Search Results - (Author, Cooperation:J. Seo)

2015-01-07

Nature Publishing Group (NPG)

0028-0836

1476-4687

Biology

Chemistry and Pharmacology

Medicine

Natural Sciences in General

Physics

2018-04-28

The American Society for Microbiology (ASM)

0022-538X

1098-5514

Medicine

2014-10-04

American Association for the Advancement of Science (AAAS)

0036-8075

1095-9203

Biology

Chemistry and Pharmacology

Computer Science

Medicine

Natural Sciences in General

Physics

2015-05-23

American Association for the Advancement of Science (AAAS)

0036-8075

1095-9203

Biology

Chemistry and Pharmacology

Computer Science

Medicine

Natural Sciences in General

Physics

2012-03-06

Nature Publishing Group (NPG)

0028-0836

1476-4687

Biology

Chemistry and Pharmacology

Medicine

Natural Sciences in General

Physics

Acetylation/drug effects ; Alzheimer Disease/complications/genetics/physiopathology ; Amyloid beta-Peptides/toxicity ; Animals ; Brain/drug effects/metabolism/*physiopathology ; Disease Models, Animal ; *Epigenesis, Genetic/drug effects ; Gene Expression Regulation/drug effects ; Gene Knockdown Techniques ; Hippocampus/drug effects/metabolism ; Histone Deacetylase 2/deficiency/*genetics/metabolism ; Histones/metabolism ; Humans ; Hydrogen Peroxide/toxicity ; Memory Disorders/complications/*genetics/*physiopathology ; Mice ; Neurodegenerative Diseases/complications/*genetics/*physiopathology ; Neuronal Plasticity/drug effects/genetics ; Peptide Fragments/toxicity ; Phosphorylation/drug effects ; Promoter Regions, Genetic/drug effects/genetics ; RNA Polymerase II/metabolism ; Receptors, Glucocorticoid/metabolism

1365-2222

Blackwell Publishing Journal Backfiles 1879-2005

Medicine

Background There have been many studies concerning pathological changes in bronchial mucosa from asthmatics; however, few studies has been carried out to evaluate pathological changes according to the severity of asthma.Objective This study was designed to evaluate the cellular components in bronchoalveolar lavage fluid (BALF) and histologicai abnormalities in asthmatics according to the severity ot asthma.Methods Bronchoalveolar lavages, bronchoscopic biopsies and ultrastructural examinations were performed in 13 asthmatics and 11 (BAL) or four (biopsies) non-asthmatic controls. The proportions of epithelial cells and eosinophils in BALF were significantly increased in asthmatics and showed significant correlations with PC20Meth which reflects bronchial hyperresponsiveness. Light microscopic examination revealed loss of epithelium, inllammatory cell infiltrations and thickening of the basement membrane which also showed significant correlation with PC20Meth. Hypertrophy of airway smooth muscles and hyperplasia of mucous glands were prominent in asthmatics but there was no difference according to the severity of asthma. Ultra-structural examination revealed that basement membrane thickening on light microscopic examination is due to the increased subepithelial collagen deposition with normal thickeness of basal lamina.Conclusion These data suggest that loss of epithelial cells, infiltration of inflammatory cells, especially eosinophils, and increased deposition of subepithelial collagen play major roles in determining the severity of asthma and non-specific bronchial hyperresponsiveness.

Electronic Resource

2018-04-14

The American Society for Microbiology (ASM)

0022-538X

1098-5514

Medicine

2018-08-02

The Company of Biologists

0950-1991

1477-9129

Biology

2018-10-16

The American Association for Cancer Research (AACR)

1078-0432

1557-3265

Medicine

1089-7550

AIP Digital Archive

Physics

GaAs oxide films were formed by x-ray illumination of condensed O2 on GaAs(110) at 20 K, and their stability was investigated during subsequent Cr overlayer formation with atoms at 20 and 300 K and with preformed clusters. High resolution synchrotron radiation photoemission results for overlayer formation at 300 K show that Cr atoms reduce the GaAs oxides to form Cr oxides, Cr—As, and Cr—Ga bonding configurations. These reactions first involve the As2O5-like species and then progress to the As2O3-like and Ga2O3-like oxides, reflecting the relative stability of the oxides and their spatial distributions. For overlayer formation at 20 K, the Cr atoms initially reduced the As-oxide surface layers but had little effect on the Ga oxides, and a nonuniform metallic overlayer was formed after 1.5 A(ring) Cr deposition. These low-temperature results demonstrate that kinetic constraints imposed at 20-K limit Cr diffusion and, hence, oxide reduction. In contrast, the deposition of Cr clusters onto oxidized GaAs produced a metallic layer with minimal oxide disruption. This different final state can be understood by noting that the bonding of Cr atoms in metallic Cr clusters establishes an activation barrier for reaction that is not present for atom deposition.

Electronic Resource

1089-7690

AIP Digital Archive

Physics

Chemistry and Pharmacology

Irradiation with 1.7 and 1.97 eV photons of O2 physisorbed on GaAs(110) at 25 K induced strong surface oxidation. The oxidation rate was dependent on photon energy as well as substrate doping type. The 1.97 eV photons induced reaction ∼30 times faster than did the 1.7 eV photons. For fixed photon energy, reaction on p-type substrates was ∼6 times faster than on n-type substrates. These results stand in contrast from those of room temperature experiments where reaction rate was independent of doping type and the dependence on photon energy reflected only the substrate photon absorption coefficient. We show that photoexcited hot electrons are responsible for photo-induced reactions at low temperature. Coupling between hot electrons and physisorbed O2 is via resonant tunneling involving the O2 electron affinity level.

Electronic Resource

1089-7550

AIP Digital Archive

Physics

We communicate a detailed study of the epitaxial growth of CeO2 on MgO. The key feature of the growth is the dependence of the in-plane orientation of the CeO2 epitaxial layer on the MgO surface morphology. Atomic force microscopic (AFM) measurements, x-ray analyses, as well as high-resolution transmission electron microscopy (HRTEM) investigations reveal that on rough substrates a cube-on-cube growth of CeO2 on MgO occurs while on smooth substrates the CeO2 unit cell is rotated around the surface normal by 45° with respect to the MgO unit cell when the deposition rate is low (∼0.3 A(ring)/s) during the first stages of growth. This growth mechanism can be used for a defined fabrication of 45° grain boundaries in the CeO2 layer by controlling the surface roughness of the MgO substrate. This report demonstrates that these 45° grain boundaries may be used to fabricate YBa2Cu3O7−x Josephson junctions. © 1995 American Institute of Physics.

Electronic Resource

1077-3118

AIP Digital Archive

Physics

High-resolution synchrotron radiation photoemission results for O2 physisorbed on GaAs (110) show Ga-O and As-O formation that is a direct result of photon-induced reaction at 20 K. Spatially resolved studies show that the thickness and chemical composition of the semiconductor oxides vary in proporition to total beam irradiation. The extent of reaction can be controlled by varying the amount of oxygen present on the surface, and As5+-like bonding configurations can be formed. These results can only be understood when competition between thermodynamic, kinetic, photon- and electron-mediated processes are considered.

Electronic Resource

1077-3118

AIP Digital Archive

Physics

Time resolved photoluminescence (PL) characteristics of a SiN cap disordered GaAs/AlGaAs multiple quantum well (MQW) structure exhibit a decrease in carrier lifetime in conjunction with an increase in quantum well disordering (QWD) as the SiN capping layer thickness is increased. The decrease in carrier lifetime is attributed to enhanced carrier trapping due to the defects introduced during dielectric cap quantum well disordering and the relaxation of the momentum conservation during radiative recombination by QWD. Potential applications of these effects on high speed optical devices such as laser diodes (LD's) and optical modulators are discussed. © 1995 American Institute of Physics.

Electronic Resource

1077-3118

AIP Digital Archive

Physics

Growth of gallium oxide on n-GaN was realized in H2O by bias-assisted photoelectrochemical (PEC) oxidation using Al as a counterelectrode instead of a Pt commonly used in the PEC process. Although the growth of the oxide was not observed at below 2 V, the initial oxide growth rate of 8.7 nm/min was shown at a bias of 15 V and ultraviolet light intensity of 300 mW/cm2. However, the growth rate lowered and oxide thickness was saturated to 340 nm. The saturated oxide thickness and initial growth rate were increased with the applied bias. The homogeneous oxide growth and near stoichiometric composition of Ga2O3 were observed in Auger electron spectroscopy analysis results. © 2002 American Institute of Physics.

Electronic Resource

1749-6632

Blackwell Publishing Journal Backfiles 1879-2005

Natural Sciences in General

Electronic Resource

1439-0264

Blackwell Publishing Journal Backfiles 1879-2005

Medicine

In the present study, we performed the retrograde tracing method using the neurotropic pseudorabies virus bartha strain (PRV-Ba) and immunohistochemistry against CGRP, to identify whether CGRP exists in the gastric monosynaptic vagal circuit between dorsal motor nucleus of vagus nerve (DMV) and nucleus tractus solitarius (NTS).At the results, PRV immunoreactive neurons were found in both DMV and NTS. However, CGRP-immunoreactive cells were present only in NTS, which contained no double-labeled neurons for PRV and CGRP.These results suggest that CGRP may not have a neuronal function in gastric vagal circuit of rat.

Electronic Resource

1439-0264

Blackwell Publishing Journal Backfiles 1879-2005

Medicine

We employed the retrograde neural tracing method using the pseudorabies virus bartha strain (PRV-Ba) to investigate the projection from accessory trigeminal nucleus (Acc5) or accessary facial nucleus (Acc7) to hypoglossal nucleus (HP). After injection of PRV-Ba into the bellies of the digastric muscle, the PRV-Ba containing neurones were observed in Acc5 of the cranial belly injected rats and Acc7 of caudal belly injected rats ipsilaterally, but not in HP. These results suggest that Acc5 and Acc7 may not project to HP and that movements of the digastric muscle are not related to cooperation with tongue movements during mastication.

Electronic Resource

1439-0264

Blackwell Publishing Journal Backfiles 1879-2005

Medicine

Pericellular arborization is reported to be the self-regulating structure in sensory ganglia. Although the calcitonin gene-related peptide (CGRP) or substance P (SP) immunoreactive pericellular arborization appeared in the sensory ganglia, there was no available information that CGRP and SP colocalize in this structure. As the attempts to resolve the question described above, the present study was undertaken to identify the coexistence of CGRP and SP in pericellular arborizations of the goat nodose and trigeminal ganglia by double immunohistochemistry. As the results show, CGRP immunoreactivity was present in every pericellular arborization containing SP immunoreactivity in trigeminal ganglia, however, pericellular network containing CGRP or SP immunoreactivity was not present in nodose ganglia. Unexpectedly, a few small satellite elements were observed to contain intense CGRP and SP immunoreactivity at the periphery of CGRP and SP immunoreactive neurones in nodose ganglia. Therefore, these results suggest that CGRP and SP coexsit in pericellular arborizations, and that satellite cell as well as pericellular arborization may be involved in intraganglionic regulation of goat sensory ganglia.

Electronic Resource

1476-4687

Nature Archives 1869 - 2009

Biology

Chemistry and Pharmacology

Medicine

Natural Sciences in General

Physics

[Auszug] The arrangement of spins at interfaces in a layered magnetic material often has an important effect on the properties of the material. One example of this is the directional coupling between the spins in an antiferromagnet and those in an adjacent ferromagnet, an effect first discovered ...

Electronic Resource