Search Results - (Author, Cooperation:J. Schmitz)
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1Latest Papers from Table of Contents or Articles in PressStaff View
Publication Date: 2018-06-10Publisher: MDPI PublishingElectronic ISSN: 1099-4300Topics: Chemistry and PharmacologyPhysicsPublished by: -
2Latest Papers from Table of Contents or Articles in PressH. Qiao ; Z. Shen ; S. S. Huang ; R. J. Schmitz ; M. A. Urich ; S. P. Briggs ; J. R. Ecker
American Association for the Advancement of Science (AAAS)
Published 2012Staff ViewPublication Date: 2012-09-01Publisher: American Association for the Advancement of Science (AAAS)Print ISSN: 0036-8075Electronic ISSN: 1095-9203Topics: BiologyChemistry and PharmacologyComputer ScienceMedicineNatural Sciences in GeneralPhysicsKeywords: Active Transport, Cell Nucleus ; Arabidopsis/drug effects/*metabolism ; Arabidopsis Proteins/genetics/*metabolism ; Cell Nucleus/*metabolism ; Endoplasmic Reticulum/*metabolism ; Ethylenes/*metabolism/pharmacology ; Gases/metabolism/pharmacology ; Mutation ; Nuclear Localization Signals/genetics/metabolism ; Phosphorylation ; Protein Kinases/metabolism ; Proteolysis ; Receptors, Cell Surface/genetics/*metabolismPublished by: -
3Latest Papers from Table of Contents or Articles in PressD. Hawlena ; M. S. Strickland ; M. A. Bradford ; O. J. Schmitz
American Association for the Advancement of Science (AAAS)
Published 2012Staff ViewPublication Date: 2012-06-16Publisher: American Association for the Advancement of Science (AAAS)Print ISSN: 0036-8075Electronic ISSN: 1095-9203Topics: BiologyChemistry and PharmacologyComputer ScienceMedicineNatural Sciences in GeneralPhysicsKeywords: Animals ; Bacteria/metabolism ; Biomass ; Carbon/analysis/metabolism ; Ecosystem ; Energy Metabolism ; Fear ; *Food Chain ; Grasshoppers/chemistry/*physiology ; Herbivory/physiology ; Insect Proteins/analysis/metabolism ; Nitrogen/analysis/metabolism ; *Plants ; *Predatory Behavior ; Soil/chemistry ; *Soil Microbiology ; Spiders/*physiology ; *Stress, PhysiologicalPublished by: -
4Latest Papers from Table of Contents or Articles in PressRoger Volden, Theron Palmer, Ashley Byrne, Charles Cole, Robert J. Schmitz, Richard E. Green, Christopher Vollmers
National Academy of Sciences
Published 2018Staff ViewPublication Date: 2018-09-26Publisher: National Academy of SciencesPrint ISSN: 0027-8424Electronic ISSN: 1091-6490Topics: BiologyMedicineNatural Sciences in GeneralPublished by: -
5Latest Papers from Table of Contents or Articles in PressDavid Punihaole, Riley J. Workman, Shiv Upadhyay, Craig Van Bruggen, Andrew J. Schmitz, Theresa M. Reineke, Renee R. Frontiera
American Chemical Society (ACS)
Published 2018Staff ViewPublication Date: 2018-10-18Publisher: American Chemical Society (ACS)Electronic ISSN: 1520-5207Topics: Chemistry and PharmacologyPhysicsPublished by: -
6Latest Papers from Table of Contents or Articles in PressR. E. Green ; E. L. Braun ; J. Armstrong ; D. Earl ; N. Nguyen ; G. Hickey ; M. W. Vandewege ; J. A. St John ; S. Capella-Gutierrez ; T. A. Castoe ; C. Kern ; M. K. Fujita ; J. C. Opazo ; J. Jurka ; K. K. Kojima ; J. Caballero ; R. M. Hubley ; A. F. Smit ; R. N. Platt ; C. A. Lavoie ; M. P. Ramakodi ; J. W. Finger, Jr. ; A. Suh ; S. R. Isberg ; L. Miles ; A. Y. Chong ; W. Jaratlerdsiri ; J. Gongora ; C. Moran ; A. Iriarte ; J. McCormack ; S. C. Burgess ; S. V. Edwards ; E. Lyons ; C. Williams ; M. Breen ; J. T. Howard ; C. R. Gresham ; D. G. Peterson ; J. Schmitz ; D. D. Pollock ; D. Haussler ; E. W. Triplett ; G. Zhang ; N. Irie ; E. D. Jarvis ; C. A. Brochu ; C. J. Schmidt ; F. M. McCarthy ; B. C. Faircloth ; F. G. Hoffmann ; T. C. Glenn ; T. Gabaldon ; B. Paten ; D. A. Ray
American Association for the Advancement of Science (AAAS)
Published 2014Staff ViewPublication Date: 2014-12-17Publisher: American Association for the Advancement of Science (AAAS)Print ISSN: 0036-8075Electronic ISSN: 1095-9203Topics: BiologyChemistry and PharmacologyComputer ScienceMedicineNatural Sciences in GeneralPhysicsKeywords: Alligators and Crocodiles/classification/*genetics ; Animals ; Biological Evolution ; Birds/classification/*genetics ; Conserved Sequence ; DNA Transposable Elements ; Dinosaurs/classification/*genetics ; *Evolution, Molecular ; Genetic Variation ; *Genome ; Molecular Sequence Annotation ; Molecular Sequence Data ; Phylogeny ; Reptiles/classification/genetics ; Sequence Alignment ; Sequence Analysis, DNA ; TranscriptomePublished by: -
7Latest Papers from Table of Contents or Articles in PressW. J. Ripple ; J. A. Estes ; R. L. Beschta ; C. C. Wilmers ; E. G. Ritchie ; M. Hebblewhite ; J. Berger ; B. Elmhagen ; M. Letnic ; M. P. Nelson ; O. J. Schmitz ; D. W. Smith ; A. D. Wallach ; A. J. Wirsing
American Association for the Advancement of Science (AAAS)
Published 2014Staff ViewPublication Date: 2014-01-11Publisher: American Association for the Advancement of Science (AAAS)Print ISSN: 0036-8075Electronic ISSN: 1095-9203Topics: BiologyChemistry and PharmacologyComputer ScienceMedicineNatural Sciences in GeneralPhysicsKeywords: Animals ; *Carnivora/anatomy & histology/classification/physiology ; *Ecological and Environmental Phenomena ; *Ecosystem ; *Extinction, Biological ; Humans ; Meat Products/statistics & numerical data ; Oceans and Seas ; Plants ; Population DynamicsPublished by: -
8Latest Papers from Table of Contents or Articles in PressStaff View
Publication Date: 2014-03-08Publisher: American Association for the Advancement of Science (AAAS)Print ISSN: 0036-8075Electronic ISSN: 1095-9203Topics: BiologyChemistry and PharmacologyComputer ScienceMedicineNatural Sciences in GeneralPhysicsKeywords: Arabidopsis/*genetics ; DNA Methylation/*genetics ; *Epigenesis, Genetic ; *Gene Expression Regulation, Plant ; *Quantitative Trait LociPublished by: -
9Latest Papers from Table of Contents or Articles in PressR. J. Schmitz ; M. D. Schultz ; M. G. Lewsey ; R. C. O'Malley ; M. A. Urich ; O. Libiger ; N. J. Schork ; J. R. Ecker
American Association for the Advancement of Science (AAAS)
Published 2011Staff ViewPublication Date: 2011-09-17Publisher: American Association for the Advancement of Science (AAAS)Print ISSN: 0036-8075Electronic ISSN: 1095-9203Topics: BiologyChemistry and PharmacologyComputer ScienceMedicineNatural Sciences in GeneralPhysicsKeywords: Alleles ; Arabidopsis/*genetics/metabolism ; *DNA Methylation ; DNA Transposable Elements ; DNA, Intergenic ; DNA, Plant/genetics/metabolism ; Dinucleoside Phosphates/metabolism ; *Epigenesis, Genetic ; Genes, Plant ; Genetic Variation ; Genome, Plant ; Linear Models ; Mutation ; Polymorphism, Genetic ; Promoter Regions, Genetic ; Transcription, GeneticPublished by: -
10Latest Papers from Table of Contents or Articles in PressR. J. Schmitz ; M. D. Schultz ; M. A. Urich ; J. R. Nery ; M. Pelizzola ; O. Libiger ; A. Alix ; R. B. McCosh ; H. Chen ; N. J. Schork ; J. R. Ecker
Nature Publishing Group (NPG)
Published 2013Staff ViewPublication Date: 2013-03-08Publisher: Nature Publishing Group (NPG)Print ISSN: 0028-0836Electronic ISSN: 1476-4687Topics: BiologyChemistry and PharmacologyMedicineNatural Sciences in GeneralPhysicsKeywords: Arabidopsis/*genetics ; DNA Methylation/genetics ; DNA Transposable Elements/genetics ; Epigenesis, Genetic/*genetics ; Epigenomics ; Genetic Variation/*genetics ; Genome, Plant/*genetics ; Linkage Disequilibrium/genetics ; Pollen/genetics ; Polymorphism, Genetic/genetics ; Quantitative Trait Loci ; RNA, Messenger/analysis/genetics ; RNA, Plant/genetics ; Seeds/geneticsPublished by: -
11Articles: DFG German National LicensesStaff View
ISSN: 0040-4039Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002Topics: Chemistry and PharmacologyType of Medium: Electronic ResourceURL: -
12FIS Bildung LiteraturdatenbankStaff View
Type of Medium: articlePublication Date: 1983Keywords: Empirische Untersuchung ; Sachinformation ; Physik ; ErwachsenerIn: Physica didactica, Bd. 10 (1983) H. 2, S. 89-96. Bibl, 0172-83930340-2134Language: German -
13FIS Bildung LiteraturdatenbankStaff View
Type of Medium: articlePublication Date: 1984Keywords: Schule ; Behinderter ; Geistig behinderter Mensch ; Nicht BehinderterIn: Behinderten-Zeitschrift, Bd. 21 (1984) H. 6, S. 36-37, 0175-5854Language: German -
14Articles: DFG German National LicensesGadaleta, C. ; Scamarcio, G. ; Fuchs, F. ; Schmitz, J.
[S.l.] : American Institute of Physics (AIP)
Published 1995Staff ViewISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: We have investigated the far-infrared reflectivity spectra of two series of InAs/GaSb superlattices grown with GaAs- or InSb-like interfaces. Significant differences in the spectra induced by the interface bond type can be observed. The theoretical simulation of the experimental data allowed us to accurately determine the energy of the interface TO phonons and the actual thickness of the region in which they are localized. The inactivity of the InAs TO phonon vibration at the interface can be explained by modeling a nonhomogeneous strain accommodation across the heterointerfaces. © 1995 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
15Articles: DFG German National LicensesFuchs, F. ; Weimer, U. ; Pletschen, W. ; Schmitz, J. ; Ahlswede, E. ; Walther, M. ; Wagner, J. ; Koidl, P.
Woodbury, NY : American Institute of Physics (AIP)
Published 1997Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: The optical and electrical properties of infrared photodiodes diodes based on InAs/(GaIn)Sb superlattices grown by molecular beam epitaxy were investigated. The diodes, with a cut-off wavelength around 8 μm show a current responsivity of 2 A/W. By proper adjustment of the p-doping level above the n-background concentration the depletion width exceeds a critical size of about 60 nm, leading to the suppression of band-to-band tunneling currents. Above that critical width the dynamic impedance R0A at 77 K reaches values above 1 kΩ cm2 leading to a Johnson-noise-limited detectivity in excess of 1×1012 cm(square root of)Hz/W. © 1997 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
16Articles: DFG German National LicensesWagner, J. ; Schmitz, J. ; Herres, N. ; Fuchs, F. ; Walther, M.
[S.l.] : American Institute of Physics (AIP)
Published 1998Staff ViewISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: The pseudodielectric function of InAs/Ga1−xInxSb superlattices (SLs) grown by solid-source molecular-beam epitaxy, was measured by spectroscopic ellipsometry (SE) for photon energies ranging from 1.2 to 5 eV. The width of the extrema in the SL pseudodielectric function derived from the E1 and E1+Δ1 interband transitions of the SL constituents InAs and Ga1−xInxSb, was found to depend on the structural quality of the SL. Differences in the SL quality caused by different sequences of InSb- like and GaAs-like interfaces, were easily detected by SE. The formation of the intended interface alternations was verified by Raman spectroscopy. The extrema in the SL pseudodielectric function originating from the E1 and E1+Δ1 interband transitions of Ga1−xInxSb were found to shift to lower energies with increasing In content x. Finally SE has been applied to the analysis of a complete InAs/Ga1−xInxSb SL detector structure. © 1998 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
17Articles: DFG German National LicensesWagner, J. ; Schmitz, J. ; Ralston, J. D. ; Koidl, P.
Woodbury, NY : American Institute of Physics (AIP)
Published 1994Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: Resonant Raman scattering has been used to study GaSb-capped AlSb/InAs/AlSb quantum wells, grown by molecular-beam epitaxy with a shutter sequence intended to promote the formation of an InSb-like InAs/AlSb heterointerface. For optical excitation in resonance with the E1 band gap of InAs, scattering by one-longitudinal-optical (LO) phonon and by two-LO phonons from the quantum well layer is strongly enhanced. Excitation close to the E1/E1+Δ1 gap resonance of GaSb, in contrast, enhances the one-LO scattering from the GaSb cap over that from the InAs quantum well. Thus resonance effects in LO phonon Raman scattering allow us to distinguish between scattering from these two materials despite the near-coincidence of the corresponding LO phonon frequencies. Scattering by an InSb-like mode is found to resonate at approximately the InAs E1/E1+Δ1 gap energy, supporting its assignment to an interface mode.Type of Medium: Electronic ResourceURL: -
18Articles: DFG German National LicensesBehr, D. ; Wagner, J. ; Schmitz, J. ; Herres, N. ; Ralston, J. D. ; Koidl, P. ; Ramsteiner, M. ; Schrottke, L. ; Jungk, G.
Woodbury, NY : American Institute of Physics (AIP)
Published 1994Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: We have used Raman spectroscopy and spectral ellipsometry to investigate InAs/GaSb short-period superlattices (SLs), grown by molecular-beam epitaxy, with either InSb- or GaAs-like interfaces. Room-temperature ellipsometric measurements show spectral features in the dielectric function due to the E1 and E1+Δ1 interband transitions of GaSb and InAs. For SLs with small InAs layer thicknesses (4 ML InAs/10 ML GaSb) the critical point energies are found to depend on the type of interfacial bonding, with an energy shift of up to 50 meV observed between SLs with GaAs- and InSb-like interfaces. Resonant Raman measurements show a pronounced enhancement in scattering efficiency for the superlattice phonons and, in particular, for the interface modes for incident photon energies matching the critical point energies of the SL. © 1994 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
19Articles: DFG German National LicensesWagner, J. ; Alvarez, A.-L. ; Schmitz, J. ; Ralston, J. D. ; Koidl, P.
Woodbury, NY : American Institute of Physics (AIP)
Published 1993Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: Electric-field-induced Raman scattering by longitudinal optical (LO) phonons has been used to study the surface Fermi level position in InSb layers grown by molecular beam epitaxy on (100) GaAs. From the analysis of a variety of layers it is found that the LO phonon scattering intensity, relative to that of intrinsic two-LO phonon scattering, decreases with increasing optical power density in n-type samples, but remains constant in p-type and undoped layers, which are residual p type. The power dependence of the relative LO phonon intensity for n-type doping is shown to be caused by a surface electric field, the strength of which is reduced upon increasing illumination due to screening by photogenerated carriers. As this effect is only found in n-type layers, we conclude that the surface Fermi level is pinned at the valence band thus giving rise to a sizeable surface electric field in n-type but not in p-type material.Type of Medium: Electronic ResourceURL: -
20Articles: DFG German National LicensesWagner, J. ; Schmitz, J. ; Obloh, H. ; Koidl, P.
Woodbury, NY : American Institute of Physics (AIP)
Published 1995Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: InAs/AlSb/GaSb/AlSb/InAs interband-tunneling structures have been analyzed with respect to the composition and structural quality of the AlSb tunneling barriers. The addition of AlAs monolayers at the interfaces between the AlSb barriers and the InAs and GaSb layers was found to result in the expected reduction in the valley current density of the resonant interband-tunneling diode. Vibrational mode Raman spectroscopy showed that the introduction of AlAs monolayers led to the formation of pseudoternary Al(SbAs) barriers, which cause the observed reduction of the valley current density. Ellipsometric measurements indicate that the structural quality of both types of barrier layers, with and without AlAs monolayers added to the interfaces, is inferior to that of thick bulklike AlSb layers. The observation of Raman scattering from a coupled hole plasmon-phonon mode indicates the formation of a hole gas in the GaSb quantum well at the center of the tunneling structure. © 1995 American Institute of Physics.Type of Medium: Electronic ResourceURL: