Search Results - (Author, Cooperation:P. Lim)
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1Little, M. P., Lim, H., Friesen, M. C., Preston, D. L., Doody, M. M., Sigurdson, A. J., Neta, G., Alexander, B. H., Chang, L. A., Cahoon, E. K., Simon, S. L., Linet, M. S., Kitahara, C. M.
BMJ Publishing
Published 2018Staff ViewPublication Date: 2018-05-16Publisher: BMJ PublishingElectronic ISSN: 2044-6055Topics: MedicineKeywords: Open access, EpidemiologyPublished by: -
2B. Chalhoub ; F. Denoeud ; S. Liu ; I. A. Parkin ; H. Tang ; X. Wang ; J. Chiquet ; H. Belcram ; C. Tong ; B. Samans ; M. Correa ; C. Da Silva ; J. Just ; C. Falentin ; C. S. Koh ; I. Le Clainche ; M. Bernard ; P. Bento ; B. Noel ; K. Labadie ; A. Alberti ; M. Charles ; D. Arnaud ; H. Guo ; C. Daviaud ; S. Alamery ; K. Jabbari ; M. Zhao ; P. P. Edger ; H. Chelaifa ; D. Tack ; G. Lassalle ; I. Mestiri ; N. Schnel ; M. C. Le Paslier ; G. Fan ; V. Renault ; P. E. Bayer ; A. A. Golicz ; S. Manoli ; T. H. Lee ; V. H. Thi ; S. Chalabi ; Q. Hu ; C. Fan ; R. Tollenaere ; Y. Lu ; C. Battail ; J. Shen ; C. H. Sidebottom ; A. Canaguier ; A. Chauveau ; A. Berard ; G. Deniot ; M. Guan ; Z. Liu ; F. Sun ; Y. P. Lim ; E. Lyons ; C. D. Town ; I. Bancroft ; J. Meng ; J. Ma ; J. C. Pires ; G. J. King ; D. Brunel ; R. Delourme ; M. Renard ; J. M. Aury ; K. L. Adams ; J. Batley ; R. J. Snowdon ; J. Tost ; D. Edwards ; Y. Zhou ; W. Hua ; A. G. Sharpe ; A. H. Paterson ; C. Guan ; P. Wincker
American Association for the Advancement of Science (AAAS)
Published 2014Staff ViewPublication Date: 2014-08-26Publisher: American Association for the Advancement of Science (AAAS)Print ISSN: 0036-8075Electronic ISSN: 1095-9203Topics: BiologyChemistry and PharmacologyComputer ScienceMedicineNatural Sciences in GeneralPhysicsKeywords: Brassica napus/cytology/*genetics ; *Chromosome Duplication ; *Evolution, Molecular ; *Genome, Plant ; *Polyploidy ; Seeds/*geneticsPublished by: -
3S. Mok ; E. A. Ashley ; P. E. Ferreira ; L. Zhu ; Z. Lin ; T. Yeo ; K. Chotivanich ; M. Imwong ; S. Pukrittayakamee ; M. Dhorda ; C. Nguon ; P. Lim ; C. Amaratunga ; S. Suon ; T. T. Hien ; Y. Htut ; M. A. Faiz ; M. A. Onyamboko ; M. Mayxay ; P. N. Newton ; R. Tripura ; C. J. Woodrow ; O. Miotto ; D. P. Kwiatkowski ; F. Nosten ; N. P. Day ; P. R. Preiser ; N. J. White ; A. M. Dondorp ; R. M. Fairhurst ; Z. Bozdech
American Association for the Advancement of Science (AAAS)
Published 2014Staff ViewPublication Date: 2014-12-17Publisher: American Association for the Advancement of Science (AAAS)Print ISSN: 0036-8075Electronic ISSN: 1095-9203Topics: BiologyChemistry and PharmacologyComputer ScienceMedicineNatural Sciences in GeneralPhysicsKeywords: Animals ; Antimalarials/*pharmacology ; Artemisinins/*pharmacology ; Chaperonin Containing TCP-1/genetics/metabolism ; Drug Resistance/*genetics ; Humans ; Malaria/*drug therapy/parasitology ; Malaria, Falciparum/*drug therapy/parasitology ; Plasmodium falciparum/*drug effects/*genetics ; Transcriptome ; Unfolded Protein Response/*geneticsPublished by: -
4Staff View
Publication Date: 2018-05-23Publisher: Institute of Physics (IOP)Print ISSN: 1757-8981Electronic ISSN: 1757-899XTopics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision MechanicsPublished by: -
5F. Ariey ; B. Witkowski ; C. Amaratunga ; J. Beghain ; A. C. Langlois ; N. Khim ; S. Kim ; V. Duru ; C. Bouchier ; L. Ma ; P. Lim ; R. Leang ; S. Duong ; S. Sreng ; S. Suon ; C. M. Chuor ; D. M. Bout ; S. Menard ; W. O. Rogers ; B. Genton ; T. Fandeur ; O. Miotto ; P. Ringwald ; J. Le Bras ; A. Berry ; J. C. Barale ; R. M. Fairhurst ; F. Benoit-Vical ; O. Mercereau-Puijalon ; D. Menard
Nature Publishing Group (NPG)
Published 2013Staff ViewPublication Date: 2013-12-20Publisher: Nature Publishing Group (NPG)Print ISSN: 0028-0836Electronic ISSN: 1476-4687Topics: BiologyChemistry and PharmacologyMedicineNatural Sciences in GeneralPhysicsKeywords: Alleles ; Animals ; Antimalarials/*pharmacology ; Artemisinins/*pharmacology ; Blood Cells/parasitology ; Cambodia ; Drug Resistance/drug effects/*genetics ; Genetic Markers/genetics ; Half-Life ; Humans ; Malaria, Falciparum/drug therapy/*parasitology ; Mutation/genetics ; Parasitic Sensitivity Tests ; Plasmodium falciparum/*drug effects/*genetics/growth & development/isolation & ; purification ; Polymorphism, Single Nucleotide/genetics ; Protein Structure, Tertiary/genetics ; Protozoan Proteins/chemistry/*genetics ; Time FactorsPublished by: -
6E. L. Greer ; T. J. Maures ; D. Ucar ; A. G. Hauswirth ; E. Mancini ; J. P. Lim ; B. A. Benayoun ; Y. Shi ; A. Brunet
Nature Publishing Group (NPG)
Published 2011Staff ViewPublication Date: 2011-10-21Publisher: Nature Publishing Group (NPG)Print ISSN: 0028-0836Electronic ISSN: 1476-4687Topics: BiologyChemistry and PharmacologyMedicineNatural Sciences in GeneralPhysicsKeywords: Animals ; Caenorhabditis elegans/*genetics/*physiology ; Caenorhabditis elegans Proteins/genetics/metabolism ; Chromatin/metabolism ; Epigenesis, Genetic/*genetics ; Female ; Gene Expression Regulation ; Gene Knockdown Techniques ; Histone Demethylases/genetics/metabolism ; Histone-Lysine N-Methyltransferase/deficiency/genetics/metabolism ; Histones ; *Inheritance Patterns ; Longevity/*genetics/physiology ; Male ; Methylation ; Mutation/genetics ; Nuclear Proteins/genetics/metabolism ; Pedigree ; Retinoblastoma-Binding Protein 2/genetics/metabolismPublished by: -
7A. M. Lee ; B. R. Kanter ; D. Wang ; J. P. Lim ; M. E. Zou ; C. Qiu ; T. McMahon ; J. Dadgar ; S. C. Fischbach-Weiss ; R. O. Messing
Nature Publishing Group (NPG)
Published 2013Staff ViewPublication Date: 2013-01-04Publisher: Nature Publishing Group (NPG)Print ISSN: 0028-0836Electronic ISSN: 1476-4687Topics: BiologyChemistry and PharmacologyMedicineNatural Sciences in GeneralPhysicsKeywords: Animals ; Anxiety/genetics ; Behavior, Animal ; Benzophenanthridines/pharmacology ; Cocaine ; Conditioning, Classical ; Cues ; Exons/genetics ; Fear ; Female ; *Gene Deletion ; Male ; Memory/*physiology ; Mice ; Protein Kinase C/analysis/*deficiency/*genetics/immunologyPublished by: -
8Y, Homma ; K, Kawabe ; T, Tsukamoto ; H, Yamanaka ; K, Okada ; E, Okajima ; O, Yoshida ; J, Kumazawa ; G, Fang-Liu ; C, Lee ; T-C, Hsu ; A, Tantiwang ; P, Lim ; M, Sheikh ; SD, Bapat ; VR, Marshall ; K, Tajima ; Y, Aso ; RC, Dela Cruz
Oxford, UK : Blackwell Publishing Ltd
Published 1997Staff ViewISSN: 1442-2042Source: Blackwell Publishing Journal Backfiles 1879-2005Topics: MedicineType of Medium: Electronic ResourceURL: -
9Y S Lim, L C Hau, K Y Loh, K Y Lim, P F Lyons and P C Taylor
Institute of Physics (IOP)
Published 2018Staff ViewPublication Date: 2018-05-23Publisher: Institute of Physics (IOP)Print ISSN: 1755-1307Electronic ISSN: 1755-1315Topics: GeographyGeosciencesPhysicsPublished by: -
10W Wijaya, Y X Lim, P A Kelly, S Bickerton, M A Ali, R Umer and K A Khan
Institute of Physics (IOP)
Published 2018Staff ViewPublication Date: 2018-09-22Publisher: Institute of Physics (IOP)Print ISSN: 1757-8981Electronic ISSN: 1757-899XTopics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision MechanicsPublished by: -
11Wang, Z., Lee, W. J., Koh, B. T. H., Hong, M., Wang, W., Lim, P. N., Feng, J., Park, L. S., Kim, M., Thian, E. S.
American Association for the Advancement of Science (AAAS)
Published 2018Staff ViewPublication Date: 2018-10-20Publisher: American Association for the Advancement of Science (AAAS)Electronic ISSN: 2375-2548Topics: Natural Sciences in GeneralPublished by: -
12A M S M Al-Sawafi, T M Lim, P N Y Yek and M R M bin Julaihi
Institute of Physics (IOP)
Published 2018Staff ViewPublication Date: 2018-11-10Publisher: Institute of Physics (IOP)Print ISSN: 1757-8981Electronic ISSN: 1757-899XTopics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision MechanicsPublished by: -
13Cooperstock, F. I. ; Lim, P. H. ; Peters, P. C.
College Park, Md. : American Institute of Physics (AIP)
Published 1989Staff ViewISSN: 1089-7658Source: AIP Digital ArchiveTopics: MathematicsPhysicsNotes: Two types of discontinuities are considered in conjunction with the conservation laws: those that arise from a limit of finite and differentiable functions in a boundary layer and those that do not. It is shown that the former, which prevail in electromagnetism, do not play a role in the conservation laws, but the situation in other areas of physics, such as general relativity, may be more complex. A necessary and sufficient condition for the existence of the first type of discontinuity is derived. For the second type, the conservation laws are no longer of the conventional form.Type of Medium: Electronic ResourceURL: -
14Staff View
ISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: An anomalously high density of positive trapped charges was observed in thin (4.3-nm thickness) nitrided gate oxides subjected to high-field impulse stressing. Additionally, the transient stress-induced leakage current (AC-SILC) was found to be larger than the steady-state SILC (DC-SILC) in these impulse-stressed thin oxides, contrary to observations in dc-stressed thin oxides. The large AC-SILC was found to be related to the high density of positive trapped holes in the oxide. The hot-hole generation occurs via a regenerative feedback mechanism, with minimal charge relaxation due to the short duration of the impulse stress. This gives rise to an extremely high density of oxide trapped holes that were not observed under dc stress conditions. The trapped holes can be easily annealed electrically at room temperature and the annihilation of the positive oxide trapped charges is accompanied by a reduction in the AC-SILC and a higher number of interface states being created. The trapped holes can either be uniformly or nonuniformly distributed, depending on the polarity of the applied stressing impulse in relation to the substrate doping type. A better understanding of thin oxide degradation under impulse stressing can help in the choice of a suitable write/erase pulse amplitude and duration for use in endurance testing of nonvolatile semiconductor memories to ensure long-term reliable operation. © 2002 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
15Lim, P. K. ; Gaspari, F. ; Zukotynski, S.
[S.l.] : American Institute of Physics (AIP)
Published 1995Staff ViewISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: Diamondlike hydrogenated carbon films were deposited using saddle-field glow discharge in pure methane. The structure of the films was studied using x-ray photoelectron spectroscopy, x-ray stimulated Auger electron spectroscopy, and Raman spectroscopy. It was found that for appropriate conditions of pressure and substrate bias a very high percentage of sp3 bonding could be achieved. © 1995 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
16Gaspari, F. ; Kruzelecky, R. V. ; Lim, P. K. ; Sidhu, L. S. ; Zukotynski, S.
[S.l.] : American Institute of Physics (AIP)
Published 1996Staff ViewISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: Photoluminescence in hydrogenated amorphous carbon thin films deposited using the dc saddle-field glow-discharge technique onto glass and single-crystal silicon substrates was studied. Samples prepared using positive substrate bias exhibited strong broad-band photoluminescence at room temperature. The luminescence spectrum had a major peak at 1.9 eV and two smaller peaks at 2.3 and 2.6 eV. Samples prepared using grounded or negatively biased substrates exhibited only weak photoluminescence near 2.6 eV. Infrared spectroscopy indicates that the luminescence at 1.9 and 2.3 eV is related to the presence of C–OH bonds, whereas the photoluminescence at 2.6 eV appears to be an intrinsic property of the a-C:H films. © 1996 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
17Staff View
ISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: We examine carbon fibers grown at the ends of corona wires during negative point-to-plane corona discharges in hydrocarbon atmospheres. Under certain growth conditions, these fibers are hollow tubes with smooth walls; under other growth conditions, the fibers are also hollow tubes, but have rough surfaces. Scanning electron micrographs of these fibers are discussed and possible applications for these fibers are noted.Type of Medium: Electronic ResourceURL: -
18Staff View
ISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: This article presents a detailed investigation on the stress-induced leakage current (SILC) conduction mechanism via conduction-band electron (CBE) and valence-band electron (VBE) tunneling in thin oxides. An improved SILC model that is able to reproduce the experimental SILC over a wide range of oxide fields, and yet give a realistic level of extracted neutral trap concentration, is proposed. Calculations performed with the improved SILC model suggest that SILC conduction via neutral traps is accompanied by energy relaxation (i.e., an inelastic mechanism), irrespective of the origin (i.e., whether CBE or VBE) of the tunneling species. For both CBE and VBE tunneling, inelastic tunneling with energy relaxation (Erelax) of 1.5 and 0.8 eV, was found to fit the experimental measurements well. These values of Erelax agree with those reported in the literature. © 2002 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
19Lim, P. ; Brock, J. ; Trachtenberg, I.
Woodbury, NY : American Institute of Physics (AIP)
Published 1993Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: Laser-assisted liquid film etching (LALFE) is a new technique for maskless patterning of silicon substrates. This technique involves forming a thin liquid film of etchant on a silicon substrate and focusing a laser beam on the portion to be etched. Results are given for direct-writing, orientation dependent LALFE on (100) and (111)n-Si using films of polyvinyl alcohol (PVA) as a wetting agent for hydrofluoric acid on n-Si.Type of Medium: Electronic ResourceURL: -
20Lim, P. ; Brock, J. R. ; Trachtenberg, I.
Woodbury, NY : American Institute of Physics (AIP)
Published 1992Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: Laser-assisted wet etching (LAWE) of n-silicon using a 514.5-nm line from a cw argon-ion laser in the presence of hydrofluoric acid is reported. The effects of laser fluence, doping level, and acid concentration on the etch rate are investigated. By LAWE, vias and lines can be rapidly etched with smooth profiles under conditions described.Type of Medium: Electronic ResourceURL: