Search Results - (Author, Cooperation:J. Kuang)
-
1Latest Papers from Table of Contents or Articles in PressStaff View
Publication Date: 2018-05-10Publisher: Institute of Physics Publishing (IOP)Electronic ISSN: 1748-0221Topics: PhysicsPublished by: -
2Latest Papers from Table of Contents or Articles in PressHu, Y., Ulrich, B. C., Supplee, J., Kuang, Y., Lizotte, P. H., Feeney, N. B., Guibert, N. M., Awad, M. M., Wong, K.-K., Jänne, P. A., Paweletz, C. P., Oxnard, G. R.
The American Association for Cancer Research (AACR)
Published 2018Staff ViewPublication Date: 2018-09-15Publisher: The American Association for Cancer Research (AACR)Print ISSN: 1078-0432Electronic ISSN: 1557-3265Topics: MedicinePublished by: -
3Latest Papers from Table of Contents or Articles in PressD. I. Schlipalius ; N. Valmas ; A. G. Tuck ; R. Jagadeesan ; L. Ma ; R. Kaur ; A. Goldinger ; C. Anderson ; J. Kuang ; S. Zuryn ; Y. S. Mau ; Q. Cheng ; P. J. Collins ; M. K. Nayak ; H. J. Schirra ; M. A. Hilliard ; P. R. Ebert
American Association for the Advancement of Science (AAAS)
Published 2012Staff ViewPublication Date: 2012-11-10Publisher: American Association for the Advancement of Science (AAAS)Print ISSN: 0036-8075Electronic ISSN: 1095-9203Topics: BiologyChemistry and PharmacologyComputer ScienceMedicineNatural Sciences in GeneralPhysicsKeywords: Animals ; Arsenicals/pharmacology ; Arsenites/pharmacology ; Beetles/drug effects/*enzymology/genetics/metabolism ; Caenorhabditis elegans/drug effects/*enzymology/genetics/metabolism ; Caenorhabditis elegans Proteins/chemistry/genetics/metabolism ; Catalytic Domain ; Dihydrolipoamide Dehydrogenase/chemistry/*genetics/metabolism ; Insect Proteins/chemistry/genetics/metabolism ; Insecticide Resistance/*genetics ; *Insecticides/pharmacology ; Metabolic Networks and Pathways ; Molecular Sequence Data ; Mutation ; Oxidation-Reduction ; Pesticides ; *Phosphines/pharmacology ; Polymorphism, Genetic ; Protein Multimerization ; Tribolium/drug effects/*enzymology/genetics/metabolismPublished by: -
4Latest Papers from Table of Contents or Articles in PressEffects of sodium roasting on the leaching rate of boron-bearing tailings and its mechanism analysisStaff View
Publication Date: 2018-08-09Publisher: Royal SocietyElectronic ISSN: 2054-5703Topics: Natural Sciences in GeneralKeywords: materials sciencePublished by: -
5Latest Papers from Table of Contents or Articles in PressStaff View
Publication Date: 2018-11-06Publisher: Institute of Physics (IOP)Print ISSN: 1755-1307Electronic ISSN: 1755-1315Topics: GeographyGeosciencesPhysicsPublished by: -
6Articles: DFG German National LicensesYang, Fuming ; Kuang, J. P. ; Li, Jingyuan ; Brück, E. ; Nakotte, H. ; de Boer, F. R. ; Wu, Xiucheng ; Li, Zhenxiao ; Wang, Yupeng
[S.l.] : American Institute of Physics (AIP)
Published 1991Staff ViewISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: The temperature dependence of the magnetic susceptibility, the magnetization at 4.2 K in fields up to 35 T, and the specific heat between 1.3 and 40 K in fields up to 5 T of the ternary Ce intermetallic compounds CeCuX (X = Si, Ge, Sn) have been studied. All three compounds form in ordered ternary structures related to the hexagonal AlB2 type. Ferromagnetic order is found below 14.9 K for CeCuSi and below 10.2 K for CeCuGe. The magnetic order of CeCuSn below 8.6 K is of antiferromagnetic type but probably complex, as indicated by a double peak in the specific heat and the occurrence of a very low zero-field moment.Type of Medium: Electronic ResourceURL: -
7Articles: DFG German National LicensesWang, G. W. ; Kaliski, R. ; Kuang, J. B.
Woodbury, NY : American Institute of Physics (AIP)
Published 1990Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: In0.18Ga0.82As epitaxial layers having a thickness much greater than the established critical thickness of pseudomorphic layers have been grown on GaAs substrates. 0.25 μm gate metal-semiconductor field-effect transistors (MESFETs) are fabricated by silicon ion implantation into the epitaxial wafers. In spite of the large lattice mismatch and the high defect density, the devices show excellent device performance with a maximum extrinsic transconductance of 620 mS/mm and a current-gain cutoff frequency fT of 92.8 GHz. Furthermore, the Schottky gate characteristics of this device are shown to be comparable to those of GaAs MESFETs.Type of Medium: Electronic ResourceURL: -
8Articles: DFG German National LicensesKuang, J. B. ; Chen, Y. K. ; Sivco, D. ; Cho, A. Y. ; Eastman, L. F.
Woodbury, NY : American Institute of Physics (AIP)
Published 1990Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: High-current driving capability is realized in submicron-gate lattice-strained In0.59Ga0.41As/In0.52Al0.48As (Δa/a=4×10−3) modulation-doped field-effect transistors. Full-channel drain current in excess of 1.10 and 1.90 A/mm are obtained at 80 K for the singly doped and doubly doped structure, respectively. By using the double modulation technique and a buried p-buffer layer, excellent high-frequency performance and flat transconductance characteristics were realized over a very broad range of gate and drain bias voltages. These devices are very suitable for large-signal or power device operations. The high quality In0.52Al0.48As buffer layer eliminates the hysteresis and current instability (or the kink effect) in submicron-gate devices at both 300 and 80 K.Type of Medium: Electronic ResourceURL: -
9Articles: DFG German National LicensesKuang, J. B. ; Tasker, P. J. ; Chen, Y. K. ; Wang, G. W. ; Eastman, L. F. ; Aina, O. A. ; Hier, H. ; Fathimulla, A.
Woodbury, NY : American Institute of Physics (AIP)
Published 1989Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: We report the dc and microwave performance of i-InAlAs/n+-InGaAs/i-InAlAs heterojunction metal-semiconductor field-effect transistors (MESFETs) with gate lengths from 0.25 to 0.35 μm. At 10 GHz, an extrinsic transconductance (gm) of 507 mS/mm, a current gain cutoff frequency (ft) of 49.5 GHz, and a power gain cutoff frequency (fmax) of 70.5 GHz were observed for a 0.25 μm gate device. For a 0.3 μm gate device, a gm of 545 mS/mm, an ft of 42 GHz, and an fmax of 114 GHz were measured. Output conductance as low as 7.7 mS/mm was measured. The voltage gain for measured devices is well above 20 for a wide range of bias conditions.Type of Medium: Electronic ResourceURL: -
10Articles: DFG German National LicensesKuang, J. B. ; Tasker, P. J. ; Ratanaphanyarat, S. ; Schaff, W. J. ; Eastman, L. F. ; Wang, G. W. ; Chen, Y. K. ; Aina, O. A. ; Hier, H. ; Fathimulla, A.
[S.l.] : American Institute of Physics (AIP)
Published 1989Staff ViewISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: Doped-channel i-In0.52Al0.48As/n+-In0.53Ga0.47 As/i-In0.52Al0.48As heterojunction metal-semiconductor field-effect transistors lattice matched to the InP substrates with gate lengths in the submicron range have been fabricated and characterized. The dc and microwave performance of the devices are presented in this paper. Drain current anomalities, or the kink effects, were observed at room temperatures as well as at 77 K in the dc measurements. The kinks are associated with the deep-level electron trapping, and are not present at microwave frequencies. The dc and microwave bias points for achieving maximum transconductance are different. Normal microwave characteristics are exhibited. A compression of transconductance gm is observed in the dc measurement, while such gm degradation phenomenon does not appear at microwave frequencies. At 10 GHz, an extrinsic gm of 507 mS/mm, a current-gain-cutoff frequency ft of 49.5 GHz, and a power-gain-cutoff frequency (fmax) of 70.5 GHz were observed for a 0.25-μm-gate device. For a 0.3-μm-gate device, a gm of 545 mS/mm, an ft of 42 GHz, and an fmax of 114 GHz were measured. Output conductance as low as 7.7 mS/mm was measured. A voltage gain (gm/gds) as high as 64 was observed. The voltage gain for measured devices is well above 20 for a wide range of bias conditions. Fabricated devices show their potential for high-frequency operations. Further investigation of the origin of traps should result in improved low-frequency device characteristics.Type of Medium: Electronic ResourceURL: -
11Articles: DFG German National LicensesStaff View
ISSN: 1460-2695Source: Blackwell Publishing Journal Backfiles 1879-2005Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision MechanicsType of Medium: Electronic ResourceURL: -
12Articles: DFG German National LicensesStaff View
ISSN: 0012-1606Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002Topics: BiologyType of Medium: Electronic ResourceURL: -
13Articles: DFG German National LicensesStaff View
ISSN: 0014-5793Keywords: (HeLa cell) ; Antibody ; Cell cycle ; Mitosis ; Phosphoprotein ; Threonine phosphorylationSource: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002Topics: BiologyChemistry and PharmacologyPhysicsType of Medium: Electronic ResourceURL: -
14
-
15Articles: DFG German National LicensesStaff View
ISSN: 0378-4363Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002Topics: PhysicsType of Medium: Electronic ResourceURL: -
16Articles: DFG German National LicensesCheng, W. H. ; Yang, Y. D. ; Liang, T. C. ; Wang, G. L. ; Sheen, M. T. ; Kuang, J. H.
Springer
Published 1999Staff ViewISSN: 1572-817XSource: Springer Online Journal Archives 1860-2000Topics: Electrical Engineering, Measurement and Control TechnologyPhysicsNotes: Abstract The effect of Au coating on thermally induced stresses in box-type semiconductor laser packages was investigated by a finite-element method (FEM). The simulated results showed that Invar–Invar joints with Au coating have maximum stresses two times higher than joints without Au coating. This is due to the different coefficients of the thermal expansion (CTE) between dissimilar materials of Invar and Au, resulting in higher stresses. Maximum stresses were also found to be increased as the Au thickness increased. This effect is attributed to the increase in the thermal gradient in the welded region provided by the increased thermal conduction of the thicker Au coating layer. These results suggest that both the difference in CTE between dissimilar materials and higher thermal conduction of Au coating layer have an important impact on thermally induced stresses for optoelectronic packages having laser-welded Au coated materials.Type of Medium: Electronic ResourceURL: -
17Articles: DFG German National LicensesStaff View
ISSN: 1572-817XSource: Springer Online Journal Archives 1860-2000Topics: Electrical Engineering, Measurement and Control TechnologyPhysicsNotes: Abstract A finite-element method (FEM) analysis has been carried out on the thermally-induced stresses generated when stainless steel covers are laser-welded to Au-coated Kovar TO headers during the packaging of semiconductor lasers. In particular, the effect of varying the Au coating thickness of these stresses was investigated. Maximum stresses were found to be reduced as the Au thickness increased. This effect is attributed to the reduction in thermal gradient in the weld region provided by the increased thermal conduction of thicker Au. The result suggests that adequate Au coating thickness is important for ensuring good reliability of opto-electronic packages having laser-welded caps.Type of Medium: Electronic ResourceURL: -
18Articles: DFG German National LicensesStaff View
ISSN: 1572-9125Keywords: 65L20 ; Asymptotic stability ; numerical stability ; one-parameter methods ; systems of neutral differential equationsSource: Springer Online Journal Archives 1860-2000Topics: MathematicsNotes: Abstract This paper deals with the asymptotic stability of theoretical solutions and numerical methods for systems of neutral differential equationsx′=Ax′(t−τ)+Bx(t)+Cx(t−τ), whereA, B, andC are constant complexN ×N matrices, and τ〉0. A necessary and sufficient condition such that the differential equations are asymptotically stable is derived. We also focus on the numerical stability properties of adaptations of one-parameter methods. Further, we investigate carefully the characterization of the stability region.Type of Medium: Electronic ResourceURL: -
19Articles: DFG German National LicensesStaff View
ISSN: 0166-1280Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002Topics: Chemistry and PharmacologyPhysicsType of Medium: Electronic ResourceURL: -
20Articles: DFG German National LicensesStaff View
ISSN: 1573-2673Source: Springer Online Journal Archives 1860-2000Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision MechanicsType of Medium: Electronic ResourceURL: