Search Results - (Author, Cooperation:N. Jiang)
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1Latest Papers from Table of Contents or Articles in PressJing, X., Wang, C., Feng, W., Xing, N., Jiang, H., Lu, X., Zhang, Y., Meng, C.
Royal Society
Published 2018Staff ViewPublication Date: 2018-02-01Publisher: Royal SocietyElectronic ISSN: 2054-5703Topics: Natural Sciences in GeneralKeywords: materials sciencePublished by: -
2Latest Papers from Table of Contents or Articles in PressZ. F. Liu ; S. Fang ; F. A. Moura ; J. N. Ding ; N. Jiang ; J. Di ; M. Zhang ; X. Lepro ; D. S. Galvao ; C. S. Haines ; N. Y. Yuan ; S. G. Yin ; D. W. Lee ; R. Wang ; H. Y. Wang ; W. Lv ; C. Dong ; R. C. Zhang ; M. J. Chen ; Q. Yin ; Y. T. Chong ; R. Zhang ; X. Wang ; M. D. Lima ; R. Ovalle-Robles ; D. Qian ; H. Lu ; R. H. Baughman
American Association for the Advancement of Science (AAAS)
Published 2015Staff ViewPublication Date: 2015-07-25Publisher: American Association for the Advancement of Science (AAAS)Print ISSN: 0036-8075Electronic ISSN: 1095-9203Topics: BiologyChemistry and PharmacologyComputer ScienceMedicineNatural Sciences in GeneralPhysicsKeywords: *Elastic Tissue ; Elasticity ; Electric Capacitance ; *Electronics ; *Muscle, Skeletal ; *Nanotubes, Carbon ; Torsion, MechanicalPublished by: -
3Latest Papers from Table of Contents or Articles in PressM. Ong-Abdullah ; J. M. Ordway ; N. Jiang ; S. E. Ooi ; S. Y. Kok ; N. Sarpan ; N. Azimi ; A. T. Hashim ; Z. Ishak ; S. K. Rosli ; F. A. Malike ; N. A. Bakar ; M. Marjuni ; N. Abdullah ; Z. Yaakub ; M. D. Amiruddin ; R. Nookiah ; R. Singh ; E. T. Low ; K. L. Chan ; N. Azizi ; S. W. Smith ; B. Bacher ; M. A. Budiman ; A. Van Brunt ; C. Wischmeyer ; M. Beil ; M. Hogan ; N. Lakey ; C. C. Lim ; X. Arulandoo ; C. K. Wong ; C. N. Choo ; W. C. Wong ; Y. Y. Kwan ; S. S. Alwee ; R. Sambanthamurthi ; R. A. Martienssen
Nature Publishing Group (NPG)
Published 2015Staff ViewPublication Date: 2015-09-10Publisher: Nature Publishing Group (NPG)Print ISSN: 0028-0836Electronic ISSN: 1476-4687Topics: BiologyChemistry and PharmacologyMedicineNatural Sciences in GeneralPhysicsKeywords: Alleles ; Alternative Splicing/genetics ; Arecaceae/*genetics/metabolism ; *DNA Methylation ; Epigenesis, Genetic/*genetics ; *Epigenomics ; Fruit/genetics ; Genes, Homeobox/genetics ; Genetic Association Studies ; Genome, Plant/*genetics ; Introns/genetics ; Molecular Sequence Data ; *Phenotype ; Plant Oils/analysis/metabolism ; RNA Splice Sites/genetics ; RNA, Small Interfering/genetics ; Retroelements/*geneticsPublished by: -
4Latest Papers from Table of Contents or Articles in PressC. Y. Guo, C. H. Wan, X. Wang, C. Fang, P. Tang, W. J. Kong, M. K. Zhao, L. N. Jiang, B. S. Tao, G. Q. Yu, and X. F. Han
American Physical Society (APS)
Published 2018Staff ViewPublication Date: 2018-10-18Publisher: American Physical Society (APS)Print ISSN: 1098-0121Electronic ISSN: 1095-3795Topics: PhysicsKeywords: MagnetismPublished by: -
5Latest Papers from Table of Contents or Articles in PressKruglov, I. A., Kvashnin, A. G., Goncharov, A. F., Oganov, A. R., Lobanov, S. S., Holtgrewe, N., Jiang, S., Prakapenka, V. B., Greenberg, E., Yanilkin, A. V.
American Association for the Advancement of Science (AAAS)
Published 2018Staff ViewPublication Date: 2018-10-13Publisher: American Association for the Advancement of Science (AAAS)Electronic ISSN: 2375-2548Topics: Natural Sciences in GeneralPublished by: -
6Latest Papers from Table of Contents or Articles in PressWang, Y., Li, N., Jiang, W., Deng, W., Ye, R., Xu, C., Qiao, Y., Sharma, A., Zhang, M., Hung, M.-C., Lin, S. H.
The American Association for Cancer Research (AACR)
Published 2018Staff ViewPublication Date: 2018-11-16Publisher: The American Association for Cancer Research (AACR)Print ISSN: 1078-0432Electronic ISSN: 1557-3265Topics: MedicinePublished by: -
7Latest Papers from Table of Contents or Articles in PressStaff View
Publication Date: 2012-06-23Publisher: Nature Publishing Group (NPG)Print ISSN: 0028-0836Electronic ISSN: 1476-4687Topics: BiologyChemistry and PharmacologyMedicineNatural Sciences in GeneralPhysicsKeywords: Female ; HIV Infections/*epidemiology/*prevention & control ; Health Education/*statistics & numerical data ; Homosexuality, Male/*statistics & numerical data ; Humans ; Male ; *Safe SexPublished by: -
8Latest Papers from Table of Contents or Articles in PressNishii, R., Moriyama, T., Janke, L. J., Yang, W., Suiter, C. C., Lin, T.-N., Li, L., Kihira, K., Toyoda, H., Hofmann, U., Schwab, M., Takagi, M., Morio, T., Manabe, A., Kham, S., Jiang, N., Rabin, K. R., Kato, M., Koh, K., Yeoh, A. E.-J., Hori, H., Yang, J. J.
American Society of Hematology (ASH)
Published 2018Staff ViewPublication Date: 2018-06-01Publisher: American Society of Hematology (ASH)Print ISSN: 0006-4971Electronic ISSN: 1528-0020Topics: BiologyMedicineKeywords: Lymphoid NeoplasiaPublished by: -
9Latest Papers from Table of Contents or Articles in PressChangjiang Liu, Stephen M. Wu, John E. Pearson, J. Samuel Jiang, N. d'Ambrumenil, and Anand Bhattacharya
American Physical Society (APS)
Published 2018Staff ViewPublication Date: 2018-08-29Publisher: American Physical Society (APS)Print ISSN: 1098-0121Electronic ISSN: 1095-3795Topics: PhysicsKeywords: MagnetismPublished by: -
10Latest Papers from Table of Contents or Articles in PressWang, W., Huang, P., Jiang, N., Lu, H., Zhang, D., Wang, D., Zhang, K., Wahlgren, M., Chen, Q.
The American Society for Microbiology (ASM)
Published 2018Staff ViewPublication Date: 2018-07-24Publisher: The American Society for Microbiology (ASM)Print ISSN: 0019-9567Electronic ISSN: 1098-5522Topics: MedicinePublished by: -
11Latest Papers from Table of Contents or Articles in PressStorage stability of organophosphorus pesticide residues in peanut and soya bean extracted solutionsStaff View
Publication Date: 2018-07-26Publisher: Royal SocietyElectronic ISSN: 2054-5703Topics: Natural Sciences in GeneralKeywords: analytical chemistryPublished by: -
12Latest Papers from Table of Contents or Articles in PressM. J. V. Streeter, S. Kneip, M. S. Bloom, R. A. Bendoyro, O. Chekhlov, A. E. Dangor, A. Döpp, C. J. Hooker, J. Holloway, J. Jiang, N. C. Lopes, H. Nakamura, P. A. Norreys, C. A. J. Palmer, P. P. Rajeev, J. Schreiber, D. R. Symes, M. Wing, S. P. D. Mangles, and Z. Najmudin
American Physical Society (APS)
Published 2018Staff ViewPublication Date: 2018-06-20Publisher: American Physical Society (APS)Print ISSN: 0031-9007Electronic ISSN: 1079-7114Topics: PhysicsKeywords: Plasma and Beam PhysicsPublished by: -
13Latest Papers from Table of Contents or Articles in PressPu, Y., Wu, Y., Jiang, N., Chang, W., Li, C., Zhang, S., Duan, L.
American Association for the Advancement of Science (AAAS)
Published 2018Staff ViewPublication Date: 2018-04-21Publisher: American Association for the Advancement of Science (AAAS)Electronic ISSN: 2375-2548Topics: Natural Sciences in GeneralPublished by: -
14Latest Papers from Table of Contents or Articles in PressJ C Liang, J C Xie, Y J Zhang, J G Luo, R G Jiang, N Wei and X Yu
Institute of Physics (IOP)
Published 2018Staff ViewPublication Date: 2018-11-06Publisher: Institute of Physics (IOP)Print ISSN: 1755-1307Electronic ISSN: 1755-1315Topics: GeographyGeosciencesPhysicsPublished by: -
15Articles: DFG German National LicensesJiang, N. ; Agius, B. ; Hugon, M. C. ; Olivier, J. ; Puech, M.
[S.l.] : American Institute of Physics (AIP)
Published 1994Staff ViewISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: The effects of radio-frequency (rf) bias on the chemical, physical and electrical properties of SiO2 films deposited by distributed electron cyclotron resonance plasma enhanced chemical vapor deposition have been investigated. The rf bias power densities used here are relatively low (≤0.3 W/cm2) compared to that used by other researchers, but their influences on deposition processes and on film properties are apparent: the deposition rate decreases with increasing rf bias; the in situ relaxation process of the oxide and the observed surface polish effects have been found to be caused by ion bombardment. The most important effects of the rf bias are on the electrical properties of the deposited films. In particular, a SiO2 film without net fixed charges may be deposited with a low rf bias. It is also shown that the increase in interface trap density with rf bias power is not caused by ion bombardment but to the electron injection from the Si substrate towards the Si/SiO2 interface.Type of Medium: Electronic ResourceURL: -
16Articles: DFG German National LicensesJiang, N. ; Yagyu, H. ; Deguchi, M. ; Won, J. H. ; Mori, Y. ; Hatta, A. ; Kitabatake, M. ; Ito, T. ; Hirao, T. ; Sasaki, T. ; Hiraki, A.
[S.l.] : American Institute of Physics (AIP)
Published 1996Staff ViewISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: We have presented a convenient and effective method to ex situ study ion-implanted and postannealed polycrystalline diamond by transmission electron microscopy (TEM) without thinning the specimens. Chemical-vapor-deposited (CVD) diamond used for transmission electron microscopy study was directly deposited onto Mo TEM grids, and then implanted and postannealed. TEM images clearly reveal that there exists an ion-induced amorphous layer on the as-implanted CVD diamond surface, in which graphitelike structure is embedded. The amorphization processes depend on the irradiation conditions. Hydrogen plasma treatment was employed to anneal the as-implanted CVD diamond. High resolution electron microscopy images indicate that hydrogen plasma treatment can effectively remove the ion-induced surface amorphous layer without graphitizing the diamond. After treatment, high density ball-like diamond blisters appear on the surface, of which the average diameter is only about 2.5 nm, implying the critical size for the stable existence of CVD diamond crystallites may be on the order of a few atomic layers. © 1996 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
17Articles: DFG German National LicensesWon, J. H. ; Hatta, A. ; Yagyu, H. ; Jiang, N. ; Mori, Y. ; Ito, T. ; Sasaki, T. ; Hiraki, A.
Woodbury, NY : American Institute of Physics (AIP)
Published 1996Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: Boron doping of chemical vapor deposited (CVD) diamond films plays an important role for modification of their electrical properties, as well as it improves crystallinity of the resulting films. A comparative study of crystalline quality has been made for boron doped and undoped CVD diamond. It is also found that the edge emission near 240 nm in cathodoluminescence (CL) is significantly intensified by boron incorporation. It is observed that the hydrogen plasma etching rate of B-doped CVD diamond is much smaller than the etching rate of undoped diamond. This proves the fact, that boron incorporation during CVD growth of diamond films can lead to better crystal quality. © 1996 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
18Articles: DFG German National LicensesDiest, Ilse ; Winters, Winnie ; Devriese, Stephan ; Vercamst, Elke ; Han, Jiang N. ; Woestijne, Karel P. ; Bergh, Omer
Oxford, UK : Blackwell Publishing
Published 2001Staff ViewISSN: 1469-8986Source: Blackwell Publishing Journal Backfiles 1879-2005Topics: MedicinePsychologyNotes: Hyperventilation (HV) is often considered part of a defense response, implying an unpleasant emotion (negative valence) combined with a strong action tendency (high arousal). In this study, we investigated the importance of arousal and valence as triggers for HV responses. Forty women imagined eight different scripts varying along the arousal and valence dimensions. The scripts depicted relaxation, fear, depressive, action, and desire situations. After each trial, the imagery was rated for valence, arousal, and vividness. FetCO2, inspiratory and expiratory time, tidal volume, and pulse rate were measured in a nonintrusive way. FetCO2 drops and decreases in inspiratory and expiratory time occurred in all but the depressive and the relaxation scripts, suggesting that a defense conceptualization of hyperventilation is not always appropriate.Type of Medium: Electronic ResourceURL: -
19Articles: DFG German National LicensesJiang, N. ; Zhang, Z. ; Sun, B. W. ; Shi, D.
Woodbury, NY : American Institute of Physics (AIP)
Published 1993Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: A high-resolution electron microscopic (HREM) study of the interface structure between diamond film and its silicon substrate has been carried out. The HREM images reveal that there is an amorphous layer between diamond film and its substrate for a sample grown by the hot filament chemical vapor deposition. β-SiC crystallites are embedded in this amorphous layer. The HREM images of cross-sectional specimens reveal that the diamond crystallites can nucleate directly on either the intermediate amorphous layer, the β-SiC crystallites, or at some scratches of the Si substrate.Type of Medium: Electronic ResourceURL: -
20Articles: DFG German National LicensesJiang, N. ; Buchanan, R. M. ; Lu, Z. ; Stevenson, D. A. ; Hiskes, R. ; DiCarolis, S. A.
Woodbury, NY : American Institute of Physics (AIP)
Published 1994Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: Gadolinium-doped barium cerate thin films have been grown on r-plane (11¯02) sapphire and on silver foil substrates by single solid-source metalorganic chemical vapor deposition using tetramethylheptanedionate mixed powder sources. The films have been deposited at 800 °C at a reduced pressure of 6 Torr. The bulk conductivity of the thin films, as measured by an alternating current impedance method, is close to that of sintered ceramic samples, and shows a similar hydrogen/deuterium isotope effect, providing evidence of protonic conduction.Type of Medium: Electronic ResourceURL: