Search Results - (Author, Cooperation:J. H. Son)

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  1. 1
    J. S. Koh ; E. Yang ; G. P. Jung ; S. P. Jung ; J. H. Son ; S. I. Lee ; P. G. Jablonski ; R. J. Wood ; H. Y. Kim ; K. J. Cho
    American Association for the Advancement of Science (AAAS)
    Published 2015
    Staff View
    Publication Date:
    2015-08-01
    Publisher:
    American Association for the Advancement of Science (AAAS)
    Print ISSN:
    0036-8075
    Electronic ISSN:
    1095-9203
    Topics:
    Biology
    Chemistry and Pharmacology
    Computer Science
    Medicine
    Natural Sciences in General
    Physics
    Keywords:
    Animals ; Biomechanical Phenomena ; Extremities/physiology ; Heteroptera/*physiology ; Hydrodynamics ; *Locomotion ; Robotics ; Rotation ; Surface Tension ; *Water
    Published by:
    http://www.aaas.org/

    Latest Papers from Table of Contents or Articles in Press
  2. 2
    Kim, H. B. ; Kim, T. G. ; Son, J. H. ; Whang, C. N. ; Chae, K. H.

    [S.l.] : American Institute of Physics (AIP)
    Published 2000
    Staff View
    ISSN:
    1089-7550
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    Si ions were implanted into 100-nm-thick SiO2 layer thermally grown on crystalline Si at an energy of 55 keV with various doses ranging from 1×1014 to 1×1017 Si/cm2 at room temperature. Si ions go through the interface between SiO2 layer and Si substrate generating defects in SiO2 layer and Si substrate as well. Defect-related phenomena were characterized by photoluminescence (PL) and electron spin resonance (ESR) measurements. The PL experiment shows that there exists a dose window for a maximum intensity of luminescence related to radiative defects, while the ESR exhibits that nonradiative defects change from E′ centers to Pb centers as the dose increases. It is considered that the intensity is controlled by the density ratio of radiative to nonradiative defects induced by ion implantation. © 2000 American Institute of Physics.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.1305909

    Articles: DFG German National Licenses