Search Results - (Author, Cooperation:M. Xie)
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1Latest Papers from Table of Contents or Articles in PressCarnicom, E. M., Xie, W., Klimczuk, T., Lin, J., Gornicka, K., Sobczak, Z., Ong, N. P., Cava, R. J.
American Association for the Advancement of Science (AAAS)
Published 2018Staff ViewPublication Date: 2018-05-05Publisher: American Association for the Advancement of Science (AAAS)Electronic ISSN: 2375-2548Topics: Natural Sciences in GeneralPublished by: -
2Latest Papers from Table of Contents or Articles in PressX. K. Zhang, J. J. Yuan, Y. M. Xie, Y. Yu, F. G. Kuang, H. J. Yu, X. R. Zhu, and H. Shen
American Physical Society (APS)
Published 2018Staff ViewPublication Date: 2018-03-06Publisher: American Physical Society (APS)Print ISSN: 1098-0121Electronic ISSN: 1095-3795Topics: PhysicsKeywords: MagnetismPublished by: -
3Latest Papers from Table of Contents or Articles in PressLiu, X., Zhao, M., Xie, Y., Li, P., Wang, O., Zhou, B., Yang, L., Nie, Y., Cheng, L., Song, X., Jin, C., Han, F.
Genetics Society of America (GSA)
Published 2018Staff ViewPublication Date: 2018-10-04Publisher: Genetics Society of America (GSA)Electronic ISSN: 2160-1836Topics: BiologyPublished by: -
4Latest Papers from Table of Contents or Articles in PressGarbacz, W. G., Uppal, H., Yan, J., Xu, M., Ren, S., Stolz, D. B., Huang, M., Xie, W.
The American Society for Pharmacology and Experimental Therapeutics (ASPET)
Published 2018Staff ViewPublication Date: 2018-08-24Publisher: The American Society for Pharmacology and Experimental Therapeutics (ASPET)Print ISSN: 0026-895XElectronic ISSN: 1521-0111Topics: Chemistry and PharmacologyMedicinePublished by: -
5Latest Papers from Table of Contents or Articles in PressS B Wang, Y Sun, J L Chen, S Wang, M J Peng, S Chen, MM Liu, J Q Hu, Y T Chen, J M Zhang, Y C Yang and M Xie
Institute of Physics (IOP)
Published 2018Staff ViewPublication Date: 2018-02-03Publisher: Institute of Physics (IOP)Print ISSN: 1757-8981Electronic ISSN: 1757-899XTopics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision MechanicsPublished by: -
6Latest Papers from Table of Contents or Articles in PressStaff View
Publication Date: 2018-05-17Publisher: Institute of Physics (IOP)Print ISSN: 1757-8981Electronic ISSN: 1757-899XTopics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision MechanicsPublished by: -
7Latest Papers from Table of Contents or Articles in PressN. Cao ; Y. Huang ; J. Zheng ; C. I. Spencer ; Y. Zhang ; J. D. Fu ; B. Nie ; M. Xie ; M. Zhang ; H. Wang ; T. Ma ; T. Xu ; G. Shi ; D. Srivastava ; S. Ding
American Association for the Advancement of Science (AAAS)
Published 2016Staff ViewPublication Date: 2016-04-30Publisher: American Association for the Advancement of Science (AAAS)Print ISSN: 0036-8075Electronic ISSN: 1095-9203Topics: BiologyChemistry and PharmacologyComputer ScienceMedicineNatural Sciences in GeneralPhysicsPublished by: -
8Latest Papers from Table of Contents or Articles in PressY. Jiang ; M. Xie ; W. Chen ; R. Talbot ; J. F. Maddox ; T. Faraut ; C. Wu ; D. M. Muzny ; Y. Li ; W. Zhang ; J. A. Stanton ; R. Brauning ; W. C. Barris ; T. Hourlier ; B. L. Aken ; S. M. Searle ; D. L. Adelson ; C. Bian ; G. R. Cam ; Y. Chen ; S. Cheng ; U. DeSilva ; K. Dixen ; Y. Dong ; G. Fan ; I. R. Franklin ; S. Fu ; P. Fuentes-Utrilla ; R. Guan ; M. A. Highland ; M. E. Holder ; G. Huang ; A. B. Ingham ; S. N. Jhangiani ; D. Kalra ; C. L. Kovar ; S. L. Lee ; W. Liu ; X. Liu ; C. Lu ; T. Lv ; T. Mathew ; S. McWilliam ; M. Menzies ; S. Pan ; D. Robelin ; B. Servin ; D. Townley ; W. Wang ; B. Wei ; S. N. White ; X. Yang ; C. Ye ; Y. Yue ; P. Zeng ; Q. Zhou ; J. B. Hansen ; K. Kristiansen ; R. A. Gibbs ; P. Flicek ; C. C. Warkup ; H. E. Jones ; V. H. Oddy ; F. W. Nicholas ; J. C. McEwan ; J. W. Kijas ; J. Wang ; K. C. Worley ; A. L. Archibald ; N. Cockett ; X. Xu ; B. P. Dalrymple
American Association for the Advancement of Science (AAAS)
Published 2014Staff ViewPublication Date: 2014-06-07Publisher: American Association for the Advancement of Science (AAAS)Print ISSN: 0036-8075Electronic ISSN: 1095-9203Topics: BiologyChemistry and PharmacologyComputer ScienceMedicineNatural Sciences in GeneralPhysicsKeywords: Amino Acid Sequence ; Animals ; Fatty Acids, Volatile/metabolism/physiology ; Gene Expression Regulation ; Genome ; Keratins, Hair-Specific/genetics ; Lipid Metabolism/genetics/*physiology ; Molecular Sequence Data ; Phylogeny ; Rumen/metabolism/*physiology ; Sheep, Domestic/classification/*genetics/*metabolism ; Transcriptome ; Wool/growth & developmentPublished by: -
9Latest Papers from Table of Contents or Articles in PressC. Kandoth ; M. D. McLellan ; F. Vandin ; K. Ye ; B. Niu ; C. Lu ; M. Xie ; Q. Zhang ; J. F. McMichael ; M. A. Wyczalkowski ; M. D. Leiserson ; C. A. Miller ; J. S. Welch ; M. J. Walter ; M. C. Wendl ; T. J. Ley ; R. K. Wilson ; B. J. Raphael ; L. Ding
Nature Publishing Group (NPG)
Published 2013Staff ViewPublication Date: 2013-10-18Publisher: Nature Publishing Group (NPG)Print ISSN: 0028-0836Electronic ISSN: 1476-4687Topics: BiologyChemistry and PharmacologyMedicineNatural Sciences in GeneralPhysicsKeywords: Carcinogenesis/*genetics ; Cell Cycle/genetics ; Clone Cells/metabolism/pathology ; Cohort Studies ; DNA Repair/genetics ; Humans ; INDEL Mutation/genetics ; Mitogen-Activated Protein Kinases/genetics ; Models, Genetic ; Mutation/*genetics ; Neoplasms/*classification/*genetics/metabolism/pathology ; Oncogenes/genetics ; Phosphatidylinositol 3-Kinases/genetics ; Point Mutation/genetics ; Receptor Protein-Tyrosine Kinases/metabolism ; Survival Analysis ; Time FactorsPublished by: -
10Latest Papers from Table of Contents or Articles in PressStaff View
Publication Date: 2018-05-31Publisher: Royal SocietyElectronic ISSN: 2054-5703Topics: Natural Sciences in GeneralKeywords: geneticsPublished by: -
11Latest Papers from Table of Contents or Articles in PressFormenti, S. C., Lee, P., Adams, S., Goldberg, J. D., Li, X., Xie, M. W., Ratikan, J. A., Felix, C., Hwang, L., Faull, K. F., Sayre, J. W., Hurvitz, S., Glaspy, J. A., Comin-Anduix, B., Demaria, S., Schaue, D., McBride, W. H.
The American Association for Cancer Research (AACR)
Published 2018Staff ViewPublication Date: 2018-06-02Publisher: The American Association for Cancer Research (AACR)Print ISSN: 1078-0432Electronic ISSN: 1557-3265Topics: MedicinePublished by: -
12Latest Papers from Table of Contents or Articles in PressBai, L., Su, X., Zhao, D., Zhang, Y., Cheng, Q., Zhang, H., Wang, S., Xie, M., Su, H.
BMJ Publishing Group
Published 2018Staff ViewPublication Date: 2018-04-13Publisher: BMJ Publishing GroupPrint ISSN: 0143-005XElectronic ISSN: 1470-2738Topics: MedicineKeywords: Public healthPublished by: -
13Latest Papers from Table of Contents or Articles in PressXu, J., Zhang, L., Xie, M., Li, Y., Huang, P., Saunders, T. L., Fox, D. A., Rosenquist, R., Lin, F.
The American Association of Immunologists (AAI)
Published 2018Staff ViewPublication Date: 2018-06-05Publisher: The American Association of Immunologists (AAI)Print ISSN: 0022-1767Electronic ISSN: 1550-6606Topics: MedicinePublished by: -
14Latest Papers from Table of Contents or Articles in PressZhang, J., Xie, M., Xia, L., Yu, T., He, F., Zhao, C., Qiu, W., Zhao, D., Liu, Y., Gong, Y., Yao, C., Liu, L., Wang, Y.
The American Association of Immunologists (AAI)
Published 2018Staff ViewPublication Date: 2018-11-20Publisher: The American Association of Immunologists (AAI)Print ISSN: 0022-1767Electronic ISSN: 1550-6606Topics: MedicinePublished by: -
15Articles: DFG German National LicensesOhtani, N. ; Mokler, S. M. ; Xie, M. H. ; Zhang, J. ; Joyce, B. A.
Woodbury, NY : American Institute of Physics (AIP)
Published 1993Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: Reflection high-energy electron diffraction intensity oscillations during gas source molecular beam epitaxy growth of Si1−xGex using disilane and germane are reported. Transient changes of the oscillation period and hence the growth rate are observed during the growth. Their origin is discussed on the basis of hydrogen desorption kinetics on the alloy surface and attributed to Ge surface segregation effects at the growth interface. This observation provides a unique opportunity for in situ investigations with monolayer-scale resolution, of Ge segregation effects in Si/Si1−xGex heterostructures.Type of Medium: Electronic ResourceURL: -
16Articles: DFG German National LicensesXie, M. H. ; Zhang, J. ; Mokler, S. M. ; Fernández, J. M. ; Joyce, B. A.
Woodbury, NY : American Institute of Physics (AIP)
Published 1994Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: Reflection high-energy electron diffraction intensity oscillations during Ge heteroepitaxy on Si(100) have been observed using a gas source molecular beam epitaxy system. Intensity oscillations can be observed over 6 ML (monolayers) of growth in the temperature range 400–650 °C. The oscillation frequency, however, varies from the first to subsequent layers and this variation is interpreted primarily as a change in the limiting growth kinetics as the surface composition changes from Si to Ge. Growth temperature and GeH4 flux dependence data indicate that the surface Ge concentration increases gradually, not abruptly, over the first several layers of deposition. Surface roughening effects which are attributed to Stranski–Krastanov type growth, are also found to contribute to the nonuniform oscillation frequency. © 1994 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
17Articles: DFG German National LicensesMokler, S. M. ; Ohtani, N. ; Xie, M. H. ; Zhang, J. ; Joyce, B. A.
Woodbury, NY : American Institute of Physics (AIP)
Published 1992Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: Using reflection-high-energy-electron-diffraction intensity oscillations the growth rate of Si1−xGex alloys at various compositions and different growth temperatures has been studied in situ. It was found that the growth rate shows a strong dependence on GeH4 flux at low temperatures (T〈600 °C), while at high temperatures (T(approximately-greater-than)600 °C) the growth rate is nearly independent of the GeH4 flux but proportional to the incident Si2H6 beam flux. In addition to the enhanced growth rate, a lower activation energy is observed in the low temperature region when compared to Si homoepitaxy from Si2H6. This suggests that surface germanium atoms act as good sites for hydrogen removal which is known to inhibit Si growth from hydride sources at low temperatures. Above 600 °C, however, surface hydrogen is desorbed thermally and the addition of GeH4 has little effect on the growth rate.Type of Medium: Electronic ResourceURL: -
18Articles: DFG German National LicensesXie, M. H. ; Zheng, L. X. ; Cheung, S. H. ; Ng, Y. F. ; Wu, Huasheng ; Tong, S. Y.
Woodbury, NY : American Institute of Physics (AIP)
Published 2000Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: We observe a significant reduction of threading dislocations in GaN grown on vicinal substrates of SiC(0001). Using scanning tunneling microscopy, we find films grown on vicinal substrates maintain the surface misorientation of the substrate and display terraces with straight edges. On top of the terraces there is no spiral mound, which is the main feature found for films grown on singular substrates. Transmission electron microscopy studies confirm that threading screw dislocations are reduced by two orders of magnitude while edge dislocations are reduced by one order. © 2000 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
19Articles: DFG German National LicensesXu, S. J. ; Wang, H. ; Li, Q. ; Xie, M. H.
Woodbury, NY : American Institute of Physics (AIP)
Published 2000Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: We report on the characterization of thermally induced interdiffusion in InAs/GaAs quantum-dot superlattices with high-resolution x-ray diffraction and photoluminescence techniques. The dynamical theory is employed to simulate the measured x-ray diffraction rocking curves of the InAs/GaAs quantum-dot superlattices annealed at different temperatures. Excellent agreement between the experimental curves and the simulations is achieved when the composition, thickness, and stress variations caused by interdiffusion are taken in account. It is found that the significant In–Ga intermixing occurs even in the as-grown InAs/GaAs quantum dots. The diffusion coefficients at different temperatures are estimated. © 2000 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
20Articles: DFG German National LicensesLi, Q. ; Xu, S. J. ; Cheng, W. C. ; Xie, M. H. ; Tong, S. Y.
Woodbury, NY : American Institute of Physics (AIP)
Published 2001Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: Temperature-dependent photoluminescence measurements have been carried out in zinc-blende InGaN epilayers grown on GaAs substrates by metalorganic vapor-phase epitaxy. An anomalous temperature dependence of the peak position of the luminescence band was observed. Considering thermal activation and the transfer of excitons localized at different potential minima, we employed a model to explain the observed behavior. A good agreement between the theory and the experiment is achieved. At high temperatures, the model can be approximated to the band-tail-state emission model proposed by Eliseev et al. [Appl. Phys. Lett. 71, 569 (1997)]. © 2001 American Institute of Physics.Type of Medium: Electronic ResourceURL: