Search Results - (Author, Cooperation:L. Vallier)

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  1. 1
    Staff View
    Publication Date:
    2011-10-14
    Publisher:
    Nature Publishing Group (NPG)
    Print ISSN:
    0028-0836
    Electronic ISSN:
    1476-4687
    Topics:
    Biology
    Chemistry and Pharmacology
    Medicine
    Natural Sciences in General
    Physics
    Keywords:
    Animals ; Cell Line ; DNA Transposable Elements/genetics ; Hepatocytes/metabolism/transplantation ; Humans ; Induced Pluripotent Stem Cells/*physiology ; Liver/cytology ; Mice ; Serum Albumin/genetics/metabolism ; *Targeted Gene Repair ; Time Factors ; alpha 1-Antitrypsin/*genetics/metabolism ; alpha 1-Antitrypsin Deficiency/*genetics
    Published by:
    http://www.nature.com/

    Latest Papers from Table of Contents or Articles in Press
  2. 2
    Four, S. ; Devine, R. A. B. ; Vallier, L.

    [S.l.] : American Institute of Physics (AIP)
    Published 1998
    Staff View
    ISSN:
    1089-7550
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    The anodization of aluminium in a microwave excited O2 plasma has been studied at temperatures less than 100 °C. Thirty nanometers of oxide were grown in times substantially less than one hour. The growth kinetics follow those expected using the constant current growth mode. X-ray diffraction, Fourier transform infrared absorption, X-ray photoelectron spectroscopy, Auger electron spectroscopy, and electrical studies were carried out. The oxide is amorphous and stoichiometric, the as-grown films have high electrical conductivity. The method may be well suited for the formation of protective coatings. © 1998 American Institute of Physics.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.367393

    Articles: DFG German National Licenses
  3. 3
    Pichot, M. ; Durandet, A. ; Pelletier, J. ; Arnal, Y. ; Vallier, L.

    [S.l.] : American Institute of Physics (AIP)
    Published 1988
    Staff View
    ISSN:
    1089-7623
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Electrical Engineering, Measurement and Control Technology
    Notes:
    Distributed electron cyclotron resonance or DECR, a new plasma excitation technique well adapted to microwave multipolar plasmas, is described. The novel reactor concept is based upon the use of several microwave linear applicators working at the ECR mode along the multipolar confinement magnets. At a microwave frequency of 2.45 GHz, large volumes of highly homogeneous plasmas with an electron temperature of the order of 3 eV and ion densities better than 1011 cm−3 are currently being produced in DECR reactors.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.1139728

    Articles: DFG German National Licenses
  4. 4
    Joubert, O. ; Burke, R. ; Vallier, L. ; Martinet, C. ; Devine, R. A. B.

    Woodbury, NY : American Institute of Physics (AIP)
    Published 1993
    Staff View
    ISSN:
    1077-3118
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    Silicon dioxide films have been deposited using a SiH4+O2 microwave plasma excited by distributed electron cyclotron resonance. The ratio of flow rates of the reactive gas was O2/SiH4∼7. The substrate was not heated intentionally (T〈150 °C). The effect of ion energy during deposition, in the 10–150 eV range, has been studied through refractive index, infrared absorption bands, chemical etch rate, and electrical measurements. For ion energies (approximately-greater-than)50 eV, many of the film characteristics are close to those of thermal SiO2
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.108973

    Articles: DFG German National Licenses
  5. 5
    Devine, R. A. B. ; Vallier, L. ; Autran, J. L. ; Paillet, P. ; Leray, J. L.

    Woodbury, NY : American Institute of Physics (AIP)
    Published 1996
    Staff View
    ISSN:
    1077-3118
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    High quality Ta2O5 thin films have been obtained from TaF5 and O2 using a microwave excited electron cyclotron resonance plasma at low pressure (∼2 mTorr). Physical and electrical measurements reveal that the as-deposited amorphous films have excellent properties: refractive indices ∼2.16, dielectric constants ∼25, and leakage currents 〈10−10 A cm−2 at 2.5 V (0.3 MV cm−1, 85 nm thick, 13 nm SiO2 equivalent). Trapping and conduction properties of these layers have also been investigated, showing a reversible electron trapping and a trap-limited Poole–Frenkel effect. © 1996 American Institute of Physics.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.116663

    Articles: DFG German National Licenses
  6. 6
    Vallier, L. ; Desvoivres, L. ; Bonvalot, M. ; Joubert, O.

    Woodbury, NY : American Institute of Physics (AIP)
    Published 1999
    Staff View
    ISSN:
    1077-3118
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    We have evidenced an unexpected behavior of thin gate oxide layers (thickness in the range 2–4 nm) exposed to plasma processes developed for the patterning of 0.1 μm silicon gates. During the low-energy overetch step of the process, an oxidation of the bulk underlying silicon takes place, leading to the growth of the gate oxide layer. Experimental results obtained from in situ kinetic and spectroscopic ellipsometry measurements and supported by x-ray photoelectron spectroscopy analyses are presented to highlight this phenomenon. © 1999 American Institute of Physics.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.124599

    Articles: DFG German National Licenses
  7. 7
    Staff View
    ISSN:
    0040-6090
    Source:
    Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics:
    Physics
    Type of Medium:
    Electronic Resource
    URL:
    http://linkinghub.elsevier.com/retrieve/pii/0040-6090(94)90435-9

    Articles: DFG German National Licenses