Search Results - (Author, Cooperation:L. V. Butov)
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1J. R. Leonard; A. A. High; A. T. Hammack; M. M. Fogler; L. V. Butov; K. L. Campman; A. C. Gossard
Nature Publishing Group (NPG)
Published 2018Staff ViewPublication Date: 2018-06-05Publisher: Nature Publishing Group (NPG)Electronic ISSN: 2041-1723Topics: BiologyChemistry and PharmacologyNatural Sciences in GeneralPhysicsPublished by: -
2A. A. High ; J. R. Leonard ; A. T. Hammack ; M. M. Fogler ; L. V. Butov ; A. V. Kavokin ; K. L. Campman ; A. C. Gossard
Nature Publishing Group (NPG)
Published 2012Staff ViewPublication Date: 2012-03-23Publisher: Nature Publishing Group (NPG)Print ISSN: 0028-0836Electronic ISSN: 1476-4687Topics: BiologyChemistry and PharmacologyMedicineNatural Sciences in GeneralPhysicsPublished by: -
3Lai, C. W. ; Ivanov, A. L. ; Gossard, A. C. ; Chemla, D. S. ; Butov, L. V.
[s.l.] : Nature Publishing Group
Published 2002Staff ViewISSN: 1476-4687Source: Nature Archives 1869 - 2009Topics: BiologyChemistry and PharmacologyMedicineNatural Sciences in GeneralPhysicsNotes: [Auszug] An exciton is an electron–hole bound pair in a semiconductor. In the low-density limit, it is a composite Bose quasi-particle, akin to the hydrogen atom. Just as in dilute atomic gases, reducing the temperature or increasing the exciton density increases the ...Type of Medium: Electronic ResourceURL: -
4Staff View
ISSN: 1476-4687Source: Nature Archives 1869 - 2009Topics: BiologyChemistry and PharmacologyMedicineNatural Sciences in GeneralPhysicsNotes: [Auszug] There is a rich variety of quantum liquids—such as superconductors, liquid helium and atom Bose–Einstein condensates—that exhibit macroscopic coherence in the form of ordered arrays of vortices. Experimental observation of a macroscopically ordered electronic state in ...Type of Medium: Electronic ResourceURL: -
5Staff View
ISSN: 1090-6509Source: Springer Online Journal Archives 1860-2000Topics: PhysicsNotes: Abstract The kinetics of indirect photoluminescence of GaAs/AlxGa1−x As double quantum wells, characterized by a random potential with a large amplitude (the linewidth of the indirect photoluminescence is comparable to the binding energy of an indirect exciton) in magnetic fields B≤12 T at low temperatures T≥1.3 K is investigated. It is found that the indirect-recombination time increases with the magnetic field and decreases with increasing temperature. It is shown that the kinetics of indirect photoluminescence corresponds to single-exciton recombination in the presence of a random potential in the plane of the double quantum wells. The variation of the nonradiative recombination time is discussed in terms of the variation of the transport of indirect excitons to nonradiative recombination centers, and the variation of the radiative recombination time is discussed in terms of the variation of the population of optically active excitonic states and the localization radius of indirect excitons. The photoluminescence kinetics of indirect excitons, which is observed in the studied GaAs/AlxGa1−x As double quantum wells for which the random potential has a large amplitude, is qualitatively different from the photoluminescence kinetics of indirect excitons in AlAs/GaAs wells and GaAs/AlxGa1−x As double quantum wells with a random potential having a small amplitude. The temporal evolution of the photoluminescence spectra in the direct and indirect regimes is studied. It is shown that the evolution of the photoluminescence spectra corresponds to excitonic recombination in a random potential.Type of Medium: Electronic ResourceURL: -
6Staff View
ISSN: 1090-6509Source: Springer Online Journal Archives 1860-2000Topics: PhysicsNotes: Abstract The evolution of indirect exciton luminescence in AlAs/GaAs coupled quantum wells after excitation by pulsed laser radiation has been studied in strong magnetic fields (B⩽12 T) at low temperatures (T⩾1.3 K), both in the normal regime and under conditions of anomalously fast exciton transport, which is an indication of the onset of exciton superfluidity. The energy relaxation rate of indirect excitons measured in the range of relaxation times between several and several hundreds of nanoseconds is found to be controlled by the properties of the exciton transport, specifically, this parameter increases with the coefficient of excitonic diffusion. This behavior is qualitatively explained in terms of migration of excitons between local minima of the random potential in the plane of the quantum well.Type of Medium: Electronic ResourceURL: