Search Results - (Author, Cooperation:M. Yamaguchi)

2018-06-30

The American Society for Pharmacology and Experimental Therapeutics (ASPET)

0090-9556

1521-009X

Chemistry and Pharmacology

Medicine

2011-08-02

Nature Publishing Group (NPG)

0028-0836

1476-4687

Biology

Chemistry and Pharmacology

Medicine

Natural Sciences in General

Physics

14-3-3 Proteins/*metabolism ; *Arabidopsis Proteins/chemistry ; Calcium-Binding Proteins/chemistry ; Cell Nucleus/metabolism ; Flowers/*growth & development/*metabolism ; Gene Expression Regulation, Plant ; MADS Domain Proteins/chemistry ; Models, Molecular ; Multiprotein Complexes/chemistry/metabolism ; Oryza/genetics/growth & development/*metabolism ; Plant Proteins/chemistry/genetics/*metabolism ; Plant Shoots/cytology ; Protein Binding ; Sequence Homology, Amino Acid ; Transcription Factors/chemistry ; Two-Hybrid System Techniques

2011-08-06

American Association for the Advancement of Science (AAAS)

0036-8075

1095-9203

Biology

Chemistry and Pharmacology

Computer Science

Medicine

Natural Sciences in General

Physics

Animals ; Axons/*physiology ; Binding Sites ; Calcium-Binding Proteins/chemistry/genetics/*metabolism ; Cell Line ; Cells, Cultured ; GPI-Linked Proteins/genetics/metabolism ; Growth Cones/metabolism ; Humans ; Immunohistochemistry ; Ligands ; Mice ; Mice, Inbred ICR ; Myelin Proteins/genetics/*metabolism ; Olfactory Pathways/*cytology/*growth & development/metabolism ; Prosencephalon/embryology/metabolism ; Protein Binding ; Receptors, Cell Surface/genetics/*metabolism ; Signal Transduction

2013-11-01

Nature Publishing Group (NPG)

0028-0836

1476-4687

Biology

Chemistry and Pharmacology

Medicine

Natural Sciences in General

Physics

Adenylate Kinase/metabolism ; Adiponectin/metabolism/pharmacology ; Adipose Tissue, White/drug effects/metabolism/pathology ; Administration, Oral ; Animals ; Diabetes Mellitus, Type 2/complications/*drug therapy/metabolism/prevention & ; control ; Diet, High-Fat ; Drug Evaluation, Preclinical ; Dyslipidemias/drug therapy ; Enzyme Activation/drug effects ; Glucose Intolerance/drug therapy ; Inflammation/drug therapy ; Insulin Resistance ; Liver/drug effects/metabolism/pathology ; Longevity/*drug effects ; Mice ; Mitochondria/drug effects/metabolism ; Muscle Fibers, Skeletal/cytology/drug effects ; Muscles/cytology ; Obesity/complications/drug therapy/genetics/*physiopathology ; Oxidative Stress/drug effects ; PPAR alpha/metabolism ; Piperidines/administration & dosage/metabolism/*pharmacology/therapeutic use ; Receptors, Adiponectin/*agonists/deficiency/genetics/metabolism ; Signal Transduction/drug effects ; Small Molecule Libraries/chemistry ; Transcription Factors/biosynthesis ; Triglycerides/metabolism

2014-03-22

American Association for the Advancement of Science (AAAS)

0036-8075

1095-9203

Biology

Chemistry and Pharmacology

Computer Science

Medicine

Natural Sciences in General

Physics

Adaptation, Physiological/*genetics ; Amino Acid Sequence ; Arabidopsis/genetics/*physiology ; Bryopsida/genetics/*physiology ; *Gene Expression Regulation, Plant ; Genetic Loci ; Genome, Plant ; Molecular Sequence Data ; Plant Proteins/genetics/*physiology ; Plant Stems/growth & development ; Trans-Activators/genetics/*physiology ; Transcription, Genetic ; Water/*physiology

2015-01-13

American Association for the Advancement of Science (AAAS)

0036-8075

1095-9203

Biology

Chemistry and Pharmacology

Computer Science

Medicine

Natural Sciences in General

Physics

Amino Acid Sequence ; Crystallography, X-Ray ; Molecular Sequence Data ; NADP Transhydrogenases/*chemistry ; Protein Multimerization ; Protein Structure, Tertiary ; *Protons ; Thermus thermophilus/enzymology

2018-06-08

American Society of Hematology (ASH)

0006-4971

1528-0020

Biology

Medicine

Lymphoid Neoplasia, Review Articles

2018-05-19

Institute of Physics (IOP)

1367-2630

Physics

2018-12-11

The American Association of Immunologists (AAI)

0022-1767

1550-6606

Medicine

1089-7550

AIP Digital Archive

Physics

Dynamic magnetic domain observation and eddy current loss of tape-wound cores are discussed up to 5 kHz. The cores are made of 17–22 μm thick (110)[001] oriented silicon steel strips. Dynamic domain patterns were observed by using SEM on the surfaces of the tape-wound cores. In order to distinguish the moving domain walls from the standing ones, the drive frequency of the core should not be integral multiples of the scan frequency of the SEM(50.0 Hz). The model which includes dynamic wall number, wall bowing, and velocity of each domain wall agreed comparatively well with the measured eddy current losses.

Electronic Resource

1089-7550

AIP Digital Archive

Physics

The TbFeCo films were prepared at argon gas pressure PAr of 0.8 and 3.6 mTorr by using the facing targets sputtering (FTS) apparatus. The films showed the polar Kerr rotation angle θk as large as 0.43° at a wavelength of 830 nm. In polar Kerr hysteresis loops, the films with large θk showed the rectangular loops in which the gradient of magnetization at an applied field of coercivity was extremely large. Moreover, the films deposited at PAr of 0.8 mTorr showed the strong wavelength dependence of θk compared with the ones deposited at PAr of 3.6 mTorr.

Electronic Resource

1089-7550

AIP Digital Archive

Physics

Thin films of C60 deposited on p-type Si(100) wafer are implanted with low energy phosphorous ions for the photovoltaic applications. An attempt has been made on the device fabrication with phosphorous ion implanted C60 films grown on the p-type Si wafer. The photovoltaic properties of the solar cell structure are discussed with the dark and illuminated J–V characteristics. The efficiency of the structure in the multiple energy phosphorous ion implanted C60 film/p-Si heterojunction is found to be 0.01% under air mass 1.5 conditions. The low efficiency is attributed to the ion implantation induced damage effects and subsequent larger series resistance values. © 2001 American Institute of Physics.

Electronic Resource

1089-7550

AIP Digital Archive

Physics

We analyzed the permeability measurement error of a low permeance thin film. We clarified that the noise voltage was excited by a current loop which is composed of the coaxial cable and the ground plane. The current loop should be removed for high sensitivity of the permeameter. The permeability of a high electrical resistivity film (CoFeHfO) has been demonstrated 1 MHz–3.5 GHz. © 1999 American Institute of Physics.

Electronic Resource

1089-7550

AIP Digital Archive

Physics

Conductivity control of the boron and phosphorus ion implanted C60 films subjected to various doses with multiple energy has been investigated. Temperature dependent conductivity shows the semiconducting nature of the B+ and P+ implanted films. Fourier transform infrared spectra of the B+ and P+ implanted C60 films show the structural change of the C60 into amorphous carbon. Optical gaps of the implanted films have been observed as a function of implantation dose. The dramatic increase in the conductivity and the reduction in the optical gap on ion implantation are thought to be attributed to an increase in sp2 bounded states, lattice damage, and substitutional impurity doping with ion implantation. The B+ and P+ implantation into C60 and amorphous carbon suggests the possibility of fabricating carbon based homojunction solar cells. © 2001 American Institute of Physics.

Electronic Resource

1089-7623

AIP Digital Archive

Physics

Electrical Engineering, Measurement and Control Technology

Impulsive stimulated Brillouin scattering is applied to a new high-resolution phonon spectroscopy, where phonons created by two crossing pump pulses are observed using diffraction of a cw probe light in both time and frequency domains. In time domain, real-time behavior can be detected sensitively using a digital oscilloscope, while in frequency domain, measurements with high resolution are attainable by means of a spherical Fabry–Perot interferometer. Several examples of the measurements on liquid samples are demonstrated for clarifying various aspects of the phonon generation by the present method: the mechanism of the generation under pulsed light irradiation, the propagation of the generated phonon, the resonance excitation, and the interference with the other nonlinear optical processes. The relation with the ordinary light scattering is also discussed.

Electronic Resource

1089-7550

AIP Digital Archive

Physics

A new concept is proposed for the microactuation based upon magnetostriction. Magnetostrictive bimorph cantilever actuators and a traveling machine, composed of the magnetostrictive amorphous Tb-Fe and Sm-Fe thin films on a polyimide substrate, were fabricated. These actuators moved without power supply cables. The 3-mm-long cantilever actuator exhibited the large deflection above 100 μm in as low a magnetic field as 300 Oe and above 500 μm at resonant frequency in an alternating magnetic field of 300 Oe. Such unique characteristics suggest that magnetostriction is useful as the driving force of the microactuator.

Electronic Resource

1089-7550

AIP Digital Archive

Physics

The electronic structure of YCo5 was calculated self-consistently by the scalar-relativistic linear muffin–tin orbital method using an atomic sphere approximation within the framework of the local spin density approximation. Using the spin–orbit interaction (SO) and orbital polarization term (OP), magnetocrystalline anisotropy energy due to 3d-electrons (3d-MAE) was calculated as a function of bandfilling q [Ea(q)]. At the Fermi level, the calculated Ea(q), including SO and OP, depended greatly on whether an f basis was used for Co. Just below the Fermi level, however, Ea(q) showed a large and c-axial 3d-MAE comparable with the experimental data. This behavior of Ea(q) is closely related to the calculated anisotropy of orbital magnetic moments and the shape of density of states of the 3d band. © 1996 American Institute of Physics.

Electronic Resource

1077-3118

AIP Digital Archive

Physics

By annealing H-rich intrinsic a-Si:H films at 340 °C in a hydrogen atmosphere, we have prepared a series of samples with varying hydrogen content (CH), but essentially constant photoconductivity, Urbach energy, and microstructure. In this way, we have been able to eliminate some of the interfering factors contributing to the light-induced effect, thus enabling the influence of CH to be determined. A strong correlation is found between the stability and CH, supporting the involvement of hydrogen in the light-induced mechanism.

Electronic Resource

1077-3118

AIP Digital Archive

Physics

Arsenic precipitation from a thin, 100-nm surface layer of GaAs grown at low temperature (LT) by molecular beam epitaxy is investigated. The precipitate depth distribution is examined for different rapid thermal annealing cycles. It is found that the precipitate distribution can tail a long distance into the underlying stoichiometric GaAs layer, depending on the peak annealing temperature. The distribution for an 800 °C anneal is virtually unaffected by a prior low temperature "soak'' at 600 °C, thus showing that the precipitation is insensitive to the initial point defect concentrations in this temperature range. The relevance of these results to the precipitation process and to the use of thin LT layers in device applications is discussed. © 1996 American Institute of Physics.

Electronic Resource

1089-7550

AIP Digital Archive

Physics

We have carried out an investigation of n+–p–p+ silicon diodes after irradiation with 1 MeV electrons and 10 MeV protons and subsequently after annealing. The effects upon the material and device parameters of samples irradiated with different particles are compared by expressing the particle fluence in terms of an effective absorbed dose of 1 MeV electrons. Although the spectrum of defects (observed by deep-level transient spectroscopy) introduced by 1 MeV electrons and 10 MeV protons was slightly different, the total defect introduction rate per effective 1 MeV electron dose was similar, as was the effect upon the device parameters. After irradiation with high fluences of electrons or protons, the effective carrier concentration in the base of the diodes was reduced dramatically, an effect referred to as "carrier removal." The effects of carrier removal upon the device parameters, in particular, the series resistance and saturation current, are discussed in detail. In addition, the relative importance of different radiation-induced defects is compared. © 1998 American Institute of Physics.

Electronic Resource