Search Results - (Author, Cooperation:J. Zucker)

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  1. 1
    Staff View
    Publication Date:
    2018-01-10
    Publisher:
    National Academy of Sciences
    Print ISSN:
    0027-8424
    Electronic ISSN:
    1091-6490
    Topics:
    Biology
    Medicine
    Natural Sciences in General
    Published by:
    http://www.nasonline.org/

    Latest Papers from Table of Contents or Articles in Press
  2. 2
    Staff View
    Publication Date:
    2018-09-07
    Publisher:
    American Association for the Advancement of Science (AAAS)
    Print ISSN:
    0036-8075
    Electronic ISSN:
    1095-9203
    Topics:
    Biology
    Chemistry and Pharmacology
    Geosciences
    Computer Science
    Medicine
    Natural Sciences in General
    Physics
    Keywords:
    Medicine, Diseases
    Published by:
    http://www.aaas.org/

    Latest Papers from Table of Contents or Articles in Press
  3. 3
    S. Alavez ; M. C. Vantipalli ; D. J. Zucker ; I. M. Klang ; G. J. Lithgow
    Nature Publishing Group (NPG)
    Published 2011
    Staff View
    Publication Date:
    2011-04-01
    Publisher:
    Nature Publishing Group (NPG)
    Print ISSN:
    0028-0836
    Electronic ISSN:
    1476-4687
    Topics:
    Biology
    Chemistry and Pharmacology
    Medicine
    Natural Sciences in General
    Physics
    Keywords:
    Aging/*drug effects/metabolism/pathology ; Amyloid/*metabolism ; Amyloid beta-Peptides/antagonists & inhibitors/genetics/metabolism/toxicity ; Animals ; Autophagy ; Caenorhabditis elegans/drug effects/*metabolism/physiology ; Caenorhabditis elegans Proteins/metabolism ; Curcumin/pharmacology ; DNA-Binding Proteins/metabolism ; Dose-Response Relationship, Drug ; Forkhead Transcription Factors ; Homeostasis/*drug effects ; Humans ; Longevity/*drug effects/physiology ; Molecular Chaperones/metabolism ; Paralysis/drug therapy ; Phenotype ; Proteasome Endopeptidase Complex/metabolism ; Protein Binding/drug effects ; Proteins/*metabolism ; Survival Analysis ; Thiazoles/metabolism/*pharmacology ; Transcription Factors/metabolism
    Published by:
    http://www.nature.com/

    Latest Papers from Table of Contents or Articles in Press
  4. 4
    Staff View
    Publication Date:
    2013-07-05
    Publisher:
    Nature Publishing Group (NPG)
    Print ISSN:
    0028-0836
    Electronic ISSN:
    1476-4687
    Topics:
    Biology
    Chemistry and Pharmacology
    Medicine
    Natural Sciences in General
    Physics
    Keywords:
    Adaptation, Physiological ; Anoxia/*genetics/metabolism ; Bacterial Proteins/genetics/metabolism ; Binding Sites ; Chromatin Immunoprecipitation ; Gene Expression Profiling ; *Gene Regulatory Networks/genetics ; Genomics ; Lipid Metabolism/genetics ; Metabolic Networks and Pathways/*genetics ; Models, Biological ; Mycobacterium tuberculosis/drug effects/*genetics/*metabolism/physiology ; Oxygen/pharmacology ; Proteolysis ; RNA, Messenger/genetics/metabolism ; Reproducibility of Results ; Sequence Analysis, DNA ; Transcription Factors/genetics/metabolism ; Tuberculosis/metabolism/microbiology
    Published by:
    http://www.nature.com/

    Latest Papers from Table of Contents or Articles in Press
  5. 5
    Lee, D. ; Johnson, A. M. ; Zucker, J. E. ; Feldman, R. D. ; Austin, R. F.

    [S.l.] : American Institute of Physics (AIP)
    Published 1991
    Staff View
    ISSN:
    1089-7550
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    We explore the inhomogeneous and homogeneous contributions to the exciton linewidth that have allowed the recent observation of room temperature excitonic absorption in II–VI semiconductor quantum wells. Our measurements of the absorption spectrum in a range of CdxZn1−xTe/ZnTe quantum well heterostructures indicate that temperature-dependent contributions to the exciton linewidth are influenced by alloy composition.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.348895

    Articles: DFG German National Licenses
  6. 6
    Wang, Jin ; Leburton, J. P. ; Educato, J. L. ; Zucker, J. E.

    [S.l.] : American Institute of Physics (AIP)
    Published 1993
    Staff View
    ISSN:
    1089-7550
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    A numerical model is presented for the electronic properties of a novel InxGa1−xAs/In1−yAlyAs multiple-quantum-well waveguide modulator and a theoretical analysis of electron and hole escape mechanisms from the quantum well is developed. The influence of carriers and dopant ion charges on the band structure is simulated with a self-consistent Poisson–Schrödinger solver. The different escape mechanisms for both electrons and holes are: direct tunneling, phonon-assisted sequential tunneling, and thermionic emission. At high forward biases, the electron escape time limits the device speed, while at high reverse biases, heavy holes take a longer time than electrons for escaping the quantum well. For both particles, phonon-assisted sequential tunneling is a key mechanism in determining the device speed operation. The calculated escape times are in good agreement with the experimental data.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.352762

    Articles: DFG German National Licenses
  7. 7
    Lee, D. ; Zucker, J. E. ; Johnson, A. M. ; Feldman, R. D. ; Austin, R. F.

    Woodbury, NY : American Institute of Physics (AIP)
    Published 1991
    Staff View
    ISSN:
    1077-3118
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    We have studied CdZnTe/ZnTe multiple quantum wells which have alloy wells and strained layers. Low-temperature Raman spectra reveal a strain-induced shift of the longitudinal optic phonon energy consistent with a strain coherently shared between well and barrier layers. In resonant Raman profiles, we observe strong incoming and outgoing resonances at the n=1 heavy hole exciton transition that are well correlated with features in the photoluminescence and excitation spectra. Scattering by the CdTe-like phonon indicates an energy range for exciton localization by alloy fluctuations. The behavior of the ZnTe-like phonon near resonance is interpreted with exciton-polariton relaxation.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.105527

    Articles: DFG German National Licenses
  8. 8
    Lee, D. ; Zucker, J. E. ; Johnson, A. M. ; Feldman, R. D. ; Austin, R. F.

    Woodbury, NY : American Institute of Physics (AIP)
    Published 1990
    Staff View
    ISSN:
    1077-3118
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    We present the first measurements of room-temperature excitonic absorption saturation in a II-VI semiconductor quantum well. Strong room-temperature excitonic absorption in CdZnTe/ZnTe quantum wells is found to saturate at an incident optical intensity that is considerably higher than that for III-V quantum wells. We show that this phenomenon can be interpreted in terms of the smaller excitonic Bohr radius characteristic of wide-gap II-VI compounds.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.103513

    Articles: DFG German National Licenses
  9. 9
    Zucker, J. E. ; Jones, K. L. ; Young, M. G. ; Miller, B. I. ; Koren, U.

    Woodbury, NY : American Institute of Physics (AIP)
    Published 1989
    Staff View
    ISSN:
    1077-3118
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    We have utilized excitonic electrorefraction in reverse-biased InGaAsP/InP quantum well heterostructures to produce directional coupler switches with active lengths under 600 μm operating at 1.3 and 1.55 μm wavelengths.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.102037

    Articles: DFG German National Licenses
  10. 10
    Zucker, J. E. ; Bar-Joseph, I. ; Miller, B. I. ; Koren, U. ; Chemla, D. S.

    Woodbury, NY : American Institute of Physics (AIP)
    Published 1989
    Staff View
    ISSN:
    1077-3118
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    We demonstrate for the first time that large quantum-confined Stark effect can be obtained in high quality InGaAsP/InP quantum well p-i-n heterostructures. The compositional flexibility of this material system is particularly suited for quantum well device applications in optical communications systems operating between 1.55 and 1.3 μm. We measure the magnitude of the shift of the ground-state exciton transition with applied electric field and find that it is significantly enhanced over ternary wells. We have also determined the electro-optic intensity and phase modulation response in these structures.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.100821

    Articles: DFG German National Licenses
  11. 11
    Zucker, J. E. ; Wegener, M. ; Jones, K. L. ; Chang, T. Y. ; Sauer, N. ; Chemla, D. S.

    Woodbury, NY : American Institute of Physics (AIP)
    Published 1990
    Staff View
    ISSN:
    1077-3118
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    With a recently developed semiconductor heterostructure it has become possible to tune continuously the electron density in multiple quantum wells. Here we demonstrate the first electro-optic waveguide intensity modulators based on this concept. We achieve a 22 dB on/off ratio for 9 V applied at 1.54 μm wavelength in a rib waveguide electroabsorption modulator. Electrorefractive devices include a waveguide Mach–Zehnder interferometer with an active length 650 μm operating at 1.58 μm wavelength with 5.4 V half-wave voltage. We show that the operating voltage can be further reduced by operating the Mach–Zehnder modulators in push-pull configuration.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.103032

    Articles: DFG German National Licenses
  12. 12
    Zucker, J. E. ; Hendrickson, T. L. ; Burrus, C. A.

    Woodbury, NY : American Institute of Physics (AIP)
    Published 1988
    Staff View
    ISSN:
    1077-3118
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    We present the first absolute measurements of the electric-field-induced refractive index change in GaAs/AlGaAs quantum well waveguides. Phase and intensity modulation are characterized as a function of wavelength both above and below the n=1 exciton resonances.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.99236

    Articles: DFG German National Licenses
  13. 13
    Wang, Jin ; Zucker, J. E. ; Leburton, J. P. ; Chang, T. Y. ; Sauer, N. J.

    Woodbury, NY : American Institute of Physics (AIP)
    Published 1994
    Staff View
    ISSN:
    1077-3118
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    We successfully use a self-consistent physical model to predict device performance in a chopped quantum well electron transfer modulator. Large built-in electric fields for this structure cause delocalization of the electron wave function, requiring a careful evaluation of excitonic effects. Our calculations of both the electrical and electro-optic properties are in remarkably good agreement with the experimental data once Coulomb interactions are properly taken into account. © 1994 American Institute of Physics.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.112964

    Articles: DFG German National Licenses
  14. 14
    Chen, Y. ; Chiu, T. H. ; Zucker, J. E. ; Chu, S. N. G.

    Woodbury, NY : American Institute of Physics (AIP)
    Published 1993
    Staff View
    ISSN:
    1077-3118
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    We investigate selective area growth of lattice-matched InGaAsP/InP, and strained InGaAs/InP and InAsP/InP multiple quantum wells on SiO2-masked InP substrate by chemical beam epitaxy. This method can be used to produce quantum well p-i-n waveguide modulators with a single growth step. Photoluminescence measurements performed on waveguide stripes ranging from 1–50 μm in width reveal a red shift of the band edge with decreasing stripe width in InGaAsP/InP and InGaAs/InP quantum well systems, but no shift in InAsP/InP quantum wells for stripe widths larger than 1 μm. In addition, we find that this band-gap tunability is stripe orientation dependent.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.108612

    Articles: DFG German National Licenses
  15. 15
    Zucker, J. E. ; Jones, K. L. ; Miller, B. I. ; Young, M. G. ; Koren, U. ; Evankow, J. D. ; Burrus, C. A.

    Woodbury, NY : American Institute of Physics (AIP)
    Published 1992
    Staff View
    ISSN:
    1077-3118
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    We report the first interferometric waveguide intensity modulator with optical gain. A monolithically integrated compressively strained InGaAs quantum well amplifier provides a net 4.2 dB fiber-to-fiber gain at 120 mA forward bias. Reversed-biased InGaAsP quantum wells provide enhanced electrorefraction for the modulator in which we demonstrate a 3 dB electrical modulation bandwidth of 2.25 GHz. The voltage-length product for 180° phase shift is a record Vπ × L = 1.9 V mm. The total device length is under 2 mm.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.106684

    Articles: DFG German National Licenses
  16. 16
    Chiu, T. H. ; Zucker, J. E. ; Woodward, T. K.

    Woodbury, NY : American Institute of Physics (AIP)
    Published 1991
    Staff View
    ISSN:
    1077-3118
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    We show that extremely high quality InGaAsP/InP superlattices grown by chemical beam epitaxy meet the stringent requirements for optical modulator application in the wavelength range from 1 to 1.6 μm. Double crystal x-ray diffraction from multiple quantum well samples of 20 to 100 periods show that the satellite peaks have widths comparable to or narrower than the substrate peak width, which indicates very reproducible thickness and composition control along the growth direction. For optical modulation, a p–i–n waveguide structure consisting of 20 periods 90/90 A(ring) InGaAsP/InP exhibits very sharp excitonic feature and large quantum confined Stark effect near 1.5 μm. A room temperature exciton shift of about 25 meV has been measured for a bias voltage of 100 kV/cm in the photocurrent spectra.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.105675

    Articles: DFG German National Licenses
  17. 17
    Blum, O. ; Zucker, J. E. ; Chiu, T. H. ; Divino, M. D. ; Jones, K. L. ; Chu, S. N. G. ; Gustafson, T. K.

    Woodbury, NY : American Institute of Physics (AIP)
    Published 1991
    Staff View
    ISSN:
    1077-3118
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    We demonstrate a voltage-tunable distributed Bragg reflector grown by chemical beam epitaxy that utilizes 31 periods of alternating InGaAs/InP multiple quantum well and bulk InP quarter-wave layers. We obtain a differential change in transmission of 14% at 1570 nm wavelength for an applied field of 2.25×104 V/cm. We find good agreement between the experimental results and transmission spectra calculated using the optical transmission matrix method.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.105815

    Articles: DFG German National Licenses
  18. 18
    Chen, Y. ; Zucker, J. E. ; Chiu, T. H. ; Marshall, J. L. ; Jones, K. L.

    Woodbury, NY : American Institute of Physics (AIP)
    Published 1992
    Staff View
    ISSN:
    1077-3118
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    We demonstrate a novel electroabsorption modulator operating at 1.55 μm fabricated by single-step selective area chemical beam epitaxy with no post-growth processing. The modulation depth is 14.5 dB for a voltage swing of 10 V. In addition, the modulator has a tunable absorption edge determined by the size of the growth mask opening.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.107655

    Articles: DFG German National Licenses
  19. 19
    Lee, D. ; Johnson, A. M. ; Zucker, J. E. ; Burrus, C. A. ; Feldman, R. D. ; Austin, R. F.

    Woodbury, NY : American Institute of Physics (AIP)
    Published 1992
    Staff View
    ISSN:
    1077-3118
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    We demonstrate the first room-temperature operation of optically pumped II-VI quantum-well lasers in a quasi-continuous mode. This result shows promise for high repetition rate, short-pulse operation, and cw operation of future wide-gap II-VI diode lasers at room temperature.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.106554

    Articles: DFG German National Licenses
  20. 20
    Lee, D. ; Zucker, J. E. ; Divino, M. D. ; Austin, R. F. ; Feldman, R. D. ; Jones, K. L. ; Johnson, A. M.

    Woodbury, NY : American Institute of Physics (AIP)
    Published 1991
    Staff View
    ISSN:
    1077-3118
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    We demonstrate the first waveguide intensity modulator for visible wavelengths based on the quantum-confined Stark effect. The active waveguide core is composed of 58 Cd0.42Zn0.58Te/ZnTe quantum wells surrounded by Cd0.12Zn0.88Te cladding layers. We obtain (approximately-greater-than)10 dB modulation depth at 640 nm with 4 V bias in a 500-μm-long waveguide.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.106171

    Articles: DFG German National Licenses