Search Results - (Author, Cooperation:O. Schmidt)
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1Nils Scharnhorst, Javier Cerrillo, Johannes Kramer, Ian D. Leroux, Jannes B. Wübbena, Alex Retzker, and Piet O. Schmidt
American Physical Society (APS)
Published 2018Staff ViewPublication Date: 2018-08-28Publisher: American Physical Society (APS)Print ISSN: 1050-2947Electronic ISSN: 1094-1622Topics: PhysicsKeywords: Atomic and molecular processes in external fields, including interactions with strong fields and short pulsesPublished by: -
2Staff View
Publication Date: 2018-02-10Publisher: Institute of Physics (IOP)Electronic ISSN: 1367-2630Topics: PhysicsPublished by: -
3Antonio Acín, Immanuel Bloch, Harry Buhrman, Tommaso Calarco, Christopher Eichler, Jens Eisert, Daniel Esteve, Nicolas Gisin, Steffen J Glaser, Fedor Jelezko, Stefan Kuhr, Maciej Lewenstein, Max F Riedel, Piet O Schmidt, Rob Thew, Andreas Wallraff, Ian Walmsley and Frank K Wilhelm
Institute of Physics (IOP)
Published 2018Staff ViewPublication Date: 2018-08-16Publisher: Institute of Physics (IOP)Electronic ISSN: 1367-2630Topics: PhysicsPublished by: -
4Staff View
Publication Date: 2018-06-20Publisher: Nature Publishing Group (NPG)Electronic ISSN: 2041-1723Topics: BiologyChemistry and PharmacologyNatural Sciences in GeneralPhysicsPublished by: -
5L. Schmoger ; O. O. Versolato ; M. Schwarz ; M. Kohnen ; A. Windberger ; B. Piest ; S. Feuchtenbeiner ; J. Pedregosa-Gutierrez ; T. Leopold ; P. Micke ; A. K. Hansen ; T. M. Baumann ; M. Drewsen ; J. Ullrich ; P. O. Schmidt ; J. R. Lopez-Urrutia
American Association for the Advancement of Science (AAAS)
Published 2015Staff ViewPublication Date: 2015-03-15Publisher: American Association for the Advancement of Science (AAAS)Print ISSN: 0036-8075Electronic ISSN: 1095-9203Topics: BiologyChemistry and PharmacologyComputer ScienceMedicineNatural Sciences in GeneralPhysicsPublished by: -
6A. B. Harbauer ; M. Opalinska ; C. Gerbeth ; J. S. Herman ; S. Rao ; B. Schonfisch ; B. Guiard ; O. Schmidt ; N. Pfanner ; C. Meisinger
American Association for the Advancement of Science (AAAS)
Published 2014Staff ViewPublication Date: 2014-11-08Publisher: American Association for the Advancement of Science (AAAS)Print ISSN: 0036-8075Electronic ISSN: 1095-9203Topics: BiologyChemistry and PharmacologyComputer ScienceMedicineNatural Sciences in GeneralPhysicsKeywords: CDC2 Protein Kinase/metabolism ; *Cell Cycle ; Cyclin B/metabolism ; Cytosol/metabolism ; Mitochondria/*metabolism ; Mitochondrial Membrane Transport Proteins/*metabolism ; Phosphorylation ; Protein Precursors/*metabolism ; Protein Transport ; Saccharomyces cerevisiae/*cytology/*metabolism ; Saccharomyces cerevisiae Proteins/*metabolismPublished by: -
7P. van der Harst ; W. Zhang ; I. Mateo Leach ; A. Rendon ; N. Verweij ; J. Sehmi ; D. S. Paul ; U. Elling ; H. Allayee ; X. Li ; A. Radhakrishnan ; S. T. Tan ; K. Voss ; C. X. Weichenberger ; C. A. Albers ; A. Al-Hussani ; F. W. Asselbergs ; M. Ciullo ; F. Danjou ; C. Dina ; T. Esko ; D. M. Evans ; L. Franke ; M. Gogele ; J. Hartiala ; M. Hersch ; H. Holm ; J. J. Hottenga ; S. Kanoni ; M. E. Kleber ; V. Lagou ; C. Langenberg ; L. M. Lopez ; L. P. Lyytikainen ; O. Melander ; F. Murgia ; I. M. Nolte ; P. F. O'Reilly ; S. Padmanabhan ; A. Parsa ; N. Pirastu ; E. Porcu ; L. Portas ; I. Prokopenko ; J. S. Ried ; S. Y. Shin ; C. S. Tang ; A. Teumer ; M. Traglia ; S. Ulivi ; H. J. Westra ; J. Yang ; J. H. Zhao ; F. Anni ; A. Abdellaoui ; A. Attwood ; B. Balkau ; S. Bandinelli ; F. Bastardot ; B. Benyamin ; B. O. Boehm ; W. O. Cookson ; D. Das ; P. I. de Bakker ; R. A. de Boer ; E. J. de Geus ; M. H. de Moor ; M. Dimitriou ; F. S. Domingues ; A. Doring ; G. Engstrom ; G. I. Eyjolfsson ; L. Ferrucci ; K. Fischer ; R. Galanello ; S. F. Garner ; B. Genser ; Q. D. Gibson ; G. Girotto ; D. F. Gudbjartsson ; S. E. Harris ; A. L. Hartikainen ; C. E. Hastie ; B. Hedblad ; T. Illig ; J. Jolley ; M. Kahonen ; I. P. Kema ; J. P. Kemp ; L. Liang ; H. Lloyd-Jones ; R. J. Loos ; S. Meacham ; S. E. Medland ; C. Meisinger ; Y. Memari ; E. Mihailov ; K. Miller ; M. F. Moffatt ; M. Nauck ; M. Novatchkova ; T. Nutile ; I. Olafsson ; P. T. Onundarson ; D. Parracciani ; B. W. Penninx ; L. Perseu ; A. Piga ; G. Pistis ; A. Pouta ; U. Puc ; O. Raitakari ; S. M. Ring ; A. Robino ; D. Ruggiero ; A. Ruokonen ; A. Saint-Pierre ; C. Sala ; A. Salumets ; J. Sambrook ; H. Schepers ; C. O. Schmidt ; H. H. Sillje ; R. Sladek ; J. H. Smit ; J. M. Starr ; J. Stephens ; P. Sulem ; T. Tanaka ; U. Thorsteinsdottir ; V. Tragante ; W. H. van Gilst ; L. J. van Pelt ; D. J. van Veldhuisen ; U. Volker ; J. B. Whitfield ; G. Willemsen ; B. R. Winkelmann ; G. Wirnsberger ; A. Algra ; F. Cucca ; A. P. d'Adamo ; J. Danesh ; I. J. Deary ; A. F. Dominiczak ; P. Elliott ; P. Fortina ; P. Froguel ; P. Gasparini ; A. Greinacher ; S. L. Hazen ; M. R. Jarvelin ; K. T. Khaw ; T. Lehtimaki ; W. Maerz ; N. G. Martin ; A. Metspalu ; B. D. Mitchell ; G. W. Montgomery ; C. Moore ; G. Navis ; M. Pirastu ; P. P. Pramstaller ; R. Ramirez-Solis ; E. Schadt ; J. Scott ; A. R. Shuldiner ; G. D. Smith ; J. G. Smith ; H. Snieder ; R. Sorice ; T. D. Spector ; K. Stefansson ; M. Stumvoll ; W. H. Tang ; D. Toniolo ; A. Tonjes ; P. M. Visscher ; P. Vollenweider ; N. J. Wareham ; B. H. Wolffenbuttel ; D. I. Boomsma ; J. S. Beckmann ; G. V. Dedoussis ; P. Deloukas ; M. A. Ferreira ; S. Sanna ; M. Uda ; A. A. Hicks ; J. M. Penninger ; C. Gieger ; J. S. Kooner ; W. H. Ouwehand ; N. Soranzo ; J. C. Chambers
Nature Publishing Group (NPG)
Published 2012Staff ViewPublication Date: 2012-12-12Publisher: Nature Publishing Group (NPG)Print ISSN: 0028-0836Electronic ISSN: 1476-4687Topics: BiologyChemistry and PharmacologyMedicineNatural Sciences in GeneralPhysicsKeywords: Animals ; Cell Cycle/genetics ; Cytokines/metabolism ; Drosophila melanogaster/genetics ; Erythrocytes/cytology/*metabolism ; Female ; Gene Expression Regulation/genetics ; *Genetic Loci ; *Genome-Wide Association Study ; Hematopoiesis/genetics ; Hemoglobins/genetics ; Humans ; Male ; Mice ; Organ Specificity ; *Phenotype ; Polymorphism, Single Nucleotide/genetics ; RNA Interference ; Signal Transduction/geneticsPublished by: -
8Staff View
Publication Date: 2018-12-04Publisher: Nature Publishing Group (NPG)Electronic ISSN: 2041-1723Topics: BiologyChemistry and PharmacologyNatural Sciences in GeneralPhysicsPublished by: -
9M. G. Kozlov, M. S. Safronova, J. R. Crespo López-Urrutia, and P. O. Schmidt
American Physical Society (APS)
Published 2018Staff ViewPublication Date: 2018-12-05Publisher: American Physical Society (APS)Print ISSN: 0034-6861Electronic ISSN: 1539-0756Topics: PhysicsKeywords: Atomic, molecular, and optical physicsPublished by: -
10Staff View
Publication Date: 2018-12-06Publisher: American Physical Society (APS)Print ISSN: 1050-2947Electronic ISSN: 1094-1622Topics: PhysicsKeywords: Quantum optics, physics of lasers, nonlinear optics, classical opticsPublished by: -
11F. Wolf ; Y. Wan ; J. C. Heip ; F. Gebert ; C. Shi ; P. O. Schmidt
Nature Publishing Group (NPG)
Published 2016Staff ViewPublication Date: 2016-02-09Publisher: Nature Publishing Group (NPG)Print ISSN: 0028-0836Electronic ISSN: 1476-4687Topics: BiologyChemistry and PharmacologyMedicineNatural Sciences in GeneralPhysicsPublished by: -
12D. C. Eastwood ; D. Floudas ; M. Binder ; A. Majcherczyk ; P. Schneider ; A. Aerts ; F. O. Asiegbu ; S. E. Baker ; K. Barry ; M. Bendiksby ; M. Blumentritt ; P. M. Coutinho ; D. Cullen ; R. P. de Vries ; A. Gathman ; B. Goodell ; B. Henrissat ; K. Ihrmark ; H. Kauserud ; A. Kohler ; K. LaButti ; A. Lapidus ; J. L. Lavin ; Y. H. Lee ; E. Lindquist ; W. Lilly ; S. Lucas ; E. Morin ; C. Murat ; J. A. Oguiza ; J. Park ; A. G. Pisabarro ; R. Riley ; A. Rosling ; A. Salamov ; O. Schmidt ; J. Schmutz ; I. Skrede ; J. Stenlid ; A. Wiebenga ; X. Xie ; U. Kues ; D. S. Hibbett ; D. Hoffmeister ; N. Hogberg ; F. Martin ; I. V. Grigoriev ; S. C. Watkinson
American Association for the Advancement of Science (AAAS)
Published 2011Staff ViewPublication Date: 2011-07-19Publisher: American Association for the Advancement of Science (AAAS)Print ISSN: 0036-8075Electronic ISSN: 1095-9203Topics: BiologyChemistry and PharmacologyComputer ScienceMedicineNatural Sciences in GeneralPhysicsKeywords: Angiosperms/microbiology ; Basidiomycota/classification/enzymology/*genetics/physiology ; *Biodiversity ; Biological Evolution ; Biota ; Cell Wall/*metabolism ; Coniferophyta/microbiology ; Coriolaceae/enzymology/genetics/physiology ; Gene Expression Profiling ; Genes, Fungal ; Genomics ; Lignin/metabolism ; Mycorrhizae/enzymology/*genetics/physiology ; Oxidoreductases/genetics/metabolism ; Peroxidases/genetics/metabolism ; Phylogeny ; Proteome ; Symbiosis ; Trees/*microbiology ; Wood/metabolism/*microbiologyPublished by: -
13A. Stute ; B. Casabone ; P. Schindler ; T. Monz ; P. O. Schmidt ; B. Brandstatter ; T. E. Northup ; R. Blatt
Nature Publishing Group (NPG)
Published 2012Staff ViewPublication Date: 2012-05-25Publisher: Nature Publishing Group (NPG)Print ISSN: 0028-0836Electronic ISSN: 1476-4687Topics: BiologyChemistry and PharmacologyMedicineNatural Sciences in GeneralPhysicsPublished by: -
14Canon Bermudez, G. S., Karnaushenko, D. D., Karnaushenko, D., Lebanov, A., Bischoff, L., Kaltenbrunner, M., Fassbender, J., Schmidt, O. G., Makarov, D.
American Association for the Advancement of Science (AAAS)
Published 2018Staff ViewPublication Date: 2018-01-20Publisher: American Association for the Advancement of Science (AAAS)Electronic ISSN: 2375-2548Topics: Natural Sciences in GeneralPublished by: -
15Staff View
Publication Date: 2018-05-18Publisher: The American Society for Microbiology (ASM)Print ISSN: 0099-2240Electronic ISSN: 1098-5336Topics: BiologyPublished by: -
16Schieker, S. ; Schmidt, O. G. ; Eberl, K.
Woodbury, NY : American Institute of Physics (AIP)
Published 1998Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: The growth of 2.4 monolayers Ge on 0.2 monolayers of predeposited C on Si results in the formation of 15 nm size Ge islands. Fifty stacked layers of these C-induced Ge dots are grown on Si (001) at 460 °C. Different pieces of the wafer are annealed at temperatures between 460 and 950 °C and for times ranging from 1 to 20 min at 850 °C. For temperatures higher than 550 °C, a pronounced energy blueshift and an evolution from one broad photoluminescence peak to two well-resolved lines reflect a gradual transition from quantum dot states to quantum well-like states. As transmission electron microscopy images illustrate, diffusion processes completely smear out the sharp interfaces between the dots and the surrounding Si. An activation energy of only 1.6 eV and temperature-dependent diffusion coefficients are derived from simple model calculations. © 1998 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
17Schmidt, O. G. ; Lange, C. ; Eberl, K.
Woodbury, NY : American Institute of Physics (AIP)
Published 1997Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: A very small amount of pre-deposited C on a Si substrate causes island formation after epitaxial growth of less than 2 monolayers Ge. These C-induced Ge dots can be as small as 10 nm in lateral size and 1 nm in height. Their areal density is 1011 cm−2. Intense photoluminescence signal from these small Ge quantum dots is observed reaching a maximum for 2.1±0.3 monolayers of Ge. In the initial stages of island formation, the optical transition of the wetting layer is blue-shifted by strain compensation effects. We propose spatially indirect mechanisms of radiative recombination between electrons confined in the underlying wetting layer and holes confined in the Ge islands. © 1997 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
18Kirstaedter, N. ; Schmidt, O. G. ; Ledentsov, N. N. ; Bimberg, D. ; Ustinov, V. M. ; Egorov, A. Yu. ; Zhukov, A. E. ; Maximov, M. V. ; Kop'ev, P. S. ; Alferov, Zh. I.
Woodbury, NY : American Institute of Physics (AIP)
Published 1996Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: We present gain measurements and calculations for InAs/GaAs quantum dot injection lasers. Measurements of the modal gain and estimation of the confinement factor by transmission electron microscopy yield an exceptionally large material gain of 6.8(±1)×104 cm−1 at 80 A cm−2. Calculations including realistic quantum dot energy levels, dot size fluctuation, nonthermal coupling of carriers in different dots, and band filling effects corroborate this result. A large maximum differential gain of 2×10−12 cm2 at 20 A cm−2 is found. The width of the gain spectrum is determined by participation of excited quantum dot states. We record a low transparency current density of 20 A cm−2. All experiments are carried out at liquid nitrogen temperature. © 1996 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
19Duschl, R. ; Schmidt, O. G. ; Winter, W. ; Eberl, K.
Woodbury, NY : American Institute of Physics (AIP)
Published 1999Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: High quality Ge/Ge1−yCy superlattices with nominal carbon contents of 1.2% and 2.1% were grown by molecular beam epitaxy on Ge(001). In transmission electron microscopy the layers are planar and perfectly pseudomorphic without any extended defects observable. The infrared absorption line at 529 cm−1 is attributed to the local vibrational mode of substitutional carbon in germanium. However, in contrast to Si1−yCy alloys where almost 100% of the C is substitutional under optimized growth conditions, x-ray diffraction measurements indicate that the efficiency of carbon incorporation onto substitutional sites is only about 30% for low temperature growth at TS=200 °C. It reduces further for higher growth temperatures to only about 10% at TS=300 °C. Post-growth annealing experiments indicate thermal stability up to 450 °C. Annealing at higher temperature results in a reduction of substitutional carbon content. As in the case of Si1−yCy alloys the built-in strain is relaxed by C diffusion and not by nucleation of misfit dislocation. © 1999 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
20Schmidt, O. G. ; Schieker, S. ; Eberl, K.
Woodbury, NY : American Institute of Physics (AIP)
Published 1998Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: Pregrowth of a small amount of C on a Si(001) substrate induces small Ge quantum dots. We present a structure where an initial layer of these C-induced Ge dots is followed by five layers of four monolayers Ge, each layer separated by a 2 nm thick Si spacer. Although the critical thickness for planar growth of a single Ge layer is not exceeded, a vertically aligned stack of Ge islands is formed. If we substitute the pure Ge layers by a fivefold stack of C-induced Ge dots, no vertical island correlation is observed. The phenomenon is explained by the strongly kinetically limited process of C-induced Ge island formation, itself. Photoluminescence experiments on stacks of 0.16 monolayers C/2.2 monolayers Ge dots, where we systematically varied the Si spacer thickness and the number of dot layers, suggest that the average dot size increases if the Si spacer is kept thinner than 10 nm. © 1998 American Institute of Physics.Type of Medium: Electronic ResourceURL: