Search Results - (Author, Cooperation:M. C. Reuter)
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1D. Jacobsson ; F. Panciera ; J. Tersoff ; M. C. Reuter ; S. Lehmann ; S. Hofmann ; K. A. Dick ; F. M. Ross
Nature Publishing Group (NPG)
Published 2016Staff ViewPublication Date: 2016-03-18Publisher: Nature Publishing Group (NPG)Print ISSN: 0028-0836Electronic ISSN: 1476-4687Topics: BiologyChemistry and PharmacologyMedicineNatural Sciences in GeneralPhysicsPublished by: -
2Y. C. Chou ; K. Hillerich ; J. Tersoff ; M. C. Reuter ; K. A. Dick ; F. M. Ross
American Association for the Advancement of Science (AAAS)
Published 2014Staff ViewPublication Date: 2014-01-18Publisher: American Association for the Advancement of Science (AAAS)Print ISSN: 0036-8075Electronic ISSN: 1095-9203Topics: BiologyChemistry and PharmacologyComputer ScienceMedicineNatural Sciences in GeneralPhysicsPublished by: -
3Tromp, R. M. ; Copel, M. ; Reuter, M. C. ; Horn von Hoegen, M. ; Speidell, J. ; Koudijs, R.
[S.l.] : American Institute of Physics (AIP)
Published 1991Staff ViewISSN: 1089-7623Source: AIP Digital ArchiveTopics: PhysicsElectrical Engineering, Measurement and Control TechnologyNotes: We describe a new two-dimensional detector for the detection of ions scattered from a solid target, analyzed in energy and scattering angle by a toroidal electrostatic analyzer. The detector resolves the scattering angle with a resolution of 0.4° over a range of 25°, and the ion energy with a resolution of 120 eV over a range of 2000 eV, at 100 keV ion energy. The energy resolution of the spectrometer was improved with a factor 4 relative to its previous performance with a one-dimensional scattering angle detector, while−at the same time−the dose efficiency (count/μC) was improved by a factor 5–10.Type of Medium: Electronic ResourceURL: -
4LeGoues, F. K. ; Tersoff, J. ; Reuter, M. C. ; Hammar, M. ; Tromp, R.
Woodbury, NY : American Institute of Physics (AIP)
Published 1995Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: Strained layers generally relax by dislocation glide. Here, using UHV-TEM, we study growth of Ge islands on Si(001) at (approximately-less-than)350 °C. We find that, although conventional relaxation (i.e., via glide of 60° dislocations) is suppressed, the islands grow relaxed from the outset, by direct incorporation of sessile 90° dislocations into the edge of the growing island. Paradoxically, the low-temperature islands are more fully relaxed than those grown at higher temperature. © 1995 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
5Falta, J. ; Reuter, M. C. ; Tromp, R. M.
Woodbury, NY : American Institute of Physics (AIP)
Published 1994Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: We have used low-energy electron microscopy to investigate the growth of Ge on GaAs(001)-c(2×8). Depending on the growth temperature we find a wide variety of growth modes: At 420 °C growth proceeds layer by layer, with nucleation of two-dimensional (2D) islands smaller than 150 A(ring) across. An increase of growth temperature to 450–480 °C enhances surface diffusion and results in formation of large anisotropic 2D islands on wide terraces along with denuded zones—and step flow—along the step edges. Further temperature increase transforms the growth mode to step flow. At 540 °C the growth mode becomes unstable, resulting in a roughening of the Ge surface.Type of Medium: Electronic ResourceURL: -
6Reuter, M. C. ; Tromp, R. M. ; Meyer zu Heringdorf, Frank-J.
[s.l.] : Macmillian Magazines Ltd.
Published 2001Staff ViewISSN: 1476-4687Source: Nature Archives 1869 - 2009Topics: BiologyChemistry and PharmacologyMedicineNatural Sciences in GeneralPhysicsNotes: [Auszug] The recent demonstration of single-crystal organic optoelectronic devices has received widespread attention. But practical applications of such devices require the use of inexpensive organic films deposited on a wide variety of substrates. Unfortunately, the physical properties of these organic ...Type of Medium: Electronic ResourceURL: