Search Results - (Author, Cooperation:M. Kasu)

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  1. 1
    X. Zhu ; S. Saito ; A. Kemp ; K. Kakuyanagi ; S. Karimoto ; H. Nakano ; W. J. Munro ; Y. Tokura ; M. S. Everitt ; K. Nemoto ; M. Kasu ; N. Mizuochi ; K. Semba
    Nature Publishing Group (NPG)
    Published 2011
    Staff View
    Publication Date:
    2011-10-14
    Publisher:
    Nature Publishing Group (NPG)
    Print ISSN:
    0028-0836
    Electronic ISSN:
    1476-4687
    Topics:
    Biology
    Chemistry and Pharmacology
    Medicine
    Natural Sciences in General
    Physics
    Published by:
    http://www.nature.com/

    Latest Papers from Table of Contents or Articles in Press
  2. 2
    Kasu, M. ; Makimoto, T. ; Kobayashi, N.

    Woodbury, NY : American Institute of Physics (AIP)
    Published 1996
    Staff View
    ISSN:
    1077-3118
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    We have studied GaAs (001) surfaces passivated with nitrogen (N) radicals at submonolayer N coverage mainly using scanning tunneling microscopy and transmission electron microscopy. We determined that GaN-rich regions are elongated in the [1¯10] direction, suggesting that N passivation proceeds in the [1¯10] direction. This can be explained in terms of minimization of the tensile strains in the [110] direction induced when the supplied N atoms replace first-layer As atoms on the (2×4) surface. © 1996 American Institute of Physics.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.116110

    Articles: DFG German National Licenses
  3. 3
    Kasu, M. ; Kobayashi, N.

    Woodbury, NY : American Institute of Physics (AIP)
    Published 1998
    Staff View
    ISSN:
    1077-3118
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    The adsorption of nitrogen (N) radicals (nitridation) on InAs (001) surfaces has been studied by ultrahigh-vacuum scanning tunneling microscopy and x-ray photoelectronic spectroscopy. The nitridation proceeds as Langmuir adsorption. The N adsorption at 350 °C is faster than that at 100 °C, but N adsorption rates at 100 °C on InAs and GaAs are almost the same. These results are explained as follows: at 350 °C, N radicals bond mainly with the topmost In atoms on an In-stabilized surface, and at 100 °C, N radicals replace As atoms in the topmost layer on an As-stabilized surface, and subsequently bond with In atoms in the second layer. The amorphous 100 °C nitrided surface layer is found to have an insulating characteristic without surface states. © 1998 American Institute of Physics.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.122884

    Articles: DFG German National Licenses
  4. 4
    Staff View
    ISSN:
    0022-0248
    Source:
    Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics:
    Chemistry and Pharmacology
    Geosciences
    Physics
    Type of Medium:
    Electronic Resource
    URL:
    http://linkinghub.elsevier.com/retrieve/pii/0022-0248(93)90792-U

    Articles: DFG German National Licenses
  5. 5
    Fukui, T. ; Saito, H. ; Kasu, M. ; Ando, S.

    Amsterdam : Elsevier
    Staff View
    ISSN:
    0022-0248
    Source:
    Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics:
    Chemistry and Pharmacology
    Geosciences
    Physics
    Type of Medium:
    Electronic Resource
    URL:
    http://linkinghub.elsevier.com/retrieve/pii/0022-0248(92)90505-D

    Articles: DFG German National Licenses
  6. 6
    Kasu, M. ; Saito, H. ; Fukui, T.

    Amsterdam : Elsevier
    Staff View
    ISSN:
    0022-0248
    Source:
    Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics:
    Chemistry and Pharmacology
    Geosciences
    Physics
    Type of Medium:
    Electronic Resource
    URL:
    http://linkinghub.elsevier.com/retrieve/pii/0022-0248(91)90776-2

    Articles: DFG German National Licenses
  7. 7
    Kasu, M. ; Kobayashi, N.

    Amsterdam : Elsevier
    Staff View
    ISSN:
    0022-0248
    Source:
    Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics:
    Chemistry and Pharmacology
    Geosciences
    Physics
    Type of Medium:
    Electronic Resource
    URL:
    http://linkinghub.elsevier.com/retrieve/pii/0022-0248(94)91038-3

    Articles: DFG German National Licenses
  8. 8
    Fukui, T. ; Tsubaki, K. ; Saito, H. ; Kasu, M. ; Honda, T.

    Amsterdam : Elsevier
    Staff View
    ISSN:
    0039-6028
    Source:
    Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics:
    Physics
    Type of Medium:
    Electronic Resource
    URL:
    http://linkinghub.elsevier.com/retrieve/pii/0039-6028(92)91206-Q

    Articles: DFG German National Licenses