Search Results - (Author, Cooperation:M. S. Sherwin)
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1Latest Papers from Table of Contents or Articles in PressF. Langer ; M. Hohenleutner ; C. P. Schmid ; C. Poellmann ; P. Nagler ; T. Korn ; C. Schuller ; M. S. Sherwin ; U. Huttner ; J. T. Steiner ; S. W. Koch ; M. Kira ; R. Huber
Nature Publishing Group (NPG)
Published 2016Staff ViewPublication Date: 2016-05-14Publisher: Nature Publishing Group (NPG)Print ISSN: 0028-0836Electronic ISSN: 1476-4687Topics: BiologyChemistry and PharmacologyMedicineNatural Sciences in GeneralPhysicsPublished by: -
2Latest Papers from Table of Contents or Articles in PressS. Takahashi ; L. C. Brunel ; D. T. Edwards ; J. van Tol ; G. Ramian ; S. Han ; M. S. Sherwin
Nature Publishing Group (NPG)
Published 2012Staff ViewPublication Date: 2012-09-22Publisher: Nature Publishing Group (NPG)Print ISSN: 0028-0836Electronic ISSN: 1476-4687Topics: BiologyChemistry and PharmacologyMedicineNatural Sciences in GeneralPhysicsKeywords: Allyl Compounds/chemistry ; Benzene/chemistry ; Cyclic N-Oxides/chemistry ; Diamond/chemistry ; Electron Spin Resonance Spectroscopy/*instrumentation/*methods ; *Electrons ; Fourier Analysis ; Free Radicals/chemistry ; *Lasers ; Nitrogen Oxides/chemistry ; Temperature ; Time FactorsPublished by: -
3Latest Papers from Table of Contents or Articles in PressStaff View
Publication Date: 2012-03-31Publisher: Nature Publishing Group (NPG)Print ISSN: 0028-0836Electronic ISSN: 1476-4687Topics: BiologyChemistry and PharmacologyMedicineNatural Sciences in GeneralPhysicsPublished by: -
4Articles: DFG German National LicensesHeyman, J. N. ; Unterrainer, K. ; Craig, K. ; Williams, J. ; Sherwin, M. S. ; Campman, K. ; Hopkins, P. F. ; Gossard, A. C. ; Murdin, B. N. ; Langerak, C. J. G. M.
Woodbury, NY : American Institute of Physics (AIP)
Published 1996Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: We report pump-and-probe measurements of the electron intersubband lifetime (T1) in an AlGaAs/GaAs heterostructure using a picosecond pulsed far-infrared laser. The subband spacing (11 meV) is less than the optical-phonon energy. Time-resolved measurements yield intersubband lifetimes ranging from T1=1.1±0.2 ns to T1=0.4±0.1 ns depending on measurement conditions. Results are in agreement with previous lifetime measurements on the same sample using continuous excitation at intensities ≤1 W/cm2. The steady-state measurements yielded shorter lifetimes at high excitation intensities, possibly due to carrier heating leading to intersubband scattering by optical phonon emission. © 1996 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
5Articles: DFG German National LicensesPlombon, J. J. ; Bewley, W. W. ; Felix, C. L. ; Sherwin, M. S. ; Hopkins, P. ; Sundaram, M. ; Gossard, A. C.
Woodbury, NY : American Institute of Physics (AIP)
Published 1992Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: Intense radiation with photon energy of a few meV can induce the capture of electrons by DX centers in AlxGa1−xAs:Si.Type of Medium: Electronic ResourceURL: -
6Articles: DFG German National LicensesAsmar, N. G. ; Cerne, J. ; Markelz, A. G. ; Gwinn, E. G. ; Sherwin, M. S. ; Campman, K. L. ; Gossard, A. C.
Woodbury, NY : American Institute of Physics (AIP)
Published 1996Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: We use photoluminescence to study the time-average energy distribution of electrons in the presence of strong steady-state drive at terahertz (THz) frequencies, in a modulation-doped 125 A(ring) AlGaAs/GaAs square well that is held at low lattice temperature TL. We find that the energy distribution can be characterized by an effective electron temperature, Te((approximately-greater-than)TL), that agrees well with values estimated from the THz-illuminated, dc conductivity. This agreement indicates that under strong THz drive, LO phonon scattering dominates both energy and momentum relaxation; that the carrier distribution maintains a heated, thermal form; and that phonon drift effects are negligible. © 1996 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
7Articles: DFG German National LicensesBoucaud, P. ; Williams, J. B. ; Gill, K. S. ; Sherwin, M. S.
Woodbury, NY : American Institute of Physics (AIP)
Published 2000Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: We have studied terahertz absorption of samples containing two layers of self-aligned, self-assembled InAs quantum dots separated by a thin GaAs barrier. The vertically coupled dots were charged with electrons by applying a voltage bias between a metal gate and a doped layer beneath the dots. For a positive gate bias corresponding to flatband conditions, an absorption peak was observed near 10 meV (2.4 THz). The absorption is attributed to the inhomogeneously broadened transition between the quantum mechanically split levels (bonding and antibonding states) in the vertically coupled quantum dots. © 2000 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
8Articles: DFG German National LicensesHegmann, F. A. ; Williams, J. B. ; Cole, B. ; Sherwin, M. S.
Woodbury, NY : American Institute of Physics (AIP)
Published 2000Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: Picosecond to nanosecond-wide terahertz pulses are used to study the fast photoresponse of a gallium-doped germanium (Ge:Ga) photoconductor operating at 4.2 K. A recombination time of about 2 ns is observed in the time-resolved photoresponse. Laser-activated semiconductor reflection switches are used to "slice" the variable-width terahertz pulses from the quasicontinuous-wave output of a free-electron laser. © 2000 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
9Articles: DFG German National LicensesBoucaud, P. ; Gill, K. S. ; Williams, J. B. ; Sherwin, M. S.
Woodbury, NY : American Institute of Physics (AIP)
Published 2000Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: We have investigated the far-infrared absorption in InAs/GaAs quantum dot molecules. The quantum dot molecules consist of two vertically coupled InAs self-assembled quantum dots separated by a GaAs barrier. The electronic coupling between the dot states results in an intraband absorption at THz frequencies. We show that this absorption can be bleached under high excitation intensity delivered by a free-electron laser. The saturation intensity is found to be on the order of 1 W cm−2. The electron relaxation time T1 is estimated from the saturation intensity. A lower limit for T1 of the order of 30 ps is deduced. © 2000 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
10Articles: DFG German National LicensesCole, B. E. ; Williams, J. B. ; King, B. T. ; Sherwin, M. S. ; Stanley, C. R.
[s.l.] : Macmillian Magazines Ltd.
Published 2001Staff ViewISSN: 1476-4687Source: Nature Archives 1869 - 2009Topics: BiologyChemistry and PharmacologyMedicineNatural Sciences in GeneralPhysicsNotes: [Auszug] Quantum bits (qubits) are the fundamental building blocks of quantum information processors, such as quantum computers. A qubit comprises a pair of well characterized quantum states that can in principle be manipulated quickly compared to the time it takes them to decohere by coupling to their ...Type of Medium: Electronic ResourceURL: