Search Results - (Author, Cooperation:J. Ruan)
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1Liu, T., Wen, L., Yuan, H., Wang, Y., Yao, L., Xu, Y., Cen, J., Ruan, C., Wu, D., Chen, S.
American Society of Hematology (ASH)
Published 2018Staff ViewPublication Date: 2018-04-20Publisher: American Society of Hematology (ASH)Print ISSN: 0006-4971Electronic ISSN: 1528-0020Topics: BiologyMedicineKeywords: Myeloid NeoplasiaPublished by: -
2Zhang, Q., Yu, B., Chen, X., Varma, D. S., Li, J., Zhao, J., Ruan, Y., Han, X., Min, X., Liu, Z.
BMJ Publishing
Published 2018Staff ViewPublication Date: 2018-06-02Publisher: BMJ PublishingElectronic ISSN: 2044-6055Topics: MedicineKeywords: Open access, Smoking and tobaccoPublished by: -
3A. H. Lumpkin, R. Thurman-Keup, D. Edstrom, J. Ruan, N. Eddy, P. Prieto, O. Napoly, B. E. Carlsten, and K. Bishofberger
American Physical Society (APS)
Published 2018Staff ViewPublication Date: 2018-06-05Publisher: American Physical Society (APS)Electronic ISSN: 1098-4402Topics: PhysicsKeywords: Relativistic, Multiple-Particle DynamicsPublished by: -
4Staff View
Publication Date: 2018-02-08Publisher: Institute of Physics (IOP)Print ISSN: 1757-8981Electronic ISSN: 1757-899XTopics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision MechanicsPublished by: -
5D Broemmelsiek, B Chase, D Edstrom, E Harms, J Leibfritz, S Nagaitsev, Y Pischalnikov, A Romanov, J Ruan, W Schappert, V Shiltsev, R Thurman-Keup and A Valishev
Institute of Physics (IOP)
Published 2018Staff ViewPublication Date: 2018-11-16Publisher: Institute of Physics (IOP)Electronic ISSN: 1367-2630Topics: PhysicsPublished by: -
6I. Zanoni ; Y. Tan ; M. Di Gioia ; A. Broggi ; J. Ruan ; J. Shi ; C. A. Donado ; F. Shao ; H. Wu ; J. R. Springstead ; J. C. Kagan
American Association for the Advancement of Science (AAAS)
Published 2016Staff ViewPublication Date: 2016-04-23Publisher: American Association for the Advancement of Science (AAAS)Print ISSN: 0036-8075Electronic ISSN: 1095-9203Topics: BiologyChemistry and PharmacologyComputer ScienceMedicineNatural Sciences in GeneralPhysicsPublished by: -
7L. Zhang ; S. Chen ; J. Ruan ; J. Wu ; A. B. Tong ; Q. Yin ; Y. Li ; L. David ; A. Lu ; W. L. Wang ; C. Marks ; Q. Ouyang ; X. Zhang ; Y. Mao ; H. Wu
American Association for the Advancement of Science (AAAS)
Published 2015Staff ViewPublication Date: 2015-10-10Publisher: American Association for the Advancement of Science (AAAS)Print ISSN: 0036-8075Electronic ISSN: 1095-9203Topics: BiologyChemistry and PharmacologyComputer ScienceMedicineNatural Sciences in GeneralPhysicsPublished by: -
8Kelly, K. R., Friedberg, J. W., Park, S. I., McDonagh, K., Hayslip, J., Persky, D., Ruan, J., Puvvada, S., Rosen, P., Iyer, S. P., Stefanovic, A., Bernstein, S. H., Weitman, S., Karnad, A., Monohan, G., Vander; Walde, A., Mena, R., Schmelz, M., Spier, C., Groshen, S., Venkatakrishnan, K., Zhou, X., Sheldon-Waniga, E., Leonard, E. J., Mahadevan, D.
The American Association for Cancer Research (AACR)
Published 2018Staff ViewPublication Date: 2018-12-15Publisher: The American Association for Cancer Research (AACR)Print ISSN: 1078-0432Electronic ISSN: 1557-3265Topics: MedicinePublished by: -
9Ruan, J., Martin, P., Christos, P., Cerchietti, L., Tam, W., Shah, B., Schuster, S. J., Rodriguez, A., Hyman, D., Calvo-Vidal, M. N., Smith, S. M., Svoboda, J., Furman, R. R., Coleman, M., Leonard, J. P.
American Society of Hematology (ASH)
Published 2018Staff ViewPublication Date: 2018-11-09Publisher: American Society of Hematology (ASH)Print ISSN: 0006-4971Electronic ISSN: 1528-0020Topics: BiologyMedicineKeywords: Lymphoid Neoplasia, Clinical Trials and ObservationsPublished by: -
10Ruan, J. ; Choyke, W. J. ; Partlow, William D.
[S.l.] : American Institute of Physics (AIP)
Published 1991Staff ViewISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: We have measured the cathodoluminescence spectra of microwave plasma-assisted chemical-vapor deposited (CVD) polycrystalline diamond films at 77 K over the spectral range of 2300–8000 A(ring). Annealing studies of these spectra have been carried out at 500, 800, 1000, 1200, and 1350 °C. Rich spectra are observed. Many of them are stable up to the highest annealing temperature. Two peaks at 3.188 and 2.638 eV and the 5RL lines are destroyed, while other lines at 3.57 and 3.462 eV appear, after a 1200 °C anneal. The two neighboring peaks at 2.330 and 2.320 eV are probably responsible for the broadness of the often observed peak at 2.328 eV in CVD diamond films. We also compare some of the annealing behavior of the CVD diamond films with those of natural single-crystal diamond, and conclude that while most of the annealing characteristics of plasma-deposited diamond films are similar with those which have been reported for single-crystal natural diamonds, some of the annealing behaviors are different for these two types of materials.Type of Medium: Electronic ResourceURL: -
11Ruan, J. ; Choyke, W. J. ; Partlow, W. D.
Woodbury, NY : American Institute of Physics (AIP)
Published 1991Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: Cathodoluminescence (CL) and annealing studies of microwave plasma-assisted chemical vapor deposited (CVD) diamond films were carried out. The annealing behavior of the 1.681 eV (737.4 nm) line in the CL spectra of CVD diamond films grown on Si substrates is compared with that of the GR1 spectral line (1.673 eV) of natural diamond. We determine that these two lines have different origins. The comparison of CL spectra of diamond films grown on different substrates shows that the 1.681 eV peak is due to Si impurity in CVD diamond films.Type of Medium: Electronic ResourceURL: -
12Ruan, J. ; Choyke, W. J. ; Kobashi, K.
Woodbury, NY : American Institute of Physics (AIP)
Published 1993Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: Diamond films are grown using microwave-plasma-enhanced chemical vapor deposition (CVD). Some samples are deposited using 0.1% oxygen in the reaction gas mixture. We have measured the cathodoluminescence spectra of these diamond films (at 77 K) and found that there is a significant difference between the samples grown with oxygen and those without oxygen. Some of the impurity-related luminescence peaks are reduced in intensity or disappear when 0.1% oxygen is used. On the other hand, there are new spectral features in the films grown with oxygen. We attribute some of these new features to oxygen-related centers in diamond and conclude that oxygen could incorporate into the diamond lattice during the CVD process.Type of Medium: Electronic ResourceURL: -
13Ruan, J. ; Kobashi, Koji ; Choyke, W. J.
Woodbury, NY : American Institute of Physics (AIP)
Published 1992Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: Cathodoluminescence spectra of undoped and boron-doped diamond films are reported and are compared with each other. The dominant spectra feature of these samples is the broad luminescence bands centered around 2.83 and 2.32 eV in undoped and relatively heavily doped samples, respectively. Our result indicates that the commonly observed 2.83 eV band (often called by the name "band-A'') is neither related to boron nor to donor-acceptor pairs in diamond. From all of the available data, we conclude that the 2.32 eV band is due to boron related centers and the 2.83 eV band is due to dislocations in diamond.Type of Medium: Electronic ResourceURL: -
14Ruan, J. ; Kobashi, K. ; Choyke, W. J.
Woodbury, NY : American Institute of Physics (AIP)
Published 1992Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: Diamond films were grown using microwave-plasma enhanced chemical vapor deposition. Boron doping in these films were achieved by using 0–1 ppm diborane (B2H6) in the reaction gas mixture during the deposition process. Some samples were deposited using 0.1% oxygen in the reaction gas mixture. We have employed cathodoluminescence to analyze the deposited diamond films and found that the boron concentration in diamond films is significantly reduced when oxygen was used in the deposition. For example, our result indicates that the boron concentration in films doped with 1.0 ppm B2H6 with the addition of 0.1% oxygen is close to that of films doped with 0.01 ppm B2H6 without using oxygen. Therefore, the probability of boron incorporation in diamond films is reduced by a factor of roughly 100 when 0.1% oxygen is used compared with the case where no oxygen is used.Type of Medium: Electronic ResourceURL: -
15Staff View
ISSN: 0920-3796Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002Topics: Energy, Environment Protection, Nuclear Power EngineeringPhysicsType of Medium: Electronic ResourceURL: -
16Yoshizawa, Y. ; Iwata, Y. ; Kaku, T. ; Katoh, T. ; Ruan, J.-Z. ; Kojima, T. ; Kawada, Y.
Amsterdam : ElsevierStaff ViewISSN: 0029-554XSource: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002Topics: Energy, Environment Protection, Nuclear Power EngineeringPhysicsType of Medium: Electronic ResourceURL: -
17Shibata, M. ; Asai, M. ; Ikuta, T. ; Yamamoto, H. ; Ruan, J. ; Okano, K. ; Aoki, K. ; Kawade, K.
Amsterdam : ElsevierStaff ViewISSN: 0969-8043Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002Topics: Energy, Environment Protection, Nuclear Power EngineeringType of Medium: Electronic ResourceURL: -
18Ruan, J.-H. ; Niu, S.-W. ; Cheng, Z.-X. ; Cheng, Y.-F. ; Zeng, X.-X. ; Gou, C. ; Wang, J. ; Guo, L.-P. ; Lin, J. ; Zhang, P.-L. ; An-Sun, Y. ; Chai, Z. ; Shen, Z.-G.
Amsterdam : ElsevierStaff ViewISSN: 0375-9601Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002Topics: PhysicsType of Medium: Electronic ResourceURL: -
19Staff View
ISSN: 0257-8972Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision MechanicsPhysicsType of Medium: Electronic ResourceURL: -
20Staff View
ISSN: 0167-5087Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002Topics: Energy, Environment Protection, Nuclear Power EngineeringPhysicsType of Medium: Electronic ResourceURL: