Search Results - (Author, Cooperation:M. Bonelli)
-
1R. Roychoudhuri ; K. Hirahara ; K. Mousavi ; D. Clever ; C. A. Klebanoff ; M. Bonelli ; G. Sciume ; H. Zare ; G. Vahedi ; B. Dema ; Z. Yu ; H. Liu ; H. Takahashi ; M. Rao ; P. Muranski ; J. G. Crompton ; G. Punkosdy ; D. Bedognetti ; E. Wang ; V. Hoffmann ; J. Rivera ; F. M. Marincola ; A. Nakamura ; V. Sartorelli ; Y. Kanno ; L. Gattinoni ; A. Muto ; K. Igarashi ; J. J. O'Shea ; N. P. Restifo
Nature Publishing Group (NPG)
Published 2013Staff ViewPublication Date: 2013-06-04Publisher: Nature Publishing Group (NPG)Print ISSN: 0028-0836Electronic ISSN: 1476-4687Topics: BiologyChemistry and PharmacologyMedicineNatural Sciences in GeneralPhysicsKeywords: Animals ; Autoimmunity/immunology ; Basic-Leucine Zipper Transcription Factors/deficiency/genetics/*metabolism ; CD4-Positive T-Lymphocytes/cytology/immunology/metabolism ; Cell Differentiation/genetics/immunology ; Female ; Forkhead Transcription Factors/genetics/metabolism ; Homeostasis/genetics/*immunology ; Humans ; Immune Tolerance/genetics/immunology ; Inflammation/genetics/immunology/mortality/pathology ; Mice ; Mice, Inbred C57BL ; Mice, Knockout ; T-Lymphocytes, Regulatory/cytology/drug effects/*immunology/metabolism ; Transforming Growth Factor beta/pharmacologyPublished by: -
2Laidani, N. ; Bonelli, M. ; Miotello, A. ; Guzman, L. ; Calliari, L. ; Elena, M. ; Bertoncello, R. ; Glisenti, A. ; Capelletti, R. ; Ossi, P.
[S.l.] : American Institute of Physics (AIP)
Published 1993Staff ViewISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: The effects of 30 keV N+ implantation in amorphous silicon carbide films deposited on silicon substrates by rf sputtering over a fluence range of 1×1016–2×1017 ions cm−2, are studied by means of x-ray photoelectron spectroscopy (XPS), Auger electron spectroscopy (AES), and infrared (IR) absorption techniques. The ion-induced modifications of these films have been investigated on the basis of the chemical state evolution of Si, C, and N (using XPS and AES) and on the basis of the vibrational features of the films components (using IR absorption). The results show that implanted N bonds Si selectively, substituting the C atoms in the silicon carbide, and the C substitution by N results in a composite layer of carbonitrides and free C. An ion-induced C transport has also been observed and correlations are established between the formation of silicon carbonitrides and the dynamical behavior of the C in the implanted layer. The latter appears as a superposition of (a) a chemically induced atomic redistribution, required by local stoichiometry and space-filling possibilities in an amorphous network, and (b) a radiation-induced redistribution, a mechanism that is prevailing at low-fluence implantation.Type of Medium: Electronic ResourceURL: -
3Staff View
ISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: High-power excimer-laser irradiation (248 nm wavelength) at different energy densities (1.3, 2.3, and 4.6 J/cm2) has been performed on silver-exchanged soda-lime glass. Silver nanoclusters have been obtained with average size depending on the energy density of the laser pulses. The excimer laser pulses induce either the reduction of the silver ions or the heating of the irradiated glass matrix. The high mobility of silver atoms in the liquid phase and the segregation effects at the liquid–solid interface can explain the observed silver atoms clustering. © 2001 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
4Bonelli, M. ; Calliari, L. ; Elena, M. ; Ghabashy, M.A. ; Guzman, L.A. ; Miotello, A. ; Ossi, P.M.
Amsterdam : ElsevierStaff ViewISSN: 0257-8972Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision MechanicsPhysicsType of Medium: Electronic ResourceURL: -
5Staff View
ISSN: 0042-207XSource: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision MechanicsPhysicsType of Medium: Electronic ResourceURL: -
6Bonelli, M. ; Ferrari, A.C. ; Fioravanti, A. ; Li Bassi, A. ; Miotello, A. ; Ossi, P.M.
Springer
Published 2002Staff ViewISSN: 1434-6036Keywords: PACS. 81.15Fg Laser deposition – 78.30.Ly Disordered solids – 68.60.-p Physical properties of thin films, nonelectronic – 62.20.Qp Tribology and hardnessSource: Springer Online Journal Archives 1860-2000Topics: PhysicsNotes: Abstract: Tetrahedral amorphous carbon films have been produced by pulsed laser deposition, at a wavelength of 248 nm, ablating highly oriented pyrolytic graphite at room temperature, in a 10-2 Pa vacuum, at fluences ranging between 0.5 and 35 Jcm-2. Both (100) Si wafers and wafers covered with a SiC polycrystalline interlayer were used as substrates. Film structure was investigated by Raman spectroscopy at different excitation wavelength from 633 nm to 229 nm and by transmission Electron Energy Loss Spectroscopy. The films, which are hydrogen-free, as shown by Fourier Transform Infrared Spectroscopy, undergo a transition from mainly disordered graphitic to up to 80% tetrahedral amorphous carbon (ta-C) above a threshold laser fluence of 5 J cm-2. By X-ray reflectivity roughness, density and cross-sectional layering of selected samples were studied. Film hardness as high as 70 GPa was obtained by nanoindentation on films deposited with the SiC interlayer. By scratch test film adhesion and friction coefficients between 0.06 and 0.11 were measured. By profilometry we obtained residual stress values not higher than 2 GPa in as-deposited 80% sp3 ta-C films.Type of Medium: Electronic ResourceURL: -
7Elena, M. ; Guzman, L. ; Calliari, L. ; Moro, L. ; Steiner, A. ; Miotello, A. ; Bonelli, M. ; Capelletti, R. ; Ossi, P.M.
Amsterdam : ElsevierStaff ViewISSN: 0040-6090Keywords: Boron nitride ; Infrared spectroscopy ; Physical vapour deposition ; Structural propertiesSource: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002Topics: PhysicsType of Medium: Electronic ResourceURL: -
8Elena, M. ; Bonelli, M. ; Bottani, C.E. ; Ghislotti, G. ; Miotello, A. ; Mutti, P. ; Ossi, P.M.
Amsterdam : ElsevierStaff ViewISSN: 0040-6090Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002Topics: PhysicsType of Medium: Electronic ResourceURL: -
9Miotello, A. ; Calliari, L. ; Kelly, R. ; Laidani, N. ; Bonelli, M. ; Guzman, L.
Amsterdam : ElsevierStaff ViewISSN: 0168-583XSource: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002Topics: PhysicsType of Medium: Electronic ResourceURL: