Search Results - (Author, Cooperation:M. Ikeda)

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  1. 1
    Staff View
    Publication Date:
    2015-04-10
    Publisher:
    Nature Publishing Group (NPG)
    Print ISSN:
    0028-0836
    Electronic ISSN:
    1476-4687
    Topics:
    Biology
    Chemistry and Pharmacology
    Medicine
    Natural Sciences in General
    Physics
    Keywords:
    Amino Acid Sequence ; Binding Sites ; Crystallography, X-Ray ; Histidine/chemistry/metabolism ; Humans ; Models, Molecular ; Molecular Sequence Data ; Protein Conformation ; Receptors, Adiponectin/*chemistry/metabolism ; Structure-Activity Relationship ; Zinc/metabolism
    Published by:
    http://www.nature.com/

    Latest Papers from Table of Contents or Articles in Press
  2. 2
    D. P. Hibar ; J. L. Stein ; M. E. Renteria ; A. Arias-Vasquez ; S. Desrivieres ; N. Jahanshad ; R. Toro ; K. Wittfeld ; L. Abramovic ; M. Andersson ; B. S. Aribisala ; N. J. Armstrong ; M. Bernard ; M. M. Bohlken ; M. P. Boks ; J. Bralten ; A. A. Brown ; M. M. Chakravarty ; Q. Chen ; C. R. Ching ; G. Cuellar-Partida ; A. den Braber ; S. Giddaluru ; A. L. Goldman ; O. Grimm ; T. Guadalupe ; J. Hass ; G. Woldehawariat ; A. J. Holmes ; M. Hoogman ; D. Janowitz ; T. Jia ; S. Kim ; M. Klein ; B. Kraemer ; P. H. Lee ; L. M. Olde Loohuis ; M. Luciano ; C. Macare ; K. A. Mather ; M. Mattheisen ; Y. Milaneschi ; K. Nho ; M. Papmeyer ; A. Ramasamy ; S. L. Risacher ; R. Roiz-Santianez ; E. J. Rose ; A. Salami ; P. G. Samann ; L. Schmaal ; A. J. Schork ; J. Shin ; L. T. Strike ; A. Teumer ; M. M. van Donkelaar ; K. R. van Eijk ; R. K. Walters ; L. T. Westlye ; C. D. Whelan ; A. M. Winkler ; M. P. Zwiers ; S. Alhusaini ; L. Athanasiu ; S. Ehrlich ; M. M. Hakobjan ; C. B. Hartberg ; U. K. Haukvik ; A. J. Heister ; D. Hoehn ; D. Kasperaviciute ; D. C. Liewald ; L. M. Lopez ; R. R. Makkinje ; M. Matarin ; M. A. Naber ; D. R. McKay ; M. Needham ; A. C. Nugent ; B. Putz ; N. A. Royle ; L. Shen ; E. Sprooten ; D. Trabzuni ; S. S. van der Marel ; K. J. van Hulzen ; E. Walton ; C. Wolf ; L. Almasy ; D. Ames ; S. Arepalli ; A. A. Assareh ; M. E. Bastin ; H. Brodaty ; K. B. Bulayeva ; M. A. Carless ; S. Cichon ; A. Corvin ; J. E. Curran ; M. Czisch ; G. I. de Zubicaray ; A. Dillman ; R. Duggirala ; T. D. Dyer ; S. Erk ; I. O. Fedko ; L. Ferrucci ; T. M. Foroud ; P. T. Fox ; M. Fukunaga ; J. R. Gibbs ; H. H. Goring ; R. C. Green ; S. Guelfi ; N. K. Hansell ; C. A. Hartman ; K. Hegenscheid ; A. Heinz ; D. G. Hernandez ; D. J. Heslenfeld ; P. J. Hoekstra ; F. Holsboer ; G. Homuth ; J. J. Hottenga ; M. Ikeda ; C. R. Jack, Jr. ; M. Jenkinson ; R. Johnson ; R. Kanai ; M. Keil ; J. W. Kent, Jr. ; P. Kochunov ; J. B. Kwok ; S. M. Lawrie ; X. Liu ; D. L. Longo ; K. L. McMahon ; E. Meisenzahl ; I. Melle ; S. Mohnke ; G. W. Montgomery ; J. C. Mostert ; T. W. Muhleisen ; M. A. Nalls ; T. E. Nichols ; L. G. Nilsson ; M. M. Nothen ; K. Ohi ; R. L. Olvera ; R. Perez-Iglesias ; G. B. Pike ; S. G. Potkin ; I. Reinvang ; S. Reppermund ; M. Rietschel ; N. Romanczuk-Seiferth ; G. D. Rosen ; D. Rujescu ; K. Schnell ; P. R. Schofield ; C. Smith ; V. M. Steen ; J. E. Sussmann ; A. Thalamuthu ; A. W. Toga ; B. J. Traynor ; J. Troncoso ; J. A. Turner ; M. C. Valdes Hernandez ; D. van 't Ent ; M. van der Brug ; N. J. van der Wee ; M. J. van Tol ; D. J. Veltman ; T. H. Wassink ; E. Westman ; R. H. Zielke ; A. B. Zonderman ; D. G. Ashbrook ; R. Hager ; L. Lu ; F. J. McMahon ; D. W. Morris ; R. W. Williams ; H. G. Brunner ; R. L. Buckner ; J. K. Buitelaar ; W. Cahn ; V. D. Calhoun ; G. L. Cavalleri ; B. Crespo-Facorro ; A. M. Dale ; G. E. Davies ; N. Delanty ; C. Depondt ; S. Djurovic ; W. C. Drevets ; T. Espeseth ; R. L. Gollub ; B. C. Ho ; W. Hoffmann ; N. Hosten ; R. S. Kahn ; S. Le Hellard ; A. Meyer-Lindenberg ; B. Muller-Myhsok ; M. Nauck ; L. Nyberg ; M. Pandolfo ; B. W. Penninx ; J. L. Roffman ; S. M. Sisodiya ; J. W. Smoller ; H. van Bokhoven ; N. E. van Haren ; H. Volzke ; H. Walter ; M. W. Weiner ; W. Wen ; T. White ; I. Agartz ; O. A. Andreassen ; J. Blangero ; D. I. Boomsma ; R. M. Brouwer ; D. M. Cannon ; M. R. Cookson ; E. J. de Geus ; I. J. Deary ; G. Donohoe ; G. Fernandez ; S. E. Fisher ; C. Francks ; D. C. Glahn ; H. J. Grabe ; O. Gruber ; J. Hardy ; R. Hashimoto ; H. E. Hulshoff Pol ; E. G. Jonsson ; I. Kloszewska ; S. Lovestone ; V. S. Mattay ; P. Mecocci ; C. McDonald ; A. M. McIntosh ; R. A. Ophoff ; T. Paus ; Z. Pausova ; M. Ryten ; P. S. Sachdev ; A. J. Saykin ; A. Simmons ; A. Singleton ; H. Soininen ; J. M. Wardlaw ; M. E. Weale ; D. R. Weinberger ; H. H. Adams ; L. J. Launer ; S. Seiler ; R. Schmidt ; G. Chauhan ; C. L. Satizabal ; J. T. Becker ; L. Yanek ; S. J. van der Lee ; M. Ebling ; B. Fischl ; W. T. Longstreth, Jr. ; D. Greve ; H. Schmidt ; P. Nyquist ; L. N. Vinke ; C. M. van Duijn ; L. Xue ; B. Mazoyer ; J. C. Bis ; V. Gudnason ; S. Seshadri ; M. A. Ikram ; N. G. Martin ; M. J. Wright ; G. Schumann ; B. Franke ; P. M. Thompson ; S. E. Medland
    Nature Publishing Group (NPG)
    Published 2015
    Staff View
    Publication Date:
    2015-01-22
    Publisher:
    Nature Publishing Group (NPG)
    Print ISSN:
    0028-0836
    Electronic ISSN:
    1476-4687
    Topics:
    Biology
    Chemistry and Pharmacology
    Medicine
    Natural Sciences in General
    Physics
    Keywords:
    Adolescent ; Adult ; Aged ; Aged, 80 and over ; Aging/genetics ; Apoptosis/genetics ; Brain/*anatomy & histology ; Caudate Nucleus/anatomy & histology ; Child ; Female ; Gene Expression Regulation, Developmental/genetics ; Genetic Loci/genetics ; Genetic Variation/*genetics ; *Genome-Wide Association Study ; Hippocampus/anatomy & histology ; Humans ; Magnetic Resonance Imaging ; Male ; Membrane Proteins/genetics ; Middle Aged ; Organ Size/genetics ; Putamen/anatomy & histology ; Sex Characteristics ; Skull/anatomy & histology ; Young Adult
    Published by:
    http://www.nature.com/

    Latest Papers from Table of Contents or Articles in Press
  3. 3
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    Publication Date:
    2018-07-10
    Publisher:
    The American Association of Immunologists (AAI)
    Print ISSN:
    0022-1767
    Electronic ISSN:
    1550-6606
    Topics:
    Medicine
    Published by:
    http://www.aai.org/

    Latest Papers from Table of Contents or Articles in Press
  4. 4
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    Publication Date:
    2018-01-23
    Publisher:
    BMJ Publishing Group
    Print ISSN:
    0021-9746
    Electronic ISSN:
    1472-4146
    Topics:
    Medicine
    Published by:
    http://www.bmj.com/

    Latest Papers from Table of Contents or Articles in Press
  5. 5
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    Publication Date:
    2018-05-31
    Publisher:
    BMJ Publishing
    Electronic ISSN:
    2044-6055
    Topics:
    Medicine
    Keywords:
    Open access, Oncology
    Published by:
    http://group.bmj.com/

    Latest Papers from Table of Contents or Articles in Press
  6. 6
    Staff View
    Publication Date:
    2018-04-07
    Publisher:
    Institute of Physics (IOP)
    Print ISSN:
    1757-8981
    Electronic ISSN:
    1757-899X
    Topics:
    Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Published by:
    http://www.iop.org/

    Latest Papers from Table of Contents or Articles in Press
  7. 7
    Yamashita, S. ; Yamasaki, J. ; Ikeda, M. ; Iwabuchi, N.

    [S.l.] : American Institute of Physics (AIP)
    Published 1991
    Staff View
    ISSN:
    1089-7550
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    Efforts were made to obtain anisotropic thin-film magnets at low substrate temperature. This is an important criterion for practical applications such as to build motors. The influence of substrate materials as well as film thickness on the c-axis orientation were studied. It has been shown that thin-film magnets with the easy axis of magnetization normal to the film plane could be deposited at a substrate temperature of around 450 °C by choosing the composition near the line from Nd13Fe76B11 to Nd13Fe70B17 in the ternary phase diagram. It was found that the anisotropic film magnets could be also deposited on the metallic substrate. The c-axis orientation tended to be isotropic with an increase in film thickness. The obtained results were used to fabricate a milli-size motor by depositing 20-μm-thick Nd–Fe–B films on a silicon steel disk substrate of 5-mm diam. The milli-size motor exhibited a torque of 0.8 g mm at a rotational speed of 3000 rpm.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.349879

    Articles: DFG German National Licenses
  8. 8
    Hasegawa, S. ; Ikeda, M. ; Inokuma, T. ; Kurata, Y.

    [S.l.] : American Institute of Physics (AIP)
    Published 1996
    Staff View
    ISSN:
    1089-7550
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    Amorphous SiNx:H films having nitrogen content x greater than 1.3 were deposited at 300 °C by varying the ammonia-to-monosilane flow-rate ratio RN, using plasma-enhanced chemical- vapor-deposition. The characteristics of defects in the films subjected to UV illumination and anneal treatments were investigated by electron-spin-resonance (ESR) measurements. The paramagnetic Si dangling bonds (DBs) with three N atom neighbors, called the K0 center, were observed for an as-deposited film with RN of 5, and the density was favorably enhanced by exposing the film to UV light or by the UV illumination subsequent to its annealing. The K0 density decreased as the film was annealed at 550 °C after the UV illumination. The mechanisms of creation and disappearance of the K0 centers by the illumination and the annealing, respectively, were interpreted in terms of the potential fluctuation model. The K0 density in as-deposited films decreased with RN, and a new three-line spectrum was observed as RN exceeds 7. Origins of this new spectrum are discussed. The ESR spectra due to N DBs were observed for only the films subjected to the anneal/illumination sequence, and the densities of both N DBs and K0 centers decreased with increasing the annealing time before the illumination. © 1996 American Institute of Physics.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.363142

    Articles: DFG German National Licenses
  9. 9
    Ding, S. A. ; Ikeda, M. ; Fukuda, M. ; Miyazaki, S. ; Hirose, M.

    Woodbury, NY : American Institute of Physics (AIP)
    Published 1998
    Staff View
    ISSN:
    1077-3118
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    The first subband energy at the valence band of self-assembled silicon quantum dots grown by low-pressure chemical vapor deposition on ultrathin SiO2/Si substrates has been measured as an energy shift at the top of the valence band density of states by using high-resolution x-ray photoelectron spectroscopy. The systematic shift of the valence band maximum towards higher binding energy with decreasing the dot size is shown to be consistent with theoretical prediction. The charging effects of the silicon dots and the SiO2 layer by photoelectron emission during the measurements have been taken into account in determining the valence-band-edge energy. © 1998 American Institute of Physics.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.122923

    Articles: DFG German National Licenses
  10. 10
    Morita, E. ; Ikeda, M. ; Kumagai, O. ; Kaneko, K.

    Woodbury, NY : American Institute of Physics (AIP)
    Published 1988
    Staff View
    ISSN:
    1077-3118
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    GaInP epitaxial crystals grown on (001) GaAs at 660–700 °C by metalorganic chemical vapor deposition are examined by transmission electron microscopy. The computer-processed image of the high-resolution electron micrograph clearly reveals a lamellate-ordered domain structure of two variants of {111} superlattices, which is also investigated using cross-section and plan-view dark field electron micrographs. The spikes of well-defined superspots in the diffraction pattern were found to originate from the shape of the domains. The investigation of GaInP grown with different Zn concentrations showed that the disordering occurs as a result of a decrease in the density rather than the size of the domain.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.100287

    Articles: DFG German National Licenses
  11. 11
    Ikeda, M. ; Ito, H. ; Hiramatsu, M. ; Hori, M. ; Goto, T.

    [S.l.] : American Institute of Physics (AIP)
    Published 1997
    Staff View
    ISSN:
    1089-7550
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    Diamond films were successfully synthesized in both parallel-plate radio frequency (rf: 13.56 MHz) CH4 and CH3OH plasmas with injection of H and OH radicals generated in the remote microwave (2.45 GHz) H2/H2O plasma. Effects of H, OH, and CH3 radicals on the diamond film formation in the rf plasma reactor were investigated by the formation of diamond films employing radical injection technique and the measurement of density in the plasma. Under the condition of diamond film formation, CH3 density was measured by infrared diode laser absorption spectroscopy (IRLAS). The kinetics of CH3 in rf CH4 and CH3OH plasmas with injection of H and OH radicals were evaluated from the results of optical emission spectroscopy and lifetime of CH3 radicals estimated by IRLAS. © 1997 American Institute of Physics.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.365715

    Articles: DFG German National Licenses
  12. 12
    Ikeda, M. ; Sato, H. ; Ohata, T. ; Nakano, K. ; Toda, A. ; Kumagai, O. ; Kojima, C.

    Woodbury, NY : American Institute of Physics (AIP)
    Published 1987
    Staff View
    ISSN:
    1077-3118
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    A gain-guiding tapered stripe laser was fabricated using a Ga0.5In0.5P/(Al0.5Ga0.5)0.5In0.5P double heterostructure wafer grown by metalorganic chemical vapor deposition. The laser showed a continuous wave (cw) threshold current of 48 mA, a maximum temperature for cw operation of 81 °C, an aspect ratio of about 2, and an astigmatism near 25 μm. The emission wavelength was 684 nm. Thirty-two devices have been operating without significant degradation for more than 2000 h at 50 °C with a constant output power of 3 mW.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.98610

    Articles: DFG German National Licenses
  13. 13
    Nakamura, T. ; Ikeda, M. ; Muto, S. ; Umebu, I.

    Woodbury, NY : American Institute of Physics (AIP)
    Published 1988
    Staff View
    ISSN:
    1077-3118
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    We have studied interfacial atomic steps in GaAs/AlAs superlattices using high-resolution transmission electron microscopy (HRTEM) and lattice image simulation. We find arrays of bright spots at the interface in the TEM image to be good indicators of the interface configuration. Doubling of the bright spot arrays and step-shaped arrays in TEM lattice images indicate a "type 1'' monolayer step whose front is perpendicular to the direction of the electron beam and a "type 2'' monolayer step whose front is parallel to the direction of the electron beam. Our HRTEM observations indicate that the atomic steps at GaAs and AlAs interfaces grown at 700 °C are denser than at interfaces grown at 500 °C.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.99899

    Articles: DFG German National Licenses
  14. 14
    Ikeda, M. ; Ueda, O. ; Komiya, S. ; Umebu, I.

    [S.l.] : American Institute of Physics (AIP)
    Published 1985
    Staff View
    ISSN:
    1089-7550
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    We fabricated and life-tested visible AlGaAs/GaAs channeled-substrate-planar-type lasers and found that some are degraded within 100 h of operation. We investigated these using photoluminescence and transmission electron microscopic images. The characteristic features in photoluminescence images are dark defects that run parallel to the channeled stripe. Using transmission electron microscopy, we found that these dark defects are composed of precipitates, dislocation loops, and dislocation dipoles. In order to know the relation between these degradation phenomena and the thermal strain induced by lattice mismatch, we calculated the stress distribution in the semiconductor laser using the finite element method. According to this simulation, a stress concentration in the active layer arises near the edges of the channeled stripe where the volume dilatation is maximal. Combining the results of experiments and simulation, we concluded that interstitial atoms created by nonradiative recombination migrate to the edges of the stripe, and that ultimately dark defects appear near the edges of the stripe.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.335919

    Articles: DFG German National Licenses
  15. 15
    Matinaga, F. M. ; Karlsson, A. ; Machida, S. ; Yamamoto, Y. ; Suzuki, T. ; Kadota, Y. ; Ikeda, M.

    Woodbury, NY : American Institute of Physics (AIP)
    Published 1993
    Staff View
    ISSN:
    1077-3118
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    We demonstrate low-threshold lasing at 4 K in optically pumped hemispherical In0.2Ga0.8As single-quantum-well microcavities. The incident threshold pump power density is 11 kW/cm2 corresponding to an absorbed power density of about 320 W/cm2, and the measured spontaneous emission factor β is about 0.01.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.108928

    Articles: DFG German National Licenses
  16. 16
    Akimoto, K. ; Okuyama, H. ; Ikeda, M. ; Mori, Y.

    Woodbury, NY : American Institute of Physics (AIP)
    Published 1992
    Staff View
    ISSN:
    1077-3118
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    The properties of isoelectronic oxygen in II-VI semiconductors were studied by photoluminescence measurements. It was found that oxygen in CdTe, CdS, and ZnS can act as an acceptor as well as in ZnSe, and that the acceptor levels of oxygen in CdTe, CdSe, and ZnS are shallower than those of typical acceptors such as Na. Charge transfer from the host lattice to the oxygen atom may play an important role in oxygen acting as an acceptor. Based on the charge-transfer model, it can be qualitatively interpreted that there are two roles of oxygen in II-VI compounds: acting as an acceptor or as a trap, and that they are classified by the ionicity of the compound. We also now understand better the chemical trend of the oxygen-acceptor levels becoming more shallow compared to the typical acceptors.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.107385

    Articles: DFG German National Licenses
  17. 17
    Toda, A. ; Nakano, K. ; Yamamoto, T. ; Ikeda, M.

    Woodbury, NY : American Institute of Physics (AIP)
    Published 1995
    Staff View
    ISSN:
    1077-3118
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    Photoluminescence (PL) characteristics of Se-doped Ga0.5In0.5P/(Al0.5Ga0.5)0.5In0.5P double heterostructure (DH) on GaAs substrates were investigated at room temperature. The PL intensity and the decay time both strongly depend on the cladding-layer carrier density. Up to a carrier density of 2.5×1017 cm−3, the PL intensity increases linearly with carrier density, while the decay time is almost constant. For carrier densities larger than 2.5×1017 cm−3, the PL intensity and the decay time decrease linearly and quadratically with carrier density, respectively. We also studied the PL characteristics of Se-doped Ga0.5In0.5P and (Al0.5Ga0.5)0.5In0.5P single layers on GaAs substrates. We found that the carrier density dependence of DH governed by the cladding layer is similar to that of (Al0.5Ga0.5)0.5In0.5P single layers. These results indicate that a nonradiative interfacial recombination process dictates the DH PL characteristics and that the quality of the cladding layer affects the PL radiative efficiency. © 1995 American Institute of Physics.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.113771

    Articles: DFG German National Licenses
  18. 18
    Yoshida, H. ; Gonno, Y. ; Nakano, K. ; Taniguchi, S. ; Hino, T. ; Ishibashi, A. ; Ikeda, M. ; Chuang, S. L. ; Hegarty, J.

    Woodbury, NY : American Institute of Physics (AIP)
    Published 1996
    Staff View
    ISSN:
    1077-3118
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    We have studied the gain characteristics of gain-guided quantum well II–VI laser diodes by measuring the amplified spontaneous emission spectra under several pulsed conditions. The temperature rise during one current pulse affects the gain characteristics and the L-I characteristics. The net modal gain at constant peak current increases with the pulse width. The peak gain for long pulses shows a superlinear dependence on injection current. In this case, the L-I curve is very steep above threshold and sometimes shows an internal quantum efficiency of more than unity. This leads to an underestimation of the internal cavity loss giving a value inconsistent with the one obtained from the gain spectra. With short pulse currents (〈200 ns), the peak gain shows a weak sublinear dependence on injection current. The cavity losses obtained from the gain spectra and the L-I characteristics at short pulses are consistent. As a result, we obtain the intrinsic gain characteristics of gain-guided quantum well II–VI laser diodes. © 1996 American Institute of Physics.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.117561

    Articles: DFG German National Licenses
  19. 19
    Hino, T. ; Tomiya, S. ; Miyajima, T. ; Yanashima, K. ; Hashimoto, S. ; Ikeda, M.

    Woodbury, NY : American Institute of Physics (AIP)
    Published 2000
    Staff View
    ISSN:
    1077-3118
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    We investigated Si-doped GaN epitaxial layers on a (0001)-sapphire substrate using a HCl vapor-phase etching technique, scanning electron microscopy, atomic force microscopy, and transmission electron microscopy. Three kinds of distinctive etch pits correspond to three different types of threading dislocations, edge, mixed, and screw types. Photoluminescence intensity increases with the decrease in the number of etch pits corresponding to mixed and screw dislocations. The number of etch pits corresponding to edge dislocations, however, did not change. We concluded, therefore, that threading dislocations having a screw-component burgers vector act as strong nonradiative centers in GaN epitaxial layers, whereas edge dislocations, which are the majority, do not act as nonradiative centers. © 2000 American Institute of Physics.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.126666

    Articles: DFG German National Licenses
  20. 20
    OHTA, M. ; SAIDA, T. ; OHTA, K. ; MORI, F. ; NISHITANI, H. ; FUJINO, R. ; IKEDA, M.

    Oxford, UK : Blackwell Publishing Ltd
    Published 1988
    Staff View
    ISSN:
    1749-6632
    Source:
    Blackwell Publishing Journal Backfiles 1879-2005
    Topics:
    Natural Sciences in General
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1111/j.1749-6632.1988.tb27197.x

    Articles: DFG German National Licenses