Search Results - (Author, Cooperation:M. Gross)

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  1. 1
    Staff View
    Publication Date:
    2018-04-07
    Publisher:
    American Physical Society (APS)
    Print ISSN:
    0031-9007
    Electronic ISSN:
    1079-7114
    Topics:
    Physics
    Keywords:
    Plasma and Beam Physics
    Published by:
    http://www.aps.org/

    Latest Papers from Table of Contents or Articles in Press
  2. 2
    Rolfes M, Gross F, Flannery B, et al.
    Oxford University Press
    Published 2018
    Staff View
    Publication Date:
    2018-03-14
    Publisher:
    Oxford University Press
    Print ISSN:
    0022-1899
    Electronic ISSN:
    1537-6613
    Topics:
    Medicine
    Published by:
    http://global.oup.com/

    Latest Papers from Table of Contents or Articles in Press
  3. 3
    Staff View
    Publication Date:
    2018-11-06
    Publisher:
    The American Association of Immunologists (AAI)
    Print ISSN:
    0022-1767
    Electronic ISSN:
    1550-6606
    Topics:
    Medicine
    Published by:
    http://www.aai.org/

    Latest Papers from Table of Contents or Articles in Press
  4. 4
    R. Do ; N. O. Stitziel ; H. H. Won ; A. B. Jorgensen ; S. Duga ; P. Angelica Merlini ; A. Kiezun ; M. Farrall ; A. Goel ; O. Zuk ; I. Guella ; R. Asselta ; L. A. Lange ; G. M. Peloso ; P. L. Auer ; D. Girelli ; N. Martinelli ; D. N. Farlow ; M. A. DePristo ; R. Roberts ; A. F. Stewart ; D. Saleheen ; J. Danesh ; S. E. Epstein ; S. Sivapalaratnam ; G. K. Hovingh ; J. J. Kastelein ; N. J. Samani ; H. Schunkert ; J. Erdmann ; S. H. Shah ; W. E. Kraus ; R. Davies ; M. Nikpay ; C. T. Johansen ; J. Wang ; R. A. Hegele ; E. Hechter ; W. Marz ; M. E. Kleber ; J. Huang ; A. D. Johnson ; M. Li ; G. L. Burke ; M. Gross ; Y. Liu ; T. L. Assimes ; G. Heiss ; E. M. Lange ; A. R. Folsom ; H. A. Taylor ; O. Olivieri ; A. Hamsten ; R. Clarke ; D. F. Reilly ; W. Yin ; M. A. Rivas ; P. Donnelly ; J. E. Rossouw ; B. M. Psaty ; D. M. Herrington ; J. G. Wilson ; S. S. Rich ; M. J. Bamshad ; R. P. Tracy ; L. A. Cupples ; D. J. Rader ; M. P. Reilly ; J. A. Spertus ; S. Cresci ; J. Hartiala ; W. H. Tang ; S. L. Hazen ; H. Allayee ; A. P. Reiner ; C. S. Carlson ; C. Kooperberg ; R. D. Jackson ; E. Boerwinkle ; E. S. Lander ; S. M. Schwartz ; D. S. Siscovick ; R. McPherson ; A. Tybjaerg-Hansen ; G. R. Abecasis ; H. Watkins ; D. A. Nickerson ; D. Ardissino ; S. R. Sunyaev ; C. J. O'Donnell ; D. Altshuler ; S. Gabriel ; S. Kathiresan
    Nature Publishing Group (NPG)
    Published 2014
    Staff View
    Publication Date:
    2014-12-10
    Publisher:
    Nature Publishing Group (NPG)
    Print ISSN:
    0028-0836
    Electronic ISSN:
    1476-4687
    Topics:
    Biology
    Chemistry and Pharmacology
    Medicine
    Natural Sciences in General
    Physics
    Keywords:
    Age Factors ; Age of Onset ; *Alleles ; Apolipoproteins A/*genetics ; Case-Control Studies ; Cholesterol, LDL/blood ; Coronary Artery Disease/genetics ; Exome/*genetics ; Female ; Genetic Predisposition to Disease/*genetics ; Genetics, Population ; Heterozygote ; Humans ; Male ; Middle Aged ; Mutation/genetics ; Myocardial Infarction/blood/*genetics ; National Heart, Lung, and Blood Institute (U.S.) ; Receptors, LDL/*genetics ; Triglycerides/blood ; United States
    Published by:
    http://www.nature.com/

    Latest Papers from Table of Contents or Articles in Press
  5. 5
    Staff View
    ISSN:
    0040-4039
    Source:
    Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics:
    Chemistry and Pharmacology
    Type of Medium:
    Electronic Resource
    URL:
    http://linkinghub.elsevier.com/retrieve/pii/S0040-4039(00)97943-7

    Articles: DFG German National Licenses
  6. 6
    Staff View
    Publication Date:
    2018-04-24
    Publisher:
    American Physical Society (APS)
    Print ISSN:
    1098-0121
    Electronic ISSN:
    1095-3795
    Topics:
    Physics
    Keywords:
    Magnetism
    Published by:
    http://www.aps.org/

    Latest Papers from Table of Contents or Articles in Press
  7. 7
    Staff View
    Publication Date:
    2018-05-16
    Publisher:
    American Physical Society (APS)
    Print ISSN:
    0556-2813
    Electronic ISSN:
    1089-490X
    Topics:
    Physics
    Keywords:
    Nuclear Structure
    Published by:
    http://www.aps.org/

    Latest Papers from Table of Contents or Articles in Press
  8. 8
    Staff View
    Publication Date:
    2018-01-12
    Publisher:
    BMJ Publishing
    Electronic ISSN:
    2044-6055
    Topics:
    Medicine
    Keywords:
    Open access
    Published by:
    http://group.bmj.com/

    Latest Papers from Table of Contents or Articles in Press
  9. 9
    Staff View
    Publication Date:
    2018-01-11
    Publisher:
    Wiley-Blackwell
    Print ISSN:
    0148-0227
    Topics:
    Geosciences
    Physics
    Published by:
    http://www.wiley.com/wiley-blackwell

    Latest Papers from Table of Contents or Articles in Press
  10. 10
    Staff View
    Publication Date:
    2018-09-11
    Publisher:
    American Physical Society (APS)
    Print ISSN:
    1098-0121
    Electronic ISSN:
    1095-3795
    Topics:
    Physics
    Keywords:
    Errata
    Published by:
    http://www.aps.org/

    Latest Papers from Table of Contents or Articles in Press
  11. 11
    Shwe, C. ; Kraisingdecha, P. ; Gal, M. ; Varley, B. ; Gross, M.

    [S.l.] : American Institute of Physics (AIP)
    Published 1993
    Staff View
    ISSN:
    1089-7550
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    In this study, with the use of a sensitive optical technique, we demonstrate the possibility of measuring the depth distribution of damage in GaAs that is generated by various ion-assisted processes such as ion implantation and ion assisted plasma etching. We have used this technique to measure the depth distribution of damage in both He and Ar implanted GaAs and in inert gas and reactive ion etched GaAs. The sensitivity of the technique allowed us to measure damage profiles over a large range of ion energies and ion doses. We have also confirmed previously published results indicating that damage created by sputter etching is inversely proportional to the mass of the ions used in the etching process.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.355337

    Articles: DFG German National Licenses
  12. 12
    Chong, C. M. ; Davies, K. E. ; Wenham, S. R. ; Gross, M. ; Horwitz, C. M. ; Green, M. A.

    [S.l.] : American Institute of Physics (AIP)
    Published 1991
    Staff View
    ISSN:
    1089-7550
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    Solar cells with less than 1% front-surface metal shading loss have been made with a deep-grooving hollow cathode dry etching process. Compared with standard laser-grooved cells, a 4% relative increase in short-circuit current density has been demonstrated. Open-circuit voltages of over 640 mV (air mass 1.5, 25 °C), a fill factor of almost 79%, and the application of an antireflection coating have resulted in a one-sun efficiency of 19.2%. This is one of the highest efficiencies yet reported for a cleaved 4 cm2 silicon solar cell.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.348429

    Articles: DFG German National Licenses
  13. 13
    Gross, M. E. ; Harriott, L. R. ; Opila, R. L.

    [S.l.] : American Institute of Physics (AIP)
    Published 1991
    Staff View
    ISSN:
    1089-7550
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.348978

    Articles: DFG German National Licenses
  14. 14
    Gross, M. E. ; Fleming, C. G. ; Cheung, K. P. ; Heimbrook, L. A.

    [S.l.] : American Institute of Physics (AIP)
    Published 1991
    Staff View
    ISSN:
    1089-7550
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    Low-pressure metalorganic chemical vapor deposition (MOCVD) of aluminum using triethylamine alane (TEAA) is reported. This liquid source combines the chemical advantages of adduct precursors such as solid trimethylamine alane (TMAA), with the processing and handling advantages of liquid precursors such as triisobutyl aluminum (TIBA). High-purity Al films were deposited on TiN and thin in situ evaporated Cu and Ti films, which serve as activators for nucleation of Al. The electrical resistivities of the Al films on TiN were close to the 3 μΩ cm of sputtered Al. In the case of depositions on Cu, the Cu diffuses readily into the Al and serves to improve the electromigration resistance of the latter. The Al deposition rates using TEAA are 2–4 times those using TIBA at 250 °C, although the TEAA process is not fully optimized at this point and further work is needed to improve the film morphologies.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.348649

    Articles: DFG German National Licenses
  15. 15
    Pearce, C. W. ; Fetcho, R. F. ; Gross, M. D. ; Koefer, R. F. ; Pudliner, R. A.

    [S.l.] : American Institute of Physics (AIP)
    Published 1992
    Staff View
    ISSN:
    1089-7550
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    We have studied the effect of plasma excitation frequency on the properties of plasma-enhanced chemical vapor deposition silicon nitride films. The use of two radio-frequency sources, one at 270 kHz and the other at 13.56 MHz, enabled us to vary film properties such as stress by altering the amount of power supplied by each source. The low-frequency excitation was seen to favor the formation of N—H bonds in the deposited film. The relative amounts of N—H and Si—H bonds in the film were found to determine many of the film properties such as stress, conduction and wet etch rate.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.351396

    Articles: DFG German National Licenses
  16. 16
    Gross, M. E. ; Harriott, L. R. ; Opila, R. L.

    [S.l.] : American Institute of Physics (AIP)
    Published 1990
    Staff View
    ISSN:
    1089-7550
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    Focused ion beam stimulated deposition of aluminum from trimethylamine alane, a white solid, and triethylamine alane, a colorless liquid, is reported. Initiation of growth on Si and SiO2 substrates is enhanced by in situ sputter cleaning of the surface with the Ga+ beam prior to introduction of the metallo-organic. Alternatively gas phase chemical activation with a silane coupling agent can enhance nucleation. Uniform nucleation on Al surfaces does not require any pretreatment. The Al features are electrically conducting, but incorporation of C and N from the amines leads to a resistivity approximately 300 times that of bulk Al. A qualitative model is presented that describes the balance condition for net material deposition as opposed to sputtering in terms of precursor flux and sticking probability as well as ion beam current density and beam scanning parameters. Film morphology and composition are also discussed.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.346140

    Articles: DFG German National Licenses
  17. 17
    Lingk, C. ; Gross, M. E. ; Brown, W. L.

    [S.l.] : American Institute of Physics (AIP)
    Published 2000
    Staff View
    ISSN:
    1089-7550
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    The transition from sputtered Al to electroplated Cu interconnects for future microelectronic devices has led to an interest in understanding the relationships between the microstructure and texture of Cu that might impact electrical performance, similar to what has been done for Al. Electroplated Cu undergoes a recrystallization at room temperature that is related to the presence of organic and inorganic additives in the plating bath. As plated, the Cu grains are small (approx. 0.1 μm) and equiaxed, but over a period of hours to days, recrystallization results in grains several microns in size. We observe a significant weakening of the strong as-plated (111) texture by x-ray diffraction pole figure measurements and an increase in the level of randomness. We propose that multiple twinning is the leading mechanism for this phenomenon. © 2000 American Institute of Physics.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.372166

    Articles: DFG German National Licenses
  18. 18
    Charatan, R. M. ; Gross, M. E. ; Eaglesham, D. J.

    [S.l.] : American Institute of Physics (AIP)
    Published 1994
    Staff View
    ISSN:
    1089-7550
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    The use of a low oxidation state Ti compound, cyclopentadienyl cycloheptatrienyl titanium, (C5H5) Ti(C7H7) (CPCHT), as a potential source for TiN and Ti in plasma enhanced chemical vapor deposition processes has been investigated. This precursor provides us with a new chemical vapor deposition route to TiN films that offer an interesting contrast to films deposited from Ti(IV) precursors. Film depositions were carried out by introducing CPCHT, with H2 carrier gas, into the downstream region of a NH3, N2, H2, or mixed H2/N2 plasma. Low resistivity (100–250 μΩ cm) nitrogen-rich TiN films with little carbon or oxygen incorporation and good conformality were deposited with activated N2 or NH3 at deposition temperatures of 300–600 °C, inclusive. Mixed H2/N2 plasmas resulted in more stoichiometric TiN films with similar properties. The most striking feature of these films is the absence of columnar grain growth, in contrast to TiN films deposited using TiCl4 or Ti(NR2)4. Although the film texture was influenced by the plasma gas, the average grain size of the films deposited using activated N2 and NH3 was similar. The TiN films that we deposited were effective diffusion barriers between aluminum and silicon up to 575 °C. Depositions using activated H2 resulted in films with significantly less carbon than CPCHT, but still having a minimum of 2.7:1 C:Ti. The lower oxidation state of the precursor did not facilitate the deposition of a Ti-rich film. No depositions were observed with any of the reactant gases in the absence of plasma activation.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.357327

    Articles: DFG German National Licenses
  19. 19
    Eaglesham, D. J. ; Bower, J. E. ; Marcus, M. A. ; Gross, M.

    Woodbury, NY : American Institute of Physics (AIP)
    Published 1997
    Staff View
    ISSN:
    1077-3118
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    We use electron microscopy and x-ray diffraction to study the microstructure of TiN deposited on Al. In contrast to previous work, we show that the TiN has a large ((approximate)1 μm) grain size arising from its epitaxial orientation on the underlying Al. Within a single grain, the TiN has a heavily voided columnar structure that closely mimics the appearance of fine grains. The within-grain columnar structure arises from the usual shadowing mechanism for sputtered films, and has a weak dependence on the deposition temperature. © 1997 American Institute of Physics.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.119525

    Articles: DFG German National Licenses
  20. 20
    Gross, M. E. ; Hong, M. ; Liou, S. H. ; Gallagher, P. K. ; Kwo, J.

    Woodbury, NY : American Institute of Physics (AIP)
    Published 1988
    Staff View
    ISSN:
    1077-3118
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    A new technique for producing thin films of the high-temperature perovskite superconductors, LnBa2Cu3O7−x, where Ln represents a rare-earth element, using spin-on metalorganic precursors is described. Pyrolysis of the spin-coated films, consisting of mixed metal (2-ethyl hexanoates), leads to black films up to several microns thick whose degree of orientation is a function of the processing temperature and duration. Representative films of YBa2Cu3O7−x on MgO begin to exhibit orientation with the c axis perpendicular to the film plane at heat treatments above 900 °C. The superconducting behavior of a highly oriented film produced at 990 °C is characterized by Tc(onset)=89 K, Tc(R=0)=77 K, and Jc=103 A cm−2 at 65 K.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.99038

    Articles: DFG German National Licenses