Search Results - (Author, Cooperation:N. Kurbatova)
-
1T. Lappalainen ; M. Sammeth ; M. R. Friedlander ; P. A. t Hoen ; J. Monlong ; M. A. Rivas ; M. Gonzalez-Porta ; N. Kurbatova ; T. Griebel ; P. G. Ferreira ; M. Barann ; T. Wieland ; L. Greger ; M. van Iterson ; J. Almlof ; P. Ribeca ; I. Pulyakhina ; D. Esser ; T. Giger ; A. Tikhonov ; M. Sultan ; G. Bertier ; D. G. MacArthur ; M. Lek ; E. Lizano ; H. P. Buermans ; I. Padioleau ; T. Schwarzmayr ; O. Karlberg ; H. Ongen ; H. Kilpinen ; S. Beltran ; M. Gut ; K. Kahlem ; V. Amstislavskiy ; O. Stegle ; M. Pirinen ; S. B. Montgomery ; P. Donnelly ; M. I. McCarthy ; P. Flicek ; T. M. Strom ; H. Lehrach ; S. Schreiber ; R. Sudbrak ; A. Carracedo ; S. E. Antonarakis ; R. Hasler ; A. C. Syvanen ; G. J. van Ommen ; A. Brazma ; T. Meitinger ; P. Rosenstiel ; R. Guigo ; I. G. Gut ; X. Estivill ; E. T. Dermitzakis
Nature Publishing Group (NPG)
Published 2013Staff ViewPublication Date: 2013-09-17Publisher: Nature Publishing Group (NPG)Print ISSN: 0028-0836Electronic ISSN: 1476-4687Topics: BiologyChemistry and PharmacologyMedicineNatural Sciences in GeneralPhysicsKeywords: Alleles ; Cell Line, Transformed ; Exons/genetics ; Gene Expression Profiling ; Genetic Variation/*genetics ; Genome, Human/*genetics ; *High-Throughput Nucleotide Sequencing ; Humans ; Polymorphism, Single Nucleotide/genetics ; Quantitative Trait Loci/genetics ; RNA, Messenger/analysis/genetics ; *Sequence Analysis, RNA ; Transcriptome/*geneticsPublished by: -
2Staff View
ISSN: 1063-7826Source: Springer Online Journal Archives 1860-2000Topics: Electrical Engineering, Measurement and Control TechnologyPhysicsNotes: Abstract A high-frequency 20-cm−1 shift in the Raman spectrum of silicon implanted with krypton ions has been observed experimentally. The dynamics of the transformation of the microscopic structure of the surface layer of silicon was investigated on the basis of Raman scattering data obtained for different regimes of Kr+ implantation and laser annealing. The experimental data obtained by us are explained well by the presence of local mechanical stresses (∼40 kbar) due to the presence of heavy inert Kr atoms at the lattice sites.Type of Medium: Electronic ResourceURL: -
3Galyautdinov, M. F. ; Kurbatova, N. V. ; Buinova, É. Yu. ; Shtyrkov, E. I. ; Bukharaev, A. A.
Springer
Published 1997Staff ViewISSN: 1063-7826Source: Springer Online Journal Archives 1860-2000Topics: Electrical Engineering, Measurement and Control TechnologyPhysicsNotes: Abstract An ellipsometric technique is used to study the formation of a finely porous layer saturated with atoms of an inert gas in a crystalline silicon lattice that has been doped by high doses of krypton and then irradiated by nanosecond laser pulses. The changes in the complex refractive index of this layer induced by laser pulses at different powers are studied. A scanning field ion microscope is used to follow the transformation of the pores, as the energy per unit area of the annealing laser light is varied, and to estimate their sizes.Type of Medium: Electronic ResourceURL: -
4Staff View
ISSN: 1573-871XSource: Springer Online Journal Archives 1860-2000Topics: PhysicsNotes: Abstract The results of a determination of the mass transfer potential and capillary potential as functions of moisture content are presented, together with empirical formulas relating these potentials for sand and clay soils.Type of Medium: Electronic ResourceURL: