Search Results - (Author, Cooperation:J. M. Olson)

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  1. 1
    P. A. Northcott ; D. J. Shih ; J. Peacock ; L. Garzia ; A. S. Morrissy ; T. Zichner ; A. M. Stutz ; A. Korshunov ; J. Reimand ; S. E. Schumacher ; R. Beroukhim ; D. W. Ellison ; C. R. Marshall ; A. C. Lionel ; S. Mack ; A. Dubuc ; Y. Yao ; V. Ramaswamy ; B. Luu ; A. Rolider ; F. M. Cavalli ; X. Wang ; M. Remke ; X. Wu ; R. Y. Chiu ; A. Chu ; E. Chuah ; R. D. Corbett ; G. R. Hoad ; S. D. Jackman ; Y. Li ; A. Lo ; K. L. Mungall ; K. M. Nip ; J. Q. Qian ; A. G. Raymond ; N. T. Thiessen ; R. J. Varhol ; I. Birol ; R. A. Moore ; A. J. Mungall ; R. Holt ; D. Kawauchi ; M. F. Roussel ; M. Kool ; D. T. Jones ; H. Witt ; L. A. Fernandez ; A. M. Kenney ; R. J. Wechsler-Reya ; P. Dirks ; T. Aviv ; W. A. Grajkowska ; M. Perek-Polnik ; C. C. Haberler ; O. Delattre ; S. S. Reynaud ; F. F. Doz ; S. S. Pernet-Fattet ; B. K. Cho ; S. K. Kim ; K. C. Wang ; W. Scheurlen ; C. G. Eberhart ; M. Fevre-Montange ; A. Jouvet ; I. F. Pollack ; X. Fan ; K. M. Muraszko ; G. Y. Gillespie ; C. Di Rocco ; L. Massimi ; E. M. Michiels ; N. K. Kloosterhof ; P. J. French ; J. M. Kros ; J. M. Olson ; R. G. Ellenbogen ; K. Zitterbart ; L. Kren ; R. C. Thompson ; M. K. Cooper ; B. Lach ; R. E. McLendon ; D. D. Bigner ; A. Fontebasso ; S. Albrecht ; N. Jabado ; J. C. Lindsey ; S. Bailey ; N. Gupta ; W. A. Weiss ; L. Bognar ; A. Klekner ; T. E. Van Meter ; T. Kumabe ; T. Tominaga ; S. K. Elbabaa ; J. R. Leonard ; J. B. Rubin ; L. M. Liau ; E. G. Van Meir ; M. Fouladi ; H. Nakamura ; G. Cinalli ; M. Garami ; P. Hauser ; A. G. Saad ; A. Iolascon ; S. Jung ; C. G. Carlotti ; R. Vibhakar ; Y. S. Ra ; S. Robinson ; M. Zollo ; C. C. Faria ; J. A. Chan ; M. L. Levy ; P. H. Sorensen ; M. Meyerson ; S. L. Pomeroy ; Y. J. Cho ; G. D. Bader ; U. Tabori ; C. E. Hawkins ; E. Bouffet ; S. W. Scherer ; J. T. Rutka ; D. Malkin ; S. C. Clifford ; S. J. Jones ; J. O. Korbel ; S. M. Pfister ; M. A. Marra ; M. D. Taylor
    Nature Publishing Group (NPG)
    Published 2012
    Staff View
    Publication Date:
    2012-07-27
    Publisher:
    Nature Publishing Group (NPG)
    Print ISSN:
    0028-0836
    Electronic ISSN:
    1476-4687
    Topics:
    Biology
    Chemistry and Pharmacology
    Medicine
    Natural Sciences in General
    Physics
    Keywords:
    Carrier Proteins/genetics ; Cerebellar Neoplasms/*classification/*genetics/metabolism ; Child ; DNA Copy Number Variations/genetics ; Gene Duplication/genetics ; Genes, myc/genetics ; Genome, Human/*genetics ; Genomic Structural Variation/*genetics ; Genomics ; Hedgehog Proteins/metabolism ; Humans ; Medulloblastoma/*classification/*genetics/metabolism ; NF-kappa B/metabolism ; Nerve Tissue Proteins/genetics ; Oncogene Proteins, Fusion/genetics ; Proteins/genetics ; RNA, Long Noncoding ; Signal Transduction ; Transforming Growth Factor beta/metabolism ; Translocation, Genetic/genetics
    Published by:
    http://www.nature.com/

    Latest Papers from Table of Contents or Articles in Press
  2. 2
    DeLong, M. C. ; Ohlsen, W. D. ; Viohl, I. ; Taylor, P. C. ; Olson, J. M.

    [S.l.] : American Institute of Physics (AIP)
    Published 1991
    Staff View
    ISSN:
    1089-7550
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    In previous work we have identified a near-gap photoluminescence in Ga0.52In0.48P which exhibits a strong dependence of emission energy on excitation intensity ("moving emission'') and correlated its presence and strength to conditions of growth. In this work we extend our investigations to the rise and decay lifetimes associated with the moving and nonmoving components of the emission. The two processes proceed simultaneously at the same energy. For the moving emission, the time constants scale approximately linearly with excitation intensity. Decaying luminescence can, in most cases, be well fitted with one or two exponentials with time constants as long as milliseconds. The rising luminescence is typically slower and in some cases has a nonmonotonic first time derivative. These results are discussed in terms of existing models of the microstructure of ordered Ga0.52In0.48P.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.349364

    Articles: DFG German National Licenses
  3. 3
    Kurtz, Sarah R. ; Faine, P. ; Olson, J. M.

    [S.l.] : American Institute of Physics (AIP)
    Published 1990
    Staff View
    ISSN:
    1089-7550
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    Theoretical efficiencies are calculated for two-junction, series-connected solar cells using air mass 1.5 global and direct irradiance spectra. For band-gap combinations previously limited by a low bottom-cell current, thinning of the top cell is shown to result in significant increases in the theoretical efficiencies. The increases are primarily due to increased short-circuit currents, since current matching is achievable. Smaller gains are also seen in the open-circuit voltages of the thinner cells when a low surface-recombination velocity is assumed. Thus, a number of material combinations which previously could only be used in four-terminal configurations can now be considered for series-connected two-junction solar cells.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.347177

    Articles: DFG German National Licenses
  4. 4
    DeLong, M. C. ; Mowbray, D. J. ; Hogg, R. A. ; Skolnick, M. S. ; Hopkinson, M. ; David, J. P. R. ; Taylor, P. C. ; Kurtz, Sarah R. ; Olson, J. M.

    [S.l.] : American Institute of Physics (AIP)
    Published 1993
    Staff View
    ISSN:
    1089-7550
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    Ordering in the CuPt structure is known to significantly reduce the band gap of Ga0.52In0.48P as well as induce a number of unusual details in its optical properties, including long, excitation-intensity-dependent lifetimes and an excitation-intensity-dependent emission energy. We report photoluminescence (PL), photoluminescence excitation (PLE), and resonant Raman measurements performed on ordered and disordered Ga0.52In0.48P. The dominant high energy emission process at low temperature in disordered Ga0.52In0.48P is established to be excitonic, but the exciton trapping energy is not unique. PLE from ordered Ga0.52In0.48P shows significant tailing of electronic states into the band gap and a "band edge'' which depends on detection energy. The dominant radiative process in ordered Ga0.52In0.48P is not excitonic. A large increase in the Stokes shift between the absorption edge (band gap) and PL emission peak occurs when the material orders. Hence, low temperature PL is determined to be a particularly poor measure of band gap. Resonant Raman scattering is used to study optical phonons and their coupling to electronic states. We find that the resonance enhancement at the band edge occurs via localized excitons.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.353792

    Articles: DFG German National Licenses
  5. 5
    Sinha, K. ; Mascarenhas, A. ; Kurtz, Sarah R. ; Olson, J. M.

    [S.l.] : American Institute of Physics (AIP)
    Published 1995
    Staff View
    ISSN:
    1089-7550
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    We present results of Raman scattering from coupled phonon-plasmon modes in Se-doped n-Ga0.52In048P alloy. Due to the small energy separation between the Γ- and the L-point conduction-band minima for this alloy composition, a significant fraction of the free carriers at room temperature are present in the L-conduction-band valley, giving rise to a multicomponent plasma. The carrier concentrations extracted from the Raman spectra for the different epilayers are in good agreement with the free electron concentrations determined by capacitance-voltage measurements. We employ the light scattering technique to extract the carrier concentration in the n-type emitter layer of a GaInP-based solar cell. © 1995 American Institute of Physics.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.360715

    Articles: DFG German National Licenses
  6. 6
    Kurtz, Sarah R. ; Olson, J. M. ; Arent, D. J. ; Bode, M. H. ; Bertness, K. A.

    [S.l.] : American Institute of Physics (AIP)
    Published 1994
    Staff View
    ISSN:
    1089-7550
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    The band gap and microstructure of Ga0.5In0.5P have been shown to vary with deposition conditions. However, growth on (511)B GaAs substrates has been reported to give Ga0.5In0.5P with band gaps close to that of disordered material. It is shown here, that with appropriate selection of the growth parameters, Ga0.5In0.5P can be grown with low band gap and significant ordering on even the (511)B substrates, implying that surface steps play an important role in the ordering process. For the lattice-matched composition, a band gap of 1.83 eV was obtained using low growth temperature (575 °C), low growth rate (0.55 μm/h), and high phosphine pressure (5 Torr).
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.355756

    Articles: DFG German National Licenses
  7. 7
    Zhang, Yong ; Mascarenhas, A. ; Ernst, P. ; Driessen, F. A. J. M. ; Friedman, D. J. ; Bertness, K. A. ; Olson, J. M.

    [S.l.] : American Institute of Physics (AIP)
    Published 1997
    Staff View
    ISSN:
    1089-7550
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    Optical polarization in ordered GaInP2 alloys has been studied by low-temperature photoluminescence. A perturbative theory that includes the effects of lattice mismatch, substrate misorientation, and excitonic transitions has been developed for making quantitative comparisons between experimental results and theoretical predictions. We show that to obtain quantitative information about ordering from the polarization of near-band-gap transitions, all of the above-mentioned effects should be taken into account. This study demonstrates that the electronic and optical properties of a monolayer superlattice formed by partial ordering in the GaInP2 alloy can be well described by a simple perturbative Hamiltonian, i.e., a quasicubic model. © 1997 American Institute of Physics.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.364390

    Articles: DFG German National Licenses
  8. 8
    DeLong, M. C. ; Taylor, P. C. ; Olson, J. M.

    Woodbury, NY : American Institute of Physics (AIP)
    Published 1990
    Staff View
    ISSN:
    1077-3118
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    The excitation intensity dependence of the photoluminescence (PL) from Ga0.52In0.48P grown by organometallic vapor phase epitaxy on GaAs substrates has been investigated as a function of epitaxial layer growth temperature and substrate orientation. It is well known that the degree of ordering and the band-gap energy of this material are functions of growth conditions. We report here on a PL emission which shifts rapidly with excitation intensity. The rate of emission shift is also a function of growth conditions including substrate orientation. There is, however, no significant correlation between the band-gap energy and the rate of emission shift in Ga0.52In0.48P. This PL shift is explained in terms of band filling of potential fluctuations that are associated with a microstructure consisting of ordered domains within a disordered matrix.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.103615

    Articles: DFG German National Licenses
  9. 9
    Leong, J-K. ; Williams, C. C. ; Olson, J. M. ; Froyen, S.

    Woodbury, NY : American Institute of Physics (AIP)
    Published 1996
    Staff View
    ISSN:
    1077-3118
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    Single and two variant ordered GaInP samples are studied in cross section with the scanning capacitance microscope. Our study shows significant differences in the electronic properties of single and two variant GaInP. In unintentionally doped, ordered two variant samples, both n and p-type like domains are observed with the scanning capacitance microscope. In contrast, a spatially uniform capacitance signal is observed in unintentionally doped single variant ordered GaInP. These microscopic capacitance observations can be qualitatively explained by bend bending or internal electric fields. © 1996 American Institute of Physics.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.117825

    Articles: DFG German National Licenses
  10. 10
    Olson, J. M. ; Ahrenkiel, R. K. ; Dunlavy, D. J. ; Keyes, Brian ; Kibbler, A. E.

    Woodbury, NY : American Institute of Physics (AIP)
    Published 1989
    Staff View
    ISSN:
    1077-3118
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    Using time-resolved photoluminescence, we have examined the optoelectronic properties of Ga0.5In0.5P/GaAs/Ga0.5In0.5P double heterostructures grown by organometallic chemical vapor deposition. For comparison, similar structures using Al0.4Ga0.6As/GaAs and Al0.5In0.5P/GaAs lattice-matched heterointerfaces were also examined. For the Ga0.5In0.5P/GaAs heterostructure, we show that the recombination velocity at a Ga0.5In0.5P/GaAs interface can be less than 1.5 cm/s. As a result, photoluminescence decay times as long as 14 μs have been observed in undoped GaAs double heterostructures. This photoluminescence decay time varies with temperature as T1.59, characteristic of radiative recombination not limited by surface or bulk nonradiative recombination processes. For the Al0.4Ga0.6As/GaAs and Al0.5In0.5P/GaAs heterostructures examined in this study, the upper limits of the interface recombination velocity were 210 and 900 cm/s, respectively.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.101656

    Articles: DFG German National Licenses
  11. 11
    Olson, J. M. ; Kurtz, S. R. ; Kibbler, A. E. ; Faine, P.

    Woodbury, NY : American Institute of Physics (AIP)
    Published 1990
    Staff View
    ISSN:
    1077-3118
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    A two-terminal, monolithic cascade solar cell with an efficiency of 27.3% is reported. The device structure consists of a Ga0.5In0.5P homojunction grown epitaxially upon a GaAs homojunction, with a GaAs tunnel diode interconnect. The tandem combination of these two materials is lattice matched, and has a theoretical efficiency of 34%. The device was grown by metalorganic chemical vapor deposition at 700 °C, using trimethylgallium, trimethylindium, arsine, and phosphine as sources. The minority-carrier transport properties of the Ga0.5In0.5P are shown to be relatively insensitive to variations of the growth temperature and phosphine overpressure. Other factors that affect the efficiency of the device are presented and discussed.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.102717

    Articles: DFG German National Licenses
  12. 12
    Cheong, Hyeonsik M. ; Mascarenhas, A. ; Ahrenkiel, S. P. ; Jones, K. M. ; Geisz, J. F. ; Olson, J. M.

    [S.l.] : American Institute of Physics (AIP)
    Published 1998
    Staff View
    ISSN:
    1089-7550
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    We compare the results of low-temperature (4.2 K) microphotoluminescence (PL) measurements on cleaved edges of spontaneously ordered GaInP2 alloy samples with the results of cross-section transmission electron microscopy (TEM). The TEM dark-field images show that the size of ordered domains grows as the deposition progresses. The excitonic luminescence peak in the micro-PL spectra of GaInP2 is stronger near the surface of the thin film than near the substrate. From these results, we conclude that there is a direct correlation between the domain size or alternatively, the density of domain boundaries, and the relative strength of the excitonic peak. © 1998 American Institute of Physics.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.367371

    Articles: DFG German National Licenses
  13. 13
    Kurtz, Sarah R. ; Olson, J. M. ; Kibbler, A.

    Woodbury, NY : American Institute of Physics (AIP)
    Published 1990
    Staff View
    ISSN:
    1077-3118
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    The band gap of Ga0.5In0.5P is reported as a function of growth rate and growth temperature. The Ga0.5In0.5P is grown lattice matched to 2°-off (100) GaAs substrates by atmospheric pressure organometallic chemical vapor deposition using an inlet group V/III ratio of 65. The variation of the band gap is surprisingly complex, taking five different functional forms within the two-dimensional parameter space. These include regions in which the band gap (1) increases with growth rate, (2) decreases with growth rate, (3) is independent of both growth rate and temperature, (4) is independent of growth rate, but dependent on growth temperature, and (5) is not measurable since three-dimensional, instead of two-dimensional, growth is observed. The behavior can only be explained by a theory involving competing processes. One such theory is described.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.104013

    Articles: DFG German National Licenses
  14. 14
    Cheong, Hyeonsik M. ; Zhang, Yong ; Mascarenhas, A. ; Geisz, J. F. ; Olson, J. M.

    [S.l.] : American Institute of Physics (AIP)
    Published 1998
    Staff View
    ISSN:
    1089-7550
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    We report low-temperature polarized-photoluminescence (PL) measurements on (110) cleaved edges of ordered GaInP2 alloys. By comparing the intensity of the forbidden PL polarized along the ordering axis with that of the allowed PL polarized orthogonal to the ordering axis, we study the effect of coulomb interaction on the excitonic transition rate. The experimentally obtained polarization ratios of 13–20 are consistent with calculations based on an eight-band k⋅p model. © 1998 American Institute of Physics.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.366898

    Articles: DFG German National Licenses
  15. 15
    Kurtz, Sarah R. ; Olson, J. M. ; Kibbler, A.

    Woodbury, NY : American Institute of Physics (AIP)
    Published 1989
    Staff View
    ISSN:
    1077-3118
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    The relationship between anomalous changes in the band gap and ordering of the group III sublattice of GaInP2 is discussed. X-ray diffraction data are reported for the first time which show significant long-range order of the CuPt type, i.e., alternating {111} Ga and In planes, in agreement with published electron diffraction data. However, the x-ray and electron diffraction data differ as to which of the four possible orientations are observed and as to the directions of the streaks. No correlation was observed between the long-range order parameter and the band-gap anomalies.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.101470

    Articles: DFG German National Licenses
  16. 16
    Arent, D. J. ; Bode, M. ; Bertness, K. A. ; Kurtz, Sarah R. ; Olson, J. M.

    Woodbury, NY : American Institute of Physics (AIP)
    Published 1993
    Staff View
    ISSN:
    1077-3118
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    We report the first observation of band-gap energy reduction in Ga0.47In0.53As deposited on (100) InP by atmospheric pressure organometallic vapor phase epitaxy due to CuPt-type ordering. A reduction of more than 65 meV in the band-gap energy is observed for lattice-matched samples that show strong CuPt-like ordering by transmission electron microscopy. By comparison samples that show no CuPt-like ordering diffraction signatures, do not have reduced band-gap energies. Studies of the influence of growth parameters on the band-gap energy indicate a U-shaped dependence on the growth temperature with a minimum around 550 °C and decreasing band-gap energies with increasing growth rate (at a constant V/III ratio) over the range 0.5–4 μm/h.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.109640

    Articles: DFG German National Licenses
  17. 17
    DeLong, M. C. ; Mowbray, D. J. ; Hogg, R. A. ; Skolnick, M. S. ; Williams, J. E. ; Meehan, K. ; Kurtz, Sarah R. ; Olson, J. M. ; Schneider, R. P. ; Wu, M. C. ; Hopkinson, M.

    Woodbury, NY : American Institute of Physics (AIP)
    Published 1995
    Staff View
    ISSN:
    1077-3118
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    The phenomenon of ordering in Ga0.52In0.48P is well known to reduce the optical band gap; the amount of band gap reduction is often used to measure the degree of ordering. For such measurements to be meaningful, the band gap of the random ("completely disordered'') binary alloy must be known. Values of this fundamental material parameter appearing in the literature vary by up to 40 meV, while the largest band gap reduction reported to date is only about 120 meV, i.e., within a factor of 3 of the uncertainty in one endpoint. We report here a low temperature band gap of 2.010±0.007 eV for material lattice matched to GaAs as deduced from a broad spectrum of samples believed for different reasons to contain minimal ordering. The corresponding value at 295 K is 1.910±0.008 eV. © 1995 American Institute of Physics.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.113717

    Articles: DFG German National Licenses
  18. 18
    Bertness, K. A. ; Kurtz, Sarah R. ; Friedman, D. J. ; Kibbler, A. E. ; Kramer, C. ; Olson, J. M.

    Woodbury, NY : American Institute of Physics (AIP)
    Published 1994
    Staff View
    ISSN:
    1077-3118
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    We report on multijunction GaInP/GaAs photovoltaic cells with efficiencies of 29.5% at 1-sun concentration and air mass (AM) 1.5 global and 25.7% 1-sun, AM0. These values represent the highest efficiencies achieved by any solar cell under these illumination conditions. Three key areas in this technology are identified and discussed; the grid design, front surface passivation of the top cell, and bottom surface passivation of both cells. Aspects of cell design related to its operation under concentration are also discussed.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.112171

    Articles: DFG German National Licenses
  19. 19
    Friedman, D. J. ; Horner, G. S. ; Kurtz, Sarah R. ; Bertness, K. A. ; Olson, J. M. ; Moreland, J.

    Woodbury, NY : American Institute of Physics (AIP)
    Published 1994
    Staff View
    ISSN:
    1077-3118
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    It has been shown that under certain growth conditions the pseudobinary semiconductor alloy GaInP shows cation site ordering into the Cu-Pt structure, and that this ordering results in a lowering of the band gap Eg from that of the disordered alloy. The Eg lowering is known to depend on growth conditions, including the orientation of the substrate. We study the dependence of Eg on epilayer thickness for GaInP grown by metal-organic vapor-phase epitaxy. For epilayers grown on singular (100) substrates under growth conditions conventionally used to produce ordered material, Eg decreases dramatically with increasing epilayer thickness: Eg for a 10-μm-thick epilayer is ∼40 meV lower than for a 1-μm-thick epilayer. This dependence of Eg on thickness can be understood in terms of the recently observed faceting of the GaInP growth surface.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.112188

    Articles: DFG German National Licenses
  20. 20
    Friedman, D. J. ; Kibbler, A. E. ; Olson, J. M.

    Woodbury, NY : American Institute of Physics (AIP)
    Published 1991
    Staff View
    ISSN:
    1077-3118
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    We present Hall mobility data μ(T) in the range T=300–600 K for GaInP2, an alloy whose band gap has been shown to decrease with increasing compositional ordering. Samples grown to give high ordering are found to have consistently lower mobilities than samples with low ordering, suggesting that the mobility is limited by cluster scattering by ordered domains. We analyze μ(T) in terms of a cluster scattering model developed by Marsh [Appl. Phys. Lett. 41, 732 (1982)] and others to estimate the relative volume fraction of cluster scattering sites in the ordered and disordered material.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.105823

    Articles: DFG German National Licenses