Search Results - (Author, Cooperation:N. Kurbatova)

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  1. 1
    T. Lappalainen ; M. Sammeth ; M. R. Friedlander ; P. A. t Hoen ; J. Monlong ; M. A. Rivas ; M. Gonzalez-Porta ; N. Kurbatova ; T. Griebel ; P. G. Ferreira ; M. Barann ; T. Wieland ; L. Greger ; M. van Iterson ; J. Almlof ; P. Ribeca ; I. Pulyakhina ; D. Esser ; T. Giger ; A. Tikhonov ; M. Sultan ; G. Bertier ; D. G. MacArthur ; M. Lek ; E. Lizano ; H. P. Buermans ; I. Padioleau ; T. Schwarzmayr ; O. Karlberg ; H. Ongen ; H. Kilpinen ; S. Beltran ; M. Gut ; K. Kahlem ; V. Amstislavskiy ; O. Stegle ; M. Pirinen ; S. B. Montgomery ; P. Donnelly ; M. I. McCarthy ; P. Flicek ; T. M. Strom ; H. Lehrach ; S. Schreiber ; R. Sudbrak ; A. Carracedo ; S. E. Antonarakis ; R. Hasler ; A. C. Syvanen ; G. J. van Ommen ; A. Brazma ; T. Meitinger ; P. Rosenstiel ; R. Guigo ; I. G. Gut ; X. Estivill ; E. T. Dermitzakis
    Nature Publishing Group (NPG)
    Published 2013
    Staff View
    Publication Date:
    2013-09-17
    Publisher:
    Nature Publishing Group (NPG)
    Print ISSN:
    0028-0836
    Electronic ISSN:
    1476-4687
    Topics:
    Biology
    Chemistry and Pharmacology
    Medicine
    Natural Sciences in General
    Physics
    Keywords:
    Alleles ; Cell Line, Transformed ; Exons/genetics ; Gene Expression Profiling ; Genetic Variation/*genetics ; Genome, Human/*genetics ; *High-Throughput Nucleotide Sequencing ; Humans ; Polymorphism, Single Nucleotide/genetics ; Quantitative Trait Loci/genetics ; RNA, Messenger/analysis/genetics ; *Sequence Analysis, RNA ; Transcriptome/*genetics
    Published by:
    Latest Papers from Table of Contents or Articles in Press
  2. 2
    Staff View
    ISSN:
    1063-7826
    Source:
    Springer Online Journal Archives 1860-2000
    Topics:
    Electrical Engineering, Measurement and Control Technology
    Physics
    Notes:
    Abstract A high-frequency 20-cm−1 shift in the Raman spectrum of silicon implanted with krypton ions has been observed experimentally. The dynamics of the transformation of the microscopic structure of the surface layer of silicon was investigated on the basis of Raman scattering data obtained for different regimes of Kr+ implantation and laser annealing. The experimental data obtained by us are explained well by the presence of local mechanical stresses (∼40 kbar) due to the presence of heavy inert Kr atoms at the lattice sites.
    Type of Medium:
    Electronic Resource
    URL:
    Articles: DFG German National Licenses
  3. 3
    Staff View
    ISSN:
    1063-7826
    Source:
    Springer Online Journal Archives 1860-2000
    Topics:
    Electrical Engineering, Measurement and Control Technology
    Physics
    Notes:
    Abstract An ellipsometric technique is used to study the formation of a finely porous layer saturated with atoms of an inert gas in a crystalline silicon lattice that has been doped by high doses of krypton and then irradiated by nanosecond laser pulses. The changes in the complex refractive index of this layer induced by laser pulses at different powers are studied. A scanning field ion microscope is used to follow the transformation of the pores, as the energy per unit area of the annealing laser light is varied, and to estimate their sizes.
    Type of Medium:
    Electronic Resource
    URL:
    Articles: DFG German National Licenses
  4. 4
    Murashko, M. G. ; Kurbatova, N. I.
    Springer
    Published 1968
    Staff View
    ISSN:
    1573-871X
    Source:
    Springer Online Journal Archives 1860-2000
    Topics:
    Physics
    Notes:
    Abstract The results of a determination of the mass transfer potential and capillary potential as functions of moisture content are presented, together with empirical formulas relating these potentials for sand and clay soils.
    Type of Medium:
    Electronic Resource
    URL:
    Articles: DFG German National Licenses