Search Results - (Author, Cooperation:J. Zook)
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1Latest Papers from Table of Contents or Articles in PressL. O. Frishkoff ; D. S. Karp ; L. K. M'Gonigle ; C. D. Mendenhall ; J. Zook ; C. Kremen ; E. A. Hadly ; G. C. Daily
American Association for the Advancement of Science (AAAS)
Published 2014Staff ViewPublication Date: 2014-09-13Publisher: American Association for the Advancement of Science (AAAS)Print ISSN: 0036-8075Electronic ISSN: 1095-9203Topics: BiologyChemistry and PharmacologyComputer ScienceMedicineNatural Sciences in GeneralPhysicsKeywords: Agriculture/*trends ; Animals ; *Biodiversity ; Birds/*classification ; Conservation of Natural Resources ; Costa Rica ; *Extinction, Biological ; Phylogeny ; Species Specificity ; TreesPublished by: -
2Articles: DFG German National LicensesZvanut, M. E. ; Feigl, F. J. ; Fowler, W. B. ; Rudra, J. K. ; Caplan, P. J. ; Poindexter, E. H. ; Zook, J. D.
Woodbury, NY : American Institute of Physics (AIP)
Published 1989Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: An electron trapping instability in silicon dioxide films sputtered onto silicon substrates was analyzed by metal-oxide-semiconductor electrical methods and electron paramagnetic resonance (EPR), and was compared with an E' defect model from molecular orbital cluster calculations. This comparison indicates that an E' defect may well be responsible for the observed trapping instability, since electrically measured trap filling and emptying was quantitatively correlated with a reversible variation in the EPR signal magnitude. The specific model proposed for this defect is a "surface-like'' or hemi-E' center, O3≡Si−, which upon loss of an electron becomes O3≡Si+ and relaxes towards a planar configuration. The relaxation energy associated with the restoration of the original configuration is manifested as a hysteresis in the electrical trap filling and emptying cycle.Type of Medium: Electronic ResourceURL: -
3Articles: DFG German National LicensesZvanut, M. E. ; Feigl, F. J. ; Zook, J. D.
[S.l.] : American Institute of Physics (AIP)
Published 1988Staff ViewISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: We have studied electron trapping and detrapping resulting from bias stress applied to a metal-sputtered oxide-native oxide-semiconductor capacitor. The trapping process is described as band-to-trap tunneling. Based on the assumption of a trap with a delta function spatial distribution, a model was developed that predicts a trap energy distribution and defect relaxation energy. Application of this model to experimental data reveals a value for the relaxation energy of approximately 1 eV. We suggest that this model may apply to hysteretic instabilities observed in p-channel transistors and dual dielectric memory devices.Type of Medium: Electronic ResourceURL: -
4Articles: DFG German National LicensesGoldenberg, Barbara ; Zook, J. David ; Ulmer, Robert J.
Woodbury, NY : American Institute of Physics (AIP)
Published 1993Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: Both metal-insulator-semiconductor and p-n junction electroluminescence have been observed in thin-film, metalorganic chemical vapor deposition-grown GaN diodes thermally annealed in N2. UV radiation, peaking near 380 nm, is emitted when electrons are injected from the undoped, n-type material into the Mg-doped, p-type GaN. Violet light, peaking near 430 nm, is obtained by injecting electrons into p-type material from either n-type material or non-ohmic metal contacts. The present results support and extend earlier interpretations of the nature of the recombination centers in GaN.Type of Medium: Electronic ResourceURL: -
5Articles: DFG German National LicensesStaff View
ISSN: 0030-4018Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002Topics: PhysicsType of Medium: Electronic ResourceURL: