Search Results - (Author, Cooperation:J. Wan)
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1Uraji, M., Tamura, H., Mizohata, E., Arima, J., Wan, K., Ogawa, K., Inoue, T., Hatanaka, T.
The American Society for Microbiology (ASM)
Published 2018Staff ViewPublication Date: 2018-01-18Publisher: The American Society for Microbiology (ASM)Print ISSN: 0099-2240Electronic ISSN: 1098-5336Topics: BiologyPublished by: -
2M. P. Dizon, A. M. Yu, R. K. Singh, J. Wan, Mary-Margaret Chren, Carsten Flohr, J. Silverberg, D. J. Margolis, S. M Langan, K Abuabara
Wiley-Blackwell
Published 2018Staff ViewPublication Date: 2018-01-17Publisher: Wiley-BlackwellPrint ISSN: 0007-0963Electronic ISSN: 1365-2133Topics: MedicinePublished by: -
3J. Zhou ; J. Wan ; X. Gao ; X. Zhang ; S. R. Jaffrey ; S. B. Qian
Nature Publishing Group (NPG)
Published 2015Staff ViewPublication Date: 2015-10-13Publisher: Nature Publishing Group (NPG)Print ISSN: 0028-0836Electronic ISSN: 1476-4687Topics: BiologyChemistry and PharmacologyMedicineNatural Sciences in GeneralPhysicsKeywords: 5' Untranslated Regions/genetics ; Adenosine/*analogs & derivatives/metabolism ; Animals ; Cell Line ; Cell Nucleus/metabolism ; Fibroblasts/cytology/metabolism ; *Gene Expression Regulation ; HSP70 Heat-Shock Proteins/genetics ; *Heat-Shock Response/genetics ; *Methylation ; Mice ; Mixed Function Oxygenases/antagonists & inhibitors/metabolism ; Oxo-Acid-Lyases/antagonists & inhibitors/metabolism ; *Peptide Chain Initiation, Translational ; RNA Caps/metabolism ; RNA, Messenger/genetics/*metabolism ; RNA-Binding Proteins/metabolism ; Transcription, Genetic/geneticsPublished by: -
4F. Zhou ; Q. Lin ; L. Zhu ; Y. Ren ; K. Zhou ; N. Shabek ; F. Wu ; H. Mao ; W. Dong ; L. Gan ; W. Ma ; H. Gao ; J. Chen ; C. Yang ; D. Wang ; J. Tan ; X. Zhang ; X. Guo ; J. Wang ; L. Jiang ; X. Liu ; W. Chen ; J. Chu ; C. Yan ; K. Ueno ; S. Ito ; T. Asami ; Z. Cheng ; C. Lei ; H. Zhai ; C. Wu ; H. Wang ; N. Zheng ; J. Wan
Nature Publishing Group (NPG)
Published 2016Staff ViewPublication Date: 2016-01-14Publisher: Nature Publishing Group (NPG)Print ISSN: 0028-0836Electronic ISSN: 1476-4687Topics: BiologyChemistry and PharmacologyMedicineNatural Sciences in GeneralPhysicsPublished by: -
5Fan, W., Demers, A. J., Wan, Y., Li, Q.
The American Association of Immunologists (AAI)
Published 2018Staff ViewPublication Date: 2018-04-24Publisher: The American Association of Immunologists (AAI)Print ISSN: 0022-1767Electronic ISSN: 1550-6606Topics: MedicinePublished by: -
6Fan, J., Ray, P., Lu, Y., Kaur, G., Schwarz, J. J., Wan, L. Q.
American Association for the Advancement of Science (AAAS)
Published 2018Staff ViewPublication Date: 2018-10-25Publisher: American Association for the Advancement of Science (AAAS)Electronic ISSN: 2375-2548Topics: Natural Sciences in GeneralPublished by: -
7Y. Liang ; Y. Cao ; K. Tanaka ; S. Thibivilliers ; J. Wan ; J. Choi ; C. Kang ; J. Qiu ; G. Stacey
American Association for the Advancement of Science (AAAS)
Published 2013Staff ViewPublication Date: 2013-09-07Publisher: American Association for the Advancement of Science (AAAS)Print ISSN: 0036-8075Electronic ISSN: 1095-9203Topics: BiologyChemistry and PharmacologyComputer ScienceMedicineNatural Sciences in GeneralPhysicsKeywords: Arabidopsis/drug effects/*immunology/*microbiology ; Arabidopsis Proteins/metabolism ; Cell Membrane/metabolism ; Flagellin/immunology ; Immunity, Innate/drug effects/*immunology ; Lipopolysaccharides/*immunology/pharmacology ; Nitrogen Fixation/genetics ; Oligosaccharides/immunology/pharmacology ; Protein Kinases/metabolism ; Proteolysis ; Receptors, Pattern Recognition/metabolism ; Soybeans/immunology/microbiology ; SymbiosisPublished by: -
8F. Zhou ; Q. Lin ; L. Zhu ; Y. Ren ; K. Zhou ; N. Shabek ; F. Wu ; H. Mao ; W. Dong ; L. Gan ; W. Ma ; H. Gao ; J. Chen ; C. Yang ; D. Wang ; J. Tan ; X. Zhang ; X. Guo ; J. Wang ; L. Jiang ; X. Liu ; W. Chen ; J. Chu ; C. Yan ; K. Ueno ; S. Ito ; T. Asami ; Z. Cheng ; C. Lei ; H. Zhai ; C. Wu ; H. Wang ; N. Zheng ; J. Wan
Nature Publishing Group (NPG)
Published 2013Staff ViewPublication Date: 2013-12-18Publisher: Nature Publishing Group (NPG)Print ISSN: 0028-0836Electronic ISSN: 1476-4687Topics: BiologyChemistry and PharmacologyMedicineNatural Sciences in GeneralPhysicsKeywords: Amino Acid Sequence ; Cloning, Molecular ; Gene Expression Regulation, Plant ; Lactones/*metabolism ; Molecular Sequence Data ; Mutation/genetics ; Oryza/genetics/*metabolism ; Phenotype ; Plant Growth Regulators/*metabolism ; Plant Proteins/genetics/*metabolism ; Proteasome Endopeptidase Complex/metabolism ; Protein Binding ; *Proteolysis ; SKP Cullin F-Box Protein Ligases/*metabolism ; *Signal TransductionPublished by: -
9Liu, J., Lu, J.-J., Zhou, K., Wan, J., Li, Y., Cui, X.-Y., Gao, Q., Huang, Y.-C., Li, S.-N., Dong, Q.-Z., Lin, Q.
BMJ Publishing
Published 2018Staff ViewPublication Date: 2018-06-20Publisher: BMJ PublishingElectronic ISSN: 2044-6055Topics: MedicineKeywords: Open access, Complementary medicinePublished by: -
10Yu, X., Zhao, Z., Zheng, X., Zhou, J., Kong, W., Wang, P., Bai, W., Zheng, H., Zhang, H., Li, J., Liu, J., Wang, Q., Zhang, L., Liu, K., Yu, Y., Guo, X., Wang, J., Lin, Q., Wu, F., Ren, Y., Zhu, S., Zhang, X., Cheng, Z., Lei, C., Liu, S., Liu, X., Tian, Y., Jiang, L., Ge, S., Wu, C., Tao, D., Wang, H., Wan, J.
American Association for the Advancement of Science (AAAS)
Published 2018Staff ViewPublication Date: 2018-06-08Publisher: American Association for the Advancement of Science (AAAS)Print ISSN: 0036-8075Electronic ISSN: 1095-9203Topics: BiologyChemistry and PharmacologyGeosciencesComputer ScienceMedicineNatural Sciences in GeneralPhysicsKeywords: Botany, GeneticsPublished by: -
11Staff View
Publication Date: 2018-04-18Publisher: BMJ PublishingElectronic ISSN: 2044-6055Topics: MedicineKeywords: Open access, Qualitative researchPublished by: -
12Staff View
Publication Date: 2018-07-12Publisher: Royal SocietyElectronic ISSN: 2054-5703Topics: Natural Sciences in GeneralKeywords: mechanical engineering, medical physicsPublished by: -
13Sehdev, A., Gbolahan, O., Hancock, B. A., Stanley, M., Shahda, S., Wan, J., Wu, H. H., Radovich, M., ONeil, B. H.
The American Association for Cancer Research (AACR)
Published 2018Staff ViewPublication Date: 2018-12-15Publisher: The American Association for Cancer Research (AACR)Print ISSN: 1078-0432Electronic ISSN: 1557-3265Topics: MedicinePublished by: -
14Zhao, Y.-G. ; Brebner, J. L. ; Masut, R. A. ; Zhao, G. ; Bensaada, A. ; Wan, J. Z.
[S.l.] : American Institute of Physics (AIP)
Published 1993Staff ViewISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: The defect energy levels in metalorganic chemical vapor deposition (MOCVD) grown GaxIn1−xP/InP:Fe and GaxIn1−xP/InP:S epilayers (x≤0.24) have been studied by photoluminescence (PL) and photoconductivity (PC) measurements. To understand the origin of the observed deep levels, we have determined the temperature dependence of the intensity and half-width of the dominant deep-level PL peaks. We find that (1) the dominant deep-level peaks of the samples grown on the same substrate are related to the epilayer composition, and move to higher energies with increasing gallium content; (2) the dominant deep-level peaks of the samples with the same epilayer composition grown on different substrates are different. They are attributed to the impurity in the substrate diffusing into the epilayer during MOCVD growth, forming an impurity-vacancy complex. The following tentative assignments are proposed: the dominant deep-level peaks in GaxIn1−xP/InP:Fe and GaxIn1−xP/InP:S are attributed to the emission of a (V)P-(Fe)III complex and a (V)III-(S)P complex, respectively. Comparing the deep level with the near-band-edge emission we show that (1) all deep levels are independent of the band edge as x is varied; (2) the composition dependences of the deep levels associated with such complexes depend on the site occupied by the impurity atom.Type of Medium: Electronic ResourceURL: -
15Erber, T. ; McGreer, K. A. ; Nowak, E. R. ; Wan, J-C. ; Weinstock, H.
[S.l.] : American Institute of Physics (AIP)
Published 1990Staff ViewISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: The feasibility of adapting scanning tunneling microscope (STM) technology to investigate the transition from reversible to irreversible behavior in mechanical systems is demonstrated. Using an STM with a graphite sample, both regimes of reversible and irreversible response to electrostrictive cycling are observed.Type of Medium: Electronic ResourceURL: -
16Wan, J. ; Luo, Y. H. ; Choi, Sung D. ; Li, R. G. ; Jin, G. ; Liu, J. L. ; Wang, K. L.
[S.l.] : American Institute of Physics (AIP)
Published 2001Staff ViewISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: Multiwall carbon nanotubes have been grown by gas source molecular beam epitaxy in the presence of Ni catalyst. Some nanotubes show thinner bases compared with their heads. First- and second-order Raman scattering spectra are used to study the structure of samples with different initial thicknesses of Ni layers. The second-order 2D Raman mode of carbon nanotubes shows a downshift compared with the graphite-like structure. The growth of carbon nanotubes is found to depend on the size of the metal droplets. When the initial Ni layer is either too thick or too thin, few carbon nanotubes are observed. The Raman spectra show graphite and glassy carbon structures for too thick and too thin initial Ni layer films, respectively. Only when a proper range of Ni catalyst film is used, carbon nanotubes could be found. © 2001 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
17Wan, J. ; Luo, Y. H. ; Jiang, Z. M. ; Jin, G. ; Liu, J. L. ; Wang, Kang L.
[S.l.] : American Institute of Physics (AIP)
Published 2001Staff ViewISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: The Ge/Si interdiffusion in GeSi dots grown on Si (001) substrate by gas-source molecular beam epitaxy is investigated. Transmission electron microscopy images show that, after annealing, the aspect ratio of the height to base diameter increases. Raman spectra show that the Si–Ge mode redshifts and the intensity of the local Si–Si mode increases with the increase of annealing temperature, which suggests the Ge/Si interdiffusion during annealing. The photoluminescence peaks from the dots and the wetting layers show blueshift due to the atomic intermixing during annealing. The interdiffusion thermal activation energies of GeSi dots and the wetting layers are 2.16 and 2.28 eV, respectively. The interdiffusion coefficient of the dots is about 40 times higher than that of wetting layers and the reasons were discussed. © 2001 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
18Luo, Y. H. ; Wan, J. ; Forrest, R. L. ; Liu, J. L. ; Goorsky, M. S. ; Wang, K. L.
[S.l.] : American Institute of Physics (AIP)
Published 2001Staff ViewISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: High-quality strain-relaxed SiGe templates with a low threading dislocation density and smooth surface are critical for device performance. In this work, SiGe films on low temperature Si buffer layers were grown by solid-source molecular beam epitaxy and characterized by atomic force microscope, double-axis x-ray diffraction, photoluminescence spectroscopy, and Raman spectroscopy. Effects of the growth temperature and the thickness of the low temperature Si buffer were studied. It was demonstrated that when using proper growth conditions for the low temperature Si buffer the Si buffer became tensily strained and gave rise to the compliant effect. The lattice mismatch between the SiGe and the Si buffer layer was reduced. A 500 nm Si0.7Ge0.3 film with a low threading dislocation density as well as smooth surface was obtained by this method. © 2001 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
19Wan, J. Z. ; Simmons, J. G. ; Thompson, D. A.
[S.l.] : American Institute of Physics (AIP)
Published 1997Staff ViewISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: Band gap modification in Ne+-ion implanted In1−xGaxAs/InP (x=0.25, 0.33, 0.40, 0.47, 0.54, 0.61, 0.69) and InAsyP1−y/InP (y=0.32) quantum well structures has been studied by low temperature (12 K) photoluminescence spectra. The maximum usable high temperature anneal for inducing the compositional intermixing using an InP proximity cap is found to be ∼700 °C for 13 s. A second low-temperature (300 °C) anneal, following the high-temperature (700 °C) anneal, is found to induce greater band gap changes than the simple one-step anneal at 700 °C. The changes are found to be approximately proportional to the difference of bandgap energy between the well and the barrier materials; the proportionality coefficient increases with ion dose and reaches a maximum at a dose of ∼2×1013 cm−2. At higher doses, the proportionality coefficient decreases. The band gap changes are explained qualitatively based on the InGaAsP binary composition diagram. © 1997 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
20Staff View
ISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: We have modified the properties of diamondlike atomic-scale composite (DLASC) material of various thicknesses (5–70 μm) by means of cw Ar-ion laser annealing using a focused beam (∼2 μm spot size). These DLASC films [amorphous "diamondlike/quartzlike" a-(C:H/Si:O)] constitute a novel class of diamond-related materials. The laser annealing effects were investigated by micro-Raman scattering. The structure of these films can be altered locally from amorphous to nanocrystalline depending not only on the parameters of the annealing process (annealing time, laser intensity) but also the mechanical properties (hardness, stress) of the films. For comparison purposes we also measured the effects of thermal annealing. © 1997 American Institute of Physics.Type of Medium: Electronic ResourceURL: