Search Results - (Author, Cooperation:L. Zhong)
-
1L. Zhong, S. Al Kenany, K. M. Backes, B. M. Brubaker, S. B. Cahn, G. Carosi, Y. V. Gurevich, W. F. Kindel, S. K. Lamoreaux, K. W. Lehnert, S. M. Lewis, M. Malnou, R. H. Maruyama, D. A. Palken, N. M. Rapidis, J. R. Root, M. Simanovskaia, T. M. Shokair, D. H. Speller, I. Urdinaran, and K. A. van Bibber
American Physical Society (APS)
Published 2018Staff ViewPublication Date: 2018-05-05Publisher: American Physical Society (APS)Print ISSN: 0556-2821Electronic ISSN: 1089-4918Topics: PhysicsKeywords: Particle Physics ExperimentsPublished by: -
2Chen, L., Bao, Y., Piekos, S. C., Zhu, K., Zhang, L., Zhong, X.-b.
The American Society for Pharmacology and Experimental Therapeutics (ASPET)
Published 2018Staff ViewPublication Date: 2018-06-02Publisher: The American Society for Pharmacology and Experimental Therapeutics (ASPET)Print ISSN: 0026-895XElectronic ISSN: 1521-0111Topics: Chemistry and PharmacologyMedicinePublished by: -
3V E Ovcharenko, K V Ivanov, A A Mohovikov, B Yu, Yu Xu and L Zhong
Institute of Physics (IOP)
Published 2018Staff ViewPublication Date: 2018-02-08Publisher: Institute of Physics (IOP)Print ISSN: 1755-1307Electronic ISSN: 1755-1315Topics: GeographyGeosciencesPhysicsPublished by: -
4Staff View
Publication Date: 2018-05-17Publisher: Institute of Physics (IOP)Print ISSN: 1757-8981Electronic ISSN: 1757-899XTopics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision MechanicsPublished by: -
5Staff View
Publication Date: 2014-08-15Publisher: Nature Publishing Group (NPG)Print ISSN: 0028-0836Electronic ISSN: 1476-4687Topics: BiologyChemistry and PharmacologyMedicineNatural Sciences in GeneralPhysicsPublished by: -
6Franklin L. Zhong, Kim Robinson, Daniel Eng Thiam Teo, Kiat-Yi Tan, Chrissie Lim, Cassandra R. Harapas, Chien-Hsiung Yu, William H. Xie, Radoslaw M. Sobota, Veonice Bijin Au, Richard Hopkins, Andrea D'Osualdo, John C. Reed, John E. Connolly, Seth L. Masters, Bruno Reversade
The American Society for Biochemistry and Molecular Biology (ASBMB)
Published 2018Staff ViewPublication Date: 2018-12-08Publisher: The American Society for Biochemistry and Molecular Biology (ASBMB)Print ISSN: 0021-9258Electronic ISSN: 1083-351XTopics: BiologyChemistry and PharmacologyPublished by: -
7X. B. Li, B. Qiao, H. X. Chang, H. He, W. P. Yao, X. F. Shen, J. Wang, Y. Xie, C. L. Zhong, C. T. Zhou, S. P. Zhu, and X. T. He
American Physical Society (APS)
Published 2018Staff ViewPublication Date: 2018-11-16Publisher: American Physical Society (APS)Print ISSN: 1050-2947Electronic ISSN: 1094-1622Topics: PhysicsKeywords: Fundamental conceptsPublished by: -
8L. F. Batista ; M. F. Pech ; F. L. Zhong ; H. N. Nguyen ; K. T. Xie ; A. J. Zaug ; S. M. Crary ; J. Choi ; V. Sebastiano ; A. Cherry ; N. Giri ; M. Wernig ; B. P. Alter ; T. R. Cech ; S. A. Savage ; R. A. Reijo Pera ; S. E. Artandi
Nature Publishing Group (NPG)
Published 2011Staff ViewPublication Date: 2011-05-24Publisher: Nature Publishing Group (NPG)Print ISSN: 0028-0836Electronic ISSN: 1476-4687Topics: BiologyChemistry and PharmacologyMedicineNatural Sciences in GeneralPhysicsKeywords: Cell Cycle Proteins/genetics/metabolism ; Cell Division ; Cellular Reprogramming ; Dyskeratosis Congenita/*genetics/*pathology ; Fibroblasts ; Gene Expression Regulation ; Humans ; Induced Pluripotent Stem Cells/*metabolism/*pathology ; Nuclear Proteins/genetics/metabolism ; RNA/genetics ; Telomerase/genetics/metabolism ; Telomere/enzymology/genetics/metabolism/*pathologyPublished by: -
9Staff View
Publication Date: 2018-04-19Publisher: Royal SocietyElectronic ISSN: 2054-5703Topics: Natural Sciences in GeneralKeywords: physical chemistry, spectroscopyPublished by: -
10Staff View
Publication Date: 2018-06-02Publisher: Institute of Physics (IOP)Print ISSN: 1674-1137Topics: PhysicsPublished by: -
11Staff View
Publication Date: 2018-05-27Publisher: BMJ PublishingElectronic ISSN: 2044-6055Topics: MedicineKeywords: Open access, OncologyPublished by: -
12Chandra, A., Wang, L., Young, T., Zhong, L., Tseng, W.-J., Levine, M. A., Cengel, K., Liu, X. S., Zhang, Y., Pignolo, R. J., Qin, L.
The Federation of American Societies for Experimental Biology (FASEB)
Published 2018Staff ViewPublication Date: 2018-01-03Publisher: The Federation of American Societies for Experimental Biology (FASEB)Print ISSN: 0892-6638Electronic ISSN: 1530-6860Topics: BiologyPublished by: -
13Staff View
Publication Date: 2018-02-12Publisher: Institute of Physics (IOP)Print ISSN: 1674-1137Topics: PhysicsPublished by: -
14Staff View
Publication Date: 2018-07-27Publisher: Institute of Physics (IOP)Print ISSN: 1674-1137Topics: PhysicsPublished by: -
15Staff View
ISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: Out-diffusion of oxygen in Czochralski silicon wafers annealed at 1000 and 1200 °C under a hydrogen ambient is studied with secondary ion mass spectroscopy (SIMS). The oxygen diffusivity, 1.41×102 exp(−3.1 eV/kT) cm2 s−1, obtained from fitting the oxygen SIMS profile is significantly larger than normally expected. This hydrogen enhancement effect is found at temperatures much higher than those reported (〈500 °C) in literature, and is attributed to the direct interaction between in-diffused hydrogen and interstitial oxygen atoms. Estimation of the oxygen diffusivity made from hydrogen solubility and diffusivity data is in reasonable agreement with the experimental result. It is suggested that the intrinsic/internal gettering may benefit from the enhancement effect as well as a very low surface oxygen concentration, which is also observed in this work, due to hydrogen treatment.Type of Medium: Electronic ResourceURL: -
16Staff View
ISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: A temperature-controlled laser-microwave photoconductance lifetime measurement technique combined with ultraviolet irradiation is used to investigate the electronic transfer process at charge trapping sites, the K centers, in low pressure chemical vapor deposited nitride film on a silicon substrate in the temperature range 300–500 K. A relationship between the lifetime and the space charge in the dielectric film is discussed in order to correlate the lifetime data with electronic transfer process on K centers. An isothermal transfer process is then found following a stretched exponential function of annealing time with a temperature-independent stretched factor around 0.14 and a time constant characteristic of activation energy around 0.81 eV.Type of Medium: Electronic ResourceURL: -
17Mah, S. P. ; Zhong, L. T. ; Liu, Y. ; Roghani, A. ; Edwards, R. H. ; Bredesen, D. E.
Oxford, UK : Blackwell Publishing Ltd
Published 1993Staff ViewISSN: 1471-4159Source: Blackwell Publishing Journal Backfiles 1879-2005Topics: MedicineNotes: Abstract: During development, many neuronal populations undergo a process of normal, programmed cell death, or apoptosis. Trophic factors regulate this process, but the mechanism by which they suppress apoptosis remains unclear. In the immune system, recent studies have implicated the protooncogene bcl-2 in the lymphocyte survival response to growth factors. To determine whether a similar survival pathway exists in a neuroendocrine cell type, we have expressed bcl-2 in the rat pheochromocytoma PC12 cell line and found that it abrogates the requirement for stimulation by growth factors to survive. bcl-2 expression also substantially delays the onset of injury by the calcium ionophore A23187.Type of Medium: Electronic ResourceURL: -
18Lau, W. S. ; Zhong, L. ; Lee, Allen ; See, C. H.
Woodbury, NY : American Institute of Physics (AIP)
Published 1997Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: Defect states responsible for leakage current in ultrathin (physical thickness 〈10 nm) tantalum pentoxide (Ta2O5) films were measured with a novel zero-bias thermally stimulated current technique. It was found that defect states A, whose activation energy was estimated to be about 0.2 eV, can be more efficiently suppressed by using N2O rapid thermal annealing (RTA) instead of using O2 RTA for postdeposition annealing. The leakage current was also smaller for samples with N2O RTA than those with O2 RTA for postdeposition annealing. Hence, defect states A are quite likely to be important in causing leakage current. © 1997 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
19Staff View
ISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: Minority-carrier lifetime after oxidation is investigated with a laser-microwave photoconductance (LM-PC) method for silicon wafers deliberately contaminated with Cu or Fe of different surface concentrations. The secondary ion mass spectroscopy (SIMS) depth profile clearly correlate the effect of those impurities on the bulk and surface components, which are obtained with a recently developed algorithm, of the effective lifetime. Copper impurities diffused from the wafer surface segregate at the SiO2/Si interface and near-interface region, and the surface component becomes dominant at high-surface contaminations. On the other hand, most of the iron segregates in the oxide layer and the residual iron diffuses into the bulk region, and therefore the bulk component dominates the effective lifetime.Type of Medium: Electronic ResourceURL: -
20Zhong, L. ; Ando, K. ; Tsuya, H. ; Shimura, F.
Woodbury, NY : American Institute of Physics (AIP)
Published 1993Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: The effect of UV irradiation upon the recombination lifetime of silicon covered with chemical vapor deposition (CVD) oxide has been studied using a laser-microwave photoconductance (LM-PC) technique. It is found that the lifetime changes little after the first UV irradiation, but dramatically decreases following thermal annealing at 500 K for 1 h. Moreover, the lifetime can be cycled up and down by repeated irradiation and thermal annealing. A comparison is made of the UV irradiation effect upon the lifetime of silicon wafers covered with a variety of different dielectric films. It is suggested that UV rechargeable defects are present in a CVD oxide film, like in native oxide and CVD nitride, but are absent in thermal oxide. Finally, it is emphasized that the noncontact LM-PC technique can be a powerful tool to characterize the defects in dielectric films on silicon wafers.Type of Medium: Electronic ResourceURL: