Search Results - (Author, Cooperation:M. C. Hersam)
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1Latest Papers from Table of Contents or Articles in PressStaff View
Publication Date: 2015-05-01Publisher: Nature Publishing Group (NPG)Print ISSN: 0028-0836Electronic ISSN: 1476-4687Topics: BiologyChemistry and PharmacologyMedicineNatural Sciences in GeneralPhysicsPublished by: -
2Latest Papers from Table of Contents or Articles in PressA. J. Mannix ; X. F. Zhou ; B. Kiraly ; J. D. Wood ; D. Alducin ; B. D. Myers ; X. Liu ; B. L. Fisher ; U. Santiago ; J. R. Guest ; M. J. Yacaman ; A. Ponce ; A. R. Oganov ; M. C. Hersam ; N. P. Guisinger
American Association for the Advancement of Science (AAAS)
Published 2015Staff ViewPublication Date: 2015-12-19Publisher: American Association for the Advancement of Science (AAAS)Print ISSN: 0036-8075Electronic ISSN: 1095-9203Topics: BiologyChemistry and PharmacologyComputer ScienceMedicineNatural Sciences in GeneralPhysicsKeywords: Anisotropy ; Boron/*chemistry ; Fullerenes/*chemistry ; Silver/chemistry ; VacuumPublished by: -
3Articles: DFG German National LicensesHersam, M. C. ; Hoole, A. C. F. ; O'Shea, S. J. ; Welland, M. E.
Woodbury, NY : American Institute of Physics (AIP)
Published 1998Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: Using an atomic force microscope equipped with a conducting diamond tip, the surface potential on a current carrying gold nanowire was measured with microvolt potential sensitivity and nanometer spatial resolution. Potentiometry images illustrate the stages of failure of nanowires subjected to current stressing. During this failure process, a discontinuity in the potential gradient and an enhanced resistance region were observed at the failure site until a complete fracture was formed. By increasing the repulsive force and accurately positioning the tip, gold could be manipulated into the nanoscale fracture so that the electrical conductivity of the nanowire was regained. © 1998 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
4Articles: DFG German National LicensesStaff View
ISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: The passivation of the Si(100) surface with H and D is studied with scanning tunneling microscopy (STM). During the passivation process, the clean Si(100) surface is exposed to a gas phase mixture of atomic H and D. By directly observing the dramatic isotopic difference in STM-induced electron stimulated desorption rates, the relative surface concentrations of H and D is discerned with atomic resolution. The ratio of D to H on the Si(100) surface is found to vary by more than an order of magnitude following monolayer passivation at temperatures between 300 and 700 K. A statistical thermodynamics model attributes this behavior to the difference in the vibrational frequencies of H and D on silicon surfaces. © 2002 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
5Articles: DFG German National LicensesHersam, M. C. ; Guisinger, N. P. ; Lyding, J. W.
Woodbury, NY : American Institute of Physics (AIP)
Published 2001Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: The in situ hydrogen-passivated Si(100)-2×1 surface is characterized with x-ray photoelectron spectroscopy (XPS) and ultra-high-vacuum scanning tunneling microscopy (STM) following exposure to ambient conditions. The XPS measurements illustrate the chemical inertness of this surface as the onset of oxidation is not observed for the first 40 h of ambient exposure. After 15 min of contact with atmospheric conditions, the STM images reveal that the Si(100)-2×1:H surface remains atomically pristine. This exceptional stability is of relevance to a wide variety of applications that require ultrapure Si(100) substrates (e.g., microelectronics, semiconductor processing, nanofabrication, etc.). © 2001 American Institute of Physics.Type of Medium: Electronic ResourceURL: