Search Results - (Author, Cooperation:M. G. Kim)
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1Kim, W., Lee, S., Kim, H. S., Song, M., Cha, Y. H., Kim, Y.-H., Shin, J., Lee, E.-S., Joo, Y., Song, J. J., Choi, E. J., Choi, J. W., Lee, J., Kang, M., Yook, J. I., Lee, M. G., Kim, Y.-S., Paik, S., Kim, H.
Cold Spring Harbor Laboratory Press
Published 2018Staff ViewPublication Date: 2018-03-06Publisher: Cold Spring Harbor Laboratory PressElectronic ISSN: 1549-5469Topics: BiologyMedicinePublished by: -
2M. Zemcov ; J. Smidt ; T. Arai ; J. Bock ; A. Cooray ; Y. Gong ; M. G. Kim ; P. Korngut ; A. Lam ; D. H. Lee ; T. Matsumoto ; S. Matsuura ; U. W. Nam ; G. Roudier ; K. Tsumura ; T. Wada
American Association for the Advancement of Science (AAAS)
Published 2014Staff ViewPublication Date: 2014-11-08Publisher: American Association for the Advancement of Science (AAAS)Print ISSN: 0036-8075Electronic ISSN: 1095-9203Topics: BiologyChemistry and PharmacologyComputer ScienceMedicineNatural Sciences in GeneralPhysicsPublished by: -
3Kwon, S. M., Won, J. K., Jo, J.-W., Kim, J., Kim, H.-J., Kwon, H.-I., Kim, J., Ahn, S., Kim, Y.-H., Lee, M.-J., Lee, H.-i., Marks, T. J., Kim, M.-G., Park, S. K.
American Association for the Advancement of Science (AAAS)
Published 2018Staff ViewPublication Date: 2018-04-14Publisher: American Association for the Advancement of Science (AAAS)Electronic ISSN: 2375-2548Topics: Natural Sciences in GeneralPublished by: -
4Park, H.-S. ; Kim, M.-G. ; Youn, S.-J. ; Kim, W.-S. ; Lee, D.-Y. ; Lee, J.-H. ; Yang, J.-M. ; Lee, E.-S.
Oxford, UK : Blackwell Science Ltd
Published 2005Staff ViewISSN: 1365-2230Source: Blackwell Publishing Journal Backfiles 1879-2005Topics: MedicineType of Medium: Electronic ResourceURL: -
5Kim, M. G. ; Kwon, S. D. ; Kim, C. H. ; Lee, J. B. ; Choe, Byung-Doo ; Lim, H.
Woodbury, NY : American Institute of Physics (AIP)
Published 1993Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: We report the observation of a new type of intrinsic defect in n-In0.5Ga0.5P which can be generated by recombination enhanced defect reaction (REDR) mechanism. It is observed that the increases of the concentrations of this defect and of another native defect due to REDR have nearly linear time dependence before saturation. This observation and other experimental results suggest that the two observed defects are complex defects. Other electrical properties of these defects such as alloy broadening effect on the thermal ionization energy are also described.Type of Medium: Electronic ResourceURL: -
6Dworzanski, J.P. ; Kim, M.-G. ; Peter Snyder, A. ; Arnold, N.S. ; Meuzelaar, H.L.C.
Amsterdam : ElsevierStaff ViewISSN: 0003-2670Keywords: Chromatography ; Field-portable instruments ; High speed vapor sampling ; Ion mobility spectrometry ; PreconcentrationSource: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002Topics: Chemistry and PharmacologyType of Medium: Electronic ResourceURL: -
7Staff View
ISSN: 0040-4039Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002Topics: Chemistry and PharmacologyType of Medium: Electronic ResourceURL: -
8Staff View
ISSN: 0040-4039Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002Topics: Chemistry and PharmacologyType of Medium: Electronic ResourceURL: