Search Results - (Author, Cooperation:M. Law)

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  1. 1
  2. 2
  3. 3
    Staff View
    Publication Date:
    2018-07-28
    Publisher:
    The American Society for Microbiology (ASM)
    Print ISSN:
    0066-4804
    Electronic ISSN:
    1098-6596
    Topics:
    Biology
    Medicine
    Published by:
    Latest Papers from Table of Contents or Articles in Press
  4. 4
    L. Kong ; E. Giang ; T. Nieusma ; R. U. Kadam ; K. E. Cogburn ; Y. Hua ; X. Dai ; R. L. Stanfield ; D. R. Burton ; A. B. Ward ; I. A. Wilson ; M. Law
    American Association for the Advancement of Science (AAAS)
    Published 2013
    Staff View
    Publication Date:
    2013-11-30
    Publisher:
    American Association for the Advancement of Science (AAAS)
    Print ISSN:
    0036-8075
    Electronic ISSN:
    1095-9203
    Topics:
    Biology
    Chemistry and Pharmacology
    Computer Science
    Medicine
    Natural Sciences in General
    Physics
    Keywords:
    Antibodies, Neutralizing/chemistry ; Antigens, CD81/chemistry ; Antiviral Agents/chemistry ; Binding Sites ; Crystallography, X-Ray ; Drug Design ; Epitopes/chemistry/genetics ; Humans ; Immunoglobulin Fab Fragments/chemistry ; Mutagenesis, Site-Directed ; Protein Folding ; Protein Structure, Tertiary ; Viral Envelope Proteins/*chemistry/immunology ; Viral Hepatitis Vaccines/chemistry/immunology
    Published by:
    Latest Papers from Table of Contents or Articles in Press
  5. 5
    Staff View
    Publication Date:
    2012-08-28
    Publisher:
    American Association for the Advancement of Science (AAAS)
    Print ISSN:
    0036-8075
    Electronic ISSN:
    1095-9203
    Topics:
    Biology
    Chemistry and Pharmacology
    Computer Science
    Medicine
    Natural Sciences in General
    Physics
    Published by:
    Latest Papers from Table of Contents or Articles in Press
  6. 6
    A. Pardo-Saganta ; P. R. Tata ; B. M. Law ; B. Saez ; R. Chow ; M. Prabhu ; T. Gridley ; J. Rajagopal
    Nature Publishing Group (NPG)
    Published 2015
    Staff View
    Publication Date:
    2015-07-07
    Publisher:
    Nature Publishing Group (NPG)
    Print ISSN:
    0028-0836
    Electronic ISSN:
    1476-4687
    Topics:
    Biology
    Chemistry and Pharmacology
    Medicine
    Natural Sciences in General
    Physics
    Keywords:
    Animals ; Cell Communication ; Cell Differentiation ; Cell Division ; Cilia/metabolism ; Female ; Male ; Membrane Proteins/metabolism ; Mice ; Receptor, Notch2/metabolism ; Signal Transduction ; Stem Cell Niche/*physiology ; Stem Cells/*cytology/metabolism/secretion ; Trachea/cytology
    Published by:
    Latest Papers from Table of Contents or Articles in Press
  7. 7
  8. 8
    Staff View
    Publication Date:
    2011-12-16
    Publisher:
    Nature Publishing Group (NPG)
    Print ISSN:
    0028-0836
    Electronic ISSN:
    1476-4687
    Topics:
    Biology
    Chemistry and Pharmacology
    Medicine
    Natural Sciences in General
    Physics
    Published by:
    Latest Papers from Table of Contents or Articles in Press
  9. 9
    Staff View
    Publication Date:
    2011-12-16
    Publisher:
    Nature Publishing Group (NPG)
    Print ISSN:
    0028-0836
    Electronic ISSN:
    1476-4687
    Topics:
    Biology
    Chemistry and Pharmacology
    Medicine
    Natural Sciences in General
    Physics
    Published by:
    Latest Papers from Table of Contents or Articles in Press
  10. 10
    Staff View
    Publication Date:
    2011-06-10
    Publisher:
    Nature Publishing Group (NPG)
    Print ISSN:
    0028-0836
    Electronic ISSN:
    1476-4687
    Topics:
    Biology
    Chemistry and Pharmacology
    Medicine
    Natural Sciences in General
    Physics
    Published by:
    Latest Papers from Table of Contents or Articles in Press
  11. 11
    Staff View
    Publication Date:
    2013-08-02
    Publisher:
    Nature Publishing Group (NPG)
    Print ISSN:
    0028-0836
    Electronic ISSN:
    1476-4687
    Topics:
    Biology
    Chemistry and Pharmacology
    Medicine
    Natural Sciences in General
    Physics
    Keywords:
    Animals ; Antigens, CD81/genetics/metabolism ; Cell Line ; Cyclophilin A/genetics/metabolism ; *Disease Models, Animal ; *Genetic Engineering ; Hepacivirus/immunology/*physiology ; Hepatitis C/*genetics/immunology/*virology ; Humans ; Mice ; Mice, Inbred C57BL ; Mice, Transgenic ; Occludin/genetics/metabolism ; STAT1 Transcription Factor/deficiency ; Viremia/virology ; Virion/growth & development/physiology ; *Virus Replication
    Published by:
    Latest Papers from Table of Contents or Articles in Press
  12. 12
    Staff View
    Publication Date:
    2011-06-10
    Publisher:
    Nature Publishing Group (NPG)
    Print ISSN:
    0028-0836
    Electronic ISSN:
    1476-4687
    Topics:
    Biology
    Chemistry and Pharmacology
    Medicine
    Natural Sciences in General
    Physics
    Keywords:
    Adenoviridae/genetics/physiology ; Animals ; Antibodies, Blocking/immunology ; Antigens, CD/genetics/metabolism ; Antigens, CD81 ; Cells, Cultured ; Claudin-1 ; *Disease Models, Animal ; Genotype ; Hepacivirus/genetics/metabolism/*physiology ; Hepatitis C/*genetics/*virology ; Hepatocytes/cytology/*metabolism/*virology ; Humans ; Immunization, Passive ; Membrane Proteins/genetics/metabolism ; Mice ; Receptors, Virus/genetics/metabolism ; Scavenger Receptors, Class B/genetics/metabolism ; Transfection ; Viral Tropism
    Published by:
    Latest Papers from Table of Contents or Articles in Press
  13. 13
    P. R. Tata ; H. Mou ; A. Pardo-Saganta ; R. Zhao ; M. Prabhu ; B. M. Law ; V. Vinarsky ; J. L. Cho ; S. Breton ; A. Sahay ; B. D. Medoff ; J. Rajagopal
    Nature Publishing Group (NPG)
    Published 2013
    Staff View
    Publication Date:
    2013-11-08
    Publisher:
    Nature Publishing Group (NPG)
    Print ISSN:
    0028-0836
    Electronic ISSN:
    1476-4687
    Topics:
    Biology
    Chemistry and Pharmacology
    Medicine
    Natural Sciences in General
    Physics
    Keywords:
    Animals ; Antineoplastic Agents, Hormonal/pharmacology ; *Cell Dedifferentiation ; Cell Proliferation/drug effects ; Cell Survival ; Cells, Cultured ; Doxycycline/pharmacology ; Epithelial Cells/*cytology/drug effects ; Female ; Male ; Mice, Transgenic ; Stem Cells/*cytology/drug effects ; Tamoxifen/pharmacology
    Published by:
    Latest Papers from Table of Contents or Articles in Press
  14. 14
    Meng, H. L. ; Prussin, S. ; Law, M. E. ; Jones, K. S.

    [S.l.] : American Institute of Physics (AIP)
    Published 1993
    Staff View
    ISSN:
    1089-7550
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    Short-time/low-temperature thermal oxidation is known to lead to point defect perturbations in silicon. This study investigates the interaction between oxidation-induced point defects and type II dislocation loops intentionally introduced in silicon via ion implantation. The type II (end-of-range) dislocation loops were introduced via implantation of either Si+ ions at 50 keV or Ge+ ions at 100 keV into 〈100(approximately-greater-than)Si wafers at doses ranging from 2×1015 to 1×1016/cm2. Furnace anneals were done at 900 °C for times between 30 min and 4 h in both a dry oxygen and nitrogen ambient. The change in atom concentration bound by dislocation loops as a result of oxidation was measured by plan-view transmission electron microscopy. The results show type II dislocation loops can be used as point defect detectors. When Ge+ implantation was used to form the dislocation loops, a decrease in trapped atom concentration relative to the control was observed upon oxidation. These results imply that oxidation of high dose Ge+ implanted silicon results either in vacancy injection or provides an excellent sink for interstitials. It is also shown that when Si+ implantation is used to form the dislocation loops, the measured net interstitial flux trapped by dislocation loops is linearly proportional to the total supersaturation of interstitials determined by oxidation-enhanced diffusion studies done by Packan and Plummer [J. Appl. Phys. 68, 4327 (1990)].
    Type of Medium:
    Electronic Resource
    URL:
    Articles: DFG German National Licenses
  15. 15
    Law, M. E. ; Haddara, Y. M. ; Jones, K. S.

    [S.l.] : American Institute of Physics (AIP)
    Published 1998
    Staff View
    ISSN:
    1089-7550
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    Interstitials can recombine at an oxide/silicon interface. Previous experimental work produces contradictory results. Transient enhanced diffusion experiments suggest a nearly infinite surface recombination rate, while oxidation enhanced diffusion suggests a much weaker recombination rate. A di-interstitial mechanism is investigated, and analytic solutions are developed. This is compared to the more commonly used interstitial mechanism. The di-interstitial mechanism can account for most of the discrepancy in the data. © 1998 American Institute of Physics.
    Type of Medium:
    Electronic Resource
    URL:
    Articles: DFG German National Licenses
  16. 16
    Law, M. ; Teplicky, R. ; King, S. ; King, G. ; Kertoy, M. ; Moning, T. ; Rosenbaum, P. ; Burke-Gaffney, J.

    Oxford, UK : Blackwell Science Ltd
    Published 2005
    Staff View
    ISSN:
    1365-2214
    Source:
    Blackwell Publishing Journal Backfiles 1879-2005
    Topics:
    Medicine
    Psychology
    Notes:
    Background  With parents more involved in their child's day-to-day care, concepts of family-centred service (FCS) are increasingly adopted in children's health and rehabilitation service organizations.Methods  In this paper, we report the results of a study to develop and evaluate educational materials for parents, service providers and health sciences students about FCS. The materials focus on the nature and philosophy of FCS, and the practical skills and systemic changes required for its implementation.Results  Thirty-six participants (12 families, 12 service providers and 12 rehabilitation science students) were randomly assigned to receive one of the six FCS educational packages, each containing three FCS educational sheets. Participants’ ratings of the format and content, and the impact of the FCS Sheets were very high, with overall means above 5.0 on a 7-point scale. Using a mixed model analysis, we found significant differences in participants’ ratings of familiarity with the materials (students were less familiar than service providers). After statistical adjustment for familiarity, there were no significant differences between the groups or the packages on ratings of format and content or impact.Conclusions  There were no significant differences in the way in which the participant groups rated the impact of the FCS Sheets and the specific packages did not have an effect on the participants’ ratings. The FCS educational materials, even those less familiar to participants, were rated highly on format and content, and impact. Results indicate that the material was perceived to be important to each group, and was formatted and written in a way that was easy to understand. This finding counters current recommendations in the knowledge transfer literature that suggest different versions should be written for different target groups.
    Type of Medium:
    Electronic Resource
    URL:
    Articles: DFG German National Licenses
  17. 17
    Law, M. ; Hanna, S. ; King, G. ; Hurley, P. ; King, S. ; Kertoy, M. ; Rosenbaum, P.

    Oxford, UK : Blackwell Science Ltd
    Published 2003
    Staff View
    ISSN:
    1365-2214
    Source:
    Blackwell Publishing Journal Backfiles 1879-2005
    Topics:
    Medicine
    Psychology
    Notes:
    Background  The provision of family-centred services (FCS) emphasizes a partnership between parents and service providers so that families are involved in every aspect of services for their child. There is evidence that providing FCS is associated with improvements in parents’ satisfaction with services, decreased parental stress, and positive child outcomes.Methods  The purpose of this study was to examine factors that are most important in determining parent perceptions of the family centredness of care and parent satisfaction with service. A cross-sectional survey was completed by 494 parents, 324 service providers, and 15 CEOs from 16 organizations delivering children's rehabilitation services. Analyses were completed using a structural equation modelling approach.Results  Survey return rates ranged from 77 to 94%. Findings indicate that the principal determinants of parent satisfaction with services are the family-centred culture at the organization and parent perceptions of FCS. Parent satisfaction with services was also influenced by the number of places where services were received and the number of health and development problems experienced by their child.Conclusion  Parent satisfaction with services is strongly influenced by the perception that services are more family centred, fewer places where services were received and fewer health and development problems for their child. Ways in which organizations can improve satisfaction through carrying out family-centred behaviours are discussed.
    Type of Medium:
    Electronic Resource
    URL:
    Articles: DFG German National Licenses
  18. 18
    Listebarger, J. K. ; Robinson, H. G. ; Jones, K. S. ; Law, M. E. ; Sieloff, D. D. ; Slinkman, J. A. ; Sedgwick, T. O.

    [S.l.] : American Institute of Physics (AIP)
    Published 1995
    Staff View
    ISSN:
    1089-7550
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    A boron doped epilayer was used to investigate the interaction between end of range dislocation loops (formed from Ge+ implantation) and excess point defects generated from a low dose 1014/cm2 B+ implant into silicon. The boron doping spike was grown in by chemical vapor deposition at a depth of 8000 A(ring) below the surface. The intrinsic diffusivity of the boron in the doped epilayer was determined by simply annealing the as-grown layer. The end of range (type II) dislocation loops were created using two overlapping room-temperature Ge+ implants of 75 and 190 keV each at a dose of 1×1015/cm2. Upon annealing the amorphous layer regrew and a layer of type II dislocation loops formed ∼2300 A(ring) deep at a density of ∼8×1010/cm2. The enhancement in the buried boron layer diffusivity due to the type II loop forming Ge+ implant was observed to increase approximately between 2.5 and 5 min from 1500× to a value 2500× above the intrinsic diffusivity before dropping back to intrinsic levels after 30 min at 800 °C. A low-energy (8 keV) 1×1014/cm2 B+ (Rp=320 A(ring)) implant into material without loops resulted in an average enhancement of 1540× in boron epilayer diffusivity after 2.5 min at 800 °C. The enhancement dropped down to intrinsic diffusivity levels after 5 min at 800 °C. When a layer of loops was introduced and annealed prior to and deeper than a subsequent low-energy B+ implant, annealing of the B+ implant produced no measurable enhancement in the buried B layer diffusivity. Taken together this imples that the interaction kinetics between the dislocation loop layer and the damage induced interstitials are primarily diffusion limited and the loops are absorbing a significant fraction of the interstitials produced by the low-energy B+ implant. © 1995 American Institute of Physics.
    Type of Medium:
    Electronic Resource
    URL:
    Articles: DFG German National Licenses
  19. 19
    Dokumaci, O. ; Rousseau, P. ; Luning, S. ; Krishnamoorthy, V. ; Jones, K. S. ; Law, M. E.

    [S.l.] : American Institute of Physics (AIP)
    Published 1995
    Staff View
    ISSN:
    1089-7550
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    The extended defects in laser activated and subsequently thermally annealed high concentration arsenic layers have been investigated in a range of surface concentrations from 2.3×1020 to 1.9×1021 As/cm3 with transmission electron microscopy. We observe a rapid change in the density of dislocation loops with dose which is indicative of a homogeneous nucleation mechanism. The number of atoms bound by the defects is insufficient to account directly for all of the inactive arsenic. The defects lie uniformly inside the As layer up to the junction depth, which suggests that As inactive complexes are aiding the loop formation. Our results support the proposition that arsenic deactivation injects silicon interstitials. © 1995 American Institute of Physics.
    Type of Medium:
    Electronic Resource
    URL:
    Articles: DFG German National Licenses
  20. 20
    Lilak, A. D. ; Earles, S. K. ; Law, M. E. ; Jones, K. S.

    Woodbury, NY : American Institute of Physics (AIP)
    Published 1999
    Staff View
    ISSN:
    1077-3118
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    Boron-doped well structures formed in Czochralski silicon are subjected to a self-implant and various anneals to form a population of type {311} defects. Quantitative transmission electron microscopy is then used to measure the residual interstitials trapped in the {311} defects as a function of boron concentration and anneal temperature. We have found a strong tendency for increased dissolution rates of {311} type defects at boron concentrations above 1018 cm−3, providing direct evidence for the formation of boron–interstitial clusters. By profiling the samples with secondary ion mass steptroscopy and comparing the results to spreading resistance measurements the degree of deactivation can be determined. © 1999 American Institute of Physics.
    Type of Medium:
    Electronic Resource
    URL:
    Articles: DFG German National Licenses