution low-voltage scanning electron microscope with a field emission gun have been discussed, including the design of two types of magnetic immersion lenses optimized for low-voltage operation, the evaluation of their resolution, the design of the magnetic lens/secondary electron collector system, the calculation of three-dimensional trajectories for both secondary electrons and backscattered electrons, and the estimate of their collection efficiency. The computed results and the primary experiments indicate the possibility of achieving nanometer resolution, which basically approaches the electron optical predictable probe size for the low-voltage scanning electron microscope.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.1144381

    Articles: DFG German National Licenses
  4. 4
    Colas, E. ; Simhony, S. ; Kapon, E. ; Bhat, R. ; Hwang, D. M. ; Lin, P. S. D.

    Woodbury, NY : American Institute of Physics (AIP)
    Published 1990
    Staff View
    ISSN:
    1077-3118
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    We report on the growth of dense lateral arrays of GaAs quantum wire structures, obtained by organometallic chemical vapor deposition (OMCVD) on GaAs substrates where a submicron grating has been lithographically defined and etched prior to deposition. The experiments were performed simultaneously on (100) oriented substrates, where the wires are virtually "isolated'' from each other, and on substrates that are vicinal with respect to the (100) orientation, where the wires are "smoothly connected'' by quantum wells. Transmission electron microscopy investigations allowed the study of the morphology of the resulting structures, which was related to the microscopic step nature of the starting surfaces and revealed important basic aspects of growth dynamics.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.103384

    Articles: DFG German National Licenses
  5. 5
    Kash, K. ; Bhat, R. ; Mahoney, Derek D. ; Lin, P. S. D. ; Scherer, A. ; Worlock, J. M. ; Van der Gaag, B. P. ; Koza, M. ; Grabbe, P.

    Woodbury, NY : American Institute of Physics (AIP)
    Published 1989
    Staff View
    ISSN:
    1077-3118
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    We describe a novel method of confining carriers by deliberately creating large inhomogeneous strain patterns in a quantum well. The strain modulates the band gap to provide lateral quantum confinement for excitons. Here, we generate strain confinement in an InGaAs quantum well by reactive ion beam assisted etching through an overlying compressed pseudomorphic quaternary layer using etch masks patterned by electron beam lithography. Photoluminescence spectra of arrays of wires and dots show red-shifted band gaps in direct evidence of lateral confinement. We compare our results to finite element calculations of the inhomogeneous strain in an InP substrate from a compressed overlayer patterned into rectangular wires.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.102266

    Articles: DFG German National Licenses
  6. 6
    Weiner, A. M. ; Lin, P. S. D. ; Marcus, R. B.

    Woodbury, NY : American Institute of Physics (AIP)
    Published 1987
    Staff View
    ISSN:
    1077-3118
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    Sampling measurements of electrical transients generated photoconductively on a 5-μm gold coplanar transmission line on GaAs were performed via multiphoton photoemission. A temporal resolution of 5 ps was achieved, with a voltage sensitivity of 10 mV/(Hz)1/2. These results confirm that the temporal resolution attainable by this technique is enhanced when the dimensions of the structure under examination are reduced.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.98440

    Articles: DFG German National Licenses
  7. 7
    Cox, H. M. ; Lin, P. S. ; Yi-Yan, A. ; Kash, K. ; Seto, M. ; Bastos, P.

    Woodbury, NY : American Institute of Physics (AIP)
    Published 1989
    Staff View
    ISSN:
    1077-3118
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    We propose and demonstrate a technique for artifically bunching the atomic steps on a vicinal substrate to form supersteps of almost arbitrary height. The process involves the etching of a grating of parallel grooves on the surface of a vicinal substrate followed by epitaxial growth that fills the grooves. Steps of height proportional to the period of the grating and the substrate misorientation angle are formed. The technique is demonstrated on a macroscopic scale for the InP/InGaAs material system using chloride transport vapor levitation epitaxy, resulting in InGaAs wire-like structures confined both horizontally and vertically by InP. The growth of quantum wires and laterally periodic superlattices should be possible using this technique with proper scaling of parameters.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.101856

    Articles: DFG German National Licenses
  8. 8
    Frenkel, A. ; Clausen, E. ; Chang, C. C. ; Venkatesan, T. ; Lin, P. S. D. ; Wu, X. D. ; Inam, A. ; Lalevic, B.

    Woodbury, NY : American Institute of Physics (AIP)
    Published 1989
    Staff View
    ISSN:
    1077-3118
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    We have investigated the transport current-induced resistive transitions in predominantly c-axis oriented crystalline Y1Ba2Cu3O7−x superconducting thin films with scanning electron microscopic (SEM) imaging and its correlation with dc current-voltage (I-V) measurements. We find that there is a nonlinear gradual transition region in the I-V curves that is caused by macroscopic effects (current "crowding'', substrate defects, film thickness variation, etc.) and by microscopic dissipation effects. At a high current there is an abrupt transition to the normal state in the I-V curve due to Joule heating. The SEM mapping provides a direct image of the above effects and is useful for characterization and study of fundamental transport properties of high Tc thin films.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.101620

    Articles: DFG German National Licenses
  9. 9
    Clausen, E. M. ; Harbison, J. P. ; Chang, C. C. ; Lin, P. S. D. ; Craighead, H. G. ; Florez, L. T.

    Woodbury, NY : American Institute of Physics (AIP)
    Published 1990
    Staff View
    ISSN:
    1077-3118
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    Positive and negative lithographic patterns have been produced in epitaxial layers of GaAs, achieved by electron beam writing and subsequent etching by Cl2 gas at elevated temperatures. A latent image is formed in the native oxide which is either less resistant to thermal Cl2 etching (positive pattern) or more resistant to thermal Cl2 etching (negative pattern), depending on the electron beam dose. The pattern is stable in air for at least several weeks. The tone of the pattern also depends on the electron beam accelerating voltage, the etching conditions, and the thickness and initial state of the native oxide. Significant changes in the resulting lithography are due to changes in an oxide only a few monolayers thick. Both positive and negative patterns can be produced in adjacent areas with high contrast by variation of the electron-beam does. Initial Auger analysis suggests that chemical rearrangement of the native oxide occurs with electron beam exposure. The discovery that the native oxide on GaAs acts as both positive and negative resists opens tremendous possibilities for in situ processing and device fabrication.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.103560

    Articles: DFG German National Licenses
  10. 10
    Colas, E. ; Kapon, E. ; Simhony, S. ; Cox, H. M. ; Bhat, R. ; Kash, K. ; Lin, P. S. D.

    Woodbury, NY : American Institute of Physics (AIP)
    Published 1989
    Staff View
    ISSN:
    1077-3118
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    We show that macroscopic, as opposed to microscopic, steps can be obtained on a semiconductor vicinal surface when a perturbation has been "printed'' on it, prior to epitaxial growth. This generic crystal growth concept has been studied here with the GaAs/AlGaAs system using organometallic chemical vapor deposition. The details of step formation, stabilization, and subsequent propagation have been investigated with scanning electron microscopy. Regular, sawtooth-like growth patterns have been obtained, with periodic growth rate differences at the step edges. This novel lateral patterning technique was employed to fabricate arrays of quantum wire-like heterostructures.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.101624

    Articles: DFG German National Licenses
  11. 11
    Kash, K. ; Worlock, J. M. ; Sturge, M. D. ; Grabbe, P. ; Harbison, J. P. ; Scherer, A. ; Lin, P. S. D.

    Woodbury, NY : American Institute of Physics (AIP)
    Published 1988
    Staff View
    ISSN:
    1077-3118
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    We report evidence for lateral confinement of excitons within a continuous two-dimensional GaAs-AlGaAs quantum well. The confinement to "wires'' within the well was produced by partially etching a pattern through the upper AlGaAs barrier. We propose a new mechanism, that of patterned strain, for lateral quantum confinement of carriers in semiconductor microstructures, to explain our results.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.99832

    Articles: DFG German National Licenses
  12. 12
    Shao, Zhifeng ; Lin, P. S. D.

    [S.l.] : American Institute of Physics (AIP)
    Published 1989
    Staff View
    ISSN:
    1089-7623
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Electrical Engineering, Measurement and Control Technology
    Notes:
    This article introduces an unconventional electron optical probe forming system which is particularly suitable for low beam voltages and very large specimens, such as semiconductor wafers which also require a large angle tilting. The system can produce an electron probe of less than 20 A(ring) for a nontilting specimen at 1-kV beam voltage with a working distance of 2.5 mm. The particular design allows a large volume of free space below the specimen which may be used to accommodate a complicated transporting mechanism.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.1140541

    Articles: DFG German National Licenses
  13. 13
    Wang, M. C. ; Hwang, D. M. ; Lin, P. S. D. ; Dechiaro, L. ; Zah, C. E. ; Ovadia, S. ; Lee, T. P. ; Darby, D.

    Woodbury, NY : American Institute of Physics (AIP)
    Published 1994
    Staff View
    ISSN:
    1077-3118
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    High-voltage electron-beam-induced-current imaging is used to study the aging of two sets of commercial 0.98 μm lasers with identical strained quantum wells (In0.2Ga0.8As) but different cladding layers (Al0.55Ga0.45As versus In0.49Ga0.51P) on GaAs substrates. We observed the development of facet defects only in the InGaAs/AlGaAs lasers which also exhibited larger threshold-current increases. It therefore suggests that this facet degradation mode is related to the cladding layer composition, not to the strains in the active layer.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.111346

    Articles: DFG German National Licenses
  14. 14
    Verma, S.P. ; Rastogi, A. ; Lin, P.-S.

    Amsterdam : Elsevier
    Staff View
    ISSN:
    0003-9861
    Source:
    Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics:
    Biology
    Chemistry and Pharmacology
    Physics
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1016/0003-9861(92)90453-4

    Articles: DFG German National Licenses
  15. 15
    Jensen, M.D. ; Wallach, D.F.H. ; Lin, P.-S.

    Amsterdam : Elsevier
    Staff View
    ISSN:
    0014-4827
    Source:
    Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics:
    Biology
    Medicine
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1016/0014-4827(74)90406-6

    Articles: DFG German National Licenses
  16. 16
    Perng, R.-K. ; Lin, P.-S. ; Wu, C.-Y.

    Amsterdam : Elsevier
    Staff View
    ISSN:
    0038-1101
    Source:
    Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics:
    Electrical Engineering, Measurement and Control Technology
    Physics
    Type of Medium:
    Electronic Resource
    URL:
    http://linkinghub.elsevier.com/retrieve/pii/0038-1101(91)90138-O

    Articles: DFG German National Licenses
  17. 17
    Lin, P.-S.

    Amsterdam : Elsevier
    Staff View
    ISSN:
    0309-1651
    Source:
    Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics:
    Biology
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1016/0309-1651(81)90024-2

    Articles: DFG German National Licenses
  18. 18
    Lin, P.-S. ; Butterfield, C.E. ; Wallach, D.F.H.

    Amsterdam : Elsevier
    Staff View
    ISSN:
    0309-1651
    Source:
    Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics:
    Biology
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1016/0309-1651(78)90079-6

    Articles: DFG German National Licenses
  19. 19
    Lin, P.-S. ; Chen, H.W.

    Amsterdam : Elsevier
    Staff View
    ISSN:
    0309-1651
    Source:
    Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics:
    Biology
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1016/0309-1651(79)90068-7

    Articles: DFG German National Licenses
  20. 20
    Lin, P.-S. ; Butterfield, C.E. ; Wallach, D.F.H.

    Amsterdam : Elsevier
    Staff View
    ISSN:
    0309-1651
    Source:
    Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics:
    Biology
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1016/0309-1651(77)90010-8

    Articles: DFG German National Licenses