Search Results - (Author, Cooperation:M. H. Kim)

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  1. 1
    Kim, J., Choi, T.-I., Park, S., Kim, M. H., Kim, C.-H., Lee, S.
    The Company of Biologists
    Published 2018
    Staff View
    Publication Date:
    2018-09-16
    Publisher:
    The Company of Biologists
    Print ISSN:
    0950-1991
    Electronic ISSN:
    1477-9129
    Topics:
    Biology
    Published by:
    http://www.biologists.com/

    Latest Papers from Table of Contents or Articles in Press
  2. 2
    C. R. Webster ; P. R. Mahaffy ; G. J. Flesch ; P. B. Niles ; J. H. Jones ; L. A. Leshin ; S. K. Atreya ; J. C. Stern ; L. E. Christensen ; T. Owen ; H. Franz ; R. O. Pepin ; A. Steele ; C. Achilles ; C. Agard ; J. A. Alves Verdasca ; R. Anderson ; D. Archer ; C. Armiens-Aparicio ; R. Arvidson ; E. Atlaskin ; A. Aubrey ; B. Baker ; M. Baker ; T. Balic-Zunic ; D. Baratoux ; J. Baroukh ; B. Barraclough ; K. Bean ; L. Beegle ; A. Behar ; J. Bell ; S. Bender ; M. Benna ; J. Bentz ; G. Berger ; J. Berger ; D. Berman ; D. Bish ; D. F. Blake ; J. J. Blanco Avalos ; D. Blaney ; J. Blank ; H. Blau ; L. Bleacher ; E. Boehm ; O. Botta ; S. Bottcher ; T. Boucher ; H. Bower ; N. Boyd ; B. Boynton ; E. Breves ; J. Bridges ; N. Bridges ; W. Brinckerhoff ; D. Brinza ; T. Bristow ; C. Brunet ; A. Brunner ; W. Brunner ; A. Buch ; M. Bullock ; S. Burmeister ; M. Cabane ; F. Calef ; J. Cameron ; J. Campbell ; B. Cantor ; M. Caplinger ; J. Caride Rodriguez ; M. Carmosino ; I. Carrasco Blazquez ; A. Charpentier ; S. Chipera ; D. Choi ; B. Clark ; S. Clegg ; T. Cleghorn ; E. Cloutis ; G. Cody ; P. Coll ; P. Conrad ; D. Coscia ; A. Cousin ; D. Cremers ; J. Crisp ; A. Cros ; F. Cucinotta ; C. d'Uston ; S. Davis ; M. Day ; M. de la Torre Juarez ; L. DeFlores ; D. DeLapp ; J. DeMarines ; D. DesMarais ; W. Dietrich ; R. Dingler ; C. Donny ; B. Downs ; D. Drake ; G. Dromart ; A. Dupont ; B. Duston ; J. Dworkin ; M. D. Dyar ; L. Edgar ; K. Edgett ; C. Edwards ; L. Edwards ; B. Ehlmann ; B. Ehresmann ; J. Eigenbrode ; B. Elliott ; H. Elliott ; R. Ewing ; C. Fabre ; A. Fairen ; K. Farley ; J. Farmer ; C. Fassett ; L. Favot ; D. Fay ; F. Fedosov ; J. Feldman ; S. Feldman ; M. Fisk ; M. Fitzgibbon ; M. Floyd ; L. Fluckiger ; O. Forni ; A. Fraeman ; R. Francis ; P. Francois ; C. Freissinet ; K. L. French ; J. Frydenvang ; A. Gaboriaud ; M. Gailhanou ; J. Garvin ; O. Gasnault ; C. Geffroy ; R. Gellert ; M. Genzer ; D. Glavin ; A. Godber ; F. Goesmann ; W. Goetz ; D. Golovin ; F. Gomez Gomez ; J. Gomez-Elvira ; B. Gondet ; S. Gordon ; S. Gorevan ; J. Grant ; J. Griffes ; D. Grinspoon ; J. Grotzinger ; P. Guillemot ; J. Guo ; S. Gupta ; S. Guzewich ; R. Haberle ; D. Halleaux ; B. Hallet ; V. Hamilton ; C. Hardgrove ; D. Harker ; D. Harpold ; A. M. Harri ; K. Harshman ; D. Hassler ; H. Haukka ; A. Hayes ; K. Herkenhoff ; P. Herrera ; S. Hettrich ; E. Heydari ; V. Hipkin ; T. Hoehler ; J. Hollingsworth ; J. Hudgins ; W. Huntress ; J. Hurowitz ; S. Hviid ; K. Iagnemma ; S. Indyk ; G. Israel ; R. Jackson ; S. Jacob ; B. Jakosky ; E. Jensen ; J. K. Jensen ; J. Johnson ; M. Johnson ; S. Johnstone ; A. Jones ; J. Joseph ; I. Jun ; L. Kah ; H. Kahanpaa ; M. Kahre ; N. Karpushkina ; W. Kasprzak ; J. Kauhanen ; L. Keely ; O. Kemppinen ; D. Keymeulen ; M. H. Kim ; K. Kinch ; P. King ; L. Kirkland ; G. Kocurek ; A. Koefoed ; J. Kohler ; O. Kortmann ; A. Kozyrev ; J. Krezoski ; D. Krysak ; R. Kuzmin ; J. L. Lacour ; V. Lafaille ; Y. Langevin ; N. Lanza ; J. Lasue ; S. Le Mouelic ; E. M. Lee ; Q. M. Lee ; D. Lees ; M. Lefavor ; M. Lemmon ; A. Lepinette Malvitte ; R. Leveille ; E. Lewin-Carpintier ; K. Lewis ; S. Li ; L. Lipkaman ; C. Little ; M. Litvak ; E. Lorigny ; G. Lugmair ; A. Lundberg ; E. Lyness ; M. Madsen ; J. Maki ; A. Malakhov ; C. Malespin ; M. Malin ; N. Mangold ; G. Manhes ; H. Manning ; G. Marchand ; M. Marin Jimenez ; C. Martin Garcia ; D. Martin ; M. Martin ; J. Martinez-Frias ; J. Martin-Soler ; F. J. Martin-Torres ; P. Mauchien ; S. Maurice ; A. McAdam ; E. McCartney ; T. McConnochie ; E. McCullough ; I. McEwan ; C. McKay ; S. McLennan ; S. McNair ; N. Melikechi ; P. Y. Meslin ; M. Meyer ; A. Mezzacappa ; H. Miller ; K. Miller ; R. Milliken ; D. Ming ; M. Minitti ; M. Mischna ; I. Mitrofanov ; J. Moersch ; M. Mokrousov ; A. Molina Jurado ; J. Moores ; L. Mora-Sotomayor ; J. M. Morookian ; R. Morris ; S. Morrison ; R. Mueller-Mellin ; J. P. Muller ; G. Munoz Caro ; M. Nachon ; S. Navarro Lopez ; R. Navarro-Gonzalez ; K. Nealson ; A. Nefian ; T. Nelson ; M. Newcombe ; C. Newman ; H. Newsom ; S. Nikiforov ; B. Nixon ; E. Noe Dobrea ; T. Nolan ; D. Oehler ; A. Ollila ; T. Olson ; M. A. de Pablo Hernandez ; A. Paillet ; E. Pallier ; M. Palucis ; T. Parker ; Y. Parot ; K. Patel ; M. Paton ; G. Paulsen ; A. Pavlov ; B. Pavri ; V. Peinado-Gonzalez ; L. Peret ; R. Perez ; G. Perrett ; J. Peterson ; C. Pilorget ; P. Pinet ; J. Pla-Garcia ; I. Plante ; F. Poitrasson ; J. Polkko ; R. Popa ; L. Posiolova ; A. Posner ; I. Pradler ; B. Prats ; V. Prokhorov ; S. W. Purdy ; E. Raaen ; L. Radziemski ; S. Rafkin ; M. Ramos ; E. Rampe ; F. Raulin ; M. Ravine ; G. Reitz ; N. Renno ; M. Rice ; M. Richardson ; F. Robert ; K. Robertson ; J. A. Rodriguez Manfredi ; J. J. Romeral-Planello ; S. Rowland ; D. Rubin ; M. Saccoccio ; A. Salamon ; J. Sandoval ; A. Sanin ; S. A. Sans Fuentes ; L. Saper ; P. Sarrazin ; V. Sautter ; H. Savijarvi ; J. Schieber ; M. Schmidt ; W. Schmidt ; D. Scholes ; M. Schoppers ; S. Schroder ; S. Schwenzer ; E. Sebastian Martinez ; A. Sengstacken ; R. Shterts ; K. Siebach ; T. Siili ; J. Simmonds ; J. B. Sirven ; S. Slavney ; R. Sletten ; M. Smith ; P. Sobron Sanchez ; N. Spanovich ; J. Spray ; S. Squyres ; K. Stack ; F. Stalport ; T. Stein ; N. Stewart ; S. L. Stipp ; K. Stoiber ; E. Stolper ; B. Sucharski ; R. Sullivan ; R. Summons ; D. Sumner ; V. Sun ; K. Supulver ; B. Sutter ; C. Szopa ; F. Tan ; C. Tate ; S. Teinturier ; I. ten Kate ; P. Thomas ; L. Thompson ; R. Tokar ; M. Toplis ; J. Torres Redondo ; M. Trainer ; A. Treiman ; V. Tretyakov ; R. Urqui-O'Callaghan ; J. Van Beek ; T. Van Beek ; S. VanBommel ; D. Vaniman ; A. Varenikov ; A. Vasavada ; P. Vasconcelos ; E. Vicenzi ; A. Vostrukhin ; M. Voytek ; M. Wadhwa ; J. Ward ; E. Weigle ; D. Wellington ; F. Westall ; R. C. Wiens ; M. B. Wilhelm ; A. Williams ; J. Williams ; R. Williams ; R. B. Williams ; M. Wilson ; R. Wimmer-Schweingruber ; M. Wolff ; M. Wong ; J. Wray ; M. Wu ; C. Yana ; A. Yen ; A. Yingst ; C. Zeitlin ; R. Zimdar ; M. P. Zorzano Mier
    American Association for the Advancement of Science (AAAS)
    Published 2013
    Staff View
    Publication Date:
    2013-07-23
    Publisher:
    American Association for the Advancement of Science (AAAS)
    Print ISSN:
    0036-8075
    Electronic ISSN:
    1095-9203
    Topics:
    Biology
    Chemistry and Pharmacology
    Computer Science
    Medicine
    Natural Sciences in General
    Physics
    Published by:
    http://www.aaas.org/

    Latest Papers from Table of Contents or Articles in Press
  3. 3
    Staff View
    Publication Date:
    2013-12-11
    Publisher:
    American Association for the Advancement of Science (AAAS)
    Print ISSN:
    0036-8075
    Electronic ISSN:
    1095-9203
    Topics:
    Biology
    Chemistry and Pharmacology
    Computer Science
    Medicine
    Natural Sciences in General
    Physics
    Keywords:
    *Cosmic Radiation ; Deinococcus/physiology/radiation effects ; *Exobiology ; *Extraterrestrial Environment ; Humans ; *Mars ; Organic Chemicals/analysis ; Radiation Dosage ; Space Flight ; Surface Properties/radiation effects
    Published by:
    http://www.aaas.org/

    Latest Papers from Table of Contents or Articles in Press
  4. 4
    J. K. Ryu ; D. Min ; S. H. Rah ; S. J. Kim ; Y. Park ; H. Kim ; C. Hyeon ; H. M. Kim ; R. Jahn ; T. Y. Yoon
    American Association for the Advancement of Science (AAAS)
    Published 2015
    Staff View
    Publication Date:
    2015-03-31
    Publisher:
    American Association for the Advancement of Science (AAAS)
    Print ISSN:
    0036-8075
    Electronic ISSN:
    1095-9203
    Topics:
    Biology
    Chemistry and Pharmacology
    Computer Science
    Medicine
    Natural Sciences in General
    Physics
    Keywords:
    Adenosine Triphosphate/*metabolism ; Animals ; Cattle ; Cricetinae ; Fluorescence Resonance Energy Transfer ; Hydrolysis ; N-Ethylmaleimide-Sensitive Proteins/*metabolism ; Rats ; SNARE Proteins/*metabolism ; Soluble N-Ethylmaleimide-Sensitive Factor Attachment Proteins/*metabolism ; Spectrometry, Fluorescence
    Published by:
    http://www.aaas.org/

    Latest Papers from Table of Contents or Articles in Press
  5. 5
    T. Lu ; L. Aron ; J. Zullo ; Y. Pan ; H. Kim ; Y. Chen ; T. H. Yang ; H. M. Kim ; D. Drake ; X. S. Liu ; D. A. Bennett ; M. P. Colaiacovo ; B. A. Yankner
    Nature Publishing Group (NPG)
    Published 2014
    Staff View
    Publication Date:
    2014-03-29
    Publisher:
    Nature Publishing Group (NPG)
    Print ISSN:
    0028-0836
    Electronic ISSN:
    1476-4687
    Topics:
    Biology
    Chemistry and Pharmacology
    Medicine
    Natural Sciences in General
    Physics
    Keywords:
    Aged ; Aged, 80 and over ; Aging/genetics/*metabolism/pathology ; Alzheimer Disease/genetics/*metabolism/pathology ; Amyloid beta-Peptides/antagonists & inhibitors/toxicity ; Animals ; Autophagy ; Brain/cytology/metabolism/pathology ; Caenorhabditis elegans Proteins/metabolism ; Cell Death/genetics ; Cell Nucleus/metabolism ; Chromatin Immunoprecipitation ; Cognition ; DNA-Binding Proteins/metabolism ; Down-Regulation ; Frontotemporal Dementia/metabolism/pathology ; Gene Expression Regulation ; Humans ; Lewy Body Disease/metabolism/pathology ; Longevity ; Mice ; Mild Cognitive Impairment/metabolism ; Neurons/cytology/metabolism/pathology ; Neuroprotective Agents/metabolism ; *Oxidative Stress/genetics/physiology ; Phagosomes ; Repressor Proteins/deficiency/genetics/*metabolism ; Transcription Factors/metabolism ; Up-Regulation ; Wnt Signaling Pathway ; Young Adult
    Published by:
    http://www.nature.com/

    Latest Papers from Table of Contents or Articles in Press
  6. 6
    H. M. Kim
    Nature Publishing Group (NPG)
    Published 2011
    Staff View
    Publication Date:
    2011-09-17
    Publisher:
    Nature Publishing Group (NPG)
    Print ISSN:
    0028-0836
    Electronic ISSN:
    1476-4687
    Topics:
    Biology
    Chemistry and Pharmacology
    Medicine
    Natural Sciences in General
    Physics
    Keywords:
    Conservation of Natural Resources/*economics/*trends ; *Internationality
    Published by:
    http://www.nature.com/

    Latest Papers from Table of Contents or Articles in Press
  7. 7
    S. Park ; X. Li ; H. M. Kim ; C. R. Singh ; G. Tian ; M. A. Hoyt ; S. Lovell ; K. P. Battaile ; M. Zolkiewski ; P. Coffino ; J. Roelofs ; Y. Cheng ; D. Finley
    Nature Publishing Group (NPG)
    Published 2013
    Staff View
    Publication Date:
    2013-05-07
    Publisher:
    Nature Publishing Group (NPG)
    Print ISSN:
    0028-0836
    Electronic ISSN:
    1476-4687
    Topics:
    Biology
    Chemistry and Pharmacology
    Medicine
    Natural Sciences in General
    Physics
    Keywords:
    Adenosine Triphosphatases/chemistry/genetics/metabolism ; Adenosine Triphosphate/metabolism ; Binding Sites ; Carrier Proteins/metabolism ; Cryoelectron Microscopy ; Holoenzymes/chemistry/metabolism ; Models, Molecular ; Molecular Chaperones/*metabolism ; Proteasome Endopeptidase Complex/*chemistry/genetics/*metabolism ; Protein Conformation ; Recombinant Fusion Proteins/chemistry/genetics/metabolism ; Saccharomyces cerevisiae/enzymology/genetics/growth & development/*metabolism ; Saccharomyces cerevisiae Proteins/chemistry/genetics/*metabolism
    Published by:
    http://www.nature.com/

    Latest Papers from Table of Contents or Articles in Press
  8. 8
    Yu, D. I., Kwak, H. J., Noh, H., Park, H. S., Fezzaa, K., Kim, M. H.
    American Association for the Advancement of Science (AAAS)
    Published 2018
    Staff View
    Publication Date:
    2018-02-24
    Publisher:
    American Association for the Advancement of Science (AAAS)
    Electronic ISSN:
    2375-2548
    Topics:
    Natural Sciences in General
    Published by:
    http://www.aaas.org/

    Latest Papers from Table of Contents or Articles in Press
  9. 9
    Pan, N. ; Carter, J. ; Hendriks, H. ; Kim, M. H.

    [S.l.] : American Institute of Physics (AIP)
    Published 1992
    Staff View
    ISSN:
    1089-7550
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    Si delta-doped In0.15Ga0.85As/GaAs strained quantum wells are demonstrated by atmospheric pressure metalorganic chemical vapor deposition. The samples were characterized by variable temperature Hall effect, high magnetic field magnetoresistance, quantum Hall effect, capacitance-voltage measurements (C-V), and secondary-ion mass spectroscopy. The C-V profile showed a full width at half maximum as narrow as 15 A(ring). Two-dimensional electron gas transport was verified by observing step-like structures in the quantum Hall effect in samples containing sheet densities less than 5×1012 cm−2. Sheet densities as high as 1.0×1013 cm−2 were achieved. C and O contamination were not observed during the Si delta-doping process.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.352128

    Articles: DFG German National Licenses
  10. 10
    Yan, B. D. ; Warren, G. W. ; Kim, M. H. ; Barnard, J. A.

    [S.l.] : American Institute of Physics (AIP)
    Published 1990
    Staff View
    ISSN:
    1089-7550
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    A series of GdxTby(Fe92Co8)100-x-y alloy thin films (about 200 nm in thickness) on glass substrates was prepared by dc magnetron sputtering using composite targets of pure Fe, Tb, Gd, and Co. Film composition was changed by varying the area percent of Tb and Gd in the target from 0% to 24%. In order to study the individual and combined effects of Gd and Tb, alloys of GdFeCo, TbFeCo, and GdTbFeCo were compared to each other and to an Fe92Co8 alloy. These comparisons were made on the basis of standard electrochemical tests, including anodic polarization as well as measurement of open circuit potentials and potential decay, in deaerated 0.15-M NaH2PO4 buffer solution (pH=4) at 25 °C. Results indicate that additions of Gd and Tb decrease the corrosion current of the Fe92Co8 alloy by a factor of 10 or more. Both Gd and Tb show very similar effects on the corrosion behavior of FeCo. Results suggest that a total of about 24% Gd and/or Tb may represent an optimum level for improving the corrosion resistance of GdTbFeCo magneto-optical thin films.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.344594

    Articles: DFG German National Licenses
  11. 11
    Kim, M. H. ; Plano, M. A. ; Haase, M. A. ; Stillman, G. E. ; Wang, W. I.

    [S.l.] : American Institute of Physics (AIP)
    Published 1991
    Staff View
    ISSN:
    1089-7550
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    High-purity GaAs layers which are nearly or fully depleted of carriers at low temperatures, due to surface and interface depletion effects, can be characterized electrically by utilizing the phenomenon of persistent photoconductivity. To facilitate electrical measurements of such layers, at 4.2 K the sample is momentarily illuminated by above band-gap light, which causes a reduction in the surface and interface depletion region. After illumination the effects of the photoinduced charge neutral region persist until at some higher temperature, the charge distribution in the sample relaxes back to its original equilibrium state. Results of variable temperature Hall-effect measurements performed under these conditions show that the sheet carrier concentration is increased as compared to measurements obtained in the dark but that the mobility is unchanged. The increase in the sheet carrier concentration after illumination results from the decrease of the surface and interface depletion widths. Such measurements can provide a method for judging the quality of layers that are fully depleted of carriers. The mobility of a high-purity GaAs layer which becomes fully depleted of carriers at low temperatures in the dark, measures 180 000 cm2/V s at 77 K by this method. Photocapacitance-voltage profiling measurements clearly show the change in the depletion widths. A model is presented which accurately depicts the temperature dependence of the band-bending potentials at the surface and interface after illumination with above band-gap light.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.349738

    Articles: DFG German National Licenses
  12. 12
    Parsons, C. A. ; Kim, M. H. ; Quinn, W. E. ; Herrmann, H. B. ; Swirhun, S. E. ; Brierley, S. K.

    [S.l.] : American Institute of Physics (AIP)
    Published 1994
    Staff View
    ISSN:
    1089-7550
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    Nondestructive room temperature photoluminescence of the InGaAs channel of a pseudomorphic high electron mobility transistor is presented as a function of bias applied to a semitransparent gate. The channel electron sheet concentration is evaluated via line-shape fitting of the photolumin- escence spectrum. Excellent agreement with electrically derived values of the channel charge was found. Information on the symmetry of the channel potential is also provided by the results of the photoluminescence line-shape fit.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.357800

    Articles: DFG German National Licenses
  13. 13
    Bose, S. S. ; Szafranek, I. ; Kim, M. H. ; Stillman, G. E.

    Woodbury, NY : American Institute of Physics (AIP)
    Published 1990
    Staff View
    ISSN:
    1077-3118
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    Zn and an unidentified acceptor species, labeled A1, are the only residual acceptors that have been observed in a wide variety of undoped high-purity InP samples grown by metalorganic chemical vapor deposition. Carbon is not incorporated at detectable concentrations as a residual acceptor in metalorganic chemical vapor deposited InP. However, the longitudinal and transverse optical phonon replicas of the free-exciton recombination occur at the same energy as the donor/conduction band-to-acceptor peaks for C acceptors in low-temperature photoluminescence spectra. Since these replicas are usually present in photoluminescence spectra measured under moderate or high optical excitation, care must be exercised so that these peaks are not misinterpreted as C-related transitions.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.102702

    Articles: DFG German National Licenses
  14. 14
    Lee, B. ; Bose, S. S. ; Kim, M. H. ; Stillman, G. E. ; Calawa, A. R.

    Woodbury, NY : American Institute of Physics (AIP)
    Published 1988
    Staff View
    ISSN:
    1077-3118
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    High-purity Si-doped molecular beam epitaxy (MBE) GaAs layers grown with and without the intentional introduction of CO gas have been characterized by Hall effect measurements, photoluminescence, and photothermal ionization spectroscopy. The results indicate that CO itself is not the source of residual C acceptor impurities in MBE GaAs samples. The observations of the correlation of residual C impurity incorporation with the residual CO gas in the MBE growth chamber suggest that the partial pressure of CO, PCO , gives a quantitative indication of background levels of hydrocarbons which are the source of C acceptors.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.100410

    Articles: DFG German National Licenses
  15. 15
    Bose, S. S. ; Lee, B. ; Kim, M. H. ; Stillman, G. E.

    Woodbury, NY : American Institute of Physics (AIP)
    Published 1987
    Staff View
    ISSN:
    1077-3118
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.99013

    Articles: DFG German National Licenses
  16. 16
    McCollum, M. J. ; Kim, M. H. ; Bose, S. S. ; Lee, B. ; Stillman, G. E.

    Woodbury, NY : American Institute of Physics (AIP)
    Published 1988
    Staff View
    ISSN:
    1077-3118
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    Indium phosphide layers with electron mobilities at liquid-nitrogen temperature of 91 000–125 000 cm2 /V s and carrier concentrations of 3–6×1014 cm−3 have been routinely grown by hydride vapor phase epitaxy. This 77 K mobility is significantly higher than the best previously reported for hydride vapor phase epitaxial InP. Analysis by variable temperature Hall effect, photothermal ionization spectroscopy, photoluminescence, and magnetophotoluminescence confirms the high purity of the samples. The influence of O2 on Si incorporation (injected over the In source) has also been studied. The injected oxygen did not significantly influence the silicon donor concentration.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.100483

    Articles: DFG German National Licenses
  17. 17
    Bose, S. S. ; Kim, M. H. ; Stillman, G. E.

    Woodbury, NY : American Institute of Physics (AIP)
    Published 1988
    Staff View
    ISSN:
    1077-3118
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    The residual donor species, Si, S, and Ge, have been identified in high-purity undoped p-type epitaxial GaAs grown by metalorganic chemical vapor deposition and arsenic trichloride vapor phase techniques using the magnetic splittings of "two-electron'' replicas of donor bound exciton transitions at low temperature (∼1.8 K) and at a high magnetic field (9.0 T). This technique permits identification of donors in certain high-purity p-type GaAs samples in which donor species cannot be identified by photothermal ionization spectroscopy or any other technique.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.100047

    Articles: DFG German National Licenses
  18. 18
    Pan, N. ; Bose, S. S. ; Kim, M. H. ; Stillman, G. E. ; Chambers, F. ; Devane, G. ; Ito, C. R. ; Feng, M.

    Woodbury, NY : American Institute of Physics (AIP)
    Published 1987
    Staff View
    ISSN:
    1077-3118
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    The effects of hydrogenation in high-purity p-type GaAs grown by molecular beam epitaxy and metalorganic chemical vapor deposition have been investigated by low-temperature photoluminescence and Hall-effect measurements. Before hydrogenation, photoluminescence measurements showed the dominant acceptor in the original samples was C, while after hydrogenation, the concentration of electrically active C acceptors was significantly reduced and the samples were highly resistive. These electrical and spectroscopic results show that C acceptors in GaAs can be passivated by hydrogenation.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.98358

    Articles: DFG German National Licenses
  19. 19
    Bose, S. S. ; Lee, B. ; Kim, M. H. ; Stillman, G. E.

    Woodbury, NY : American Institute of Physics (AIP)
    Published 1987
    Staff View
    ISSN:
    1077-3118
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    The magnetophotoluminescence peaks in the "two-electron'' satellites of the donor bound exciton transitions corresponding to the shallow donors S, Si, Ge, Sn, and Te have been identified by correlation of photoluminescence measurements with photothermal ionization measurements on the same high-purity epitaxial GaAs samples. The magnetophotoluminescence measurements were made at 1.7 K and a magnetic field of 9.0 T. These results permit the use of magnetophotoluminescence measurements for the identification of residual donor impurity species in high-purity GaAs.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.98807

    Articles: DFG German National Licenses
  20. 20
    Bose, S. S. ; Lee, B. ; Kim, M. H. ; Stillman, G. E. ; Wang, W. I.

    [S.l.] : American Institute of Physics (AIP)
    Published 1988
    Staff View
    ISSN:
    1089-7550
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    The incorporation of Si in high-purity lightly Si-doped GaAs grown simultaneously on (100), (311)A, and (311)B GaAs substrates by molecular-beam epitaxy has been studied. Photothermal ionization spectroscopy shows that Si is incorporated predominantly as a donor for growth on (100) and (311)B substrates, whereas low-temperature photoluminescence shows that Si is incorporated predominantly as an acceptor for growth on a (311)A substrate. Spectroscopic and Hall-effect measurements show that the dominance of Si donors in the samples grown on the (100) and (311)B substrates renders these samples n-type while the dominance of Si acceptors in the sample grown on the (311)A substrate renders that sample p-type.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.340066

    Articles: DFG German National Licenses