Search Results - (Author, Cooperation:J. Z. Tischler)
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1Latest Papers from Table of Contents or Articles in PressJ. D. Budai ; J. Hong ; M. E. Manley ; E. D. Specht ; C. W. Li ; J. Z. Tischler ; D. L. Abernathy ; A. H. Said ; B. M. Leu ; L. A. Boatner ; R. J. McQueeney ; O. Delaire
Nature Publishing Group (NPG)
Published 2014Staff ViewPublication Date: 2014-11-11Publisher: Nature Publishing Group (NPG)Print ISSN: 0028-0836Electronic ISSN: 1476-4687Topics: BiologyChemistry and PharmacologyMedicineNatural Sciences in GeneralPhysicsPublished by: -
2Articles: DFG German National LicensesStaff View
ISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: We have used a 57Co Mössbauer source to measure the resonant nuclear scattering properties of epitaxial 57Fe2O3 grown on natural Fe2O3 substrates. Isotopically enriched 57Fe2O3 layers were grown on 〈111〉 oriented Fe2O3 by chemical vapor transport; Mo Kα rocking curve measurements showed the mosaic spread of the epitaxial layers to be ∼15 arcs. The resonant nuclear scattering properties were characterized by absolute integrated intensity measurements of the (electronic and nuclear resonant) 666 reflection and the (pure nuclear resonant) 777 reflection as a function of energy near the resonance. The energy widths of the diffracted intensities were found to be ∼40 neV (∼10Γ) and the integrated intensities were found to lie between the values calculated from kinematic and dynamic diffraction theories. The results indicate that epitaxial crystals such as these can be used for resonant nuclear monochromators to obtain resonant x-ray beams from synchrotron sources.Type of Medium: Electronic ResourceURL: -
3Articles: DFG German National LicensesTischler, J. Z. ; Larson, B. C. ; Boatner, L. A. ; Alp, E. E. ; Mooney, T.
[S.l.] : American Institute of Physics (AIP)
Published 1996Staff ViewISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: Doppler absorption measurements have been used to investigate time-slice Mössbauer absorption spectroscopy for synchrotron radiation and a mosaic resonant Bragg monochromator. The energy widths for wide time intervals and the time-dependent narrowing of the spectral width of resonant Bragg scattering from a mosaic 57Fe2O3 crystal have been measured using a powdered 9.7 mg/cm2 57Fe2O3 absorber. The measurements are compared with calculations for a thick (9.7 mg/cm2) and a thin (0.5 mg/cm2) absorber, and the feasibility of high angular collimation neV range x-ray scattering spectroscopy using synchrotron radiation and time windowing is assessed. ©1996 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
4Articles: DFG German National LicensesEres, Djula ; Lowndes, Douglas H. ; Tischler, J. Z. ; Sharp, J. W. ; Geohegan, D. B. ; Pennycook, S. J.
Woodbury, NY : American Institute of Physics (AIP)
Published 1989Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: Pyrolysis of high-purity digermane (Ge2 H6 ) has been used to grow epitaxial Ge films of high crystalline quality on (100) GaAs substrates in a low-pressure environment. X-ray double-crystal diffractometry shows that fully commensurate, coherently strained epitaxial Ge films can be grown on (100) GaAs at digermane partial pressures of 0.05–40 mTorr for substrate temperatures of 380–600 °C. Amorphous films also were deposited. Information about the crystalline films surface morphology, growth mode, and microstructure was obtained from scanning electron microscopy, cross-section transmission electron microscopy, and in situ reflectivity measurements. The amorphous-to-crystalline transition temperature and the morphology of the crystalline films were both found to depend on deposition conditions (primarily the incidence rate of Ge-bearing species and the substrate temperature). Epitaxial growth rates using digermane were found to be about two orders of magnitude higher than rates using germane (GeH4 ) under similar experimental conditions.Type of Medium: Electronic ResourceURL: -
5Articles: DFG German National LicensesEres, Djula ; Lowndes, D. H. ; Tischler, J. Z.
Woodbury, NY : American Institute of Physics (AIP)
Published 1990Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsType of Medium: Electronic ResourceURL: -
6Articles: DFG German National LicensesTischler, J. Z. ; Larson, B. C. ; Mills, D. M.
Woodbury, NY : American Institute of Physics (AIP)
Published 1988Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: Nanosecond resolution time-resolved x-ray diffraction has been used to make the first measurements of the liquid-solid interface overheating and undercooling in germanium. The results show an orientation-dependent undercooling for growth on (111) and (001) faces. For both the (111) and (001) faces the velocity versus temperature interface response function has a slope of ∼5 K/(m/s), except for undercooling on the (111) face where the slope is 20 K/(m/s).Type of Medium: Electronic ResourceURL: -
7Articles: DFG German National LicensesYoon, Mirang ; Larson, B. C. ; Tischler, J. Z. ; Haynes, T. E.
Woodbury, NY : American Institute of Physics (AIP)
Published 1999Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: We have used submicron-resolution synchrotron x-ray beams to study the size, type, and depth distribution of ion-implantation-induced defect clusters in Si. A 0.65 μm resolution x-ray beam, generated using Fresnel zone plate focusing optics, was used to study (001)-oriented Si implanted at 300 °C with 10 MeV Si ions. Diffuse scattering measurements were made near the (220) Bragg reflection, as a function of depth on a (110) cross-sectioned sample, with a 0.65 μm depth resolution. The microbeam focusing optics and the depth-resolved scattering measurements are discussed, and an analysis of the intensity and lineshape of the diffuse scattering is presented in terms of existing models of vacancy and interstitial clusters in Si. © 1999 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
8Articles: DFG German National LicensesEres, G. ; Tischler, J. Z. ; Yoon, M. ; Larson, B. C. ; Rouleau, C. M. ; Lowndes, D. H.
Woodbury, NY : American Institute of Physics (AIP)
Published 2002Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: Homoepitaxy of SrTiO3 by pulsed-laser deposition has been studied using in situ time-resolved surface x-ray diffraction in the temperature range of 310 °C to 780 °C. Using a two-detector configuration, surface x-ray diffraction intensities were monitored simultaneously at the (0 0 〈fraction SHAPE="CASE"〉12) specular and the (0 1 〈fraction SHAPE="CASE"〉12) off-specular truncation rod positions. Abrupt intensity changes in both the specular and off-specular rods after laser pulses indicated prompt crystallization into SrTiO3 layers followed by slower intra- and interlayer surface rearrangements on time scales of seconds. Specular rod intensity oscillations indicated layer-by-layer growth, while off-specular rod intensity measurements suggested the presence of transient in-plane lattice distortions for depositions above 600 °C. © 2002 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
9Articles: DFG German National LicensesBuschert, J. R. ; Tischler, J. Z. ; Mills, D. M. ; Zhao, Q. ; Colella, R.
[S.l.] : American Institute of Physics (AIP)
Published 1989Staff ViewISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: The loss of crystallinity at the surface of a silicon single crystal exposed to intense pulsed laser irradiation has been observed by means of a grazing incidence diffraction technique. The Bragg peak is shown to disappear during melting, and gradually reappear during subsequent stages of recrystallization.Type of Medium: Electronic ResourceURL: -
10Articles: DFG German National LicensesEres, Djula ; Lowndes, D. H. ; Tischler, J. Z. ; Sharp, J. W. ; Haynes, T. E. ; Chisholm, M. F.
[S.l.] : American Institute of Physics (AIP)
Published 1990Staff ViewISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: The role of deposition rate in the growth of Ge films on GaAs (100) was investigated using a new supersonic free-jet growth technique capable of achieving epitaxial growth rates several orders of magnitude higher than were previously available. The high growth rates are due to two factors: (1) the high arrival rate of digermane source molecules at a heated GaAs surface, and (2) the high thermal decomposition rate of digermane. Dramatic improvements in surface smoothness were observed with increasing deposition rate, while keeping all other deposition parameters fixed. When the arrival rate of digermane molecules was too high, amorphous films were deposited, in agreement with kinetic considerations. The supersonic free-jet growth technique and the microstructural and electrical properties of the resulting Ge films are described.Type of Medium: Electronic ResourceURL: -
11Articles: DFG German National LicensesYang, Wenge ; Ice, G. E. ; Budai, J. D. ; Tischler, J. Z. ; Larson, B. C.
[s.l.] : Macmillian Magazines Ltd.
Published 2002Staff ViewISSN: 1476-4687Source: Nature Archives 1869 - 2009Topics: BiologyChemistry and PharmacologyMedicineNatural Sciences in GeneralPhysicsNotes: [Auszug] Advanced materials and processing techniques are based largely on the generation and control of non-homogeneous microstructures, such as precipitates and grain boundaries. X-ray tomography can provide three-dimensional density and chemical distributions of such structures with submicrometre ...Type of Medium: Electronic ResourceURL: